DB110A

SIDAC
JH' s SIDAC (Silicon Diode for Alternating Current) represents an unique set of thyristor qualities. The SIDAC is a bidirectional voltage triggereed switch.
Some characteristics of this device include a normal 95 to 330 Volts switching point, negative resistance range, latching characteristics at turn-on and
low on-state voltage drop. One cycle surge current capability up to 30 Amperes makes the SIDAC an ideal product for dumping charged capacitors
through an inductor. Applications include light controls, high pressure sodium lamp starters, power oscillators and high voltage power supplies. At present,
the factory can offer three kinds of package in DO-41,DO-15,SMB.
QUICK REFERENCE TABLE FOR SIDAC
Type number
Case
Page
VBO(Volts)
ITSM(A)(60HZ)
DB105A
95-113
20
DO-41
5-3
DB110A
104-118
20
DO-41
5-3
DB120A
110-125
20
DO-41
5-3
DB130A
120-138
20
DO-41
5-3
DB140A
130-146
20
DO-41
5-3
DB150A
140-170
20
DO-41
5-3
DB200A
190-215
20
DO-41
5-3
DB220A
205-230
20
DO-41
5-3
DB240A
220-250
20
DO-41
5-3
DB250A
240-280
20
DO-41
5-3
DB300A
270-330
DO-41
DB105B
95-113
20
20
DO-15
5-3
5-3
DB110B
104-118
20
DO-15
5-3
DB120B
110-125
20
DO-15
5-3
DB130B
120-138
20
DO-15
5-3
DB140B
130-146
20
DO-15
5-3
DB150B
140-170
20
DO-15
5-3
DB200B
190-215
20
DO-15
5-3
DB220B
205-230
20
DO-15
5-3
DB240B
220-250
20
DO-15
DB250B
240-280
20
DO-15
5-3
5-3
DB300B
270-330
20
DO-15
5-3
DB105S
95-113
20
SMB
5-3
DB110S
104-118
20
SMB
5-3
DB120S
110-125
20
SMB
5-3
DB130S
120-138
20
SMB
5-3
DB140S
130-146
20
SMB
5-3
DB150S
140-170
20
SMB
5-3
DB200S
190-215
20
SMB
5-3
DB220S
205-230
20
SMB
5-3
DB240S
220-250
20
SMB
DB250S
240-280
20
SMB
5-3
5-3
DB300S
270-330
20
SMB
5-3
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SIDAC
R
Bilateral Voltage triggered Switch
Breakover Voltage:95-330Volts
S E M I C O N D U C T O R
DO-41
General Description
JJC' s SIDAC (Silicon Diode for Alternating Current)
represents an unique set of thyristor qualities. The SIDAC
is a bidirectional voltage triggered switch. Upon application
of a voltage exceeding the sidac breakover voltage point,
the sidac switches on through a negative resistance region
to a low on-state voltage. conduction will continue until the
current is interrupted or drops below the minimum holding
current of the device.
At present, JINGHENG can offer three kinds of package in
DO-41,DO-15,SMB.
JINGHENG's sidacs feature glass passivated junctions to ensure
a rugged and dependable device capable of withstanding
harsh environments.
0.034(0.85)
0.028(0.65)
DIA.
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN
0.205(5.20)
0.161(4.10)
1.0(25.4)
MIN
DO-15
0.140(3.6)
0.104(2.6)
DIA
0.036(0.90)
0.028(0.70)
DIA
Features
Bilateral Voltage triggered
AC circuit oriented
1.0(25.4)
MIN
Glass-passivated junctions
0.300(7.60)
0.220(5.60)
1.0(25.4)
MIN
High surge current capabilities
SMB(DO-214AA)
Applications
High voltage lamp ignitors
Xenon ignitors
Natural gas ignitors
Over voltage protector
Gas oil ignitors
High voltage power supply
Pulse generators
Fluorescent lighting ignitors
HID (high intensity discharge) lighting ignitors
0.155(3.94)
0.130(3.30)
0.086(2.2)
0.075(1.91)
0.187(4.76)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.083(2.13)
0.008(0.203)
MAX
0.060(1.52)
0.030(0.76)
0.220(5.59)
0.200(5.08)
Dimensions in inches and (millimeters)
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Electrical Specifications
S E M I C O N D U C T O R
PART NUMBER
IT(RMS)
VDRM
On-state
RMS Current
Tj≦110 C
Repetitive
Peak
Off-state
Voltage
50/60Hz
DO-15
DO-41
DB105A
DB110A
DB110B
DB120A
DB120B
DB130A
DB130B
DB140A
DB140B
DB150A
DB150B
Breakover voltage
50/60Hz sine wave
IBO
Repetitive Peak
Off-state Current
50/60hz Sine Wave
V=VDRM
Breakover
Current
50/60Hz
sine wave
Amps
Amps
Amps
Volts
MAX
MIN
MIN
MAX
DB105S
1.0
±90
95
113
5
10
DB110S
1.0
±90
104
118
5
10
DB120S
1.0
±90
110
125
5
10
DB130S
1.0
±90
120
138
5
10
DB140S
1.0
±90
130
146
5
10
DB150S
1.0
±90
140
170
5
10
±180
190
215
5
10
SMB
DB105B
IDRM
VBO
Volts
MAX
MAX
DB200A
DB200B
DB200S
1.0
DB220A
DB220B
DB220S
1.0
±180
205
230
5
10
DB240A
DB240B
DB240S
1.0
±190
220
250
5
10
DB250A
DB250B
DB250S
1.0
±190
240
280
5
10
DB300A
DB300B
DB300S
1.0
±190
270
330
5
10
IH
VTM
Dynamic
Holding Current
50/60hz
Sine Wave
R=100 OHMS
Peak On-state Voltage
IT=1Amp
Volts
MAX
mAmps
TYP
40
40
40
40
MAX
40
40
40
40
40
100
100
100
100
100
40
40
100
100
100
100
100
100
Peak One Cycle
Surge Current
50/60Hz Sine Wave
(Non-Repetitive)
Amps
Package
60Hz
DO-41
1.5
1.5
1.5
1.5
DO-15
1.5
1.5
1.5
1.5
SMB
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
JINAN JINGHENG ELECTRONICS CO., LTD.
dv/dt
RS
ITSM
50Hz
Switching
Resistance
(VBO-VS)
Rs =
(IS-IBO)
50/60Hz
Sine Wave
KΩ
MIN
0.1
0.1
0.1
0.1
Critical
Rate-of-rise
Of Off-state
Voltage at
Rate VDRM
Tj ≦100 C
Volts/ second
MIN
1500
20
20
20
20
16.7
16.7
16.7
16.7
20
20
20
20
20
16.7
16.7
16.7
16.7
16.7
0.1
1500
1500
0.1
0.1
0.1
0.1
1500
1500
1500
1500
20
20
16.7
16.7
0.1
0.1
1500
1500
5-3
1500
1500
di/dt
Critical
Rate-of-Rise
Of On-State
Current
Amps/ second
TYP
150
150
150
150
150
150
150
150
150
150
150
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Electrical Specifications
S E M I C O N D U C T O R
V-I Characteristics
Thermal Resistance
+I
IT
RS
THERMAL RESISTANCE(STEADY STATE)
R JC (R JA) C/W (TYPICAL)
IH
IS
IBO
IDRM
-V
+V
VT VDRM
RS=
VSVBO
DO-41
AXIAL LEAD
(VBO-VS)
DO-15
AXIAL LEAD
(IS-IBO)
DO-214AA(SMB)
SURFACE MOUNT
14(45)
15(50)
17(75)
-I
FIG.2 Peak surge current vs surge current duration
FIG.1 Normalized DC Holding Current vs case/Lead
Temperature
Ratio of
IH
IH(Tc=25 C)
Peak surge (Non-repetitive)
on-state current (ITSM)-Amps
100
30
20
10
8.0
6.0
4.0
2.0
Case Temperature(TC)
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum
Rated value at Special junction
temperature
40
BLOCKING CAPABILITY MAY BE LOST DURING
AND IMMEDIATELY FOLLOWING SURGE
CURRENT IMTERVAL
OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED TO STEADY-STATE RATED
VALUE
1.0
1.0
C
10
100
Surge Current Duration- Full Cycles
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Electrical Specifications
S E M I C O N D U C T O R
FIG.3 Maximum Allowable Ambient temperature vs on-state
Current
FIG.4 Normalized Repetitive Peak Breakover
Current vs Junction Temperature
CURRENT WAVEFORM: Sinusoidal, 60Hz
LOAD: Resistive or inductive
FREE AIR RATING
100
80
SM
B(D
60
O21
4A
DO
-1 5
A)
DO
-41
40
25
20
0
0.2
0.4
0.6
0.8
9
8
7
6
Repetitive Peak Breakover Current
(IBO) Multiplier
Maximum Allowable Ambient
Temperature (TA)-C
140
120
5
4
V=VBO
3
2
1
1.0
20
RMS on-state current (IT(RMS)-Amps
30
40
50
60
70
80
90
100
110
120
Junction Temperature (TJ)- C
FIG.5 Normalized CBO Changes vs Case
Temperature
FIG.6 Repetitive Peak On-State Current (ITRM) vs
Pulse Width at Various Frequencies
di/dt Limit Line
600
400
+4
Non
200
Repetitive Peak On-State
Current (ITRM)-Amps
Percentage of VBO Changes-%
+2
0
-2
-4
-6
100
80
60
40
f=1
0H
f=1
0
20
f=1
kH
10
8
6
4
z
f=10k
H
-12
-40
0
+20 +25 +40
+60
+80
+100
z
titio
Current
wavetorm
nF
re q
ue
z
nc
yf
=5
H
to
vt
z
z
z
TJ=110 C Max
2X10-3
-20
pe
ITRM
VBO Firing
d
z
f=20k
H
1
0.8
0.6
-10
Re
eate
f=5
kH
2
-8
0H
-Re
p
4
6
8
1X10-2
2
4
6
8
1X10-1
2
4
6
8
1
+120
Pulse base width (to)-mSec.
Junction Temperature(TJ) C
FIG.8 Power Dissipation (Typical) vs On-State Current
FIG.7 On-State Current vs On-State Voltage
2.2
2.0
8
TL=25 C
Average On-State Power Dissipation
(PD(AV))-Watls
Positive or Negative Instantaneous
On-State Current (IT)=Amps
9
7
6
SMB
5
DO-41
4
3
DO-15
2
1
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: See Figure 4
1.8
1.6
1.4
DO-15
1.2
1.0
DO-41
0.8
0.6
SMB
0.4
0
0.6
0.8 1.0 1.2 1.4 1.6 1.8 2.0
2.2 2.4 2.6 2.8
3.0
3.2 3.4 3.6
0.2
Positive or Negative Instantaneous On-State Voltage(VT)-Volts
0
0.2
0.4
0.6
0.8
RMS On-State Current (IT(RMS))-Amps
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Electrical Specifications
S E M I C O N D U C T O R
FIG.10 Typical High Pressure Sodium Lamp Firing
Circuit
FIG.9 Ignitor Circuit (Low Voltage Input)
4.7mF
BALLAST
BALLAST
4.7KW
10mF
0.47mF
400V
SIDAC
- +
50V
0.22mF
SIDAC
SIDAC
+
-
LAMP
3.3KW
4.7mF
100V
1.2mF
7.5KW
LAMP
200V
24VAC
60Hz
120VAC
60Hz
220VAC
50Hz
16mH
H.V.
IGNITOR
120VAC
FIG.11 Comparison of SIDAC vs SCR
220VAC
FIG.12 Xenon Lamp Flashing Circuit
100
-
XENON LAMP
10 F
- +
250V
100-250
VAC
60Hz
100-250
VAC
60Hz
SIDAC
S1
100
1%
+
SIDAC
0.1 F
400V
VBO
VBO
VBO
Ipk
DEVICE
UNDER
TEST
4KV
FIG.14 Basic SIDAC Circuit
SWITCH TO TEST IN EACH
DIRECTIONS
100-250
VAC
60Hz
20M
10 F
250V
-
FIG.13 Dynamic Holding Current Test Circuit for SIDAC
PUSH TO TEST
120VAC
60Hz
IH
TRACE STOPES
100-250
VAC
60Hz
IH
LOAD
VVBO
BO
IH
IH
125-145
CONDUCTION
ANGLE
LOAD CURRENT
SCOPE
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Electrical Specifications
S E M I C O N D U C T O R
FIG.15 Relaxation Oscillator Using a SIDAC
(a) Circuit
(b) Waveforms
VBO
VC
R
SIDAC
t
VC
VDC(IN) VBO
IL
C
IL
RL
t
Rmax
VIN-VBO
IBO
VIN-VTM
IH(MIN)
Rmin
FIG.16 SIDAC Added To Protect Transistor For Typical Transistor Inductive Load Switching Requirements
INPUT
VOLTAGE
0V
VCE MONITOR
TW=3ms
(See Note A)
TW
(See Note B)
INPUT
2N6127
(or equivalent)
5V
100mH
RBB1=150W
TIP-47
50W
VCC=20V
RBB2=100W
COLLECTOR
CURRENT
100mS
0.63A
+
0
-
50W
SIDAC VBO
RS=0.1W
+
VBB1=10V
IC MONITOR
VBB2=0
-
COLLECTOR
VOLTAGE
10V
VCE(sat)
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until ICM=0.63A.
NOTE B: Sidac (or Diac or series of diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown
of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.
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