DB105R

DB105R
R
BILATERAL VOLTAGE TRIGGERED SWITCH
S E M I C O N D U C T O R
FEATURES
R-1
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Bilateral voltage triggered
AC circuit oriented
Glass-passivated junctions
High surge current capabilities
High voltage lamp ignitors
Xenon ignitors
Natural gas ignitors
Over voltage protector
High temperature soldering guaranteed:260 C/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
1.0(25.4)
MIN.
0.102(2.6)
0.091(2.3)
DIA.
MECHANICAL DATA
0.025(0.65)
0.021(0.55)
DIA.
Case: JEDEC R-1 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026
0.140(3.5)
0.116(2.9)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Weight: 0.007 ounce, 0.20 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load, derate by 20%.)
Repetitive Peak Off-state Voltage
Breakover Current 50/60 Hz sine wave
Repetive peak off-state current, 50/60Hz sine wave
Maximum on-state RMS current, Tj≤110℃ 50/60Hz sine
wave
MIN
Breakover voltage 50/60Hz sine wave
MAX
Maximum dynamic holding current
50/60Hz sine wave R=100Ω
Peak one cycle surge current
sine wave (non-repetitive)
Symbols
DB105R
VDRM
IBO
IDRM
±90
IT(RMS)
50Hz
Typical peak on-state voltage(IT=0.6A)
Switching resistance (VBO-VS)/(IS-IBO) 60Hzsine wave
Operating temperature range
Operating junction and storage temperature range
JINAN JINGHENG ELECTRONICS CO., LTD.
10
Volts
μA
μA
0.6
Amp
10
95
VBO
Volts
113
IH
60Hz
Units
ITSM
VTM
100
16.7
20
1.5
0.1
mA
A
Volts
KΩ
Rs
TJ
-40 to +110
℃
TSTG
-55 to +150
℃
5-1
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RATINGS AND CHARACTERISTIC CURVES DB105R
V-I Characteristics
FIG.1 Normalized DC Holding Current vs case/Lead
Temperature
IT
IH
IH(Tc=25 C)
+I
Ratio of
RS
IH
IS
IBO
IDRM
Case Temperature(TC)
-V
C
+V
VT
RS=
VDRM
VS VBO
(VBO-VS)
(IS-IBO)
-I
FIG.2 Peak surge current vs surge current duration
Peak surge (Non-repetitive)
on-state current (ITSM)-Amps
100
SUPPLY FREQUENCY: 60Hz Sineusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum
Rated value at Special junction
temperature
40
30
20
10
8.0
6.0
4.0
2.0
BLOCKING CAPABILITY MAY BE LOST DURING
AND IMMEDIATELY FOLLOWING SURGE
CURRENT IMTERVAL
OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED TO STEADY-STATE RATED
VALUE
1.0
1.0
10
100
1000
Surge Current Duration- Full Cycles
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5-2
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RATINGS AND CHARACTERISTIC CURVES DB105R
FIG.3 Maximum Allowable Ambient temperature vs on-stsae
Current
FIG.4 Normalized Repetitive Peak Breakover
Current vs Junction Temperature
CURRENT WAVEFORM: Sinusoidal, 60Hz
LOAD: Resistive or inductive
FREE AIR RATING
120
100
80
60
40
25
20
0
0.2
0.4
0.6
0.8
9
8
7
6
Repetitive Peak Breakover Current
(IBO) Multiplier
Maximum Allowable Ambient
Temperature (TA)-C
140
5
4
V=VBO
3
2
1
1.0
RMS on-state current (IT(RMS)-Amps
20
30
40
50
60
70
80
90
100
110
120
Junction Temperature (TJ)- C
FIG.5 Normalized CBO Changes vs Case
Temperature
FIG.6 Repetitive Peak On-State Current (ITRM) vs
Pulse Width at Various Frequencies
di/dt Limit Line
600
400
+4
Non
-Re
200
Repetitive Peak On-State
Current (ITRM)-Amps
Percentage of VBO Changes-%
+2
0
-2
-4
-6
100
80
60
40
f=1
f=1
20
f=1
10
8
6
4
-8
-12
-40
+20 +25 +40
+60
+80
+100
ion
Fre
q
ue
z
nc
yf
vt
=5
Hz
kHz
kHz
TJ=110 C Max
4
6
8
1X10-2
2
4
6
8
1X10-1
2
4
6
8
1
+120
Pulse base width (to)-mSec.
Junction Temperature(TJ) C
FIG.8 Power Dissipation (Typical) vs On-State Current
FIG.7 On-State Current vs On-State Voltage
9
2.2
8
2.0
TL=25 C
7
Average On-State Power Dissipation
(PD(AV))-Watls
Positive or Negative Instantaneous
On-State Current (IT)-Amps
00H
to
etit
f=20
2X10-3
0
Re
p
0Hz
kHz
f=10
kHz
1
0.8
0.6
-20
ted
f=5
2
-10
ITRM
VBO Firing
Current
wavetorm
pea
6
5
4
3
2
1
0
0.6
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: See Figure 4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
0.2
Positive or Negative Instantaneous On-State Voltage(VT)-Volts
0
0.2
0.4
0.6
0.8
RMS On-State Current (IT(RMS))-Amps
JINAN JINGHENG ELECTRONICS CO., LTD.
5-3
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1.0
RATINGS AND CHARACTERISTIC CURVES DB105R
FIG.10 Typical High Pressure Sodium Lamp Firing
Circuit
FIG.9 Ignitor Circuit (Low Voltage Input)
4.7mF
BALLAST
BALLAST
4.7mF
10mF
0.47mF
400V
SIDAC
- +
50V
0.22mF
SIDAC
SIDAC
+
-
4.7mF
100V
1.2mF
LAMP
3.3KW
7.5KW
LAMP
200V
24VAC
60Hz
120VAC
60Hz
220VAC
50Hz
16mH
H.V.
IGNITOR
120VAC
FIG.11 Comparison of SIDAC vs SCR
220VAC
FIG.12 Xenon Lamp Flashing Circuit
100
-
XENON LAMP
10 F
- +
250V
100-250
VAC
60Hz
100-250
VAC
60Hz
SIDAC
FIG.13 Dynamic Holding Current Test Circuit for SIDAC
PUSH TO TEST
S1
120VAC
60Hz
100 1%
IH
TRACE STOPES
100-250
VAC
60Hz
IH
SCOPE
JINAN JINGHENG ELECTRONICS CO., LTD.
+
-
5-4
SIDAC
0.1 F
400V
VBO
Ipk
DEVICE
UNDER
TEST
4KV
FIG.14 Basic SIDAC Circuit
SWITCH TO TEST IN EACH
DIRECTIONS
100-250
VAC
60Hz
20M
10 F
250V
VBO
VBO
LOAD
VVBO
BO
IH
IH
125-145
CONDUCTION
ANGLE
LOAD CURRENT
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RATINGS AND CHARACTERISTIC CURVES DB105R
FIG.15 Relaxation Oscillator Using a SIDAC
(a) Circuit
(b) Waveforms
VBO
VC
R
SIDAC
t
VC
VDC(IN) VBO
IL
C
IL
RL
t
Rmax
VIN-VBO
IBO
VIN-VTM
IH(MIN)
Rmin
FIG.16 SIDAC Added To Protect Transistor For Typical Transistor Inductive Load Switching Requirements
INPUT
VOLTAGE
0V
VCE MONITOR
TW=3ms
(See Note A)
TW
(See Note B)
INPUT
2N6127
(or equivalent)
5V
100mH
COLLECTOR
CURRENT
RBB1=150W
TIP-47
0.63A
+
50W
VCC=20V
RBB2=100W
50W
100mS
0
SIDAC VBO
+
VBB1=10V
IC MONITOR
RS=0.1W
VBB2=0
-
COLLECTOR
VOLTAGE
10V
VCE(sat)
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until ICM=0.63A.
NOTE B: Sidac (or Diac or series of diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown
of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.
JINAN JINGHENG ELECTRONICS CO., LTD.
5-5
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