R LLDB3/LLDC34/LLDB4/LLDB6 SILICON BIDIRECTIONAL DIAC S E M I C O N D U C T O R FEATURES The three-layer, two-terminal, axial-lead, hermetically sealed diacs are MiniMELF designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal 0.063(1.6) 0.055(1.4) motor speed control and heat control. JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate in conjunction with Triacs and SCR's 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.126(3.2) High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF glass case(SOD-80) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Value Parameters Symbols Units LLDB3 PC Power Dissipation on Printed Circuit(L=10mm) TA=50 C ITRM Repetitive Peak on-state Current tp=10ms f=100Hz TSTG/TJ LLDB4 LLDC34 LLDB6 mW 150 Storage and Operating Junction Temperature A 1.6 2.0 C -40 to+125 ELECTRICAL CHARACTERISTICS Value Symbols Parameters Units Test Condition LLDB3 VBO │+VBO││-VBO│ │+ V│ Breakover Voltage (Note 2 ) C=22nF(Note 2) See diagram 1 Min Typ Max Breakover Voltage Symmetry C=22nF(Note 2) See diagram 1 Max I=(IBO to IF=10mA) See Diagram 1 Dynamic Breakover Voltage (Note1) 28 32 36 LLDC34 LLDB4 35 40 45 LLDB6 56 60 70 V +3 +4 V Min 5 10 V 30 34 38 VO Output Voltage (Note 1 ) See Diagram 2 Min 5 V IBO Breakover Current (Note1) C=22nF(Note 2) Max 100 mA See Diagram 3 Typ 1.5 ms VB=0.5 VBO max see diagram 1 Max 10 mA tr IB Rise Time (Note1) Leakage Current (Note1) Notes: 1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices. JINAN JINGHENG ELECTRONICS CO., LTD. 3-4 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LLDB3/LLDC34/LLDB4/LLDB6 DIAGRAM 2: Test circuit for output voltage DIAGRAM 1: Current-voltage characteristics +IF 10KW 500KW D.U.T 220V 50Hz 10mA VO R=20W 0.1mF DIAGRAM 3: Test circuit see diagram2 adjust R for IP=0.5A IBO IB 0.5 VBO -V +V IP 90% V VBO 10% -IF tr FIG.2-Relative variation of VBO versus junction temperature(typical values) FIG.1-Power dissipation versus ambient temperature (maximum values) P (mW) 160 1.08 140 VBO(TJ) VBO(TJ=25 C) 120 100 1.06 80 60 1.04 40 Tamb( C) 20 0 1.02 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1.00 25 FIG.3-Peak pulse current versus pulse duration (maximum values) TJ125 ( C) 50 75 100 ITRM(A) 2 f=100Hz TJ initial=25 C 1 0.1 tp(ms) 0.01 10 100 1000 10000 JINAN JINGHENG ELECTRONICS CO., LTD. 3-5 HTTP://WWW.JINGHENGGROUP.COM 125