DAESAN DB3

SIGNAL BIDIRECTIONAL
DIAC
DB3 / DB4
Features
The three layer, two terminal, axial lead,
hermetically sealed diacs are designed
specifically for triggering thyristors.
They demonstrate low breakover current
at breakover voltage as they withstand
peak pulse current. The breakover
symmetry is within three volts.
These diacs are intended for use in
thyristors phase control, circuits for lamp
dimming, universal motor speed control,
and heat control
R-1
DO-35(GLASS)
0.075(1.9)
MAX.
DIA.
0.102(2.6)
0.091(2.3)
DIA.
1.083(27.5)
MIN.
0.154(3.9)
MAX.
1.083(27.5)
MIN.
0.020(0.52)
MAX.
DIA.
DEC's DB3/DB4 are bi-directional trigged
diode designed to operate in conjunction
with Triacs and SCR's
0.787(20.0)
MIN.
0.126(3.2)
0.106(2.7)
0.025(0.65)
0.021(0.55)
DIA.
0.787(20.0)
MIN.
Dimensions in inches and (millimeters)
Absolute Ratings (Limiting Values)
Pc
ITRM
TSTG/TJ
Value
Parameters
Symbols
DB4
DB3
Power Dissipation on Printed
Circuit(L=10mm)
TA=50℃
Repetitive Peak on-state
Current
tp=10μs
F=100Hz
150
2.0
Storage and Operating Junction Temperature
Units
mW
2.0
-40 to +125/-40 to 110
A
℃
Electrical characteristics
Symbols
VBO
|+VBO|| - VBO|
Parameters
Value
Test Conditions
DB3
DB4
Units
28
32
36
35
40
45
V
Breakover Voltage (Note 2)
C=22nF(Note2)
See diagram 1
Min
Typ
Max
Breakover Voltage Symmetry
C=22nF(Note2)
See diagram 1
Max
±3
V
△I=(IBO to IF=10mA)
See diagram 1
Min
5
V
|±△V|
Dynamic Breakover Voltage (Note 1)
VO
IBO
tr
Output Voltage (Note 1)
See diagram 2
Min
5
V
Breakover Current (Note 1)
C=22nF(Note2)
Max
100
μA
See diagram 3
Typ
1.5
μS
VB=0.5 VBO max
see diagram 1
Max
10
μA
IB
Rise Time (Note 1)
Leakage Current (Note 1)
Notes:
(1) Electrical characteristics applicable in both forward and reverse directions
(2) Connected in parallel with the devices
RATINGS AND CHARACTERISTIC CURVES DB3/DB4
DIAGRAM 1 : Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
+IF
10mA
500KW
10KW
220V
50Hz
D.U.T
R=20W
Vo
0.1mF
DIAGRAM 3 : Test circuit see diagram2 adjust R for
Ip=0.5A
IBO
IB
-V
0.5 VBO
+V
Ip
90%
△V
VBO
10%
-IF
tr
FIG.2-Relative variation of VBO versus junction
temperature (typical values)
FIG.1-Power dissipation versus ambient
temperature (maximum values)
P (mW)
VBO(TJ)
VBO(TJ=25℃)
160
1.08
140
120
100
1.06
80
60
1.04
40
Tamb( ℃)
20
0
0
10 20
30 40
50
60
70 80
90 100 110 120 130
1.02
TJ (℃)
FIG.3-Peak pulse current versus pulse duration
(maximum values)
ITRM(A)
2
F=100Hz
TJ initial=25℃
1
0.1
tp(mS)
0.01
10
100
1000
10000
1.00
25
50
75
100
125