SY DB3M

DB3M.DB4M
SILICON BIDIRECTIONAL DIACS
VOLTAGE RANGE: 28-45 V
FEATURES
MINI-MELF
Cathode indification
φ1 .5±0.1
The three layer,two termnal,hermetically sealed diacs
are designed specifically for triggering thyristors.
They demonstrate low break over current at break
over voltage as they withstand peak pulse current,
The breakover symmetry is within three volts(DB6).
These diacs are intended for use in thyrisitors
phase control,circuits for lamp dimming,universal
motor speed control,and heat control.
0.4±0.1
3.4 +0.3
-0.1
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Symbols
DB3M,DB4M
UNITS
Pc
150.0
mW
ITRM
2.0
A
TJ
-40--- +125
o
TSTG
-40--- +125
o
Power dissipation on printed
TA=50oC
Repetitive peak on-state
current
tp=20 S
f=120Hz
Operating junction temperature
Storage temperature
C
C
ELECTRICAL CHARACTERISTICS
Parameters
Breakover voltage (NOTE 1)
Breakover voltage symmetry
Dynamic breakover voltage (NOTE 1)
Test Conditions
VBO
I+VBO II-VBOI
I±
VI
C=22nf(NOTE 2)
See FIG.1
DB3M
DB4M
Min
28
35
Typ
32
40
Max
36
45
UNITS
V
C=22nf(NOTE 2)
See FIG.1
Max
±3.0
V
I=(IBO to IF=10mA)
See FIG.1
Min
5.0
V
V
Output voltage (NOTE 1)
Vo
See FIG.2
Min
5.0
Breakover current (NOTE 1)
IBO
C=22nf(NOTE 2)
Max
100.0
Rise time (NOTE 1)
tr
See FIG.3
Typ
1.5
S
Leakage current (NOTE 1)
IR
V R=0.5 V BO
See FIG.1
Max
10.0
A
NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.
2. Connected in parallel w ith the devices
A
RATINGS AND CHARACTERISTIC CURVES
DB3M.DB4M
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
+IF
10mA
10KΩ 500KΩ D.U.T
I BO
IB
-V
220V
60Hz
+V
0.5VBO
Vo
0.1µ F
R=20Ω
V
VBO
-IF
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A
FIG.4--POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
P(mW)
160
140
90%
120
IP
100
80
60
40
10%
20
tr
0
FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
1.08
Tamb( ℃ )
0
10
20 30
40 50
60
70
80
90
100 110 120 130
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
PULSE DURATION(MAXIMUM VALUES)
ITRM(A)
VBO(TJ)
VBO(TJ=25 )
2
1
1.06
TJ(
f=100Hz
TJ initial=25℃
)
1.04
0.1
tp(µ s)
1.02
1.00
25
50
75
100
125
0.01
10
100
1000
10000