RENESAS HAT1041T

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
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third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
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information contained herein.
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or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
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8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HAT1041T
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-1238F (Z)
7th. Edition
Jan. 2001
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
TSSOP-8
87
65
12
34
1 5 8
D D D
4
G
S S S S
2 3 6 7
1, 5, 8
Drain
2, 3, 6, 7 Source
4
Gate
HAT1041T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
-20
V
Gate to source voltage
VGSS
±12
V
Drain current
ID
-6.0
A
-48
A
-6.0
A
1.3
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
-20
—
—
V
I D = -10mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±12V, VDS = 0
Zero gate voltege drain current I DSS
—
—
1
µA
VDS = -20 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
-0.4
—
-1.4
V
VDS = -10V, I D = -1mA
Static drain to source on state
RDS(on)
—
0.020
0.026
Ω
I D =- 3A, VGS =- 4.5V Note3
resistance
RDS(on)
—
0.035
0.045
Ω
I D = -3A, VGS = -2.5V Note3
Forward transfer admittance
|yfs|
6.5
11
—
S
I D = -3A, VDS = -10V Note3
Input capacitance
Ciss
—
1850
—
pF
VDS = -10V
Output capacitance
Coss
—
590
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
380
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
30
—
ns
VGS =- 4V, ID = -3A
Rise time
tr
—
145
—
ns
VDD ≅ -10V
Turn-off delay time
t d(off)
—
210
—
ns
Fall time
tf
—
170
—
ns
Body–drain diode forward
voltage
VDF
—
-0.85
-1.10
V
IF =-6.0A, VGS = 0 Note3
Body–drain diode reverse
recovery time
t rr
—
70
—
ns
IF = -6.0A, VGS = 0
diF/ dt =20A/µs
Note:
2
3. Pulse test
HAT1041T
Main Characteristics
Typical Output Characteristics
-20
Pulse Test
(A)
-10 V
-4 V
-16
Drain Current
ID
-3 V
-12
-8
VGS = -1.5 V
-4
0
-2
-4
-6
Drain to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
0.05
-2.5 V
0.02
VGS = -4.5 V
0.01
0.005
0.002
-0.2
-0.5 -1
-2
Drain Current
-5
-10
I D (A)
-20
V DS = -10 V
Pulse Test
-16
-12
-8
Tc = -25°C
-4
0
-10
-8
V DS (V)
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Drain Current
I D (A)
-2V
Drain to Source On State Resistance
R DS(on) ( Ω )
Typical Transfer Characteristics
-20
25°C
75°C
-1
-2
-3
Gate to Source Voltage
-4
-5
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.1
Pulse Test
0.08
0.06
0.04
I D = -5 A
-2.5 V
-5 A
0.02
V GS = -4.5 V
0
-40
-2 A, -1 A
-2 A, -1 A
0
40
80
120
160
Case Temperature Tc (°C)
3
HAT1041T
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.2
0.1
0.05
0.01
θ ch - f(t) = γs (t) • θ ch - f
θ ch - f = 139 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
PDM
e
0.001
t
ho
1s
ls
pu
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
Pulse Width PW (s)
4
10
100
1000
10000
HAT1041T
Package Dimensions
As of January, 2001
Unit: mm
4.40
3.00
3.30 Max
8
5
1
4
0.65
0.20 ± 0.06
1.0
0.13 M
6.40 ± 0.20
0.10
*Dimension including the plating thickness
Base material dimension
*0.17 ± 0.05
0.15 ± 0.04
1.10 Max
0.805 Max
0.07 +0.03
–0.04
*0.22 +0.08
–0.07
0° – 8° 0.50 ± 0.10
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TTP-8D
—
—
—
5
HAT1041T
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
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Japan
:
:
:
:
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http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
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(America) Inc.
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San Jose,CA 95134
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Fax: <1>(408) 433-0223
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Germany
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URL : http://www.hitachi.com.sg
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Berkshire SL6 8YA, United Kingdom
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
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Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
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Telex : 23222 HAS-TP
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Group III (Electronic Components)
7/F., North Tower,
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Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
6