HA17458 Series Dual Operational Amplifier REJ03D0680-0100 (Previous: ADE-204-040) Rev.1.00 Jun 15, 2005 Description HA17458 is dual operational amplifiers which provides internal phase compensation and high performance. It can be applied widely to measuring control equipment and to general use. Features • • • • High voltage gain: 100dB (Typ) Wide output amplitude: ±13V (Typ) [at RL ≥ 2kΩ] Protected from output shortcircuit Internal phase compensation Ordering Information Type No. Application Package Code (Previous Code) HA17485FP HA17458F Industrial use Commercial use PRSP0008DE-B (FP-8DGV) PRSP0008DE-B (FP-8DGV) HA17458 HA17458PS Commercial use Industrial use PRDP0008AF-A (DP-8B) PRDP0008AF-A (DP-8B) Rev.1.00 Jun 15, 2005 page 1 of 8 HA17458 Series Pin Arrangement Vout1 1 8 VCC 7 Vout2 Vin(−)1 2 Vin(+)1 3 1 − + 2 + − 6 Vin(−)2 5 Vin(+)2 VEE 4 (Top View) Circuit Schematic (1/2) VCC Vin(+) Vin(−) Vout to VEE to VCC to VCC VEE Rev.1.00 Jun 15, 2005 page 2 of 8 HA17458 Series Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol Supply voltage VCC VEE Intput voltage Differential input voltage VIN* VIN(diff) Power dissipation Operating temperature PT Topr HA17458 HA17458PS HA17458F HA17458FP Unit +18 –18 +18 –18 +18 –18 +18 –18 V V ±15 ±30 ±15 ±30 ±15 ±30 ±15 ±30 V V 3 1 670* –20 to +75 1 670* –20 to +75 2 2 385* –20 to +75 385* –20 to +75 mW °C Storage temperature Tstg –55 to +125 –55 to +125 –55 to +125 –55 to +125 °C Notes: 1. These are the allowable values up to Ta = 45 °C. Derate by 8.3mW/°C above that temperature. 2. These are the allowable values up to Ta = 31 °C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/°C above that temperature. 3. If the supply voltage is less than ±15V, input voltage should be less than supply voltage. Electrical Characteristics 1 (VCC = –VEE = 15V, Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions RS ≤ 10kΩ Input offset voltage Input offset current VIO IIO — — 2.0 6 6.0 200 mV nA Input bias current Line regulation IIB ∆VIO/∆VCC — — 30 30 500 150 nA µV/V RS ≤ 10kΩ Voltage gain ∆VIO/∆VEE AVD — 86 30 100 150 — µV/V dB RS ≤ 10kΩ RL ≥ 2kΩ, Vout = ±10V Common mode rejection ratio Common mode input voltage range CMR VCM 70 ±12 90 ±13 — — dB V RS ≤ 10kΩ Peak-to-peak output voltage Power dissipation Vop-p Pd ±12 — ±14 90 — 200 V mW RL = 10kΩ No load, 2 channel Slew rate Input resistance SR Rin — 0.3 0.6 1.0 — — V/µs MΩ AVD = 1 Input capacitance Output resistance Cin Rout — — 6.0 75 — — pF Ω Min Typ Max Unit Electrical Characteristics 2 (VCC = –VEE = 15V, Ta = –20 to +75°C) Item Symbol Test conditions RS ≤ 10kΩ Input offset voltage Input offset current VIO IIO — — — — 9.0 400 mV nA Input bias current Voltage gain IIB AVD — 80 — — 1100 — nA dB RL ≥ 2kΩ, Vout = ±10V Peak-to-peak output voltage Vop-p ±10 ±13 — V RL = 2kΩ Rev.1.00 Jun 15, 2005 page 3 of 8 HA17458 Series Characteristic Curves Input Offset Voltage vs. Ambient Temperature Input Bias Current vs. Ambient Temperature 100 VCC = + 15 V VEE = −15 V RS < = 10 kΩ 4 Input Bias Current IIB (nA) Input Offset Voltage VIO (mV) 5 3 2 1 0 −20 0 20 40 60 60 40 20 0 20 40 60 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Input Offset Current vs. Ambient Temperature Power Dissipation vs. Ambient Temperature 200 VCC = + 15 V VEE = −15 V Power Dissipation Pd (mW) Input Offset Current IIO (nA) 80 0 −20 80 20 16 12 8 4 0 −20 VCC = + 15 V VEE = −15 V 0 20 40 60 Ambient Temperature Ta (°C) Rev.1.00 Jun 15, 2005 page 4 of 8 80 80 VCC = + 15 V VEE = −15 V No Load Both Amplifiers 100 0 −20 0 20 40 60 Ambient Temperature Ta (°C) 80 HA17458 Series Output Short Current vs. Ambient Temperature Voltage Gain vs. Ambient Temperature 50 110 Output Short Current IOS (mA) VCC = + 15 V VEE = −15 V RL = 2 kΩ 100 90 80 70 −20 0 20 40 60 Power Dissipation Pd (mW) 30 Source 20 Sink 10 0 20 40 60 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Power Dissipation vs. Supply Voltage Maximum Output Voltage Swing vs. Supply Voltage 200 Ta = 25°C No Load Both Amplifiers 150 100 50 0 ±3 VCC = + 15 V VEE = −15 V VOP-P = 0 V 40 0 −20 80 ±6 ±9 ±12 ±15 Supply Voltage VCC, VEE (V) Rev.1.00 Jun 15, 2005 page 5 of 8 ±18 Maximum Output Voltage Swing VOP-P (V) Voltage Gain AVD (dB) 120 80 20 Ta = 25°C RL = 2 kΩ 16 12 +V 8 -P OP ÐV -P OP 4 0 ±3 ±6 ±9 ±12 ±15 Supply Voltage VCC, VEE (V) ±18 HA17458 Series Voltage Gain vs. Frequency 120 VCC = +15 V VEE = −15 V Ta = 25°C RL = 2 kΩ Voltage Gain AVD (dB) 100 80 60 40 20 0 10 30 100 300 1k 3 k 10 k Frequency (Hz) 30 k 100 k 300 k 1M Phase Angle vs. Frequency VCC = +15 V VEE = −15 V Ta = 25°C RL = 2 kΩ 0 Phase Angle (deg) −40 −80 −120 −160 100 Rev.1.00 Jun 15, 2005 page 6 of 8 300 1k 3k 10 k 30 k Frequency (Hz) 100 k 300 k 1M 3M HA17458 Series Maximum Output Voltage Swing Vop-p (V) 28 VCC = +15 V VEE = −15 V Ta = 25°C RL = 10 kΩ 24 20 16 12 8 4 0 100 500 1k 5k 10k 50k 100k Frequency f (Hz) 500k Maximum Output Voltage Swing Vop-p (V) Maximum Output Voltage Swing vs. Frequency Maximum Output Voltage Swing vs. Load Resistance 16 12 8 VCC = +15 V VEE = −15 V Ta = 25°C 4 0 −4 −8 −12 −16 200 500 1k 5k 10k Load Resistance RL (Ω) Voltage Follower Large Signal Pulse Response Input and Output Voltage (V) 10 Output VCC = +15 V VEE = −15 V RL = 2 kΩ CL = 100 pF Ta = 25°C 0 Input −10 0 20 40 60 Time (µs) Rev.1.00 Jun 15, 2005 page 7 of 8 80 HA17458 Series Package Dimensions JEITA Package Code P-DIP8-6.3x9.6-2.54 RENESAS Code PRDP0008AF-A Previous Code DP-8B MASS[Typ.] 0.51g D 5 E 8 1 4 b3 0.89 Z Reference Symbol Dimension in Millimeters Min Nom 7.62 D 9.6 E 6.3 Max A1 A e1 L A1 0.5 bp 0.38 θ c e1 0.48 c 0.20 θ 0° e 2.29 0.25 0.35 2.54 2.79 15° 1.27 Z 2.54 L JEITA Package Code P-SOP8-4.4x4.85-1.27 RENESAS Code PRSP0008DE-B *1 Previous Code FP-8DGV MASS[Typ.] 0.1g F D 8 0.58 1.3 b3 bp 7.4 5.06 A e 10.6 NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 5 c *2 E HE bp Reference Symbol Terminal cross section ( Ni/Pd/Au plating ) Z e Min Nom Max 4.85 5.25 E 4.4 A2 4 1 Dimension in Millimeters D Index mark *3 bp A1 x M 0.00 0.1 0.35 0.4 0.45 0.15 0.20 0.25 6.5 6.75 A 2.03 bp L1 0.20 b1 c A c1 A1 θ L y Detail F θ 0° HE 6.35 e 1.27 x 0.12 y 0.15 0.75 Z L L Rev.1.00 Jun 15, 2005 page 8 of 8 8° 0.42 1 0.60 1.05 0.85 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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