Transistors SMD Type NPN Transistors 2SC3739 SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Complementary to 2SA1464 1 0.55 ● High Gain Bandwidth Product:fT=200MHz(min) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 1.1 +0.2 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 40 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 40V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 V Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50mA 0.25 0.75 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50mA 1 1.2 hFE(1) VCE= 1V, IC= 150mA 75 150 300 hFE(2) VCE= 2V, IC= 500mA 20 75 DC current gain Turn-on time ton Storage time tstg Turn-off time toff Collector output capacitance Cob Transition frequency fT Unit uA V 35 VCC=30V,IC=150mA,IB1=-IB2=15mA 225 ns 275 VCB= 10V, IE=0,f=1MHz VCE= 10V, IE=-20mA 3.5 200 400 8 pF MHz ■ Classification of hfe(1) Type 2SC3739-B12 2SC3739-B13 2SC3739-B14 Range 75-150 100-200 150-300 Marking B12 B13 B14 www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC3739 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors ■ Typical Characterisitics 2SC3739 www.kexin.com.cn 3