SMD Type Transistors

Transistors
SMD Type
NPN Transistors
2SC4432
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
● High cutoff frequency.
1
● Complementary to 2SA1815
0.55
● High power gain.
+0.2
1.6 -0.1
+0.2
2.8 -0.1
■ Features
2
+0.02
0.15 -0.02
+0.2
1.1 -0.1
+0.1
0.95 -0.1
+0.1
1.9 -0.2
1. Base
0-0.1
+0.1
0.68 -0.1
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
40
Collector - Emitter Voltage
VCEO
18
Emitter - Base Voltage
VEBO
3
Unit
V
Collector Current - Continuous
IC
50
mA
Collector Power Dissipation
PC
250
mW
Junction Temperature
TJ
150
Tstg
-55 to 150
Storage Temperature Range
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
40
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, IB= 0
18
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
3
Collector-base cut-off current
ICBO
VCB= 30V , IE= 0
0.1
Emitter cut-off current
IEBO
VEB= 2V , IC=0
0.1
V
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB=1mA
0.2
Base - emitter saturation voltage
VBE(sat)
IC=10mA, IB=1mA
1.2
DC current gain
hFE
VCE= 10V, IC= 5 mA
Power Gain
PG
VCE= 10V, IC= 10mA,f=100MHz
rbb’CC
Base-to-Collector Time Constant
60
uA
V
270
28
VCE= 10V, IC= 5 mA,f=31.9 MHz
dB
23
Reverse Transfer Capacitance
Cre
VCB= 10V,f=1MHz
0.45
Collector output capacitance
Cob
VCB= 10V,f=1MHz
0.7
fT
VCE= 10V, IC= 5mA
750
Transition frequency
Unit
1.2
ps
pF
MHz
■ Classification of hfe
Type
2SC4432-RT3
2SC4432-RT4 2SC4432-RT5
Range
60-120
90-180
135-270
Marking
RT3
RT4
RT5
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Transistors
SMD Type
NPN Transistors
2SC4432
■ Typical Characterisitics
hFE -- IC
5
Gain-Bandwidth Product, f T -- MHz
3
DC Current Gain, hFE
2
100
7
5
3
2
10
f T -- IC
3
VCE=10V
VCE=10V
2
1000
7
5
3
2
7
5
7 0.1
2
3
5 7 1.0
5 7 10
2
3
5 7 100
Cre -- VCB
100
2
5
3
5
7 1.0
2
3
5
7
2
10
3
5
Collector Current, IC -- mA
PG -- IC
30
f=1MHz
7 100
VCE=10V
28
3
Power Gain, PG -- dB
Reverse Transfer Capacitance, Cre -- pF
3
Collector Current, IC -- mA
7
2
1.0
7
5
3
2
0.1
26
24
22
20
18
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
16
5
3
5
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
3
2
1000
7
5
3
2
100
7
7
1.0
2
3
5
7
2
10
3
5
7
Collector Current, IC -- mA
PC -- Ta
300
IC / IB=10
Collector Dissipation, PC -- mW
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
250
200
150
100
50
5
3
2
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Collector Current, IC -- mA
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2
3
5 7 100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- ϒC
140
160