JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak Reverse Voltage VRM 20 30 40 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V Parameter RMS Reverse Voltage Average Rectified Output Current IO 1 A Peak Forward Surge Current @t=8.3ms IFSM 9 A Repetitive Peak Forward Current IFRM 1.5 A Power Dissipation PD 500 mW Thermal Resistance Junction to Ambient RθJA 200 ℃/W Junction temperature TJ 15 ℃ Storage Temperature TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions IR= 1mA B5817W B5818W B5819W B5817W VR=20V B5818W VR=30V VR=40V B5819W B5817W Forward voltage VF B5818W B5819W Diode capacitance CD Min Max 20 30 40 V 1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz Unit 120 mA V V V pF B,Jul,2012 Typical Characteristics o C =2 5 a T 0.2 0.4 FORWARD VOLTAGE 0.6 VF (mW) 500 400 POWER DISSIPATION 100 10 VR 0.01 0 5 100 (V) 10 15 20 VR 25 (V) Power Derating Curve 600 Ta=25℃ REVERSE VOLTAGE o Ta=25 C REVERSE VOLTAGE Capacitance Characteristics 1 0.1 (V) f=1MHz 10 0.1 o 1E-3 0.8 Characteristics Ta=100 C 1 PD 1000 CAPACITANCE BETWEEN TERMINALS CT (pF) REVERSE CURRENT IR o C =1 00 a 0.1 0.01 0.0 Reverse 10 1 T FORWARD CURRENT Characteristics (mA) Forward IF (A) 5 B5817W 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃) B,Jul,2012