JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes MBR0520-MBR0580 SOD-123 Schottky Barrier Diode FEATURES z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Application and High Current Capability MARKING: MBR0520:R2 MBR0530:R3 MBR0540:R4 MBR0560:R6 MBR0580:R8 Maximum Ratings @Ta=25℃ Parameter S ymbol Maximum recurrent peak reverse voltage Maximum RMS voltage Mean rectifying current MBR MBR MBR MBR MBR 0520 0530 0540 0560 0580 20 14 0 30 21 3 40 28 4 0.5 60 42 80 56 VRRM VRMS IO Peak forward surge current Unit V A IFSM 5.5 A Pd 410 mW RθJA 244 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ Power Dissipation Thermal Resistance Junction to Ambient Electrical Ratings @Ta=25℃ Parameter Forward voltage MBR0520 MBR0530 MBR0540 MBR0560 MBR0580 Symbol Min. Typ. 0.45 0.55 0.55 0.70 0.80 VF Reverse current MBR0520 MBR0530 MBR0540 MBR0560 MBR0580 IR Capacitance between terminals CT Max. 80 30 Unit Conditions V IF=500mA μA pF VR=20V VR=30V VR=40V VR=60V VR=80V VR=4V, f=1MHZ C,Nov,2013 Typical Characteristics Forward Characteristics Reverse 10000 100 1000 (uA) (mA) 500 REVERSE CURRENT IR IF a T= a 25 ℃ =1 00 ℃ 10 T FORWARD CURRENT MBR0520 1 Characteristics Ta=100℃ 100 10 Ta=25℃ 1 0.1 0 100 200 FORWARD VOLTAGE 300 VF 400 500 0.1 0.1 4 8 12 REVERSE VOLTAGE (mV) 16 VR 20 (V) Power Derating Curve 450 410 POWER DISSIPATION PD (mW) 360 270 180 90 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) C,Nov,2013