JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak Reverse Voltage VRM 20 30 40 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V Parameter RMS Reverse Voltage Average Rectified Output Current 1 IO A Peak Forward Surge Current @t=8.3ms IFSM 9 A Repetitive Peak Forward Current IFRM 1.5 A Power Dissipation Pd 500 mW RθJA 250 ℃/W TJ 125 ℃ TSTG -55~+150 ℃ Thermal Resistance Junction to Ambient Junction temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions IR= 1mA Reverse breakdown voltage Reverse voltage leakage current IR VR=20V VR=30V VR=40V B5817W Forward voltage VF B5818W B5819W Diode capacitance B5817W B5818W B5819W B5817W B5818W B5819W V(BR) CD Min Max 20 30 40 V 1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz Unit 120 mA V V V pF B,Jul,2012 Typical Characteristics Forward Characteristics a T a = 25 ℃ T REVERSE CURRENT IR =1 00 ℃ (A) IF FORWARD CURRENT 1 0.1 0.0 Reverse 10 (mA) 10 B5819W Characteristics Ta=100℃ 1 0.1 Ta=25℃ 0.01 1E-3 0.4 0.8 1.2 FORWARD VOLTAGE 1.6 VF 2.0 01 10 (V) 20 REVERSE VOLTAGE 30 VR 40 (V) Power Derating Curve Capacitance Characteristics 1000 600 PD (mW) f=1MHz POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 100 10 0.1 500 400 300 200 100 0 1 REVERSE VOLTAGE 10 VR (V) 20 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃) B,Jul,2012