JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR10150FCT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit 150 V 105 V 10 A 120 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage Average rectified output current IO IFSM PD RΘJA Non-Repetitive peak forward surge current 8.3ms half sine wave ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse voltage V(BR) IR=0.1mA Reverse current IR VR=150V Forward voltage Typical total capacitance Min Typ Max 150 Unit V 0.1 mA VF1 IF=5A 1 V VF2* IF=10A 1 V Ctot VR=5V,f=1MHz 500 pF *Pulse test B,Nov,2013 Typical Characteristics MBR10150FCT Reverse Characteristics Forward Characteristics 1000 100 Ta=100℃ REVERSE CURRENT IR FORWARD CURRENT Ta=100℃ (uA) 1000 IF (mA) 10000 100 Ta=25℃ 10 10 1 Ta=25℃ 0.1 0.01 1 1E-3 0 200 400 600 FORWARD VOLTAGE 800 1000 0 30 VF (mV) 60 90 REVERSE VOLTAGE 120 VR 150 (V) Power Derating Curve Capacitance Characteristics Per Diode 300 2.5 Ta=25℃ f=1MHz 2.0 PD 200 POWER DISSIPATION JUNCTION CAPACITANCE CJ (pF) (W) 250 150 100 1.5 1.0 0.5 50 0 0.0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Nov,2013