JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) TO-92 FEATURES z Audio Amplifier z Flash Unit of Camera z Switching Circuit 1.EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Value 42 22 6 5 750 150 Units V V V A mW -55-150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA hFE(1) VCE=2V, IC= 0.15 mA 150 hFE(2) VCE= 2V,IC = 500 mA 340 hFE(3) VCE=2V, IC = 2A 150 DC current gain Collector-emitter saturation voltage fT Transition frequency CLASSIFICATION OF VCE(sat) 2000 IC=3000mA,IB=100 mA VCE=6V, IC=50mA,f=30MHz 0.35 150 V MHz hFE(2) Rank R T V Range 340-600 560-950 900-2000 A,May,2011 Typical Characterisitics D965 hFE Static Characteristic 2000 1500 IB=4mA COMMON EMITTER Ta=25℃ IB=3.5mA hFE IB=3mA 1600 VCE=2V IB=2.5mA 1400 IB=2mA 1200 1000 IB=1.5mA 800 600 IB=1mA Ta=25 ℃ 400 IB=0.5mA 200 0 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— 8 VCE 9 100 0.15 10 1 10 100 COLLECTOR CURRENT (V) IC VBEsat 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=100 ℃ 1000 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 1800 IC —— 100 Ta=100℃ Ta=25℃ 10 (mA) IC —— 1000 Ta=25℃ Ta=100℃ β=30 β=30 1 0.3 1 10 100 COLLECTOR CURRENT IC IC 100 0.3 5000 1 10 100 COLLECTOR CURRENT (mA) —— VBE fT 1000 IC 5000 (mA) IC (MHz) 1000 —— 1000 fT TRANSITION FREQUENCY T= a 25 ℃ ℃ 100 T= a 10 0 COLLCETOR CURRENT IC (mA) 5000 1000 5000 1000 IC 10 1 0 200 400 600 800 BASE-EMMITER VOLTAGE 1000 Cob/ Cib —— VBE 1000 10 VCE=6V Ta=25 ℃ VCE=2V 0.1 100 1 1200 10 2 (mV) 100 COLLECTOR CURRENT VCB/ VEB PC 900 IC (mA) —— Ta COLLECTOR POWER DISSIPATION PC (mW) Cib 100 CAPACITANCE C (pF) 800 Cob 10 f=1MHz IE=0/ IC=0 Ta=25 ℃ 1 0.1 1 REVERSE VOLTAGE 10 V (V) 20 700 600 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 A,May,2011