SOT-23 Plastic-Encapsulate Transistors 2SC2412

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
2SC2412
Plastic-Encapsulate Transistors
SOT-23
TRANSISTOR (NPN)
FEATURES
· Low Cob ,Cob = 2.0 pF (Typ).
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : BQ, BR, BS
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=1mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
120
560
IC=50mA,IB=5mA
0.4
VCE=12V,IC=-2mA,f=100MHz
160
VCB=12V,IE=0,f=1MHz
2.0
V
MHz
3.5
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
R
S
120 - 270
180 - 390
270 - 560
BQ
BR
BS
A,May,2011
Typical Characteristics
VCE
——
5
IC
hFE
20uA
Ta=100℃
Ta=25℃
DC CURRENT GAIN
IC
14uA
12uA
3
IC
hFE
(mA)
16uA
4
——
500
COMMON
EMITTER
Ta=25℃
18uA
COLLECTOR CURRENT
2SC2412
10uA
8uA
2
6uA
100
4uA
1
COMMON EMITTER
VCE= 6V
IB=2uA
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCEsat
——
10
0.1
20
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
100
Ta=100 ℃
Ta=25℃
COLLECTOR CURREMT
IC
——
IC
100 150
(mA)
IC
800
Ta=25℃
600
Ta=100 ℃
400
0.1
100 150
10
IC
β=10
β=10
1
10
VBEsat ——
1000
300
10
0.1
1
COLLECTOR CURRENT
VCE (V)
1
10
COLLECTOR CURREMT
(mA)
VBE
150
fT
300
——
100 150
IC
(mA)
IC
(MHz)
fT
T =2
5℃
a
10
TRANSITION FREQUENCY
100
T =1
00℃
a
BASE-EMMITER VOLTAGE VBE (mV)
100
COMMON EMITTER
VCE=6V
Ta=25℃
1
0
300
600
900
COLLECTOR CURRENT
50
Cob/Cib
——
IC
COMMON EMITTER
VCE=12V
10
0.5
1200
1
10
(mA)
100
COLLECTOR CURRENT
VCB/VEB
PC
250
——
IC
(mA)
Ta
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
10
CAPACITANCE
C
(pF)
Ta=25 ℃
Cob
1
0.1
1
REVERSE VOLTAGE
10
V
(V)
20
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
A,May,2011