JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR (NPN) 1.EMITTER FEATURES z High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W 312.5 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Thermal Resistance From Junction To Ambient RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 nA Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V, IC=1mA Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 1.42 V fT Transition frequency 28 270 800 VCE=5V,IC=50mA,f=400MHz MHz CLASSIFICATION OF hFE RANK D E F G H I J RANGE 28-45 39-60 54-80 72-108 97-146 132-198 180-270 A,Jun,2011 Typical Characteristics Static Characteristic 10 (mA) COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 90uA 8 hFE IC 80uA DC CURRENT GAIN 70uA COLLECTOR CURRENT hFE —— IC 160 100uA 60uA 6 S9018 50uA 40uA 4 30uA Ta=100℃ 120 Ta=25℃ 80 40 20uA 2 IB=10uA 0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 1 VCEsat —— VBEsat —— IC 1.0 Ta=100℃ 0.6 —— Ta=100℃ 0.1 Ta=25℃ 1 VBE 50 10 COLLECTOR CURRENT Cob / Cib 10 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 Ta=25℃ Ta=100℃ Cib CAPACITANCE C (pF) 10 Ta=25℃ 1 0.1 0.2 0.6 fT 1200 Cob 1 0.1 0.4 0.8 1.0 BASE-EMITTER VOLTAGE —— 1.2 1 10 REVERSE VOLTAGE VBE(V) IC PC 0.5 1000 fT TRANSITION FREQUENCY IC β=10 (mA) COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT IC (mA) IC IC (mA) 0.01 50 10 COLLECTOR CURRENT (MHz) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 0.8 1 IC 0.3 β=10 0.4 0.1 50 10 COLLECTOR CURRENT (V) 800 600 400 VCE=5V —— V 20 (V) Ta 0.4 0.3 0.2 0.1 Ta=25℃ 200 0.0 1 10 3 COLLECTOR CURRENT IC (mA) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A,Jun,2011