IS31AP4915A-QFLS2-TR

IS31AP4915A
20VP-P CHARGE PUMP CERAMIC SPEAKER DRIVER
August 2013
GENERAL DESCRIPTION
FEATURES
The IS31AP4915A features a mono power amplifier
with an integrated charge-pump power supply
specifically designed to drive the high capacitance of
a ceramic loudspeaker.

The IS31AP4915A maximizes battery life by offering
high performance efficiency.
The IS31AP4915A is ideally suited to deliver the high
output-voltage swing required to drive
ceramic/piezoelectric speakers.
The device utilizes comprehensive click-and-pop
suppression and shutdown control. The
IS31AP4915A is fully specified over the -40°C to
+85°C extended temperature range and is available
in small lead-free 16-pin QFN (4mm × 4mm)
packages.





Integrated charge-pump power supply - no
inductor required
Thermal protection
Pop reduction circuitry
20VP-P voltage swing into piezoelectric speaker
QFN-16, 4mm × 4mm
ESD (HBM): 2kV
ESD (MM): 200V
APPLICATIONS





CD/MP3 players
Smart phones
Cellular phones
PDAs
Handheld gaming
TYPICAL APPLICATION CIRCUIT
Figure 1
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
Typical Application Circuit
1
IS31AP4915A
PIN CONFIGURATION
Package
Pin Configuration (Top View)
QFN-16
PIN DESCRIPTION
No.
Pin
Description
1
C1P
Charge pump flying capacitor positive terminal.
2
PGND
Power ground, connect to ground.
3
C1N
Charge pump flying capacitor negative terminal.
4
PVSS
Output from charge pump.
5, 13
NC
No connection.
6
SVSS
Amplifier negative supply, connect to PVSS.
7
OUT+
Positive output signal.
8
SVCC
Amplifier positive supply, connect to PVCC.
9
OUT-
Negative output signal.
10
FB
Feed back.
11, 15
SDB
Shutdown, active low logic.
12
IN
Audio input signal.
14
SGND
Signal ground, connect to ground.
16
PVCC
Charge pump supply voltage, connect to positive supply.
Thermal Pad
Connect to GND.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
2
IS31AP4915A
ORDERING INFORMATION
Industrial Range: -40°C to +85°C
Order Part No.
Package
QTY/Reel
IS31AP4915A-QFLS2-TR
QFN-16, Lead-free
2500
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
3
IS31AP4915A
ABSOLUTE MAXIMUM RATINGS
Supply voltage, VCC
Voltage at any input pin
Maximum junction temperature, TJMAX
Storage temperature range, TSTG
Operating temperature range, TA
-0.3V ~ +7.0V
-0.3V ~ VCC+0.3V
150°C
-65°C ~ +150°C
−40°C ~ +85°C
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA=25°C, VCC = 2.5V ~ 5.5V (unless otherwise noted). (Note 1)
Symbol
Parameter
Condition
Min.
SVCC, PVCC Supply voltage
VIH
High level input voltage
VIL
Low level input voltage
|VOS|
2.5
Supply current
ISD
Shutdown current
Max.
Unit
5.5
V
1.75
V
0.5
Output offset voltage
ICC
Typ.
6
V
mV
VCC = 3V, VSDB = VCC
6.0
8.0
VCC = 5V, VSDB = VCC
8.5
10.5
VSDB = 0V
mA
1
µA
Max.
Unit
ELECTRICAL CHARACTERISTICS
VCC = 3.6V, TA = 25°C (unless otherwise noted). (Note 2)
Symbol
VOUT
THD+N
Parameter
Output voltage
Total harmonic distortion plus
noise
Condition
f = 1kHz
THD+N = 10%
RL= 1μF+10Ω
Min.
Typ.
VCC = 5.0V
7.8
VCC = 3.6V
5.6
VCC = 2.7V
4.3
RL= 1μF+10Ω,VOUT = 1kHz/2VRMS
0.004
RL= 1μF+10Ω,VOUT = 1kHz/4VRMS
0.014
VRMS
%
VNO
Noise output voltage
10
µVRMS
fOSC
Charge pump switching
frequency
320
kHz
tON
Start-up time from shutdown
450
µs
SNR
Signal-to-noise ratio
100
dB
TOVP
Thermal shutdown threshold
160
°C
THY
Thermal shutdown hysteresis
15
°C
Note 1: Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other
temperature range, are guaranteed by design, characterization and process control.
Note 2: Guaranteed by design.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
4
IS31AP4915A
TYPICAL OPERATING CHARACTERISTICS
20
VCC = 3.6V
RL = 10Ω+1µH
5
1
THD+N(%)
THD+N(%)
5
20
VCC = 2.7V
RL = 10Ω+1µH
0.1
VOUT = 3.0Vrms
1
0.1
VOUT = 4.0Vrms
0.01
0.01
VOUT = 1.25Vrms
0.001
20
50
100
200
VOUT = 2.0Vrms
500
1k
2k
5k
0.001
20
10k 20k
50
100
200
Frequency(Hz)
Figure 2
THD+N vs. Frequency
2k
5k
THD+N vs. Frequency
Figure 3
VCC = 5.0V
RL = 10Ω+1µH
RL = 10Ω+1µH
f = 1kHz
5
1
1
0.1
VCC = 2.7V
0.1
VOUT = 6.0Vrms
VCC = 5.0V
0.01
0.01
VCC = 3.6V
VOUT = 3.0Vrms
0.001
20
0.001
50
100
200
500
1k
2k
5k
10k 20k
500m 1
2
3
Figure 4
THD+N vs. Frequency
5
6
7
8
Figure 5
THD+N vs. Output Voltage
70
8
7
Supply Current(mA)
Supply Current(mA)
4
Output Voltage(V)
Frequency(Hz)
6
5
4
VCC = 5V
f = 1kHz
60
50
40
30
20
3
2
2.5
10k 20k
20
THD+N(%)
THD+N(%)
1k
Frequency(Hz)
20
5
500
10
0
3
3.5
4
4.5
5
5.5
0
1
Supply Current vs. Supply Voltage
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
3
4
5
6
7
Output Voltage(VRMS)
Supply Voltage(V)
Figure 6
2
Figure 7
Supply Current vs. Output Voltage
5
IS31AP4915A
FUNCTIONAL BLOCK DIAGRAM
C1N C1P SVSS
SVCC
PVCC
Click-and-pop
Suppression
UVLO &
SD Control
IN
Charge Pump
PVSS
OUTFB
OUT+
SDB
Bias
SGND
PGND
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
6
IS31AP4915A
APPLICATION INFORMATION
INPUT-BLOCKING CAPACITORS
DECOUPLING CAPACITORS
DC input-blocking capacitors are required to be added
in series with the audio signal into the input pin of the
IS31AP4915A. This capacitor block the DC portion of
the audio source and allow the IS31AP4915A inputs to
be properly biased to provide maximum performance.
The IS31AP4915A require adequate power supply
decoupling to ensure that the noise and total harmonic
distortion (THD) are low. A good low
equivalent-series-resistance (ESR) ceramic capacitor,
typically 1μF, placed as close as possible to the device
VCC lead works best. Placing this decoupling capacitor
close to the IS31AP4915A is important for the
performance of the amplifier. For filtering lower
frequency noise signals, a 10μF or greater capacitor
placed near the audio power amplifier would also help,
but it is not required in most applications because of
the high PSRR of this device.
These capacitors form a high-pass filter with the input
impedance of the IS31AP4915A. The cutoff frequency
is calculated using Equation 1. For this calculation, the
capacitance used is the input-blocking capacitor and
the resistance is the input impedance of the
IS31AP4915A. Because the gains of both the
IS31AP4915A is fixed, the input impedance remains a
constant value. Using the input impedance value from
the operating characteristics table, the frequency
and/or capacitance can be determined when one of
the two values is given.
f CIN 
or CIN 
1
2RIN C IN
(1)
1
LAYOUT RECOMMENDATIONS
The SGND and PGND pins of the IS31AP4915A must
be routed separately back to the decoupling capacitor
in order to provide proper device operation. If the
SGND and PGND pins are connected directly to each
other, the part functions without risk of failure, but the
noise and THD performance do not meet the
specifications.
2f CIN RIN
CHARGE PUMP FLYING CAPACITOR AND PVSS
CAPACITOR
The charge pump flying capacitor serves to transfer
charge during the generation of the negative supply
voltage. The PVSS capacitor must be at least equal to
the charge pump capacitor in order to allow maximum
charge transfer. Low ESR capacitors are an ideal
selection, and a value of 10μF is typical. Capacitor
values that are smaller than 10μF can be used, but
the maximum output power is reduced and the device
may not operate to specifications
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
7
IS31AP4915A
CLASSIFICATION REFLOW PROFILES
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Pb-Free Assembly
150°C
200°C
60-120 seconds
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
Liquidous temperature (TL)
217°C
Time at liquidous (tL)
60-150 seconds
Peak package body temperature (Tp)*
Max 260°C
Time (tp)** within 5°C of the specified
classification temperature (Tc)
Max 30 seconds
Average ramp-down rate (Tp to Tsmax)
6°C/second max.
Time 25°C to peak temperature
8 minutes max.
Figure 8
Classification Profile
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
8
IS31AP4915A
PACKAGE INFORMATION
QFN-16
Note: All dimensions in millimeters unless otherwise stated.
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 08/08/2013
9