SPW17N80C3

SPW17N80C3
CoolMOSTM Power Transistor
Product Summary
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
V DS
800
V
R DS(on)max @ Tj = 25°C
0.29
Ω
88
nC
Q g,typ
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO247-3
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
Package
Marking
SPW17N80C3
PG-TO247-3
17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
17
T C=100 °C
11
Pulsed drain current2)
I D,pulse
T C=25 °C
51
Avalanche energy, single pulse
E AS
I D=3.4 A, V DD=50 V
670
Avalanche energy, repetitive t AR2),3)
E AR
I D=17 A, V DD=50 V
0.5
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev. 2.92
Unit
A
mJ
17
A
V DS=0…640 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
227
W
-55 ... 150
°C
M2.5 screws
page 1
50
Ncm
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Value
Unit
17
A
T C=25 °C
Diode pulse current2)
I S,pulse
51
Reverse diode dv /dt 4)
dv /dt
4
V/ns
Parameter
Symbol Conditions
Values
Unit
min.
typ.
max.
-
-
0.55
leaded
-
-
62
1.6 mm (0.063 in.)
from case for 10s
-
-
260
°C
800
-
-
V
-
870
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
Soldering temperature,
T sold
wave soldering only allowed at leads
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=17 A
Gate threshold voltage
V GS(th)
V DS=V GS, I D=1.0 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
-
25
V DS=800 V, V GS=0 V,
T j=150 °C
-
150
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=11 A,
T j=25 °C
-
0.25
0.29
Ω
V GS=10 V, I D=11 A,
T j=150 °C
-
0.67
-
f =1 MHz, open drain
-
0.85
-
Gate resistance
Rev. 2.92
RG
page 2
Ω
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2300
-
-
94
-
-
72
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
C o(er)
related5)
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
-
210
-
Turn-on delay time
t d(on)
-
25
-
Rise time
tr
-
15
-
Turn-off delay time
t d(off)
-
72
-
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
12
-
Gate to drain charge
Q gd
-
45
-
Gate charge total
Qg
-
88
117
Gate plateau voltage
V plateau
-
5.5
-
V
-
1
1.2
V
-
550
-
ns
-
15
-
µC
-
51
-
A
V DD=400 V,
V GS=10 V, I D=17 A,
R G=4.7 ? ,T j=25 °C
ns
Gate Charge Characteristics
V DD=640 V, I D=17 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=I S=17 A,
T j=25 °C
V R=400 V,
I F=I S=17 A,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt=200A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.92
page 3
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
240
limited by on-state
resistance
200
1 µs
10 µs
101
160
100 µs
I D [A]
P tot [W]
1 ms
120
DC
10 ms
100
80
40
10-1
0
0
25
50
75
100
125
150
1
10
T C [°C]
100
1000
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
ZthJC=f(tP)
I D=f(V DS); T j=25 °C; t p=10 µs
parameter: D=t p/T
parameter: V GS
100
60
20 V
50
10 V
0.5
0.2
I D [A]
Z thJC [K/W]
40
10-1
0.1
30
6V
0.05
20
0.02
5.5 V
0.01
5V
10
single pulse
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
t p [s]
Rev. 2.92
0
5
10
15
20
25
V DS [V]
page 4
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C; t p=10 µs
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
35
1.4
20 V
1.3
30
10 V
1.2
6V
25
R DS(on) [Ω]
1.1
I D [A]
20
5.5 V
15
1
10 V
6.5 V
0.9
5V
6V
10
0.8
5.5 V
4.5 V
4 V 4.5 V
5
5V
0.7
0
0.6
0
5
10
15
20
25
0
10
20
V DS [V]
30
40
50
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=11 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
60
0.8
25 °C
50
0.6
I D [A]
R DS(on) [Ω]
40
0.4
98 %
typ
150 °C
30
20
0.2
10
0
0
-60
-20
20
60
100
140
180
Rev. 2.92
0
2
4
6
8
10
V GS [V]
T j [°C]
page 5
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=17 A pulsed
I F=f(V SD); t p=10 µs
parameter: V DD
parameter: T j
102
10
25°C (98°C)
8
150°C (98%)
25 °C
160 V
101
640 V
150 °C
I F [A]
V GS [V]
6
4
100
2
10-1
0
0
20
40
60
80
0
100
0.5
1
Q gate [nC]
1.5
V SD [V]
12 Drain-source breakdown voltage
E AS=f(T j); I D=3.4 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
700
960
600
920
500
880
V BR(DSS) [V]
E AS [mJ]
11 Avalanche energy
400
300
840
800
200
760
100
720
0
680
25
50
75
100
125
150
T j [°C]
Rev. 2.92
2
-60
-20
20
60
100
140
180
T j [°C]
page 6
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
104
18
16
Ciss
14
103
102
E oss [µJ]
C [pF]
12
Coss
10
8
6
Crss
101
4
2
100
0
0
100
200
300
400
500
600
700
800
V DS [V]
Rev. 2.92
0
100
200
300
400
500
600
700
800
V DS [V]
page 7
2014-04­29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
Definition of diode switching characteristics
Rev. 2.92
page 8
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
PG-TO247-3: Outline
*Please refer to the last page for the updated specification.
Dimensions in mm/inches
Rev. 2.92
page 9
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
SPW17N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.92
page 10
2014-04-29
Please note the new package dimensions according to PCN 2009-134-A
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1
New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.4, 2014-04-29