INFINEON SPW24N60C3_08

SPW24N60C3
Cool MOS™ Power Transistor
Feature
VDS @ Tjmax
650
V
RDS(on)
0.16
Ω
ID
24.3
A
• New revolutionary high voltage technology
• Ultra low gate charge
PG-TO247
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPW24N60C3
Package
PG-TO247
Ordering Code
Q67040-S4640
Marking
24N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
24.3
TC = 100 °C
15.4
Pulsed drain current, tp limited by Tjmax
I D puls
72.9
Avalanche energy, single pulse
EAS
780
mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
1
I D = 24.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage static
VGS
24.3
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
240
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Reverse diode dv/dt 4)
dv/dt
Rev. 2.5
Page 1
15
V/ns
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 480 , ID = 24.3 , Tj = 125 °C
Thermal Characteristics
Parameter
Symbol
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
0.52
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Soldering temperature, wavesoldering
Tsold
-
-
260
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=24.3A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=1200µΑ, VGS=VDS
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.5
RG
µA
Tj=25°C,
-
0.1
1
Tj=150°C
-
-
100
VGS=20, VDS =0V
-
-
100
Ω
VGS=10V, ID=15.4A,
Tj=25°C
-
0.14
0.16
Tj=150°C
-
0.34
-
f=1MHz, open Drain
-
0.66
-
Page 2
nA
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Transconductance
Symbol
g fs
Conditions
V DS≥2*I D*RDS(on)max,
Values
Unit
min.
typ.
max.
-
21.5
-
S
pF
ID=15.4A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
3000
-
Output capacitance
Coss
f=1MHz
-
1000
-
Reverse transfer capacitance
Crss
-
60
-
-
141
-
-
224
-
-
13
-
Effective output capacitance, 2) Co(er)
V GS=0V,
energy related
V DS=0V to 480V
Effective output capacitance, 3) Co(tr)
pF
time related
Turn-on delay time
td(on)
V DD=380V, V GS=0/10V,
ns
ID=24.3A, R G=3.3
Rise time
tr
V DD=380V, V GS=0/10V,
-
21
-
Turn-off delay time
td(off)
ID=24.3A, R G=3.3Ω
-
140
-
Fall time
tf
-
14
-
-
12.7
-
-
45.8
-
-
104.9
135
-
5
-
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=480, ID=24.3A
VDD=480V, ID=24.3A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=24.3A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
4I <=I , di/dt<=200A/us, V
SD
D
DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 2.5
Page 3
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
24.3
-
-
72.9
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=480V, IF=IS ,
-
600
-
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
13
-
µC
Peak reverse recovery current
Irrm
-
70
-
A
Peak rate of fall of reverse
dirr /dt
-
1400
-
A/µs
recovery current
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.006524
R th2
Cth1
0.0004439
0.013
Cth2
0.001662
R th3
0.025
Cth3
0.002268
R th4
0.096
Cth4
0.006183
R th5
0.117
Cth5
0.014
R th6
0.053
Cth6
0.104
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.5
Page 4
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
260
10 2
SPW24N60C3
W
A
220
200
10 1
ID
Ptot
180
160
140
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
120
100
80
10 -1
60
40
20
0
0
20
40
60
80
100
120
°C
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
10
0
3
100
Vgs = 20V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
80 Vgs = 6V
Vgs = 5.5V
70 Vgs = 5V
Vgs = 4.5V
60 Vgs = 4V
A
K/W
ID
ZthJC
10 -1
10 -2
50
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -3
40
30
20
10
10 -4 -7
10
Rev. 2.5
10
-6
10
-5
10
-4
10
-3
s
tp
10
-1
Page 5
0
0
4
8
12
16
20
26
V
VDS
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C
RDS(on)=f(ID)
parameter: tp = 10 µs, VGS
parameter: Tj=150°C, V GS
50
1
Vgs = 20V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
40 Vgs = 5V
Vgs = 4.5V
35 Vgs = 4V
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 6.5V
Vgs = 20V
Ω
RDS(on)
ID
A
30
25
0.8
0.7
0.6
20
0.5
15
0.4
10
0.3
5
0
0
4
8
12
16
20
0.2
0
26
V
VDS
5
10
15
20
25
30
35
40
A 50
ID
7 Drain-source on-state resistance
8 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 15.4 A, VGS = 10 V
parameter: tp = 10 µs
100
Ω
A
0.8
80
0.7
70
ID
RDS(on)
1
SPW24N60C3
0.6
60
0.5
50
0.4
40
0.3
30
98%
0.2
Tj = 25°C
Tj = 150°C
20
typ
0.1
0
-60
10
-20
20
60
100
°C
180
Tj
Rev. 2.5
Page 6
0
0
1
2
3
4
5
6
7
8
V 10
VGS
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
9 Typ. gate charge
10 Forward characteristics of body diode
VGS = f (QGate)
IF = f (VSD)
parameter: ID = 24.3 A pulsed
parameter: Tj , tp = 10 µs
16
10 2
SPW24N60C3
V
SPW24N60C3
A
10
10 1
0.2 VDS max
IF
VGS
12
0.8 VDS max
8
6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
0
0
Tj = 150 °C (98%)
20
40
60
80
100
10 -1
0
140 nC 170
120
0.4
0.8
1.2
1.6
2
2.4 V
QGate
3
VSD
11 Avalanche SOA
12 Avalanche energy
IAR = f (tAR)
EAS = f (Tj)
par.: Tj ≤ 150 °C
par.: ID = 10 A, VDD = 50 V
28
0.9
mJ
A
0.7
IAR
EAS
20
16
0.6
0.5
Tj(START)=25°C
12
0.4
0.3
8
Tj(START)=125°C
0.2
4
0 -3
10
Rev. 2.5
0.1
10
-2
10
-1
10
0
10
1
10
2
µs 10
tAR
4
Page 7
0
25
50
75
100
°C
150
Tj
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
13 Drain-source breakdown voltage
14 Avalanche power losses
V(BR)DSS = f (Tj)
PAR = f (f )
parameter: E AR=1mJ
720
SPW24N60C3
1000
V
680
PAR
V(BR)DSS
W
660
600
640
620
400
600
580
200
560
540
-60
-20
20
60
100
°C
0 3
10
180
10
4
5
10
Hz
Tj
10
6
f
15 Typ. capacitances
16 Typ. Coss stored energy
C = f (VDS)
Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 5
28
pF
Ciss
Coss
Crss
10 4
µJ
Eoss
C
20
10 3
16
12
10 2
8
10 1
4
10 0
0
100
200
300
400
V
600
VDS
Rev. 2.5
0
0
100
200
300
400
V
600
VDS
Page 8
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
SPW24N60C3
Definition of diodes switching characteristics
Rev. 2.5
Page 9
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
63:416&
3G72
Rev. 2.5
PDJH
8211
Please note the new package dimensions arccording to PCN 2009-134-A
63:416&
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any
typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon Technologies
Office. Infineon Technologies components may be used in life-support devices or
systems only with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Rev. 2.5
Page 11
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1
New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01