BGB719N7ESD

B GB 719 N 7E SD
Min iatu re ES D rob u s t Lo w No is e
A mplifi er f or e m bed ded F M R adio
Ant ennas in H ands e ts
Applic atio n N ote A N 255
Revision: 1.1
2012-01-18
RF and P r otecti on D evic es
Edition 2012-01-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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persons may be endangered.
BGB719N7ESD
Application Note AN255
Revision History: 2012-01-18
Previous Revision: 1.0
Page
Subjects (major changes since last revision)
Package change TSLP 7-8 >> TSNP 7-6
Trademarks of Infineon Technologies AG
A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™,
CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™,
DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™,
EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™,
HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™,
ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™,
OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™,
ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™,
SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™,
thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™,
X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™.
Other Trademarks
AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™
is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT
Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.).
EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.
MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™
of Diodes Zetex Limited.
Last Trademarks Update 2009-10-19
Application Note AN255, 1.1
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2012-01-18
BGB719N7ESD
List of Content, Figures and Tables
Table of Content
1
1.1
Introduction ........................................................................................................................................ 5
Applications .......................................................................................................................................... 5
2
Performance Overview ...................................................................................................................... 6
3
Application Information ..................................................................................................................... 7
4
Measured Graphs ............................................................................................................................... 8
5
Layout ................................................................................................................................................ 11
Authors .............................................................................................................................................. 12
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
BGB719N7ESD in TSNP-7-6 Package ................................................................................................ 5
FM Radio application schematic .......................................................................................................... 6
Schematics of the BGB719N7ESD application circuit ......................................................................... 7
Insertion Power Gain InBand ............................................................................................................... 8
Input Matching ...................................................................................................................................... 9
Output Matching ................................................................................................................................... 9
Z Parameters Input output matching .................................................................................................. 10
Reverse Isolation................................................................................................................................ 10
BGB719N7ESD evaluation board layout ........................................................................................... 11
List of Tables
Table 1
Table 2
Electrical Characteristics (at room temperature) .................................................................................. 7
Bill-of-Materials..................................................................................................................................... 8
Application Note AN255, 1.1
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2012-01-18
BGB719N7ESD
Introduction
1
Introduction
Features













High performance FM Radio LNA with integrated biasing
Frequency range: 10 MHz to 1 GHz
Low external parts count
Super miniature low profile leadless package TSNP-7-6, 1.26 x 1.4 x 0.37 mm
High gain at only 2.8 mA current consumption
Integrated active biasing circuit enables stable operation point against temperature-,
supply voltage- and processing-variations
Integrated ESD protection for all pins (1.5 kV, HBM)
High input compression point
High input impedance
Excellent noise figure from latest SiGe:C technology
Operation voltage: 1.5 V to 4.0 V
Power-off function
Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product
Applications

Low noise amplifier and active matching for FM reception with small antennas in all kinds of mobile
devices such as cell phones, PDAs, portable FM Radio, MP3 players
Figure 1
BGB719N7ESD in TSNP-7-6 Package
1.1
Applications
FM Radio has a long history to its credit starting from its development in 1933. Today, FM radio is an integral
part of almost all mobile phones. In a common mobile phone, the headset cable serves as antenna for FM
reception, wherein the antenna size (~75 cm) is a bit relaxed.
There is a clear market trend to be able to use FM radio also without the headset cable. The antenna needs
then to be integrated inside the phone. But in this case, the space constraint poses a challenge on the antenna
Application Note AN255, 1.1
5 / 13
2012-01-18
BGB719N7ESD
Performance Overview
design. Shrinking the size of the antenna introduces a high loss in the system which deteriorates the receiver
performance, namely the receiver sensitivity.
Infineon’s latest generation low noise amplifier (LNA) BGB719N7ESD is able to solve this problem by enhancing
the receiver sensitivity. Using it in a hand held device also demands low current consumption, power-off function
and high linearity due to the co-existence of cellular bands.The LNA is designed for worldwide FM band (76108 MHz) and high ESD robustness at the RF-in port, which supports outstanding ESD robustness on system
level. Infineon offers its LNA solution BGB719N7ESD, which fulfills all these performance criteria in a very small
and leadless package TSNP-7-6 (1.26 x 1.4 x 0.375 mm). A further highlight of the BGB719N7ESD is an
integrated active biasing which enables consistent operation with varying temperature and process variations. It
finds its application in all kinds of mobile devices like mobile phones, PDAs, portable FM radio, MP3 players etc.
Putting Infineon’s ESD protection diode ESD0P8RFL in front of the LNA improves the system’s ESD
performance up to 8 kV contact discharge (IEC61000-4-2) at RF input. The diode is mounted in the small
leadless TSLP-4-7 package (1.2 x 0.8 x 0.39 mm) and has a parasitic capacitance of only 0.8 pF.
With this application proposal Infineon offers a perfect solution for an ESD robust LNA for embedded FM radio
antennas in handsets. The design is suited for miniature and slim handset design due to the small form factor of
the TSNP packages. The LNA fits easily into a 8mm x 8mm sized area when using 0402 capacitors.
2
Performance Overview
Table 1 gives a quick overview on the performance of the FM Antenna LNA described in this application note.
All measurements were performed in a 50Ohm environment.
Figure 2
FM Radio application schematic
Application Note AN255, 1.1
6 / 13
2012-01-18
BGB719N7ESD
Application Information
Table 1
Electrical Characteristics (at room temperature)
TA = 25°C, VCC = 3.0V, VPD = 3.0 V, ICCq = 3.0 mA, f = 100MHz
Parameter
Symbol
Value
Unit
Frequency Range
Freq
100
MHz
DC Voltage
Vcc
3
V
DC Current
Icc
2.8
mA
Gain
G
13.5
dB
Noise Figure
NF
1.2
dB
Input Return Loss
RLin
0.5
dB
Output Return Loss
RLout
11
dB
Reverse Isolation
IRev
53
dB
Input P1dB
IP1dB
-6
dBm
Input IP3
IIP3
-14
dBm
Stability
k
>1
--
3
Comment/Test Condition
Unconditionally stable up to 10 GHz
Application Information
In this section, the application circuit for the BGB719N7ESD is described. The circuit requires minimal usage of
external SMD components due to the integration of the biasing circuit which saves PCB space and therefore
cost.
The BGB719N7ESD can be easily matched to electrically short half-loop antennas and monopol antennas.
Therefore a single passive element needs to be placed at the input of the LNA. In case of a half-loop antenna a
shunt capacitance in the range of 35 pF is needed. If the application uses a monopol antenna, a shunt
inductance in the range of 375 nH is required.
The application schematic is shown in Figure 3 and the function of each component is explained in Table 2.
DC,
VCtrl
In
VCtrl
1
Cin
6
DC,
VCC
BGB719N7ESD
RFIN
2
GNDRF
3
7
CBYP
Cout
5
RFOUT
4
NC
Out
(on package
backside)
GNDDC
Matching Element: Inductance for Monopol Antenna
Capacitance for Half Loop Antenna
Figure 3
Schematics of the BGB719N7ESD application circuit
Application Note AN255, 1.1
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2012-01-18
BGB719N7ESD
Table 2
Symbol
Bill-of-Materials
Value
Unit
Size
Manufacturer
Comment
Matching
Element
CIN
330
pF
Various/0402
Shunt C or L depending on the used FM
antenna concept
DC Blocking
COUT
330
pF
Various/0402
DC Blocking
CBYP
47
nF
Various/0402
Bypass Capacitor
4
Various/0402
Measured Graphs
Note: All measurements were performed in a 50Ohm environment.
Insertion Power Gain InBand
15
14.5
14
S21 (dB)
13.5
13
12.5
12
11.5
11
10.5
10
70
Figure 4
75
80
85
90
95
Frequency (MHz)
100
105
110
Insertion Power Gain InBand
Application Note AN255, 1.1
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2012-01-18
BGB719N7ESD
Input Matching
0
-0.2
-0.4
-0.6
100 MHz
-0.4881 dB
-0.8
-1
70
Figure 5
80
90
Frequency (MHz)
100
110
Input Matching
Output Matching
-5
-6
-7
S22 (dB)
-8
-9
-10
-11
-12
-13
-14
-15
70
Figure 6
75
80
85
90
95
Frequency (MHz)
100
105
110
Output Matching
Application Note AN255, 1.1
9 / 13
2012-01-18
BGB719N7ESD
0. 8
1.0
Z Parameters Input output matching
Swp Max
110MHz
2.
0
0.
6
Z11
0.
4
Z22
3.
0
4.
0
5.
0
0.
2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0
.2
.0
.0
.0
Figure 7
Swp Min
70MHz
-1.0
-0 .8
-0
.6
-2
.0
-3
.4
-4
-0
-5
-0
-1 0.
0.2
10 .0
Z Parameters Input output matching
Reverse Isolation
80
75
S12 (dB)
70
65
60
55
50
45
40
70
Figure 8
75
80
85
90
95
Frequency (MHz)
100
105
110
Reverse Isolation
Application Note AN255, 1.1
10 / 13
2012-01-18
BGB719N7ESD
Layout
5
Layout
Figure 9 shows the layout and the component placement of the printed circuit board used to assemble and test
the LNA.
Figure 9
BGB719N7ESD evaluation board layout
Application Note AN255, 1.1
11 / 13
2012-01-18
BGB719N7ESD
Authors
Authors
Thomas Schwingshackl, Application Engineer of Business Unit “RF and Protection Devices”
Ralph Kuhn, Senior Staff Application Engineer of Business Unit “RF and Protection Devices”
----------------------------------------
Application Note AN255, 1.1
12 / 13
2012-01-18
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
AN255