AN316 Low Noise Amplifier for 5 to 6 GHz WLAN using

BF P840 E SD
Low N oise A mpli fier for 5 to 6 G Hz
WLA N Ap plicatio n us ing BF P 840 ES D
Applic atio n N ote A N 316
Revision: Rev. 1.0
2013-05-20
RF and P r otecti on D evic es
Edition 2013-05-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Application Note AN316
Revision History: 2013-05-20
Previous Revision: No previous revision
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,
TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advanced Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by
AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS
Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of
Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems
Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc.
SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software
Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc.
TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™
of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Application Note AN316, Rev. 1.0
3 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
List of Content, Figures and Tables
Table of Content
1
1.1
Introduction ........................................................................................................................................ 5
®
Wi-Fi ................................................................................................................................................... 5
2
2.1
2.2
BFP840ESD Overview ........................................................................................................................ 7
Features ............................................................................................................................................... 7
Key Applications of BFP840ESD ......................................................................................................... 7
3
3.1
3.2
3.3
Low Noise Amplifier for 5 to 6 GHz WLAN with BFP840ESD ........................................................ 8
Description ........................................................................................................................................... 8
Performance Overview ....................................................................................................................... 10
Schematics and Bill-of-Materials ........................................................................................................ 11
4
Measured Graphs ............................................................................................................................. 12
5
Evaluation Board and Layout Information .................................................................................... 19
6
Authors .............................................................................................................................................. 21
7
Remark .............................................................................................................................................. 21
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
®
5 – 6 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11a/n) and WiMAX (IEEE802.16e) Front-End ..... 5
BFP840ESD in SOT343 ....................................................................................................................... 7
Package and pin connections of BFP840ESD in Topview .................................................................. 8
Schematic Diagram of the used Circuit .............................................................................................. 11
Insertion Power Gain of the 5-6 GHz WLAN LNA with BFP840ESD ................................................. 12
Wideband Insertion Power Gain of the 5-6 GHz WLAN LNA with BFP840ESD ............................... 12
Noise Figure of BFP840ESD LNA for 5100 - 5900 MHz ................................................................... 13
Reverse Isolation of the 5-6 GHz WLAN LNA with BFP840ESD ...................................................... 13
Input Matching of the 5-6 GHz WLAN LNA with BFP840ESD ........................................................... 14
Input Matching of the 5-6 GHz WLAN LNA with BFP840ESD (Smith Chart) .................................... 14
Output Matching of the 5-6 GHz WLAN LNA with BFP840ESD ........................................................ 15
Output Matching of the 5-6 GHz WLAN LNA with BFP840ESD (Smith Chart) ................................. 15
Wideband Stability k Factor of the 5-6 GHz WLAN LNA with BFP840ESD ...................................... 16
Wideband Stability Mu Factor of the 5-6 GHz WLAN LNA with BFP840ESD ................................... 16
Input 1dB Compression Point of the BFP840ESD Circuit at 5500 MHz ............................................ 17
rd
Output 3 Order Intercept Point of BFP840ESD at 5500 MHz (LNA input power = -30 dBm) .......... 17
OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 5-6 GHz WLAN LNA with BFP840ESD ..................... 18
Photo of the BFP840ESD 5-6 GHz WLAN LNA Evaluation Board .................................................... 19
Zoom-In Picture of the BFP840ESD 5-6 GHz WLAN LNA Evaluation Board ................................... 19
Layout Proposal for RF Grounding of the 5-6 GHz WLAN LNA with BFP840ESD ........................... 20
PCB Layer Information ....................................................................................................................... 20
List of Tables
Table 1
Table 2
Summary of Measurement Results .................................................................................................... 10
Bill-of-Materials................................................................................................................................... 11
Application Note AN316, Rev. 1.0
4 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Introduction
1
Introduction
1.1
Wi-Fi®
Wireless Fidelity (Wi-Fi®) plays a major role in today’s communications by enabling constant
connection in the 2.4 GHz bands, 5 GHz bands and broadband Internet access for users with
laptops or devices equipped with wireless network interface while roaming within the range of
fixed access points (AP) or a public hotspot. Different applications like home entertainment
with wireless high-quality multimedia signal transmission, home networking notebooks, mass
data storages and printers implement 5–6 GHz Wi-Fi® into their system to offer high-speed
wireless connectivity.
When wider coverage areas are needed and especially when a higher order modulation
scheme is used such as in emerging very high throughput wireless specifications like 256
Quadrature Amplitude Modulation (QAM) in IEEE 802.11ac, the Signal-to-Noise Ratio (SNR)
requirements for both the AP and the client are more stringent. For this kind of high-speed
high data rate wireless communication standards, it is essential to ensure the quality of the
link path. Major performance criteria of these equipments have to be fulfilled: sensitivity,
strong signal capability and interference immunity. Below a general application diagram of a
WLAN system is shown.
WLAN/WiMAX:
4.9 – 5.9 GHz
BPF
LNA
SPDT
Switch
Power Detector
BPF
PA
WLAN/
WiMAX
Transceiver IC
ESD
Diode
Figure 1
®
5 – 6 GHz Wi-Fi Wireless LAN (WLAN, IEEE802.11a/n) and WiMAX (IEEE802.16e) Front-End
Application Note AN316, Rev. 1.0
5 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Introduction
In order to increase the system sensitivity, an excellent Low Noise Amplifier (LNA) in front of
the receiver is mandatory, especially in an environment with very weak signal strength and
because of the insertion loss of the Single Pole, Double Throw (SPDT) switch and the
Bandpass Filter (BPF) or diplexer. The typical allowed receiver chain Noise Figure (NF) of
approx. 2 dB can only be achieved by using a high-gain low noise amplifier.
In addition, strong signal environment can exist when the equipment is next to a transmitter.
In that case, the LNA must be linear enough, i.e. have high 1dB compression point. This
avoids saturation, degradation of the gain and increased noise figure.
This application note is focusing on the LNA block, but Infineon does also support with RFswitches, TVS-diodes for ESD protection and RF Schottky diodes for power detection.
Application Note AN316, Rev. 1.0
6 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
BFP840ESD Overview
2
BFP840ESD Overview
2.1
Features
• Robust very low noise amplifier based on Infineon´s
reliable, high volume SiGe:C technology
• Unique combination of high end RF performance
and robustness: 20 dBm maximum RF input power,
1.5 kV HBM ESD hardness
• Very high transition frequency fT = 80 GHz enables
very low noise figure at high frequencies: NFmin =
0.85 dB at 5.5 GHz, 1.8 V, 6 mA
2
• High gain |S21| = 18.5 dB at 5.5 GHz, 1.8 V, 10 mA
• OIP3 = 23 dBm at 5.5 GHz, 1.5 V, 6 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V
and 1.8 V (2.85 V, 3.3 V, 3.6 V requires
corresponding collector resistor)
• Low power consumption, ideal for mobile
applications
• Easy to use Pb free (RoHS compliant) and halogen
free industry standard package with visible leads
2.2
Figure 2
BFP840ESD in SOT343
Key Applications of BFP840ESD
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
• Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g.
GPS, GLONASS) and C-band LNB (1st and 2nd stage LNA)
• Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
• Ka-band oscillators (DROs)
Application Note AN316, Rev. 1.0
7 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Low Noise Amplifier for 5 to 6 GHz WLAN with BFP840ESD
3
Low Noise Amplifier for 5 to 6 GHz WLAN with BFP840ESD
3.1
Description
BFP840ESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for
high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity
applications. It combines the 80 GHz fT silicon-germanium:carbide (SiGe:C) B9HFM process
with special device geometry technique to reduce the parasitic capacitance between
substrate and transistor that degrades high-frequency characteristics, resulting in an inherent
input matching and a major improvement in power gain in 5 GHz band together with a low
noise figure performance.
The BFP840ESD has an integrated 1.5 kV HBM ESD protection which makes the device
robust against electrostatic discharge and extreme RF input power. The device offers its high
performance at low current and voltage and is especially well-suited for portable battery
powered applications in which low energy consumption is a key requirement.
The BFP840ESD is housed in the industry standard SOT343 package with visible leads.
Further variants are available in flat-lead TSFP-4-1 package (BFP840FESD) and in the lowheight 0.31mm TSLP-3-9 package (BFR840L3RHESD) specially fitting into modules.
Figure 3
shows the pin assignment of package of BFP840ESD in the top view:
B 1
4
E
XYs
E
2
3 C
BFPXXX
Figure 3
Package and pin connections of BFP840ESD in Topview
Application Note AN316, Rev. 1.0
8 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Low Noise Amplifier for 5 to 6 GHz WLAN with BFP840ESD
This application note presents the measurement results of the LNA using BFP840ESD for
5100 MHz to 5900 MHz WLAN applications. Proper RF grounding on PCB has to be ensured
in order to achieve stability k-factor ≥ 1 above 8.5 GHz (Figure 20).
The application circuit requires 10 passive 0402 Surface Mounted Device (SMD) components
and achieves the gain from 16 dB to 15 dB over the frequency band. The NF varies from 1.09
dB to 1.18 dB (SMA and PCB losses are subtracted) over the frequency band. The circuit
achieves an input and output return loss better than 13.8 dB. Furthermore, the circuit is
unconditionally stable from 10 MHz to 15 GHz.
At 5.5 GHz, -10.8 dBm input compression point (IP1dB) is achieved, together with the 14.6
dBm output third intercept point (OIP3) measured with 1MHz tone spacing.
Application Note AN316, Rev. 1.0
9 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
3.2
Performance Overview
Device:
BFP840ESD
Application: Low Noise Amplifier for 5 to 6 GHz WLAN Application
PCB Marking: M130121 BFP840ESD SOT343 (0.4mm x 2)
Table 1
Summary of Measurement Results
Parameter
Symbol
Value
Unit
DC Voltage
VCC
3.0
V
DC Current
ICC
9.2
mA
Note/Test Condition
Frequency Range
Freq
5100
5500
5900
MHz
ON-Mode Gain
GON
16
15.5
15
dB
OFF-Mode Gain
GOFF
-26.2
-26.8
-27.7
dB
Vcc = 0 V, Icc = 0 mA
Noise Figure
NF
1.09
1.13
1.18
dB
SMA and PCB losses
(~0.12 dB) are subtracted
Input Return Loss
RLin
13.8
17.1
19.2
dB
Output Return Loss
RLout
22.1
23.5
17.4
dB
Reverse Isolation
IRev
26.3
25.4
24.7
dB
ON-Mode Input P1dB
IP1dBON
-10.8
dBm
OFF-Mode Input P1dB
IP1dBOFF
>10
dBm
OP1dB
3.6
dBm
IIP3
-1
dBm
Output P1dB
Input IP3
Output IP3
Stability
Vcc = 0 V, Icc = 0 mA
OIP3
14.6
dBm
Power @ Input: -30 dBm
f1= 5500 MHz, f2= 5501
MHz
k
≥ 1.0
--
Stability measured from
10 MHz to 15 GHz
Application Note AN316, Rev. 1.0
10 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
3.3
Schematics and Bill-of-Materials
Vcc= 3.0 V
J3
DC Connector
All passives are “0402“ case size
Inductors: LQG Series
Capacitors: Various
I = 9.2 mA
C3
39 pF
R2
43 Ω
R1
39 kΩ
C4
39 pF
R3
82 Ω
L1
5.1 nH
PCB = M130121 BFP840ESD SOT343 (0.4mm x 2)
PCB Board Material = Standard FR4
Layer spacing (top RF to internal ground plane): 0.2 mm
Table 2
Symbol
J2
RF Port2
OUTPUT
R4
10 Ω
A proper RF grounding is required to ensure the LNA
performance. Please refer to Chapter 5 for the layout
proposal.
Figure 4
C2
10 pF
Q1
BFP840ESD
C1
3.3 pF
J1
RF Port1
INPUT
L2
2.2 nH
Total Component Count = 11
including BFP840ESD transistor
Inductors = 2 (Low Q)
Resistors = 4
Capacitors = 4
Schematic Diagram of the used Circuit
Bill-of-Materials
Value
Unit
Size
Manufacturer
Comment
C1
3.3
pF
0402
Various
Input DC block, Noise & input
matching
C2
10
pF
0402
Various
Output DC block & output matching
RF decoupling / blocking cap
Noise & input matching
C3, C4
39
pF
0402
Various
L1
5.1
nH
0402
Murata LQG series
L2
2.2
nH
0402
Murata LQG series
R1
39
kΩ
0402
Various
R2
43
Ω
0402
Various
R3
82
Ω
0402
Various
R4
10
Ω
0402
Various
High frequency stability improvement
Infineon Technologies
BFP840ESD SiGe:C HBT
Q1
Application Note AN316, Rev. 1.0
SOT343
11 / 22
Output matching & high frequency
stability improvement
DC biasing
DC biasing (provides DC negative
feedback to stabilize DC operating
point over temperature variation,
transistor hFE variation, etc.)
Stability improvement & output
matching
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Measured Graphs
4
Measured Graphs
Insertion Power Gain InBand
18
17
5500 MHz
15.5 dB
16
5100 MHz
16 dB
15
5900 MHz
15 dB
14
13
12
4000
5000
6000
7000
Frequency (MHz)
Figure 5
Insertion Power Gain of the 5-6 GHz WLAN LNA with BFP840ESD
Insertion Power Gain WideBand
20
18
5100 MHz
16 dB
5900 MHz
15 dB
16
5500 MHz
15.5 dB
14
12
10
2000
Figure 6
3000
4000
5000
6000
Frequency (MHz)
7000
8000
Wideband Insertion Power Gain of the 5-6 GHz WLAN LNA with BFP840ESD
Application Note AN316, Rev. 1.0
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2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Measured Graphs
Noise Figure
1.4
1.3
NF(dB)
1.2
1.1
1
5900 MHz
1.18 dB
5600 MHz
1.13 dB
5100 MHz
1.09 dB
0.9
0.8
0.7
5000
Figure 7
5200
5400
5600
Frequency (MHz)
5800
6000
Noise Figure of BFP840ESD LNA for 5100 - 5900 MHz
Reverse Isolation
-10
-15
-20
5900 MHz
-24.7 dB
5100 MHz
-26.3 dB
-25
5500 MHz
-25.4 dB
-30
-35
-40
4000
Figure 8
4500
5000
5500
6000
Frequency (MHz)
6500
7000
Reverse Isolation of the 5-6 GHz WLAN LNA with BFP840ESD
Application Note AN316, Rev. 1.0
13 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Measured Graphs
Input Matching
5
0
-5
5500 MHz
-17.1 dB
-10
5100 MHz
-13.8 dB
-15
5900 MHz
-19.2 dB
-20
100
5100
10100
15000
Frequency (MHz)
Figure 9
Input Matching of the 5-6 GHz WLAN LNA with BFP840ESD
Swp Max
7000MHz
2.
0
6
0.
0.8
1.0
Input Matching Smith
0.
4
0
3.
5900 MHz
r 0.886
x 0.173
0.2
10.0
5100 MHz
r 0.664
x -0.029
-3
.0
.0
-2
-1.0
-0.8
-0
.6
.4
-0
Figure 10
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
10.0
-4
.0
-5.
0
2
-0.
5.0
-10.0
0
0.2
5500 MHz
r 0.768
x 0.089
0
4.
Swp Min
3500MHz
Input Matching of the 5-6 GHz WLAN LNA with BFP840ESD (Smith Chart)
Application Note AN316, Rev. 1.0
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2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Measured Graphs
Output Matching
0
-5
-10
5900 MHz
-17.4 dB
-15
-20
5100 MHz
-22.1 dB
5500 MHz
-23.5 dB
-25
-30
100
5100
10100
15000
Frequency (MHz)
Figure 11
Output Matching of the 5-6 GHz WLAN LNA with BFP840ESD
Swp Max
7000MHz
2.
0
6
0.
0.8
1.0
Output Matching Smith
0.
4
0
3.
5.0
10.0
5100 MHz
r 0.858
x -0.036
-10.0
2
-0.
-4
.0
-5.
0
-3
.0
.0
-2
-1.0
-0.8
-0
.6
.4
-0
Figure 12
5.0
4.0
3.0
2.0
1.0
10.0
0.8
0.6
5500 MHz
r 0.945
x 0.119
0.4
0.2
0.2
0
0
4.
5900 MHz
r 1.099
x 0.267
Swp Min
3500MHz
Output Matching of the 5-6 GHz WLAN LNA with BFP840ESD (Smith Chart)
Application Note AN316, Rev. 1.0
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2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Measured Graphs
Stability k Factor
3
2
1
8769.8 MHz
1.04
0
0
5000
10000
15000
Frequency (MHz)
Figure 13
Wideband Stability k Factor of the 5-6 GHz WLAN LNA with BFP840ESD
Stability Mu Factor
2
1.5
188.01 MHz
1.319
1
169.27 MHz
1.001
0.5
Mu2 factor
Mu1 factor
0
100
5100
10100
15000
Frequency (MHz)
Figure 14
Wideband Stability Mu Factor of the 5-6 GHz WLAN LNA with BFP840ESD
Application Note AN316, Rev. 1.0
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2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Measured Graphs
Input 1dB Compression Point
20
Gain(dB)
15
-30 dBm
15.6 dB
-10.8 dBm
14.6 dB
10
5
0
-30
Figure 15
-25
-20
-15
Pin (dBm)
-10
-5
0
Input 1dB Compression Point of the LNA with BFP840ESD at 5500 MHz
Output 3rd Order Intercept Point
0
Power (dBm)
-20
5500 MHz
-14.6
-40
5502 MHz
-72.7
-60
-80
-100
-120
5498
Figure 16
5499
5500
5501
Frequency (MHz)
5502
5503
rd
Output 3 Order Intercept Point of LNA with BFP840ESD at 5500 MHz (LNA input power = 30 dBm)
Application Note AN316, Rev. 1.0
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2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Measured Graphs
OFF Mode S21
-25
5500 MHz
-26.8 dB
-26
-27
5100 MHz
-26.2 dB
-28
5900 MHz
-27.7 dB
-29
-30
4000
5000
6000
7000
Frequency (MHz)
Figure 17
OFF-Mode (Vcc = 0V, Icc = 0mA) S21 of the 5-6 GHz WLAN LNA with BFP840ESD
Application Note AN316, Rev. 1.0
18 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Evaluation Board and Layout Information
5
Evaluation Board and Layout Information
Figure 18
Photo of the BFP840ESD 5-6 GHz WLAN LNA Evaluation Board
Figure 19
Zoom-In Picture of the BFP840ESD 5-6 GHz WLAN LNA Evaluation Board
Application Note AN316, Rev. 1.0
19 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Evaluation Board and Layout Information
0.4
mm
B
0.4
mm
E
0.4
mm
BFP840ESD
E
0.2
mm
C
0.4
mm
0.3 mm via diameter
Figure 20
Layout Proposal for RF Grounding of the 5-6 GHz WLAN LNA with BFP840ESD
Vias
FR4 Core, 0.2mm
Copper
35µm
Figure 21
FR4 Prepreg,
0.8mm
PCB Layer Information
Application Note AN316, Rev. 1.0
20 / 22
2013-05-20
BFP840ESD
Low Noise Amplifier for 5 to 6 GHz WLAN Application
Authors
6
Authors
Shamsuddin Ahmed, Application Engineer of Business Unit “RF and Protection Devices”
Moakhkhrul Islam, Application Engineer of Business Unit “RF and Protection Devices”
Dr. Chih-I Lin, Senior Staff Engineer/Technical Marketing RF of Business Unit “RF and
Protection Devices”
7
Remark
The graphs are generated with the simulation program AWR Microwave Office®.
Application Note AN316, Rev. 1.0
21 / 22
2013-05-20
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
AN316