RF & Protection Devices Data Sheet BGT24MTR12

BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Data Sheet
Revision 3.2, 2014-07-15
RF & Protection Devices
Edition 2014-07-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC
Revision History: 2014-07-15, Revision 3.2
Previous Revision: 2014-03-25, Revision 3.1
Page
Subjects (major changes since last revision)
24
update recommended footprint drawing (change of ground plains)
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2011-02-24
Data Sheet
3
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
2.1
2.2
2.3
2.4
2.4.1
2.4.2
2.4.3
2.5
2.6
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TX Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
RX Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Temperature Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Power Detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
3.1
3.2
3.3
3.4
3.5
Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Equivalent Circuit Diagram of MMIC Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
17
18
21
23
4
4.1
4.2
4.3
Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24
24
25
26
Data Sheet
4
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Data Sheet
BGT24MTR12 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Timing Diagram of the SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Detail of Compensation Structure (valid for appl. board mat. Ro4350B, 0.254mm acc. to Fig. 5) 21
Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Equivalent Circuit Diagram of MMIC Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Recommended Footprint and Stencil Layout for the VQFN32-9 Package . . . . . . . . . . . . . . . . . . . 24
Reflow Profile for BGT24MTR12 (VQFN32-9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Package Outline (Top, Side and Bottom View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Marking Layout VQFN32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Tape of VQFN32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Data Sheet
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Typical Characteristics TA = -40 .. 105 °C, SPI-Bit 4 = low . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low . . . . . . . . . . . . 11
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low . . . . . . . . . . . . 13
Typical Characteristics Temperature Sensor TA = -40 .. 105 °C . . . . . . . . . . . . . . . . . . . . . . . . . 14
Typical Characteristics Power Detector TA = -40 .. 105 °C, VCC = 3.3 V . . . . . . . . . . . . . . . . . . . 14
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SPI Block Data Bit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SPI Timing and Logic Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Truth Table AMUX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
Revision 3.2, 2014-07-15
Silicon Germanium 24 GHz Transceiver MMIC
1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
BGT24MTR12
Features
24 GHz transceiver MMIC with one transmitter and two receiver units
Fully integrated low phase noise VCO
Switchable prescaler with 1.5 GHz and 23 kHz output
On chip power and temperature sensors
Gilbert based homodyne quadrature receiver
Single ended RF input terminals
Low noise figure NFSSB: 12 dB
High conversion gain: 26 dB
High 1 dB input compression point: -12 dBm
Single supply voltage 3.3 V
Power consumption 690 mW in continuous operating mode
200 GHz bipolar SiGe:C technology b7hf200
Fully ESD protected device
VQFN-32-9 leadless plastic package incl. LTI feature
Pb-free (RoHS compliant) package
Description
The BGT24MTR12 is a Silicon Germanium MMIC for signal generation and reception, operating from 24.0 to 24.25
GHz. It is based on a 24 GHz fundamental voltage controlled oscillator. A switchable frequency prescaler is
included with output frequencies of 1.5 GHz and 23 kHz. The main RF output delivers typ. 11 dBm signal power
to feed an antenna. A RC polyphase filter (PPF) is used for LO quadrature phase generation of the homodyne
quadrature downconversion mixer. Output power sensors as well as a temperature sensor are implemented for
monitoring purposes. The device is controlled via SPI and is manufactured in a 0.18µm SiGe:C technology offering
a cutoff frequency of 200 GHz. The MMIC is packaged in a 32 pin leadless RoHs compliant VQFN package.
Product Name
Package
Chip
Marking
BGT24MTR12
VQFN32-9
T0825
BGT24MTR12
Data Sheet
7
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Features
Q1
SI CS CLK
Q2
3
/65536
Temp.
Sensor
SPI
TX Power
Sensor
2
AMUX
TX
TXX
PA
/16
ANA
2
FINE
Buffer
MPA
COARSE
IFQ1
LO POWER
SENSOR
IFQX1
90°
LO
Buffer
PPF*
LNA
RFIN1
LNA
RFIN2
0°
IFI1
IFIX1
IFQ2
IFQX2
90°
LO
Buffer
PPF*
0°
IFI2
* Poly Phase Filter
IFIX2
BGT24MTR12_Chip_BID.vsd
Figure 1
Data Sheet
BGT24MTR12 Block Diagram
8
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
TA = -40 °C to 105 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise
specified)1)
Table 1
Absolute Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
-0.3
–
3.6
V
–
DC voltage at RF Pins TX,
TXX, RFIN1, RFIN2
VDCRF
0
–
0
V
MMIC provides short circuit
to GND for all RF pins
DC voltage at Pins IFI1/2,
IFIX1/2, IFQ1/2, IFQX1/2
VDCIF
0
–
Vcc
V
–
DC current into Pins IFI1/2,
IFIX1/2, IFQ1/2, IFQX1/2
IIF
-8.5
–
3.5
mA
max. values indicate
current due to short circuit
to GND and Vcc
respectively
DC voltage at Pin ANA
VDCANA
-0.3
–
3.6
V
–
DC current into Pin ANA (Sink) IANA SINK
125
350
500
µA
max. values indicate
current due to short circuit
to GND and Vcc
respectively
–
–
mA
–
DC current into Pin ANA
(Source)
IANA SOURCE
-7
DC voltage at Pin Q1
VDCQ1
Vcc-0.3 –
Vcc
V
–
DC current into Pin Q1
IQ1
-8
–
12
mA
–
DC voltage at Pin Q2
VDCQ2
-0.3
–
3.6
V
–
-3
–
3
mA
–
DC current into Pin Q2 enabled IQ2EN
DC current into Pin Q2
disabled
IQ2DIS
-10
–
10
µA
–
DC voltage at SPI input Pins
SI, CLK, CS
VDCSPIIN
-0.3
–
3.6
V
–
–
–
3
mA
–
DC current into SPI input Pins ISPIIN
SI, CLK, CS
RF input power into Pins
RFIN1, RFIN2
PRF
–
–
0
dBm
–
DC voltage at Pins Fine,
Coarse
VF, VC
0
–
5
V
–
DC current into Pins FINE,
COARSE
IF, IC
-1
–
0.11
mA
Positive currents if VTUNE >
VCC
1) Not subject to production test, specified by design
Data Sheet
9
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
Table 1
Absolute Maximum Ratings (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Total power dissipation
PDISS
–
–
1050
mW
With BIST deactivated
Junction temperature
TJ
-40
–
150
°C
–
Ambient temperature range
TA
-40
–
105
°C
TA = temperature at
package soldering point
Storage temperature range
TSTG
-40
–
150
°C
–
Attention: Stresses exceeding the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
1)
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
–
40
Unit
Note / Test Condition
K/W
–
Unit
Note / Test Condition
1) For calculation of RthJS please refer to application note thermal resistance
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
ESD robustness, HBM
Symbol
1)
2)
ESD robustness, CDM
Values
Min.
Typ.
Max.
VESD-HBM
-1
–
1
kV
All pins
VESD-CDM
-500
–
500
V
All pins
1) According to ANSI/ESDA/JEDEC JS-001 (R = 1.5kΩ, C = 100pF) for Electrostatic Discharge Sensitivity Testing, Human
Body Model (HBM)-Component Level
2) According to JEDEC JESD22-C101 Field-Induced Charged Device Model (CDM), Test Method for Electrostatic-DischargeWithstand Thresholds of Microelectronic Components
Data Sheet
10
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.4
Measured RF Characteristics
2.4.1
Power Supply
Table 4
Typical Characteristics TA = -40 .. 105 °C, SPI-Bit 4 = low
Symbol
Parameter
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Supply voltage
VCC
3.135
3.3
3.465
V
–
Supply current
ICC
150
210
270
mA
Max. TX output
power, all prescalers are activated,
LO and TX output
buffer in high mode
2.4.2
TX Section
Table 5
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low1)
Parameter
VCO frequency range
VCO fine tuning voltage2)
VCO coarse tuning voltage2)
Symbol
fVCO
VF
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
24.0
–
24.25
GHz
–
3)
–
3.1
V
–
3)
0.5
0.5
–
3.1
V
–
VCO tuning slope FINE
VC
Δ f / Δ VF
–
–
1500
MHz/V
–
VCO tuning slope COARSE
Δ f / Δ VC
–
–
3000
MHz/V
–
VCO temperature drift
Δf / ΔT
-10
-6
0
MHz/K
Min @ T = -40°C
VCO pushing
Δf / ΔVCC
-350
60
350
MHz/V
Absolute values
VCO phase noise
PN
–
-85
-75
dBc/Hz @ 100kHz offset,
VF = VC
TX/TXX load impedance
ZTX
ZTXX
–
20.8-j20.2 –
19.5-j11.7
Ω
Typical value at
24.125GHz and
VSWR ≤ 2:1
Max. TX output power
PTX
6
11
15
dBm
–
TX ouput power adjustable
range
aTX
3
9
–
dB
Adjustable via SPI
–
–
-30
dBm
Parameter based on
IFX eval board
design
TX ouput power in “off” mode4) PTXoff
Q1 Prescaler division ratio
DQ1
–
24
–
–
–
Q1 Prescaler output power
PQ1
-14
-9
-4
dBm
Q1 loaded with 50
Ohm (AC- coupled)
Q1 output impedance4)
ZQ1
–
50
–
Ω
–
Data Sheet
11
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
Table 5
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low1) (cont’d)
Parameter
Symbol
Values
Min.
Typ.
20
Unit
Note /
Test Condition
Max.
Q2 Prescaler division ratio
DQ2
–
2
–
–
–
Q2 Prescaler max. output
voltage
VmaxQ2
2.4
–
–
V
Test condition: Q2
loaded with high
impedance probe (1
MOhm,13 pF)
Q2 Prescaler min. output
voltage
VminQ2
–
–
0.8
V
Test condition: Q2
loaded with high
impedance probe (1
MOhm, 13 pF)
Q2 Prescaler max. output
source current
Imaxsource Q2
1.2
–
–
mA
Test condition: Q2
loaded with 50 Ohm
to Vcc
Q2 Prescaler max. output sink
current
Imaxsink Q2
1.2
–
–
mA
Test condition: Q2
loaded with 50 Ohm
to Vcc
100
–
–
kΩ
–
Q2 Prescaler output resistance RQ2,DIS
in disable mode
1) Performance based on Application Circuit Figure 2 on Page 15, Cross Section of Application Board, Compensation
Structures and Application Board Layout Figure 4 on Page 21ff and Footprint Figure 8 on Page 24
2) At tuning pins chipinternal pull-up of 60kΩ ±20% to VCC; max.- and min. temperature tuning voltage limits are chosen in
a way that they can be linearly interpolated within operating temperature range
3) Min. limit @ 25°C = 0.8V; min. limit @ 105°C = 1.15V
4) Guaranteed by device design
Data Sheet
12
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.4.3
RX Section
Table 6
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low1)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
RFIN frequency range
fRFIN
24.0
–
24.25
GHz
–
RFIN port impedance2)
ZRFIN1
ZRFIN2
–
15.9-j18.4 –
15.7-j18.9
Ω
Typical value at
24.125GHz and
VSWR ≤ 2:1
RFIN VSWR
VSWR
–
–
2:1
–
At source port of off
chip compensation
network as proposed
IF frequency range
fIF
0
–
10
MHz
–
IF output impedance
ZIF
850
1000
1150
Ω
–
Leakage LO to RFIN
LLO=>RFIN
–
–
-30
dBm
LO Signal Power @
RFIN Port, Parameter based on IFX
eval board design
Isolation RFIN1 to RFIN2
IRFIN1-RFIN2
30
–
–
dB
Parameter based on
IFX eval board
design
Voltage conversion gain3)
GC
19
26
31
dB
RLOAD,IF > 10 kΩ
LNA gain reduction
ΔGCLG
3
5
8
dB
–
SSB noise figure
NSSB
–
12
20
dB
Single sideband at
fIF = 100 kHz
IF 1/f corner frequency
fc
–
10
20
kHz
–
Input compression point
IP1dB
-17
-12
–
dBm
–
Input 3rd order intercept point
IIP3
-8
-4
–
dBm
–
Quadrat. phase imbalance
εp
-10
–
10
deg
–
Quadrat. amplitude imbalance
εA
-1
–
1
dB
–
1) Performance based on Application Circuit Figure 2 on Page 15, Cross Section of Application Board, Compensation
Structures and Application Board Layout Figure 4 on Page 21ff and Footprint Figure 8 on Page 24
2) Guaranteed by device design
3) Lowest gain at high temperature, highest gain at low temperature
Data Sheet
13
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.5
Temperature Sensor
Monitoring of the chip temperature is provided by the on-chip temperature sensor which delivers temperatureproportional voltage.
Table 7
Typical Characteristics Temperature Sensor TA = -40 .. 105 °C1)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
-40
–
105
°C
–
Temperature range
TTSENS
Output temperature voltage
VOUT,TEMP –
1.50
–
V
@ 25°C
Sensitivity
STSENS
–
4.5
–
mV/K
–
Overall accuracy error
ErrTSENS
–
–
±15
K
–
1) all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
2.6
Power Detector
For RF power indication, peak voltage detectors are connected to the output of the TX power amplifier and to the
LO medium power amplifier. To eliminate temperature and supply voltage variations, a reference output VREF is
available through the ANA output for the TX and LO power sensor. The compensated detector output voltage is
given by the difference between VOUT and VREF for both power sensors respectively. This voltage is proportional
to the RF voltage swing at the individual amplifier outputs, its characteristic is non-directional.
Table 8
Typical Characteristics Power Detector TA = -40 .. 105 °C, VCC = 3.3 V1)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Power range
PPSENS
-10
–
15
dBm
–
TX power sensor
VOUT,TX VREF,TX
–
550
–
mV
@ PTX = 11 dBm
LO power sensor
VOUT,LO VREF,LO
–
50
–
mV
@ typ. internal PLO
1) all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Data Sheet
14
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Application Circuit and Block Diagram
3.1
Application Circuit Schematic
Q1
ANA
VEE
TXX
TX
VEE
SI
CLK
CS
TEST PIN
2)
3
26
25
24
23
22
21
20
19
18
17
IFIX2
IFI1
29
14
IFI2
IFQ1
30
13
IFQ2
IFQX1
31
12
IFQX2
VEE
32
11
VEE
1
2
3
4
1)
VCC
3)
R1
100Ω
5
1)
C1
1μF
7
8
9
VEE
15
RFIN2
28
VEE
IFIX1
VEE
16
RFIN1
27
VEE
Q2
6
1)
C2
1μF
FINE
TEST PIN
2)
10
C3
1μF
4)
C4
470μF
1)
R2
100Ω
VCC
3)
COARSE
1) RC-time constants to be defined according to modulation requirements.
2) Connect pin 16 to pin 17
3) Galvanic connection of VCC pins on silicon
4) Optional value: according to quality of supply voltage
BGT24MTR12_Appl_BID.vsd
Figure 2
Data Sheet
Application Circuit with Chip Outline (Top View)
15
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BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Table 9
Bill of Materials
Part Number
Part Type
Manufacturer
Size
Comment
C1 ... C4
Chip capacitor
Various
Various
–
R1 ... R2
Chip resistor
Various
0402
–
Data Sheet
16
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.2
Pin Description
Table 10
Pin Definition and Function
Pin No.
Name
Function
1
VCC
Supply voltage
2
VEE
Ground
3
RFIN1
RF input downconverter 1
4
VEE
Ground
5
FINE
VCO fine tuning input
6
COARSE
VCO coarse tuning input
7
VEE
Ground
8
RFIN2
RF input downconverter 2
9
VEE
Ground
10
VCC
Supply voltage
11
VEE
Ground
12
IFQX2
Complementary quadrature phase IF output downconverter 2
13
IFQ2
Quadrature phase IF output downconverter 2
14
IFI2
In phase IF output downconverter 2
15
IFIX2
Complementary in phase IF output downconverter 2
16
TEST PIN
Test pin; DC coupled pin
17
TEST PIN
Test pin; DC coupled pin
18
CS
Chip select input SPI (inverted)
19
CLK
Clock input SPI block
20
SI
Data input SPI block
21
VEE
Ground
22
TX
Transmit output
23
TXX
Complementary transmit output
24
VEE
Ground
25
ANA
Analog output
26
Q1
Prescaler output 1.5GHz
27
Q2
Prescaler output 23kHz
28
IFIX1
Complementary in phase IF output downconverter 1
29
IFI1
In phase IF output downconverter 1
30
IFQ1
Quadrature phase IF output downconverter 1
31
IFQX1
Complementary quadrature phase IF output downconverter 1
32
VEE
Ground
Data Sheet
17
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.3
SPI
1.) Three signals control the serial peripheral interface of the BGT24MTR12:
SI (Data); CLK (Clock); CS (Chip select)
2.) The data bits SI (MSB first) are read in the shift register with falling edge of the CLK signal.
Please make sure, that the data is present at least 10 ns before and at least 10 ns after the falling edge of the
clock signal.
3.) The CLK and CS signals are combined internally.
At least 20 ns before first rising edge of the first CLK signal CS needs to be in "low" state.
While the Data is read, CS has to remain in "low" state.
4.) When Data read in is finished, the shift register content will be written in the latch at the rising edge of the CS
signal. The time between the last falling edge of the CLK signal and the rising edge of the CS must be at least 20
ns.
Table 11
SPI Block Data Bit Description
Data Bit
Name
Description (Logic High)
Power ON State
15
GS
LNA Gain reduction
low
14
–
Not used
low
13
AMUX2
Analog multiplexer control bit 2 high
12
DIS_PA
Disable Power Amplifier
11
Test Bit
Test bit, must be low otherwise low
malfunction
10
Test Bit
Test bit, must be low otherwise low
malfunction
9
Test Bit
Test bit, must be low otherwise low
malfunction
8
AMUX1
Analog multiplexer control bit 1 low
7
AMUX0
Analog multiplexer control bit 0 low
6
DIS_DIV64k
Disable 64k divider
low
5
DIS_DIV16
Disable 16 divider
low
4
PC2_BUF
High LO buffer output power, low
need to be low otherwise
increased current consumption
3
PC1_BUF
High TX buffer output power
low
2
PC2_PA
TX power reduction bit 2
high
1
PC1_PA
TX power reduction bit 1
high
0
PC0_PA
TX power reduction bit 0
high
Data Sheet
18
high
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
BGT24MTR12_SPI.vsd
Figure 3
Timing Diagram of the SPI
Table 12
SPI Timing and Logic Levels
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Serial clock frequency
fSCLK
0
–
50
MHz
Serial clock high time
fSCLK(H)
10
–
–
ns
Serial clock low time
tSCLK(L)
10
–
–
ns
Chip select lead time
tCS(lead)
20
–
–
ns
Chip select lag time
tCS(lag)
20
–
–
ns
Data setup time
tSI(su)
10
–
–
ns
Data hold time
tSI(h)
10
–
–
ns
Low level (SI, CLK, CS)
VIN(L)
0
–
0.8
V
High level (SI, CLK, CS)
VIN(H)
2.0
–
VCC
V
Input capacitance (SI, CLK, CS)
CIN
–
–
2
pF
Input current (SI, CLK, CS)
IIN
-150
–
150
µA
Table 13
Truth Table AMUX
Output signal ANA
AMUX2
AMUX1
AMUX0
VOUT,TX
low
low
low
VREF,TX
low
low
high
VOUT,LO
low
high
low
VREF,LO
low
high
high
VTEMP
high
low
low
Test_Signal1
high
low
high
Data Sheet
19
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Table 13
Truth Table AMUX (cont’d)
Output signal ANA
AMUX2
AMUX1
AMUX0
Test_Signal2
high
high
low
Test_Signal2
high
high
high
Data Sheet
20
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.4
Application Board
Blind-Vias
Vias
Ro4350B, 0.254mm
Copper
35um
FR4, 0.5mm
FR4, 0.25mm
BGT24MTR12_Cross_Section_View.vsd
Figure 4
Cross-Section View of Application Board
Single-Ended RFIN
Differential TX
0.50
1.10
1.15
0.55
0.55
1.65
1.60
0.50
0.30
0.30
All specified values in [mm]
BGT24MTR12_VQFN32-9-CS.vsd
Figure 5
Data Sheet
Detail of Compensation Structure (valid for appl. board mat. Ro4350B, 0.254mm acc. to Fig. 5)
21
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Mid1 and Bottom layer (top
view)
Top layer (top view)
Mid2 layer (top view)
BGT24MTR12_App_Board_Layout.vsd
Figure 6
Application Board Layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCBlayout. The compensation structure is critical for RF performance. Via holes as recommended on one of next
pages (not shown above).
Data Sheet
22
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.5
Equivalent Circuit Diagram of MMIC Interfaces
Pin 5, 6
Pin 3, 8, 22, 23
Pin 12, 13, 14, 15, 28, 29, 30, 31
VCC
RFIN1,
RFIN2, TX,
TXX
VCC
60kΩ
FINE,
COARSE
300Ω
400Ω
IFx
100Ω
VEE
VEE
VEE
Pin 25
Pin 18, 19, 20
Pin 26
VCC
VCC
VCC
50Ω
CS, CLK, SI
54kΩ
ANA
Q1
40Ω
1500Ω
VEE
VEE
VEE
Pin 27
VCC
120Ω
Q2
120Ω
Tolerance of all resistors +/- 20%
VEE
BGT24MTR12_ESB.vsd
Figure 7
Data Sheet
Equivalent Circuit Diagram of MMIC Interfaces
23
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4
Physical Characteristics
4.1
Package Footprint
Copper
4.3
Solder Mask
3.9
Vias
0.85
0.2
3.2
Pastefree
Area
0.3
3.3
2.9
2.2
0.1
1.0
0.7
0.1
0.5
0.2
PIN 1
0.3
0.1
0.15
0.1
All specified values in [mm]
0.15
0.15
BGT24MTR12_VQFN32-9-FP.vsd
Figure 8
Data Sheet
Recommended Footprint and Stencil Layout for the VQFN32-9 Package
24
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4.2
Reflow Profile
Soldering process qualified during qualification with “Preconditioning MSL-3: 30°C. 60%r.h., 192h, according to
JEDEC JSTD20”.
Reflow Profile recommended by Infineon Technologies AG
(based on IPC/JEDEC J-STD-020C)
BGT24MTR12_Reflow_Profile.vsd
Figure 9
Data Sheet
Reflow Profile for BGT24MTR12 (VQFN32-9)
25
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4.3
Package Dimensions
All specified values in [mm]
BGT24MTR12_VQFN32-9-PO.vsd
Figure 10
Package Outline (Top, Side and Bottom View)
BGT24MTR12_VQFN32-9_ML.vsd
Figure 11
Data Sheet
Marking Layout VQFN32-9
26
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
All specified values in [mm]
BGT24MTR12_VQFN32-9_CT.vsd
Figure 12
Data Sheet
Tape of VQFN32-9
27
Revision 3.2, 2014-07-15
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Published by Infineon Technologies AG