January 2009 TLE4906K / TLE4906L High Precision Hall Effect Switch Data Sheet V 2.0 Sensors Edition 2009-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TLE4906K TLE4906L TLE4906K / TLE4906L High Precision Hall Effect Switch Revision History: 2009-01, V 2.0 Previous Version: 1.1 Page Subjects (major changes since last revision) Package type “H” changed to “K” General layout changed We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Data Sheet 1 V 2.0, 2009-01 TLE4906K TLE4906L Table of Contents Table of Contents 1 1.1 1.2 1.3 Product Description 3 Overview 3 Features 3 Target Applications 3 2 2.1 2.2 2.3 2.4 2.5 Functional Description 4 General 4 Pin Configuration (top view) 4 Pin Description 4 Block Diagram 5 Functional Block Description 5 3 3.1 3.2 3.3 Specification 7 Absolute Maximum Ratings 7 Operating Range 8 Electrical and Magnetic Characteristics 9 4 4.1 4.2 4.3 Package Information 11 Package Outline 11 Distance between Chip and Package 13 Package Marking 13 Data Sheet 2 V 2.0, 2009-01 High Precision Hall-Effect Switch 1 Product Description 1.1 Overview TLE4906K TLE4906L The TLE4906 is a high precision Hall effect switch with highly accurate switching thresholds for operating temperatures up to 150°C. 1.2 • • • • • • • • • • • • Features 2.7V to 24V supply voltage Operation from unregulated power supply High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by Active Error Compensation Reverse battery protection (-18V) Superior temperature stability Peak temperatures up to 195°C without damage Low jitter (typ. 1µs) High ESD performance (± 6kV HBM) Digital output signal SMD package SC59 (SOT23 compatible) - (TLE4906K)) Leaded package PG-SSO-3-2 - (TLE4906L) 1.3 Target Applications Target applications for TLE4906 are all automotive applications which require a high precision Hall switch for position sensing with a operating temperature range from -40°C to +150°C. Product Name Product Type Ordering Code Package Hall Effect Switch TLE4906K SP000475028 SC59 Hall Effect Switch TLE4906L SP000012949 PG-SSO-3-2 Data Sheet 3 V 2.0, 2009-01 TLE4906K TLE4906L Functional Description 2 Functional Description 2.1 General The TLE4906K and the TLE4906L are integrated circuit Hall-effect sensors designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. 2.2 Pin Configuration (top view) Center of Sensitive Area 2.08 ± 0.1 3 1.35 ± 0. 1 0.8 1 1.5 ± 0.15 2 ± 0.15 1 2 3 PG-SSO-3-2 SC59 Figure 1 Pin Configuration and Center of Sensitive Area 2.3 Pin Description Table 1 Pin Description SC59 Pin No. Symbol Function 1 VS Supply voltage 2 Q Output 3 GND Ground Table 2 Pin Description PG-SSO-3-2 Pin No. Symbol Function 1 VS Supply voltage 2 GND Ground 3 Q Output Data Sheet Comment Comment 4 V 2.0, 2009-01 TLE4906K TLE4906L Functional Description 2.4 Block Diagram VS Voltage Regulator reverse polarity protected Bias and Compensation Circuits Oscillator and Sequencer Q Ref Amplifier Chopped Hall Probe Low Pass Filter Figure 2 Functional Block Diagram 2.5 Functional Block Description Comparator with Hysteresis GND The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic switching points. . Data Sheet 5 V 2.0, 2009-01 TLE4906K TLE4906L Functional Description B OP Applied Magnetic Field B RP td td tf VQ tr 90% 10% Figure 3 Timing Diagram VQ B 0 Figure 4 Data Sheet Brp Bop Output Signal 6 V 2.0, 2009-01 TLE4906K TLE4906L Specification 3 Specification 3.1 Absolute Maximum Ratings Table 3 Absolute Maximum Rating Parameters Tj = -40°C to 150°C Parameter Symbol Limit Values Unit Min. Max. VS -18 -18 -18 18 24 26 V Supply current through protection device IS -50 50 mA Output voltage VQ -0.7 -0.7 18 26 V Supply voltage Note / Test Condition for 1h, RS ≥ 200Ω for 5min, RS ≥ 200Ω for 5min @ 1.2kΩ pull up Continuous output current IQ -50 50 mA Junction temperature Tj – – – – 155 165 175 195 °C Storage temperature TS -40 150 °C Magnetic flux density B – unlimited mT for 2000h (not additive) for 1000h (not additive) for 168h (not additive) for 3 x 1h (additive) Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 4 ESD Protection1) Parameter Symbol Limit Values Min. ESD Voltage Unit Note / Test Condition kV HBM, R = 1.5kΩ, C = 100pF TA = 25°C Max. VESD ±6 1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Data Sheet 7 V 2.0, 2009-01 TLE4906K TLE4906L Specification 3.2 Operating Range The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4906K / TLE4906L. All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned. Table 5 Operating Conditions Parameters Parameter Symbol Values Min. Typ. Unit Max. Supply voltage VS 2.7 18 V Output voltage VQ -0.7 18 V Junction temperature Tj -40 150 °C IQ 0 20 mA Output current Data Sheet 8 Note / Test Condition V 2.0, 2009-01 TLE4906K TLE4906L Specification 3.3 Electrical and Magnetic Characteristics Product characteristics involve the spread of values guaranteed within the specified voltage and ambient temperature range. Typical characteristics are the median of the production. General Electrical Characteristics1) Table 6 Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply current IS 2 4 6 mA VS = 2.7V ... 18V Reverse current ISR 0 0.2 1 mA VS = -18V Output saturation voltage VQSAT - 0.3 0.6 V IQ = 20mA Output leakage current IQLEAK - 0.05 10 µA for VQ = 18V Output fall time tf - 0.02 1 µs Output rise time tr - 0.4 1 µs RL = 1.2kΩ; CL = 50pF see Figure 3 Chopper frequency fOSC - 320 - Switching frequency Delay time 3) 4) Output jitter Power-on time5) 6) Thermal resistance kHz 2) fSW 0 - 15 kHz td - 13 - µs tQJ - 1 - µsRMS typical value for square wave signal with 1kHz tPON - 13 - µs - 100 - K/W - 190 RthJA - VS ≥ 2.7V SC59 PG-SSO-3-2 1) over operating range, unless otherwise specified. Typical values correspond to VS = 12V and TA = 25°C 2) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher than for static fields. This is due to the -3dB corner frequency of the low pass filter in the signal path. 3) Systematic delay between magnetic threshold reached and output switching. 4) Jitter is the unpredictable deviation of the output switching delay. 5) Time from applying VS ≥ 2.7V to the sensor until the output state is valid. 6) Thermal resistance from junction to ambient. Calculation of the ambient temperature (SC59 example) e.g. for VS = 12.0V, IStyp = 4mA, VQSATtyp = 0.3V and IQ = 20mA Power dissipation PDIS = 54.0mW In TA = Tj - (RthJA x PDIS) = 175°C - (100K/W x 0.054W) Resulting max. ambient temperature: TA = 169.6°C Data Sheet 9 V 2.0, 2009-01 TLE4906K TLE4906L Specification Table 7 Magnetic Characteristics1) Parameter Symbol Tj[°C] Values Unit Min. Typ. Max. Operating point BOP -40 25 150 6.7 6.5 6.2 10.3 10.0 9.5 13.9 13.5 12.9 mT Release point BRP -40 25 150 5.2 5.0 4.7 8.7 8.5 8.1 12.3 12.0 11.4 mT Hysteresis BHYS -40 25 150 0.7 - 1.5 - 3.0 - mT Temperature compensation of magnetic thresholds TC - -350 - ppm/°C Repeatability of magnetic thresholds2) BREP - 20 - µTRMS Note / Test Condition typ. value for ∆B/∆t > 12mT/ms 1) over operating range, unless otherwise specified. Typical values correspond to VS = 12V and TA = 25°C. 2) BREP is equivalent to the noise constant Note: Typical characteristics specify mean values expected over the production spread Field Direction Definition Positive magnetic fields are defined with the south pole of the magnet to the branded side of package. N N S S Branded Side Figure 5 Data Sheet Branded Side Definition of magnetic field direction (left: SC59, right: PG-SSO-3-2) 10 V 2.0, 2009-01 TLE4906K TLE4906L Package Information 4 Package Information 4.1 Package Outline 1.1 ±0.1 3 ±0.1 0.2 +0.1 1.6 +0.15 -0.3 2.8 +0.2 -0.1 0.45 ±0.15 0.1 M 3 1 0.15 MAX. 0.1 3x0.4 +0.05 -0.1 2 +0.1 0.15 -0. 05 0.1 M 0.95 0.95 (0.55) 0˚...8˚ MAX. GPS09473 Figure 6 SC59 Package Outline (all dimensions in mm) The following picture shows a recommendation for the PCB layout. 0.8 1.4 min 0.9 1.6 1.3 0.9 1.4 min 0.8 1.2 0.8 1.2 0.8 Figure 7 Data Sheet Wave Soldering Reflow Soldering SC59 Footprint (SOT23 compatible, all dimensions in mm) 11 V 2.0, 2009-01 TLE4906K TLE4906L Package Information 0.8 ±0.1 x 45° 7° 0.2 1 MAX. 1) 7° 0.35 ±0.1 x 45° 3 ±0.06 1.9 MAX. 2 A 1.52±0.05 3.29 ±0.08 4.06±0.08 (0.25) 0.15 MAX. 4.16±0.05 (0.79) 0.6 MAX. 0.2 +0.1 0.4 ±0.05 1.27±0.25 1 2 3 1.27±0.25 18 ±0.5 6 ±0.5 1-1 38 MAX. 9 +0.75 -0.5 23.8 ±0.5 12.7 ±1 A Adhes iv e Tape Tape 6.35±0.4 4 ±0.3 0.39 ±0.1 12.7±0.3 1) N o s older func tion area Figure 8 Data Sheet 0.25-0.15 Total toleranc e at 10 pitc hes ±1 GP O05358 PG-SSO-3-2 Package Outline (All dimensions in mm) 12 V 2.0, 2009-01 TLE4906K TLE4906L Package Information 4.2 Distance between Chip and Package d Branded Side Hall-Probe d : Distance chip to upper side of IC PG-SSO-3-2 : 0.57 ±0.08 mm AEA02510-1 Figure 9 Distance between chip and package PG-SSO-3-2 d Branded Side d: Distance chip to upper side of IC SC59: 0.56 ±0.1 mm AEA03244 Distance between chip and package SC59 4.3 Package Marking 06 ym Figure 10 Year (y) = 0...9 Month (m) = 1...9, O - October N - November D - December AEA03641 Figure 11 Data Sheet Marking of TLE4906K 13 V 2.0, 2009-01 TLE4906K TLE4906L Figure 12 Data Sheet Year (y) = 0...9 Calendar Week (ww) = 01...52 06L yww S Package Information Marking of TLE4906L 14 V 2.0, 2009-01 www.infineon.com Published by Infineon Technologies AG