Application Guide for Protection

Edition 2011-12-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
RF and Protection Devices
Application Guide
Infineon Technologies
A Leading Company in RF and Protection Devices
Infineon Technologies focuses on the three central challenges facing modern society: Energy Efficiency,
Mobility and Security and offers semiconductors and system solutions for industrial/consumer electronics,
automotive electronics, chip card and security applications.
Infineon’s products have a reputation for leading-edge innovation, high reliability, and exceptional quality
performance in RF, protection, analog, mixed signal, embedded control, and the highest efficiency power
solutions.
With its technologies and design expertise, Infineon is the market leader in its focus segments. Infineon has
more than 30 years of experience in developing RF products for numerous applications and always leads in the
market with high performance, yet cost effective products. You can visit our website www.infineon.com to learn
more about the broad product portfolio of Infineon Technologies.
The Infineon business unit - RF and Protection Devices (RPD) - has evolved over the years from a supplier of
standard RF discrete components like transistors and diodes to a more advanced portfolio of state-of-the-art,
innovative and differentiated products including application specific MMICs, Silicon Microphones and ESD
protection components. Please visit our website www.infineon.com/rfandprotectiondevices to learn more about
Infineon’s latest RF and Protection products for your applications.
Infineon’s application guide consisting of four different brochures is an easy-to-use tool primarily meant for
engineers to efficiently guide them to the right device for their system. This application guide is updated
frequently to include latest applications and trends. Each brochure focuses on a market segment that we
support:
1. Application Guide for Mobile Communication: www.infineon.com/rpd_appguide_mobile
2. Application Guide for Consumer Applications: www.infineon.com/rpd_appguide_consumer
3. Application Guide for Industrial Applications:
www.infineon.com/rpd_appguide_industrial
4. Application Guide for Protection:
www.infineon.com/rpd_appguide_protection
Our application experts worldwide are always ready to support you in designing your systems with our devices.
Please contact Infineon’s Regional Offices or one of Infineon Worldwide Distribution Partners in your area to get
all the support you might need.
Kind Regards
Dr. Heinrich Heiss
Dipl.-Ing. Alexander Glas
Director Technical Marketing
& Application Engineering RPD
Group Leader Technical Marketing
& Application Engineering, Protection, RPD
3
RF and Protection Devices
Application Guide for Protection
INDEX
Infi neo n T e chn olo gi e s ................................................................................................................................... 3
1
Infineon’s ESD and ESD/EMI Protection Devices ........................................................................... 5
2
2.1
2.2
ESD Protection is the Key Success Factor for Reliable Products ................................................ 8
Device Level ESD and System Level ESD – Two Sides of a Coin ...................................................... 8
General Design Rules to Minimize Residual ESD Stress .................................................................. 10
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
High Speed Data Interface Protection ............................................................................................ 11
ESD Protection for USB 3.0 ............................................................................................................... 14
ESD Protection for USB 2.0 ............................................................................................................... 15
ESD Protection for Dual Port USB 2.0 ............................................................................................... 16
Serial ATA, e-SATA Generation 1 (1.5 Gbit/s), 2 (3 Gbit/s), 3 (6 Gbit/s) ........................................... 17
ESD Protection for HDMI 1.3a & 1.4 .................................................................................................. 18
ESD Protection for DisplayPort & DVI & MHL ................................................................................... 19
ESD Protection for High-Speed Digital Interface Switching ............................................................... 20
ESD and Transient Protection for VDSL, ADSL & Other Broadband Applications ............................ 22
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
General Purpose Interface Protection ........................................................................................... 23
ESD Protection for Low Data Rate Interfaces .................................................................................... 24
ESD Protection for Dual Channel General Purpose e.g. AV I/F Interfaces ....................................... 25
ESD Protection for Near Field Communication (NFC) ....................................................................... 26
Reverse Polarity Protection (RPP) Circuit ......................................................................................... 27
Reverse Polarity Protection for USB Charger .................................................................................... 28
Rectifier Circuit with Schottky Diodes ................................................................................................ 29
Clipping and Clamping ....................................................................................................................... 30
5
5.1
5.2
5.3
ESD / Surge Protection .................................................................................................................... 31
ESD Requirements:............................................................................................................................ 32
Surge Requirements: ......................................................................................................................... 32
ESD Surge Protection for Gigabit Ethernet ........................................................................................ 35
6
6.1
6.2
6.3
6.4
6.5
6.6
6.7
Interface Protection with Integrated ESD/EMI Devices ................................................................ 36
ESD/EMI Protection for Differential Mode Microphone Interface – BGF113 ..................................... 38
ESD/EMI Protection for SIM Card Interface – BGF106c ................................................................... 39
ESD/EMI Protection for 6-Pin SIM Card Interface – BGF125 ............................................................ 40
ESD/EMI Protection for 8-Pin SIM Card Interface – BGF124 ............................................................ 41
ESD/EMI Protection for Flash Memory: MicroSD/MiniSD/SD Card – BGF117 ................................. 42
ESD/EMI Protection for High-Speed MMC-Card (4 data lines) – BGF104c ...................................... 43
ESD/EMI Protection for LCD/Camera Interface - BGF108c / BGF109c ............................................ 44
Abbreviations ....................................................................................................................................................... 45
Alphanumerical List of Symbols ........................................................................................................................ 46
Package Information ........................................................................................................................................... 47
Support Material .................................................................................................................................................. 48
4
RF and Protection Devices
Application Guide for Protection
1
Infineon’s ESD and ESD/EMI Protection Devices
In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better
applications. The race to pack even more high-speed functions into a smaller space accelerates miniaturization
roadmaps. However, the downscale of semiconductor chips together with the increase of doping levels results
in a dramatic reduction of the thin gate oxide layer and the width of the pn-junction in semiconductor chips. In
combination with greater circuit population, this increases the susceptibility of the semiconductor chip to ESD.
Subsequent failures of the electronic equipment can be noticed immediately as hard failures or temporary
equipment malfunction, or in latent damage that is not recognized until later in the equipment lifecycle. Hard
failures are the easiest to recognize, and in general require the failed device to be replaced. In the best case,
any failure will be detected before the equipment leaves the factory and customers will never receive it. Failures
leading to temporary malfunction of equipment or latent failures are quite common and very difficult to detect or
trace. Temporary malfunctions may go unreported by customers all-the-while resulting in negative customer
impressions as the user repeatedly restarts or resets the equipment. Latent damage that eventually leads to
hard failure or unreliable operation of the equipment while in the field may cause the most negative impression
and lower customer confidence in the company that provided it. Product recalls requiring swapping or repairing
equipment due to ESD failures can cost the manufacturer and/or the user several times more than the original
equipment cost.
Figure 1
Integrated circuit before ESD strike
Integrated circuit after ESD strike
An efficient system design normally includes the implementation of a shielded chassis in order to minimize the
risk of ESD damage. Nevertheless, ESD strikes represent a permanent threat to device reliability as they can
easily find a way to bypass the shielded chassis and be injected into the vulnerable ICs and ASICs. All
connectors and antennas exposed to the outside world are possible entry points for ESD generated by end
users or even self-generated ESD from moving equipment components. The relentless decrease in IC and
ASIC geometries has reached a point where adequate ESD protection structures incorporated on the device’s
substrate is no longer feasible. Now, the only way to ensure stable operation and to maximize reliability is to
protect the equipment against ESD and transients with external protection devices.
5
RF and Protection Devices
Application Guide for Protection
The most effective and economical system level protection is accomplished when the requirements are
considered early in the design cycle. ESD has become a pervasive normal operating condition that requires
diligent consideration. Let’s explore this topic further.
Infineon’s Value Proposition
Infineon’s protection solutions improve ESD immunity at the system level beyond the requirements of the IEC
61000-4-2 level-4 standard with:

Superior multi-strike absorption capability;

Safe and stable clamping voltages to protect even the most sensitive electronic equipment;

Protection devices that fully comply with high-speed signal quality requirements;

Easy-to-use single devices in leading miniaturized packages for space-constrained applications;

Array solutions for board space savings and reduced parts count;

Flow through package pin outs enabling easier PCB layout with minimized crosstalk and parasitic
influences on the signal quality.

Extremely low leakage currents to extend battery life further;
For further information about our ESD diode portfolio and their applications, please refer to our ESD Protection
Brochure www.infineon.com/tvs.brochure. You can also visit our webpage for protection devices:
www.infineon.com/protection.
Furthermore, Infineon offers various high performance types of discrete ESD protection devices for mobile
phone applications to protect our customers’ mobile phones from ESD attacks. Following is a short overview of
the available ESD protection devices for various interfaces used in mobile phones.
6
RF and Protection Devices
Application Guide for Protection
Analog/Digital Interfaces
RF Interfaces
ESD5V3S1B
ESD5V3L1B
ESD8V0-series
NFC
ESD18VU1B
ESD24VL1B
TV/Audio
LCD
ESD5V3U-series
ESD5V3L1B-series
USB1.1/2.0
ESD5V3U-series
USB3.0
ESD3V3U4ULC
Camera
ESD5V3U-series
ESD5V3L1B-series
ESD5V3U4U-HDMI
ESD5V3U-series
ESD5V3L1B-series
SD Card
MM Card
I/O Data
ESD8V0-series
ESD5V3S1B-series
ESD5V3L1B-series
HDMI
ESD5V3U4U-HDMI
ESD5V3U-series
Human
Interfaces
ESD8V0-series
ESD5V3L1B-series
ESD5V3L1U-02LRH
SWP
ESD3V3XU1US
Keypad
Figure 2
ESD0P2RF
ESD0P1RF
Mobile TV
ESD0P2RF
ESD0P1RF
FM
ESD0P2RF
ESD0P1RF
RPP Diode
Power Supply
USB Charger
Overview of Infineon’s ESD Diodes for Interface Protection
Headset
Figure 3
e.g. mobile/
wireless/
portable devices,
consumer
& industrial units
GPS
BGF100/BGF200
BGF113
AV I/F
BGF112
TV
BGF111
LCD
BGF108c/BGF109c
SIM Card
BGF106c
BGF124/BGF125
µSD/SD
Card
BGF117
HSMM Card
BGF104
Charger
BGF119
HDMI
BGF127/BGF128
Analog
Baseband IC
SIM Card
Electronic
Equipment
ESD0P2RF
ESD0P1RF
WLAN
Digital Baseband IC
Headset
Overview of Infineon’s Integrated ESD/EMI Devices for Interface Protection
7
RF and Protection Devices
Application Guide for Protection
2
ESD Protection is the Key Success Factor for Reliable Products
2.1
Device Level ESD and System Level ESD – Two Sides of a Coin
System level ESD protection is defined by the IEC 61000-4-2 standard. In general, all ICs and ASICs
incorporate some level of ESD protection to see the device through the manufacturing process undamaged. The
integrated protection is normally designed according to the HBM (Human Body Model) specification. ESD
robustness, according to the HBM, is only sufficient for safe device handling and system assembly which takes
place in a production environment where ESD is highly controlled and minimized. Once out in the real world, the
equipment will face the threat of ESD strikes happening everywhere, at any time. In order for the equipment to
survive beyond the factory environment, IEC 61000-4-2 system level ESD protection is required. The final
system level protection solution is achieved through consideration of the systems native integrated protection in
combination with a carefully selected external protection device so that all facets of the final protection solution
meet the protection requirements of the application.
The current industrial HBM robustness standard applied to semiconductor device level protection is 2 kV. In
general, and with few exceptions, 2 kV HBM protection in current semiconductor devices is the highest
protection level. Few have higher protection and more and more are being produced with lower protection, even
down in the range of 250V to 350V. The 2 kV IEC 61000-4-2 defined system level ESD strike delivers 750%
higher energy to the Device Under Test (DUT) than the 2 kV HBM strike. However, the days are gone where the
2 kV system level ESD robustness was sufficient or the standard. The new requirement for system level
robustness is generally 8 kV, a 12,000% increase over the 2 kV HBM standard. There are many indications that
the future robustness standard for system level protection will reach 15 kV, which serves up a 41000% higher
destructive energy burst to the DUT than the 2 kV HBM strike.
Residual ESD stress vs. ESD model
100
10
10
1
IEC_8kV
IEC_2kV
IEC_1kV
1000
100
diss_load
Reference
1000
P
0ns
factor 410
HBM_1kV
Logarithmic scaling !!!
10000 10000
factor 120
IEC_15kV
400ns
Ediss_load 
HBM_2kV
Dissipated ESD Energy [nJ/Ohm]
100000 100000
E_HBM_1kV
E_HBM_1kV
E_HBM_2kV
E_HBM_2kV
E_IEC_1kV
E_IEC_1kV
E_IEC_2kV
E_IEC_2kV
E_IEC_8kV
E_IEC_8kV
E_IEC_15kV
E_IEC_15kV
factor 7.5
1
Figure 4
Residual ESD stress versus ESD model
8
RF and Protection Devices
Application Guide for Protection
The physical background causing electrostatic charging is the triboelectric effect or triboelectric charging, where
electrical charge-carriers are separated from some materials after coming into contact with another different
material. This separation of charge-carriers takes place in our daily experience. Just the process of sitting down
and standing up from a chair can cause a 15 kV electrostatic voltage in the human body. Walking over a carpet
can easily double the 15 kV static charge to 30 kV. During winter time, when the air has lower humidity, the
problem of static discharge is further amplified in magnitude and frequency of occurrence.
ESD Protection – An Application Tailored Business
Each application has its own set of requirements for robustness, signal integrity, board area and price point.
With Infineon’s portfolio of leading-edge ESD protection devices, the right ESD protection solution can be
tailored for any application’s requirements. We continue with some general rules to minimize the residual stress
of an ESD strike on the PCB and its components.
9
RF and Protection Devices
Application Guide for Protection
2.2
General Design Rules to Minimize Residual ESD Stress
For maximum system level ESD protection, several basic considerations should be kept in mind beginning with
the overall system concept; from the industrial design to the PCB layout. The industrial design should be the first
point of consideration. Where possible, the equipment housing should incorporate metal shielding around
exposed connectors and HID interfaces to prevent ESD strikes from traveling deeper into the system.
The PCB layout has a significant impact on the overall system level ESD performance of a system and is the
next point of consideration.

First, protection devices should be placed as near as possible to points of ESD entry such as
connectors and exposed antennas or other identified points of entry.

Second, spacing between traces where external signals originate and internal signal traces needs to be
maximized to prevent high voltage ESD strikes from hopping from the external trace to internal traces
where there is little protection offered to the semiconductors they feed.

Third, any series inductance in-line with the ESD diode should be avoided. Series inductance can be
caused by nearby PCB traces and GND via holes.
Even inductances of less than 1 nH visibly impact the residual peak overshoot voltage. This peak voltage only
lasts a few nano-seconds, but when extended by parasitic series inductance, it can cause huge damage to
critically sensitive components such as GaAs devices in RF stages or high speed data circuits. In high speed
stages, which typically have very low input capacitance, the residual overshoot, caused by the addition of series
inductance, enters the device input un-smoothed with destructive consequences.
ESD strike
Figure 5
PCB-Line
Induced
voltage
dITVS/dt
Dynamic TVS Diode
clamping voltage
TVS current
Rdyn
Bond wire
TVS diode
PCB-Line
Residual ESD current
PCB
inductance
Main ESD current
PCB Layout with parasitic Inductance in series with the ESD Diode
10
RF and Protection Devices
Application Guide for Protection
A simple example demonstrates the level of the inductive component of the residual peak clamping voltage: A
15 kV contact discharge strike (IEC 61000-4-2) generates a peak current of ~55 A. Assuming a parasitic
inductance of 1 nH and a 0.85 ns rise-time of the ESD strike (defined as 10% / 90% in IEC61000-4-2) the
inductive overshoot is in the range of 50 V, possibly higher.
It is possible to significantly reduce parasitic series inductance using a “V” shaped layout to connect the ESD
diode direct to the signal line. The GND via hole should be placed as near to the ESD diode solder pad as
permitted by the PCB design rules.
ESD strike
TVS current
Dynamic TVS Diode
clamping voltage
Bond wire
PCB-Line
Induced
voltage
dITVS/dt
Rdyn
TVS diode
PCB-Line
Figure 6
Residual ESD current
PCB-Lines
Main ESD current
Optimized “V” Shaped Routing to Reduce Parasitic Series Inductance
The length of the “V” shaped PCB lines becomes uncritical because they are not in series with the ESD diode
any more. The PCB inductance is substituted by the serial “V” shaped PCB lines. Induced voltage is limited to
the bond wire only.
3
High Speed Data Interface Protection
High speed data interfaces such as FireWire, MIPI, SATA, DVI, DisplayPort, HDMI 1.3/1.4a, USB 2.0/3.0 and in
future Thunderbolt are widely used in today’s consumer electronics. These interfaces are normally exposed to
ESD during routine use. As data transmission speed continues to increase, e.g. maximum 3.4 Gbit/s per
differential line-pair for HDMI and 5 Gbit/s for USB 3.0 SuperSpeed, the transmitter and receiver designs are
shrunk to smaller geometries to support the growing data rate. This however causes ICs to be more sensitive to
high current and high-energy ESD threats.
According to the IEC 61000-4-2, level-4, an 8 kV ESD event will have a peak discharge current up to 30 A which
ICs cannot withstand. To handle this large discharge current, external ESD protection devices are required on
high speed data interfaces. However, the parasitic capacitance associated with external ESD protection devices
can cause impedance mismatch and negatively impact signal integrity causing an increase in the BER (Bit Error
Rate). The impact is more significant in proportion with the speed of the data link.
11
RF and Protection Devices
Application Guide for Protection
To achieve effective protection, both ESD robustness and low parasitic capacitance are required for high speed
interfaces. Infineon Technologies offers a silicon based ESD diode portfolio with single-line and multiple-line
array solutions with the ability to absorb more damaging ESD energy well above the 8kV industrial standard
while maintaining signal integrity for optimum performance.
A key factor in the ability to absorb damaging ESD energy is the dynamic resistance of the protection device
after turn-on. Normally, lowering the dynamic resistance of a device creates higher parasitic capacitance
because the die size is increased to reduce the device’s on resistance. This trade-off between resistance and
capacitance is easily observed by comparing ESD diode data sheets, if the supplier provides the dynamic
resistance of its devices. Infineon’s unique leading-edge protection technology provides the best trade-off
between a device’s ability to absorb large amounts of ESD energy with the least impact on signal integrity.
Infineon’s ultra-low capacitance ESD diodes provide very low dynamic resistance under high ESD stress. This
low resistance steers the damaging ESD pulse away from the high-speed data interface IC and into the
protection diode effectively clamping the ESD voltage pulse on the IC at a very low level and avoiding damage
to the IC. The rule is that the lower the dynamic resistance, the lower the clamping voltage on the IC being
protected.
The best means for accurately measuring the dynamic resistance of a protection device is the Transmission
Line Pulse method or TLP for short. The complete TLP process is documented in AN210. As an example, the
dynamic resistance of the ESD diode ESD3V3U4ULC has been extracted by TLP measurement to be only 0.19
Ohms as shown in the following IV trace. More examples with protection technology comparisons can be found
in AN210.
Figure 7
TLP measurement of ESD3V3U4ULC from I/O to GND
12
RF and Protection Devices
Application Guide for Protection
Signal integrity is the key factor in achieving low bit error rate (BER) in high-speed data transmission. The
measures of signal integrity are easily visualized with an eye diagram. Any time parasitic capacitance is
introduced into a high-speed data path, the signal integrity of the path is lessened. In order to have minimal
impact on signal integrity, Infineon ESD diodes are designed with ultra-low parasitic capacitance, typically only
0.4 pF (diode vs. GND).
To judge the effect of Infineon ESD diodes in a USB3.0 SuperSpeed link, a complete system simulation with
ESD3v3U4ULC on the host and client side includingdata cable loss was performed. The following eye diagram
simulation results compares the receive eye pattern openings without ESD diodes (red contour) and with the
protection of ESD diodes (blue contour). The ultra-low capacitance of the Infineon ESD diode causes only a
negligible degradation in the eye–contour statistics while keeping a huge safety margin with respect to the USB
3.0 specification mask.
USB3.0 SS eye-pattern Spec. Mask (BER 10E-12)
USB3.0 SS eye-contour
statistic of 10E12 bits
- without TVS diode -
USB3.0 SS eye-contour
statistic of 10E12 bits
- with TVS diode -
Inner eye opening
statistic of ~10E6 bits
Figure 8
Eye diagram w. and w/o. ESD3V3U4ULC located at host and device sides
Infineon’s growing portfolio of ESD diodes are offered in the world’s smallest packages and in arrays with flowthrough design to enable protection of high speed data interfaces in the most space constrained applications
with the least impact on signal integrity. Differential pairs in high-speed data links must be impedance matched
with identical delays in each signal path, and crosstalk with other signal paths must be avoided. These
conditions are easily met using Infineon protection arrays in flow-through packages. The differential data pairs
flow into one side of the package and out the other side of the package so that delays in each path remain the
same while keeping adjacent signal crosstalk due to complex PCB layout maneuvers to a minimum.
13
RF and Protection Devices
Application Guide for Protection
ESD Protection for USB 3.0
TX+
SuperSpeed
Data IN
TX+
TX-
connector
USB3.0: SS-Hub
e.g. PC
+ RX+
RX-
USB3.0: SS-Device
e.g. storage
RX+
TX+
RX-
ESD diodes
USB2.0 HUB
HS/FS/LS
TX+
D+
SuperSpeed
Data IN
+
-
TXRX-
SuperSpeed
Data OUT
+
-
TX-
USB3.0 cable
SuperSpeed Link
RX+
SuperSpeed
Data OUT
USB2.0 Device
HS/FS/LS
D+
+
-
USB2.0
Data OUT
+
RX
D-
TX-
USB2.0
Data OUT
RX+
RX-
TX-
USB2.0
Data IN
TX+
+
-
connector
3.1
mated
connector
+
RX
-
D-
USB3.0 cable
USB2.0 Link
mated
connector
TX+
USB2.0
Data IN
+
-
TX-
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
+3.3
±15
8@16
11@30
0.2
3
8.5
0.35
4
TSLP-9-1
+3.3
±20
8@16
11@30
0.2
3
8.5
0.35
1
TSSLP-2-1
ESD3V3U4ULC
ESD3V3XU1U
high speed
SuperSpeed
high speed
SuperSpeed
ESD5V5U5ULC
USB2.0-HS,
Vcc
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
5
SC74
ESD5V3L1B
USB2.0-FS,
Vcc
+5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
14
RF and Protection Devices
Application Guide for Protection
3.2
ESD Protection for USB 2.0
Host
controller
Device
controller
ESD
diodes
GND
D+
D1+
Data
IN / OUT
D+
D1+
Data #1
IN / OUT
D1-
D1D-
DVcc
USB2.0 cable
USB2.0 Host1
LS/FS/HS
USB2.0 Device1
LS/FS/HS
USB
Connectors
Vcc
Vcc
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U1U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V3L1B
USB2.0-FS,
Vcc
+5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
15
RF and Protection Devices
Application Guide for Protection
3.3
ESD Protection for Dual Port USB 2.0
Host
controller
Device
controller
ESD
diodes array
GND
D+
D1+
Data #1
IN / OUT
D+
D1+
Data #1
IN / OUT
D1-
D1D-
USB2.0
Connector
Vcc
USB2.0 Host2
LS/FS/HS
DVcc
USB2.0
Cable#1
USB2.0 Device1
LS/FS/HS
Vcc
USB2.0
Connector
USB2.0 Host1
LS/FS/HS
USB2.0 Device2
LS/FS/HS
USB2.0
Cable#2
Vcc
DD-
D2-
D2-
Data #2
IN / OUT
D2+
D+
Data #2
IN / OUT
D2+
D+
GND
ESD
diodes array
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U1U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V5U5ULC
USB2.0-HS,
Vcc
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
USB2.0-FS,
Vcc
+5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
Vcc
D1+ D1-
D1+ D1-
D2+ D2-
D2+ D2-
Flow through layout proposal for ESD5V5U5ULC in SC74. “V-shape” routing implemented for the Vcc line
16
RF and Protection Devices
Application Guide for Protection
Serial ATA, e-SATA Generation 1 (1.5 Gbit/s), 2 (3 Gbit/s), 3 (6 Gbit/s)
TX+
Data IN
3Gb/s, 6Gb/s
A+
A+
RXA-
connector
TXSerial ATA Hub
e.g. PC
+ RX+
RX-
Data OUT
3Gb/s, 6Gb/s
+
-
A-
(e)Serial ATA cable
B+
Data OUT
3Gb/s, 6Gb/s
RX+
+
-
connector
3.4
Serial ATA-Device
e.g. storage
B+
TX+
+
-
TXB-
Data IN
3Gb/s, 6Gb/s
B-
ESD diodes
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD0P2RF
high speed
bidirectional
±5.3
±20
29@16
38@30
1
3
16
0.23
1
TSLP-2-7
TSSLP-2-1
ESD3V3XU1B
on request
high speed
bidirectional
±3.3
±20
15@16
23@30
0.4
3
-
0.2
1
TSLP-2-7
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
17
RF and Protection Devices
Application Guide for Protection
3.5
ESD Protection for HDMI 1.3a & 1.4
+5V
HDMI Type A
Connector
HDMI Source/Sink
1
TMDS Data2
2
3
High-Speed
ESD protection
4
5
TMDS Data1
6
TMDS Channels
7
8
TMDS Data0
9
High-Speed
ESD protection
10
11
TMDS Clock
12
CEC
SCL
ESD protection
communication
channel
(Low-Speed)
SDA
13
CEC Line
14
N.C.
15
16
Hot Plug Detect
ESD protection
supply Voltage Vcc
DDC (I²C Bus)
17
DDC/CEC GND
18
+5V
19
Hot Plug Detect
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD3V3U4ULC
high speed
+3.3
±15
0.2
3
8.5
0.35
4
TSLP-9-1
ESD3V3XU1U
high speed
+3.3
±15
0.2
3
8.5
0.35
1
TSSLP-2-1
ESD5V5U5ULC
high speed
<2.0Gbps
+5.5
±25
8@16
11@30
8@16
11@30
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
Control lines
Vcc
+5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
11
skinny trace „L2"
Clock-
width_ST
TMDS
clock
Clock shield
10
Clock+
9
Data 0-
8
Data shield 0
7
Data 0+
100 Ohm differential lines
gap_ST
4
TMDS 1
Data shield 1
Data 1+
gap_diff100
100 Ohm differential lines
GND_via
Data 2-
2
Data shield 2
1
Data 2+
TMDS 2
100 Ohm differential lines
Keep the „gap_(lane vs. lane)“ high to minimize adjacent lane x-talk
HDMI flow through layout recommendation for the TSLP-9-1
18
100 Ohm
3
Data 1-
adjacent lane seperation
to control alien x-talk
100 Ohm
5
TMDS 0
width_diff100
Infineon ESD Diode
6
100 Ohm differential lines
100 Ohm
W_pad=0.25 mm
Pitch: 0.5mm
skinny trace „L1"
12
100 Ohm
HDMI Receptacle type „A“ landing pads
Notes:
RF and Protection Devices
Application Guide for Protection
3.6
ESD Protection for DisplayPort & DVI & MHL
+3.3V
DisplayPort
Connector
Display Port
Source/(Sink)
1
ML_Lane 0/(3)
2
3
High-Speed
ESD protection
4
5
6
ML_Lane 1/(2)
ML_Lanes 0...3
TMDS Channels
7
8
ML_Lane 2/(1)
9
High-Speed
ESD protection
10
11
ML_Lane 3/(0)
12
Config1
13
Config1
Config2
14
Config2
AUX_pos
Communication
channel
(Low-Speed)
ESD protection
AUX_neg
Hot Plug Detect
ESD protection
supply Voltage Vcc
15
AUX_pos
16
GND
17
AUX_neg
18
Hot Plug Detect
19
Return DP_PWR
20
Power +3.3V
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
Vcc
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD3V3U4ULC
high speed
+3.3
±15
0.2
3
8.5
0.35
4
TSLP-9-1
ESD3V3XU1U
high speed
+3.3
±15
0.2
3
8.5
0.35
1
TSSLP-2-1
ESD5V5U5ULC
high speed
<2.0Gbps
+5.5
±25
8@16
11@30
8@16
11@30
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
Control lines
Vcc
+5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
19
RF and Protection Devices
Application Guide for Protection
3.7
ESD Protection for High-Speed Digital Interface Switching
With increasing numbers of interfaces to the external world in mobile phones, the space constraint is becoming
a tougher obstacle to overcome with each new generation. Port sharing for various functions has become
mandatory in order to reduce the number of interface connectors. The following block diagram shows an
example of port sharing between USB and the new Mobile High-definition Link (MHL). The combination is
realized through a common Micro USB AB port together with a DPDT switch.
Infineon offers a variety of solutions and package options for the implementation of SPDT and DPDT switches
for high-speed digital interface switching in mobile phones. For the shared USB/MHL port application, the
highest integration level and the lowest power consumption solution is achieved with the DPDT BGS22W
device. Additional information on this device is available on request from your local Infineon representative. The
SPDT BGS12A and its derivatives can also be used in the application as an integrated option. For discrete
implementation, the BAR90 pin diode is available in several package options.
The previously shown
ESD5V3U1U is an excellent option for the protection of the switching function on the Micro USB AB connector
port.
For
more
detailed
information,
please
visit
our
website:
www.infineon.com/rfswitches
or
www.infineon.com/pindiodes. You can also contact Infineon’s Regional Offices or one of Infineon Worldwide
USB
PHY
USB +
USB DPDT
Switch
MHL +
MHL/USB
MHL -
MHL
PHY
MICRO USB AB
Distribution Partners in your area to get direct design-in support you might need.
RF PIN Diode Switches
rF2)
[Ω]
@IF
[mA]
rF2)
[Ω]
@IF
[mA]
CT3)
[pF]
@VR
[V]
τL4)
[ns]
Package
BAR90-02LS
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-2-1
BAR90-098LRH D
1.3
3.0
0.8
10.0
0.25
1.0
750
TSLP-4-7
1.3
3.0
0.8
10.0
0.25
1.0
750
TSSLP-8-1
1.3
3.0
0.8
10.0
0.25
1.0
750
TSLP-2-7
Application
Note
Product1)
BAR90-081LS
BAR90-02LRH
Notes:
Q
TR1054
1) D=Dual; T=Triple; Q=Quadruple;
2) at 100 MHz;
3) at 1 MHz;
4) Switching time between the forward bias of IF = 10 mA and reverse bias of IR = 6 or 3 mA;
5) Please visit our website http://www.infineon.com/pindiodes for alternative devices.
20
RF and Protection Devices
Application Guide for Protection
High-Speed CMOS Switches
Product
Application
Note
BGS12A
BGS12AL7-4
AN175
BGS12AL7-6
BGS22W
Notes:
On Request
Supply
[V]
Vctrl1)
[V]
IL2)
[dB]
Isolation3)
[dB]
P-0.1dB4)
[dBm]
BW5)
[GHz]
Package
2.4…2.8
1.4…2.8
0.3/0.6
34/27
> 21
-
FWLP-6-1
2.4…2.8
1.4…2.8
0.4/0.5
32/25
> 21
-
TSLP-7-4
2.4…2.8
1.4…2.8
0.4/0.5
32/25
> 21
-
TSLP-7-6
2.8…4.7
1.5…Vdd
0.26/0.33
> 26 / > 20
> 30
4.5
TSNP-14
1) Digital Control Voltage;
2) IL = Insertion Loss at 1.0/ 2.0 GHz;
4) 0.1dB compression point;
5) measured at 1dB IL.
6) Please visit our website http://www.infineon.com/rfswitches for alternative devices.
21
3) Isolation at 1.0/ 2.0 GHz;
RF and Protection Devices
Application Guide for Protection
3.8
ESD and Transient Protection for VDSL, ADSL & Other Broadband
Applications
Vcc
4
Primary
Protection
DSL
Line Driver
TIP
3
2
1
DSL 70
RING
ESD Diodes
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
DSL70
Broadband
+50
±15
2.7@16
4.0@30
0.1
27
6
2.5
2
SOT143
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
22
RF and Protection Devices
Application Guide for Protection
4
General Purpose Interface Protection
Infineon general purpose ESD diodes are designed to handle high-peak transient current far beyond current
standards while remaining unchanged in protection characteristics even after repetitive strikes. These devices
are especially well suited for ESD and transient protection of low-speed HID data normally used by keypads,
buttons, touch screens and audio lines. These same devices provide excellent and economical protection for
power and battery lines from which ESD has an entry point into the heart of the equipment. Even battery lines
that are normally only accessed by field repair personnel are often protected to keep equipment safe during
repairs and upgrades.
The audio interfaces of a mobile phone such as the microphone, speaker and headset are highly exposed to the
ESD environment during routine use. As shown in the audio circuit diagram below, an audio headset can trap
and route ESD strikes to sensitive system components. ESD strikes can also enter the phone directly via the
audio jack. The low output impedance of audio amplifiers in today’s mobile phone systems presents an
exceptional challenge because an extremely low clamping voltage is required of the ESD protection solution to
prevent damage to the amplifier. This makes low dynamic resistance a requirement in order for robust
protection to be achieved. The RF amplifier in very close proximity also presents its own set of challenges that
need to be overcome in order to prevent audio frequency rectification of the RF output stage that can enter the
audio circuits and impact audio quality.
Voltage
Time
Audio_out
single
ended
Audio
ESD-strike
Headset
cable
-Vcc
+Vcc
Figure 9
Charge
Pump
Low loss
EMI
ferrite beat
ESD Diode
Amp.
ESD-strike
Headset
Ear-phone
+Vcc
Audio_in
NO-DC_offset
Headset con.
e.g. 3.5mm jack
Application Example for typical ear-stick driver stage
To combine robust ESD protection with EMI suppression, Infineon Technologies offers silicon based ESD
diodes in a variety of packages that are tailored for audio interfaces. These ESD diodes have very low dynamic
resistance, and therefore, very low clamping voltage to protect the voltage sensitive audio driver IC and other
components. Infineon protection technology also inherently has ultra-low leakage current enabling battery
powered devices to operate or standby longer, even with many points of protection. These factors, along with
the world’s smallest single-line package and multiple-line flow through array solutions, simplify PCB layout and
enable exceptional product performance with high reliability.
23
RF and Protection Devices
Application Guide for Protection
4.1
ESD Protection for Low Data Rate Interfaces
Low data rate interfaces to keypads, buttons, trackballs, and keyboards in portable or mobile equipment are
significant entry points for ESD hazards. These circuits are typically powered by less than 5VDC. The
ESD5V3L1B device provides a straightforward and effective ESD protection for those interfaces. The
ESD8V0R1B and the ESD5V0S5US are also effective in these applications.
1.0x0.6x0.4mm
1.0x0.6x0.39mm
0.6x0.3x0.3mm
Keypad
*
7
4
1
0
8
5
2
#
9
6
3
R1
R2
R3
C1
C2
C3
C4
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD8V0R1B
General
purpose
+14/-8
±18
+28/-27@±16
+35/-35@±30
0.5/0.6
±1
+23/
-17
4
1
TSLP-2-17
TSSLP-2-1
ESD5V3L1B
General
purpose
±5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
ESD5V0S5US
General
purpose
+5.0
±30
10@16
14@±30
0.25
10
10.5
70
5
SOT363
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
Flow Through Layout Recommendation for ESD5V0S5US in SOT363
24
RF and Protection Devices
Application Guide for Protection
4.2
ESD Protection for Dual Channel General Purpose e.g. AV I/F Interfaces
+Vcc
Audio out
single ended
Audio
Amp.
Audio_in
right
ESD strike
ESD strike
Headset
cable
ESD Diode
-Vcc
+Vcc
Headset
Ear-phone
right
Charge
Pump
Low loss Headset con.
EMI
e.g. 3.5 mm
Ferrite
jack
beat
+Vcc
Audio_in
left
Charge
Pump
Headset
Ear-phone
left
-Vcc
Audio
Amp.
ESD Diode
Headset
cable
ESD strike
ESD strike
Audio out
single ended
+Vcc
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3L1B
General
purpose
+5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
ESD8V0R1B
General
purpose
+14/-8
±18
+28/-27@±16
+35/-35@±30
0.5/0.6
±1
+23/
-17
4
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
25
RF and Protection Devices
Application Guide for Protection
ESD Protection for Near Field Communication (NFC)
ESD
Diode
EMI-LP
filter
Tx+
GND
antenna
matching
loop antenna
Base
band
Tx+
Rx
Security
Controller
RF = 13.56 MHz
Vsignal vs. |GND| < 18 Vp
NFC
Transceiver IC
4.3
SIM
SWP
Main PCB / Top shell
Application 1: single-ended antenna
EMI-LP
filter
Tx+
TxGND
antenna
matching
loop antenna
Base
band
Rx
Security
Controller
ESD
Diode
NFC
Transceiver IC
RF = 13.56 MHz
Vsignal vs. |GND| < 18 Vp
+Vsignal vs. –Vsignal < 36V
SIM
SWP
Main PCB / Top shell
Application 2: differential antenna
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD18VU1B
on request
NFC
±18.5
±15
26@16
35@30
0.6
2
10
0.6
1
TSSLP-2-1
TSLP-2-17
ESD24VL1B
NFC /
charger
protection
±24
±20
55@16
72@30
1.3
1
40
2
1
TSSLP-2-1
TSLP-2-17
ESD3V3XU1U
SWP
interface
+3.3
±15
8@16
11@30
0.2
3
8.5
0.35
1
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
26
RF and Protection Devices
Application Guide for Protection
4.4
Reverse Polarity Protection (RPP) Circuit
DC
GND
+Vs/
GND
GND
+Vs
+Vs
DC
GND/
+Vs
RPP Diodes
RPP
Diode
+Vs
GND
DC protected circuit
DC protected circuit
Prevents damage to the circuit
System works with reverse polarity
AF Schottky Diodes for RPP
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAS3005A-02V
-
10
5
260
10
450
500
< 300
30
SC79
BAS3005A-02LRH
-
10
5
260
10
450
500
15
5
TSLP-2-17
BAS3010A-03W
-
28
5
220
10
450
1000
< 200
30
SOD323
BAS3010S-02LRH
-
10
5
340
100
570
1000
30
10
TSLP-2-17
BAS3020B
-
30
5
350
1000
530
2000
40
30
SOT363
BAS4002S-02LRH
-
7
5
330
10
470
200
0.5
5
TSLP-2-17
IR
[μA]
@VR
[V]
Package
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
AF Schottky Diodes for advanced RPP (system works also with reverse polarity)
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
BAS4002A-RPP Q
-
2.2
5
BAS3007A-RPP Q
-
10
5
Notes:
@IF
[mA]
VF
[mV]
@IF
[mA]
390
10
550
100
<2
30
SOT143
350
100
550
700
< 100
24
SOT143
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
27
RF and Protection Devices
Application Guide for Protection
4.5
Reverse Polarity Protection for USB Charger
RPP
Diode
DC Adapter
USB
Charger
IC
USB Power
ICHG
SYSTEM
+
MOSFET
Battery
MOSFET
AF Schottky Diodes for RPP
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAS4002A-02LRH
-
7
5
330
10
470
200
0.5
5
TSLP-2-17
BAS3005A-02LRH
-
10
5
260
10
450
500
15
5
TSLP-2-17
BAS3010S-02LRH
-
10
5
340
100
570
1000
30
10
TSLP-2-17
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
28
RF and Protection Devices
Application Guide for Protection
4.6
Rectifier Circuit with Schottky Diodes
Bridge
Rectifier
AC
Power
Supply IC
DC
EMI/EMC filter
AF Schottky Diodes for Rectifier Circuit
Application
Note
VR,max2)
[V]
IF,max3)
[mA]
VBR
[V]
IR
[μA]
@VR
[V]
VF
[V]
@IF
[mA]
τrr
[ns]
Package
D
-
50
140
50
< 0.2
50
< 1.3
100
< 6.0
SOT143
BAS4002A-RPP D
-
40
200
40
< 10
40
< 0.62
<2
-
SOT143
BAS3007A-RPP D
-
30
350
30
< 350
30
< 0.4
< 100
-
SOT143
Product1)
BGX50A
Notes:
1) D=Dual; T=Triple; Q=Quadruple;
2) Reverse voltage in maximum ratings;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
29
3) Forward current in maximum ratings;
RF and Protection Devices
Application Guide for Protection
4.7
Clipping and Clamping
Vs
After Filtering
Digital spikes
Discrete spike filter
RF Schottky Diodes for Clipping and Clamping
Product1)
Application
Note
CT2)
[pF]
@VR
[V]
VF
[mV]
@IF
[mA]
VF
[mV]
@IF
[mA]
IR
[μA]
@VR
[V]
Package
BAT54 series
-
< 10
1
< 320
1
< 800
100
<2
25
SOT23
SOT323
TSLP-2-7
SC79
BAT64 series
-
4
1
320
1
570
100
<2
25
SOT23
SOT323
SCD80
8
SOT23
SOT323
SOT343
SOT363
40
SOT23
SOT143
SOT323
SOT343
TSLP-2-1
70
SOT23
SOT143
SOT323
SOT343
SOT363
SCD80
TSLP-2-1
BAT68 series
BAS40 series
BAS70 series
Notes:
-
-
-
0.7
3
1,5
0
0
0
318
1
310
1
375
1
1) D=Dual; T=Triple; Q=Quadruple;
2) at 1 MHz;
3) Please visit our website http://www.infineon.com/schottkydiodes for alternative devices.
30
390
720
705
10
40
10
< 10
< 10
< 10
RF and Protection Devices
Application Guide for Protection
5
ESD / Surge Protection
Protection of a semiconductor IC against a surge or transient voltage is very critical in systems where AC mains
power is involved. One such system is the Ethernet, the most used system for network communications directly
from the backbone to servers to desktops. Ethernet has evolved from 10 Mbps data-rates to 1000 Mbps Gigabit
Ethernet (1000base-T). On the horizon, the 10 Gbps Ethernet (10GBase-T) is visible for back office
applications. Below is a simplified illustration of an Ethernet network. As shown graphically, there can be direct
or indirect ESD strikes and surges affecting the ESD sensitive devices of any equipment on the network with
destructive consequences resulting in reduction of the quality of service.
Surges can be generated by a fault in the AC mains, switching of capacitors, or lightning. Surges can directly
strike the RJ45 connector or they can be induced on the cable by electro-magnetic fields. Apart from surges on
the AC mains, the system also needs to be protected from other causes of ESD strikes like human touch during
installation, maintenance and normal operation. Emerging nations such as China have introduced strict
regulations on the protection of Ethernet systems from surges due to the fluctuations in AC mains power. This is
due to relatively unstable power distribution networks found in China and other countries.
ESD and surge strikes can both enter equipment through the RJ45 connector where they must pass through the
standard Ethernet quad-transformer before hitting the transceiver IC.
Direct injected ESD
and Surge strikes
Induced surges
File Server
Gigabit Ethernet
Adapter Card
RJ45 Jack for Gigabit
Ethernet Connection
Gigabit EthernetSwitch
Direct injected ESD
and Surge strikes
Workstations
Figure 10
Ethernet structure
The Gigabit Ethernet cable has four twisted differential pairs called “lanes”, each delivering full-duplex data.
Each lane is capable of transferring data at 250 Mbps. Because of PAM (Pulse Amplitude Modulation) each
symbol transferred requires 2 bits.
31
RF and Protection Devices
Application Guide for Protection
Therefore, fundamental transfer frequency is 62.5 MHz requiring a CAT5e or better cable (fT = 100 MHz
minimum). The high data rate imposes high signal quality challenges to maintain integrity of the PAM waveform,
especially over long link distance. Complete ESD and Surge robustness of the system is accomplished as
follows:
1. Primary Side Protection: The primary side, which is comprised of the RJ45 connector, transformer and
PCB, can be protected against very high voltage strikes using gas tubes which are triggered at a certain
voltage level to short the strike energy to ground.
2. Secondary Side Protection: The secondary side, which is usually connected to a sensitive semiconductor
IC such as an Ethernet PHY, requires a precise ESD and surge protection network to assure complete
protection from any damage caused by secondary side induced surge pulse.
To maintain maximum signal integrity on both the primary and secondary sides, the protection devices must
have very low capacitance.
5.1
ESD Requirements:
An IEC61000-4-2 level-4 ESD protection circuit should be able to handle ESD strikes of up to 8 kV contact
discharge and 15 kV air discharge according to the standard. However, more and more Infineon customers are
requesting 15 kV contact discharge ESD robustness in order to meet quality of service requirements, reduce
repair costs and cost of ownership, and to increase the customer’s satisfaction with the overall experience with
the equipment.
5.2
Surge Requirements:
Surge waveforms according to the IEC 61000-4-5 standard are defined for a short circuit case as either 8/20 µs
or 5/320 µs. For a DUT (Device under Test) acting as an open circuit, the relevant waveform characteristics
defined in the standard are 1.2/50 µs or 10/700 µs. Test-current peak value is adjusted according to the
intended test-class. This document focuses on the Chinese requirements for surge protection shown below.
5.2.1
Line-to-Line (L/L) Case
In this case, the system is seen as a short circuit by the surge source. The system has to be protected against
secondary side induced surge currents and surge voltages.
The surge waveform is defined in the IEC61000-4-5 standard as a 5/320 µs current pulse at 25 A for a 1 kV test
surge and at 50 A for a 2 kV test surge which are injected into the system on primary side (RJ45 connector
side). The signal path and the return path for the current surge belong to the same lane. This surge acts in
differential mode and is therefore transferred to the secondary side of the magnetic transformer based on the
law L*dIsurge/dt. This induced voltage depends on the rise time of the primary L/L surge pulse, and the
frequency response and high current saturation of the magnetic transformer.
32
RF and Protection Devices
Application Guide for Protection
IEC61000-4-5
surge generator
Linepair #3
Linepair #4
primary side
primary side
secondary side
Magnetic module – one lane
Gigabit Ethernet
Transceiver (PHY)
Infineon
TVS diode
ESD/surge
Linepair #2
Ethernet cable
Twisted Pair#1
1:1
RJ45
Ethernet
connector
Surge current
5/350us
1kV (25A),
2kV(50A)
RX1
1:1
TX1
75 Ohm Res each lane
one common 2nF cap
Gas-tube is NOT
triggered at „Line to Line“
ESD/surge strike
Res
Spark gap
e.g. gas tube
Figure 11
Internal ESD protection
Line to Line test configuration for Ethernet
For a 5/320 µs primary side surge current, the induced surge pulse on secondary side is strongly compressed in
time down to a total duration of much less than 20 µs. Secondary side generated short circuit peak current is
less than 20 A even if the primary side L/L surge significantly exceeds 50 A (where the 50 A is related to the
2 kV test surge requirement).
Surge pulse shape and amplitude injected on the primary side is completely different with respect to the
secondary side induced surge pulse. For the L/L system level surge test, an ESD diode on the secondary side
can be used, because the surge handling capability requirement is lower compared to the primary side injected
surge pulse protection requirement.
Much more important to the survival of the Ethernet PHY is the clamping voltage of the ESD diode in the case of
a system level surge event. The lower the ESD diode clamping voltage, the lower the surge stress on the PHY.
5.2.2
Line-to-Ground (L/GND) Case
In this case, the system is seen as an open-circuit by the surge source. The system needs to be protected
against high voltage levels between the signal line and GND. The required surge waveform in the IEC6100-4-5
is defined at 10/700 µs, with a peak voltage level of 4 kV or 6 kV. This surge must be handled on the primary
side without destructive parasitic air discharge breakthrough to the secondary side. A common solution is to use
a gas-discharge tube on the primary side to reduce the surge voltage level to a safe level for the primary side
and eliminate breakthrough air discharge damage on the secondary side. Once the gas tube is triggered, the
system transforms into a short circuit which translates the surge waveform into a current pulse of 5/300 µs with
100 A or 150 A respectively for a 4 kV or 6 kV surge strike.
33
RF and Protection Devices
Application Guide for Protection
IEC61000-4-5
surge generator
primary side
primary side
Magnetic module – one lane
Linepair #1
Infineon
TVS diode
ESD/surge
Gigabit Ethernet
Transceiver (PHY)
RX1
1:1
Surge voltage
10/700us
4kV...6kV,
=> Surge current
5/320us
100A...150A
RJ45
Ethernet
connector
Linepair #2
Ethernet cable
Twisted Pair
secondary side
1:1
Linepair #4
75 Ohm Res each lane
one common 2nF cap
Linepair #3
surge voltage drop
Gas-tube is triggered at „Line
to GND“ ESD/surge strike
Res
Spark gap
e.g. gas tube
TX1
Internal ESD protection
10/700us Voltage wave
=> 5/320us Current wave
surge voltage drop till
spark-gap is triggered
Figure 12
Line to GND test configuration for Ethernet
For system protection against ESD strikes only, the recommended Infineon device is the ESD5V5ULC as
shown in table below. TVS3V3L4U is the right choice if the system is required to be protected against both ESD
and surge events as required by the Chinese government regulations.
34
RF and Protection Devices
Application Guide for Protection
5.3
ESD Surge Protection for Gigabit Ethernet
1:1
5
3
4
Res
TVS3V3L4U
6
2
Res
1:1
Quad
Transformer
Ethernet cable
Twisted Pair
RJ45
Ethernet connector
1:1
Gigabit Ethernet Transceiver (PHY)
1
Ethernet cable
Twisted Pair
1:1
1:1
6
2
5
3
4
Res
TVS3V3L4U
1
Ethernet cable
Twisted Pair
1:1
Res
1:1
1:1
ESD ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
TVS3V3L4U
on request
GBit
Ethernet
+3.3
±25
5.8@16
7.1@30
0.1
20
8
2.0
4
SC74
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
Flow Through Layout Recommendation for TVS3V3U4ULC in SC74
35
RF and Protection Devices
Application Guide for Protection
6
Interface Protection with Integrated ESD/EMI Devices
With increasing numbers of wireless functions integrated into portable and mobile equipment, not only robust
protection from ESD, but also immunity from EMI is mandatory to ensure reliable and maximum functionality.
Infineon offers various high performance types of integrated protection devices combining ESD and EMI
protection in miniature packages for mobile phone applications.
BGF100/BGF200
BGF113
AV I/F
BGF112
TV
BGF111
LCD
BGF108c/BGF109c
SIM Card
BGF106c
BGF124/BGF125
µSD/SD
Card
BGF117
HSMM Card
BGF104
Charger
BGF119
HDMI
BGF127/BGF128
Digital Baseband IC
Headset
Analog
Baseband IC
Following is a short overview of the available ESD/EMI devices for various interfaces.
Overview of Infineon’s Integrated ESD/EMI Devices for Interface Protection
36
RF and Protection Devices
Application Guide for Protection
Alternatively, discrete ESD diodes can also be used for general interface protection. The following diagram
provides a summary of suitable ESD diodes for various interfaces.
Analog/Digital Interfaces
Headset
RF Interfaces
ESD5V3S1B
ESD5V3L1B
ESD8V0-series
NFC
ESD18VU1B
ESD24VL1B
TV/Audio
LCD
ESD5V3U-series
ESD5V3L1B-series
USB1.1/2.0
ESD5V3U-series
USB3.0
ESD3V3U4ULC
Camera
ESD5V3U-series
ESD5V3L1B-series
SIM Card
SD Card
MM Card
ESD5V3U4U-HDMI
ESD5V3U-series
ESD5V3L1B-series
I/O Data
ESD8V0-series
ESD5V3S1B-series
ESD5V3L1B-series
HDMI
ESD5V3U4U-HDMI
ESD5V3U-series
Human
Interfaces
ESD8V0-series
ESD5V3L1B-series
ESD5V3L1U-02LRH
SWP
ESD3V3XU1US
Keypad
Electronic
Equipment
e.g. mobile/
wireless/
portable devices,
consumer
& industrial units
ESD0P2RF
ESD0P1RF
WLAN
GPS
ESD0P2RF
ESD0P1RF
Mobile TV
ESD0P2RF
ESD0P1RF
FM
ESD0P2RF
ESD0P1RF
RPP Diode
Power Supply
USB Charger
Overview of Infineon’s ESD Diodes for Interface Protection
For further information about Infineon’s ESD diode portfolio and applications, please refer to our ESD Protection
Brochure www.infineon.com/tvs.brochure. You can also visit our webpage for protection devices:
www.infineon.com/protection.
37
RF and Protection Devices
Application Guide for Protection
ESD/EMI Protection for Differential Mode Microphone Interface – BGF113
6.1
VMIC(A2 or A3)
dep. on Application
VMIC
A1
A3
BGF113
15 kV
2 kV
LPF
B3
B1
MICP1
VMICP
100 nF
C2
B2
GND
MIC
GND
VMICN
LPF
C1
C3
MICN1
100 nF
15 kV
2 kV
Baseband IC
HiPAC – Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
Stop Band Attenuation2)
[dB]
Protected
Lines
Package
BGF113
Audio Line
Interface
±4
±15
40
2
WLP-8-6
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) Measured in 50 Ohm environment @ 1 GHz;
3) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3S1B
General
purpose
±5.3
±20
±15@±16
±19@±30
0.4
±5.5
±11
17.5
1
TSLP-2-17
TSSLP-2-1
ESD5V3L1B
General
purpose
±5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
ESD8V0R1B
General
purpose
+14/-8
±18
+28/-27@±16
+35/-35@±30
0.5/0.6
±1
+23/
-17
4
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
38
RF and Protection Devices
Application Guide for Protection
ESD/EMI Protection for SIM Card Interface – BGF106c
6.2
15 kV
15 kV
2 kV
C2
Vcc
BGF106c
C1
CLK
B1
I/O
RST
VCC
C3
B3
low
pass
A2
A3
GND
RST
CLK
I/O
Flash
Controller IC
SIM Card Connector
B2 (GND)
HiPAC – Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
Line capacitance
of all lines to GND
[pF]
Protected
Lines
Package
BGF106c
SIM Card
Interface
+5.5
±15
16.5
4
WLP-8-11
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V5U5ULC
high speed
low cap.
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
General
purpose
±5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
39
RF and Protection Devices
Application Guide for Protection
ESD/EMI Protection for 6-Pin SIM Card Interface – BGF125
6.3
15 kV
15 kV
2 kV
C2
Vcc
BGF125
C1
CLK
RST
VCC
B1
I/O
B3
low
pass
A2
C3
A3
GND
RST
CLK
I/O
Flash
Controller IC
SIM Card Connector (6-pin)
B2 (GND)
HiPAC – Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
Line capacitance
of all lines to GND
[pF]
Protected
Lines
Package
BGF125
SIM Card
Interface
±5.0
±15
10
4
WLP-8-10
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V5U5ULC
high speed
low cap.
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
General
purpose
±5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
40
RF and Protection Devices
Application Guide for Protection
ESD/EMI Protection for 8-Pin SIM Card Interface – BGF124
6.4
15 kV
2 kV
15 kV D1
D+
D-
CLK
I/O
RST
VCC
BGF124
A3
B3
C3
D2
D3
GND
low
pass
Vcc
RST
CLK
I/O
USB-D+
A1
B1
C1
USB-D-
Flash
Controller IC
SIM Card Connector (8-pin)
15 kV
A2, C2 (GND)
HiPAC – Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
Line capacitance
of all lines to GND
[pF]
Protected
Lines
Package
BGF124
Sim Card
Interface
±5.0
±15
10
4
WLP-11-4
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V5U5ULC
high speed
low cap.
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
General
purpose
±5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
41
RF and Protection Devices
Application Guide for Protection
ESD/EMI Protection for Flash Memory: MicroSD/MiniSD/SD Card – BGF117
6.5
BGF117
µSD Card
µSD Card Connector
DAT2
DAT2
DAT3
DAT3
CMD
CMD
Vcc
Vcc
CLK
Vcc
15kV
2kV
R*
CMD
DAT0
CLK
DAT1
LPF
GND
GND
DAT2
DAT0
DAT0
DAT3
DAT1
DAT1
CLK
* not applicabel f or CLK line
Flash
Controller IC
HiPAC – Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
Line capacitance
of all lines to GND
[pF]
Protected
Lines
Package
BGF117
SD Card
Interface
±5.5
±15
8
7
WLP-16-4
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V5U5ULC
high speed
low cap.
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
General
purpose
±5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
42
RF and Protection Devices
Application Guide for Protection
ESD/EMI Protection for High-Speed MMC-Card (4 data lines) – BGF104c
6.6
MMC Card Connector
BGF104c
DAT2
C9
For x8 HSMMC
card only
VDD
DAT3
C1
C10
15kV
CMD
2kV
R*
C2
C3
DAT0
VDD
C4
DAT1
LPF
CLK
C5
DAT2
VSS2
C12
C6
C13
CLK
CMD
VSS1
C11
DAT3
DAT0
C7
x4 HSMMC card
DAT1
C8
* not applicabel f or CLK line
Flash
Controller IC
HiPAC – Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
Line capacitance
of all lines to GND
[pF]
Protected
Lines
Package
BGF104c
SD Card
Interface
+14
±15
16
7
WLP-16-3
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V5U5ULC
high speed
low cap.
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
General
purpose
+5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
43
RF and Protection Devices
Application Guide for Protection
6.7
ESD/EMI Protection for LCD/Camera Interface - BGF108c / BGF109c
2 x BGF108c/BGF109c
LCD Source
Drive
PD[15:0]
15 kV
LPF
7 (10)
Flash
Controller IC
7 (10)
PD[15:0]
15 kV
14 (20)
VSYNC
HSYNC
DOTCLK
ENABLE
7 (10)
VSYNC
HSYNC
DOTCLK
ENABLE
15 kV
LPF
7 (10)
FPC 1
1) Flexible Printed Circuit
BGF108c (7 lines) / BGF109c (10 lines)
HiPAC – Integrated ESD/EMI Protection Device
Notes:
Product
Application
VRWM
[V]
ESD1)
[kV]
Line capacitance
of all lines to GND
[pF]
Protected
Lines
Package
BGF108c
LCD
Interface
0…5
±15
27 @ VR = 0V
17 @ VR = 3V
7
WLP-18-4
BGF109c
LCD
Interface
-7…7
±15
28 @ VR = 0V
17 @ VR = 3V
9
WLP-24-9
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
ESD Diodes
Product
Application
VRWM
[V]
ESD1)
[kV]
VCL2)
[VCL]@[A]
Rdyn3)
[Ω]
IPP4)
[A]
VCL5)
[V]
CT6)
[pF]
Protected
Lines
Package
ESD5V3U4U-HDMI
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
4
TSLP-9-1
ESD5V3U1U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
1
TSLP-2-7
TSSLP-2-1
ESD5V3U2U
high speed
low cap.
+5.3
±15
19@16
28@30
0.65
3
12
0.4
2
TSLP-3-7
TSFP-3
ESD5V5U5ULC
high speed
low cap.
+5.5
±25
8.9@16
11.5@30
0.2
6
10
0.45
4
SC74
ESD5V3L1B
General
purpose
±5.3
±20
+10/-13@±16
+12/-17@±30
0.2
0.35
±2.5
±10
5
1
TSLP-2-17
TSSLP-2-1
Notes:
1) Electrostatic discharge as per IEC61000-4-2, contact discharge;
2) TLP clamping voltage for 100 ns pulse length;
3) Dynamic Resistance (ON-Resistance) evaluated with TLP measurement (100ns pulse length);
4) Maximum peak pulse current according to IEC61000-4-5 (8/20μs);
5) Clamping Voltage at IPP,max according to IEC61000-4-5 (8/20μs);
6) Typical capacitance at 1 MHz (unless specified), 0 V, I/O vs. GND;
7) Please visit our webpage http://www.infineon.com/tvsdiodes for alternative devices.
44
Abbreviations
Abbr.
Terms
Abbr.
Terms
ADSL
Asymmetric Digital Subscriber Line
MICP
Microphone Positive
AN
Application Note
MIPI
Mobile Industry Processor Interface
ASIC
Application Specific Integrated Circuit
MM Card
Multimedia Card
AUX
Auxiliary
MMIC
Monolithic Microwave Integrated Circuit
AV I/F
Interface
Audio Video Intermediate Frequency
Interface
NFC
Near-Field Communication (13.56 MHz)
BB
Baseband
PAM
Pulse Amplitude Modulation
BER
Bit Error Rate
PCB
Printed Circuit Board
PD
Programming Data
PHY
Physical Layer
RF
Radio Frequency
RoHS
Restriction of Hazardous Substances
RPD
RF and Protection Devices
RPP
Reserve Polarity Protection
RST
Reset
Rx
Receive
SATA
Serial Advanced Technology Attachment
SC
Semiconductor Package
BPF
Band Pass Filter
CEC
Consumer Electronics Control
CLK
Clock
CMD
Command
DAT
Data
DC
Direct Current
DPDT
Double Pole Double Throw
DSL
Digital Subscriber Line
DUT
Device under Test
DVI
Digital Visual Interface
EMI
Electromagnetic Interference
SCL
Serial Clock Line
ESD
Electro-Static Discharge
SDA
Serial Data Line
FM
Frequency Modulation (76 – 108 MHz)
(µ)SD Card
(Micro)Secure Digital Memory Card
GND
Ground
SIM Card
Subscriber Identity Module Card
GPS
Global Positioning System (1575.42 MHz)
SOT
Small Outline Transistor Package
HBM
Human Body Model
SPDT
Single Pole Double Throw
HDMI
High-Definition Multimedia Interface
SWP
Single Wire Protocol
HID
Human Interface Device
TLP
Transmission Line Pulse
TMDS
Transition Minimized Differential Signaling
HS / FS / LS
High Speed (480 Mbit/s) /
Full Speed (12 Mbit/s) /
Low Speed (1.5 Mbit/s)
TR
Technical Report
TRX
Transceiver
TSFP
Thin Small Flat Package
TSSLP
Thin Super Small Leadless Package
TV
Television
TVS
Transient Voltage Suppression
Tx
Transmit
USB
Universal Serial Bus
VDSL
Very High Speed Digital Subscriber Line
VSYNC
Vertical Synchronization
VMIC
Voltage Microphone
WLAN
Wireless Local Area Network
WLP
Wafer Level Package
HSMM
High-Speed Multimedia
HSYNC
Horizontal Synchronization
IC
Integrated Circuit
IEC
International Electrotechnical Commission
I/O
Input / Output
LCD
Liquid Crystal Display
L/GND
Line-to-Ground
L/L
Line-to-Line
LNA
Low Noise Amplifier
LPF
Low Pass Filter
MHL
Mobil High-definition Link
ML
Main Lane
MICN
Microphone Negative
Alphanumerical List of Symbols
Symbol
Term
Unit
BW
Bandwidth
[GHz]
CT
Total Diode capacitance
[pF]
IF
Forward current
[mA]
IPP
Maximum peak pulse current
[A]
IR
Reserve current
[uA]
IL
Insertion loss
[dB]
P-0.1dB
0.1dB compression point
[dBm]
Rdyn
Dynamic Resistance
[Ω]
rF
Differential forward resistance
[Ω]
VBR
Breakdown voltage
[V]
VCL
Clamping voltage
[V]
Vctrl
Digital control voltage
[V]
Vdd
DC supply voltage
[V]
VF
Forward voltage
[mV]
VR
Reverse voltage
[V]
VRWM
Reverse working voltage
[V]
τL
Storage time
[ns]
τrr
Reverse recovery time
[ns]
Package Information
Package (JEITA-code)
X
L×W×H
PIN-Count
Scale 1:1
All products are available in green (RoHS compliant).
All Dimensions in mm
1.6 × 0.8 × 0.55
2
1.7 × 0.8 × 0.7
2.0 × 2.1 × 0.9
4
WLP-16-4 ( - )
1.55 × 1.55 × 0.6
3:1
8
4:1
8
2
7:1
7
TSLP-7-6 ( - )
2.3 × 1.5 × 0.4
7
4:1
1.4 × 1.26 × 0.39
3:1
3:1
WLP-16-3 ( - )
WLP-8-11 ( - )
1.15 × 1.15 × 0.6
0.62 × 0.32 × 0.31
4:1
WLP-8-10 ( - )
1.16 × 1.16 × 0.6
TSSLP-2-1 ( - )
1.2 × 1.2 × 0.55
TSLP-7-4 ( - )
1.0 × 0.6 × 0.39
2.9 × 2.4 × 1.0
2:1
TSFP-3 ( - )
3
5:1
WLP-8-6 ( - )
3:1
16
3
4
2:1
TSLP-3-7 ( - )
1.0 × 0.6 × 0.39
5:1
TSLP-9-1 ( - )
2.3 × 1.0 × 0.31
2.0 × 2.1 × 0.9
SOT143 (SC - 61)
2.9 × 2.4 × 1.1
2:1
TSLP-2-7 ( - )
2
5:1
9
6
3:1
TSLP-2-17
1.0 × 0.6 × 0.39
3
SOT363 (SC - 88)
2.0 × 2.1 × 0.9
3:1
2
2.5 × 1.25 × 0.9
2:1
SOT343 (SC-82)
SOT323 (SC-70)
3
2
3:1
3:1
SOT23 ( - )
SOD323 (SC-76)
SCD80 (SC-80)
SC79 (SC-79)
2
8
1.2 × 1.2 × 0.6
4:1
16
1.92 × 1.92 × 0.65
3:1
Support Material
Data Sheets / Application Notes / Technical Reports
www.infineon.com/rfandprotectiondevices
Products:
-
RF CMOS Switches
RF MMICs
RF Transistors
RF Diodes
PIN Diodes
Schottky Diodes
Varactor Diodes
ESD/EMI Protection Devices
www.infineon.com/rfswitches
www.infineon.com/rfmmics
www.infineon.com/rftransistors
www.infineon.com/rfdiodes
www.infineon.com/pindiodes
www.infineon.com/schottkydiodes
www.infineon.com/varactordiodes
www.infineon.com/ESDdiodes
Brochures:
- Selection Guide
www.infineon.com/rpd_selectionguide
- Application Guide for Mobile Communication
www.infineon.com/rpd_appguide_mobile
- Application Guide for Consumer Applications
www.infineon.com/rpd_appguide_consumer
- Application Guide for Industrial Applications
- Application Guide for Protection
- ESD Protection Solutions – Consumer and Wireless
Communication
- GPS Front-End Components for Mobile and Wireless
Applications
www.infineon.com/rpd_appguide_industrial
www.infineon.com/rpd_appguide_protection
www.infineon.com/ESD.brochure
www.infineon.com/gps
Sample Kits
www.infineon.com/rpdkits
Evaluation Boards
For more information please contact your sales
counterpart at Infineon.