INFINEON ESD3V3U4ULC

TVS Diodes
Transient Voltage Suppressor Diodes
ES D3 V3U 4 U L C
Ultra Low Capacitance ESD Array
ESD3V3U4ULC
Data Sheet
Revision 0.9, 2010-10-14
Preliminary
Industrial and Multi-Market
Edition 2010-10-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD3V3U4ULC
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 0.9, 2010-10-14
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Preliminary Data Sheet
3
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
1.1
1.2
Ultra Low Capacitance ESD Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
3.1
3.2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . 10
4
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
6.1
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSLP-9-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Preliminary Data Sheet
4
Revision 0.9, 2010-10-14
ESD3V3U4ULC
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
a) Pin Configuration and b) Schematic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions of electrical characteristics[1] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Line capacitance CL = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reverse current IR = f(TA), VR = 3.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Forward characteristic, IF = f(VF), current forced . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Reverse characteristic, IR = (VR), voltage forced . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Reverse TLP characteristicNote: [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Forward TLP characteristicNote: [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
USB3.0 structure with ESD protection devices [3] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-TSLP-9-1: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSLP-9-1: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSLP-9-1: Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSLP-9-1: Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Preliminary Data Sheet
5
Revision 0.9, 2010-10-14
ESD3V3U4ULC
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Rating at TA = 25 °C, unless otherwise specified. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Preliminary Data Sheet
6
7
8
8
9
9
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Ultra Low Capacitance ESD Array
1
Ultra Low Capacitance ESD Array
1.1
Features
•
•
•
•
•
•
•
•
•
•
ESD / Transient protection of high speed data lines exceeding :
• IEC61000-4-2 (ESD) : ±20 kV (air/contact)
• IEC61000-4-4 (EFT) : 2.5 kV (5/50ns)
• IEC61000-4-5 (Surge) : 3 A (8/20ns)
Maximum working voltage: VRWM = 3.3 V
Very low reverse current: IR = 1 nA (typical)
Extremely low capacitance CL = 0.4 pF I/O to GND (typical)
Very low reverse clamping voltage: VCL= 9 V at IPP = 16 A (typical)
Very low forward clamping voltage: VFC= 6 V at IPP = 16 A (typical)
Very low reverse dynamic resistance: Rdyn,rev = 0.2 Ω (typical)
TSLP-9-1 package with pad pitch 0.5 mm
Optimized pad design to simplify PCB layout
Pb-free and Halogen-Free package (RoHS compliant)
1.2
•
•
•
Application Examples
USB 3.0, 10/100/1000 Ethernet, Firewire
DVI, HDMI, S-ATA, DisplayPort, Mobile communication, LCD displays, Camera
Consumer products (STB, MP3, DVD, DSC, ...) Notebooks and desktop computers, peripherals
2
Product Description
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 1
I/O
Pin 2
I/O
Pin 4
I/O
Pin 5
I/O
GND
Pin 9
Pin 8
Pin 7
Pin 6
a) Pin configuration
b) Schematic diagram
Figure 1
a) Pin Configuration and b) Schematic Diagram
Table 1
Ordering information
Type
Package
Configuration
ESD3V3U4ULC
PG-TSLP-9-1
4 lines, uni-directional
Preliminary Data Sheet
Pin 3
7
Marking code
Z2
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Characteristics
3
Characteristics
Table 2
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-20
–
20
kV
IPP
-3
–
3
A
Operating temperature
TOP
-40
–
125
°C
Storage temperage
Tstg
-65
–
150
°C
ESD contact discharge
1)
Peak pulse current (tp = 8/20 µs)
2)
1)VESD according to IEC61000-4-2
2)IPP according to IEC61000-4-5
Electrical Characteristics at TA = 25 °C, unless otherwise specified
3.1
VF Forward voltage
IF
I F Forward current
Rdiff, rev Differential reverse series resistance
Rdiff , fwd Differential forward series resistance
I PP
VR Reverse voltage
VTrig Triggering reverse voltage
VR
Rdiff, fwd
I R Reverse current
VCL Clamping voltage
VHold Holding reverse voltage
VTrig
VR
VHold
VRWM Reverse working voltage maximum
VRWM
VCL
VFC
IRWM
VF
VFC Forward clamping voltage
ITrig
I Trig Triggering reverse current
IHold
IHold Holding reverse current
VF
I PP Peak pulse current
Rdiff, rev
IRWM Reverse working current maximum
-IPP
IR
Diode _Characteristic_Curve_with_snapback.vsd
Figure 2
Definitions of electrical characteristics[1]
Table 3
DC characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Reverse working voltage VRWM
Reverse current
Preliminary Data Sheet
IR
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
–
–
3.3
V
I/O to GND
–
1
50
nA
VR = 3.3 V,
I/O to GND
8
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Characteristics
Table 4
RF characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Line capacitance
CL
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
–
0.4
0.65
pF
VR = 0 V, f = 1 MHz,
I/O to GND
–
0.2
0.35
pF
VR = 0V, f = 1 MHz,
I/O to I/O
Table 5
ESD characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
–
9
–
V
IPP = 16 A
–
12
–
V
IPP = 30 A
–
6
–
V
IPP = 16 A
–
10
–
V
IPP = 30 A
Reverse clamping
voltage1) [2]
VCL
Forward clamping
voltage1) [2]
VFC
Reverse dynamic
resistance1) [2]
Rdyn, rev
–
0.2
–
Ω
Forward dynamic
resistance 1)[2]
Rdyn, fwd
–
0.25
–
Ω
1) Please refer to Application Note AN210. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between IPP1 = 10 A and
IPP2 = 40 A.
Preliminary Data Sheet
9
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Characteristics
Typical Performance characteristics at TA = 25 °C, unless otherwise specified
3.2
1.5
CL (pF)
1
0.5
0
0
1
2
VR (V)
3
Line capacitance CL = f(VR)
Figure 3
-6
10
IR (A)
10-7
-8
10
-9
10
10-10
-50
Figure 4
-25
0
25
50 75
TA (°C)
100 125 150
Reverse current IR = f(TA), VR = 3.3 V
Preliminary Data Sheet
10
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Characteristics
-1
10
10-2
10-3
IF (A)
-4
10
10-5
10-6
-7
10
-8
10
0.3
0.4
0.5
0.6
VF (V)
0.7
0.8
0.9
Forward characteristic, IF = f(VF), current forced
Figure 5
-2
10
10-3
-4
10
-5
10
-6
IR (A)
10
10-7
-8
10
-9
10
-10
10
10-11
10-12
Figure 6
0
1
2
3
4
VR (V)
5
6
7
Reverse characteristic, IR = (VR), voltage forced
Preliminary Data Sheet
11
Revision 0.9, 2010-10-14
ESD3V3U4ULC
70
35
60
30
50
25
40
20
30
15
Rdyn=0.2Ω
20
Equivalent VIEC [kV]
TLP Current (A)
Characteristics
10
10
5
ESD3V3U4ULC
Rdyn
0
0
5
10
15
0
20
25
TLP Voltage (V)
Reverse TLP characteristicNote: [2]
0
0
-10
-5
-20
-10
-30
-15
-40
-20
Rdyn=0.25Ω
-50
-25
-60
-70
-25
Equivalent VIEC [kV]
TLP Current (A)
Figure 7
-30
ESD3V3U4ULC
Rdyn
-20
-15
-10
-35
-5
0
TLP Voltage (V)
Figure 8
Forward TLP characteristicNote: [2]
Note: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP charactertistic between IPP1 = 10 A and IPP2 = 40 A. The
equivalent stress level VIEC according IEC 61000-4-2 (R = 330 Ω , C = 150 pF) is calculated at the broad
peak of the IEC waveform at t = 30 ns with 2 A / kV
Preliminary Data Sheet
12
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Application Information
4
Application Information
To design USB3.0 link for best system level ESD performance and error free Signal Integrity is mandatory.
To bring both requirements together, the ESD protection devices has to provide excellent ESD and a very low
device capacitance. The Infineon ESD3V3U4ULC in “array” configuration, combined with a clear and straight
forward “full through” layout fulfills these requirements in the best way.
TVS ESD diodes
TX+
SuperSpeed
Data IN
TX+
TX+
+
-
RXTX-
USB3.0: SS-Hub
e.g. PC
TXmated
connector
+ RX+
RX-
+
-
SuperSpeed
Data OUT
TXUSB3.0 cable
SS transmission
channel
RX+
SuperSpeed
Data OUT
RX+
mated
connector
USB3.0: SS-Device
e.g. storage
RX+
TX+
TX-
RX-
+
-
SuperSpeed
Data IN
RX-
TVS ESD diodes
Figure 9
USB3.0 structure with ESD protection devices [3]
Preliminary Data Sheet
13
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Ordering information scheme
5
ESD
Ordering information scheme
0P1
RF
- XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance C L in pF: (i.e.: 0P1 = 0.1pF)
ESD 5V3 U n U - XX YY
Package or Application
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V)
Figure 10
Ordering Information Scheme
Preliminary Data Sheet
14
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Package Information
6
Package Information
6.1
PG-TSLP-9-1
Bottom view
1±0.035
A
(0.03)
0.59
5
6
0.5
B
7
4
0.94 ±0.025 1)
3
2
0.05 A B
0.4 ±0.025 1)
0.05 A B
4 x 0.5 = 2
(0.05)
0.05 MAX.
0.05 A B
8
1
9
Pin 1 marking
8 x 0.35 ±0.025 1)
0.05 A B
1) Dimension applies to plated terminals
TSLP-9-1-PO V02
PG-TSLP-9-1: Package Overview
1
0.3
0.2
0.3
0.38
0.3
0.38
0.38
0.38
0.2
0.2
0.3
2.3
0.3
0.2
0.3
0.3
0.3
0.3
0.2
2.3
0.2
0.3
0.2
1
0.2
Figure 11
2.3 ±0.035
0.31+0.01
-0.02
8 x 0.2 ±0.025 1)
Top view
0.24
0.24
Copper
Stencil apertures
Solder mask
TSLP-9-1-FP V01
Figure 12
PG-TSLP-9-1: Footprint
0.5
8
2.3
4
Pin 1
marking
Figure 13
1.6
TSLP-9-1-TP V03
PG-TSLP-9-1: Packing
1234567
Type code
Data code (YYWW)
Pin 1 marking
TSLP-9-1-MK V02
Figure 14
PG-TSLP-9-1: Marking
Preliminary Data Sheet
15
Revision 0.9, 2010-10-14
ESD3V3U4ULC
References
References
[1]
On-chip ESD protection for integrated circuits, Albert Z. H. Wang, ISBN:0-7923-7647-1
[2]
Infineon Technologie AG - Application Note AN210: Effective ESD Protection Design at System Level
Using VF-TLP Characterization Methodology
[3]
Infineon Technologie AG - Application Note AN240: Effective ESD Protection for USB3.0, combined with
perfect Signal Intergrity.
Preliminary Data Sheet
16
Revision 0.9, 2010-10-14
ESD3V3U4ULC
Terminology
Terminology
CL
Line capacitance
DSC
Digital Still Camera
DVD
Digital Versatile Disc
DVI
Digital Visual Interface
EFT
Electrical Fast Transient
ESD
Electrostatic Discharge
HDMI
High Definition Multimedia Interface
IEC
International Electrotechnical Commission
IPP
Peak pulse current
IR
Reverse current
IRWM
Reverse working current maximum
LCD
Liquid Crystal Display
MP3
Moving Picture Experts Group III
PCB
Printed Circuit Board
Rdyn, fwd
Forward dynamic resistance
Rdyn, rev
Reverse dynamic resistance
RoHS
Restriction of Hazardous Substances Directive
S-ATA
Serial Advanced Technology Attachment
STB
Set-Top-Box
TA
Ambient temperature
TLP
Transmission Line Pulse
TOP
Operation temperature
tp
Pulse duration
tr
Pulse rise time
Tstg
Storage temperature
USB
Universal Serial Bus
VCL
Reverse clamping voltage
VESD
Electrostatic discharge voltage
VFC
Forward Clamping Voltage
VHold
Holding Voltage
VIEC
Equivalent stress level according IEC61000-4-2 (R = 330 Ω , C = 150 pF)
VR
Reverse voltage
VRWM
Reverse working voltage maximum
VTrig
Triggering Voltage
Z0
Impedance
Preliminary Data Sheet
17
Revision 0.9, 2010-10-14
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Published by Infineon Technologies AG