B GA 7L1 N 6 Singl e - Ba nd L TE L NA Singl e B and LT E LN A B G A7L1 N 6 Sup por tin g Ban d - 5 (869 -8 94 MHz ) Using 02 0 1 C o mpo n ents Applic atio n N ote A N 351 Revision: Rev. 1.0 2013-11-13 RF and P r otecti on D evic es BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Application Note AN351 Revision History: 2013-11-13 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN351, Rev. 1.0 2 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Introduction Table of Content 1 1.1 1.2 1.3 Introduction ........................................................................................................................................ 4 Introduction About 3G and 4G ............................................................................................................. 4 Applications .......................................................................................................................................... 6 Infineon LNAs for 3G, 4G LTE and LTE-A Applications ...................................................................... 7 2 2.1 2.2 BGA7L1N6 Overview ....................................................................................................................... 10 Features ............................................................................................................................................. 10 Description ......................................................................................................................................... 10 3 3.1 3.2 3.3 Application Circuit and Performance Overview ............................................................................ 13 Summary of Measurement Results .................................................................................................... 13 BGA7L1N6 as LTE LNA for Band-5 (869-894 MHz) .......................................................................... 15 Schematics and Bill-of-Materials ........................................................................................................ 16 4 Measurement Graphs ...................................................................................................................... 17 5 Evaluation Board and Layout Information .................................................................................... 25 6 Authors .............................................................................................................................................. 26 7 Remark .............................................................................................................................................. 26 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Example of Application Diagram of RF Front-End for 3G and 4G Systems. ....................................... 6 BGA7L1N6 in TSNP-6-2 .................................................................................................................... 10 Equivalent Circuit of BGA7L1N6 ........................................................................................................ 11 Package and Pin Connections of BGA7L1N6 .................................................................................... 11 Footprint Recommendation of BGA7L1N6 ........................................................................................ 12 Schematics of the BGA7L1N6 Application Circuit ............................................................................. 16 Insertion Power Gain (Narrowband) of the BGA7L1N6 for Band-5 Applications .............................. 17 Insertion Power Gain (Wideband) of the BGA7L1N6 for Band-5 Applications ................................. 17 Noise Figure of the BGA7L1N6 for Band-5 Applications ................................................................... 18 Input Matching of the BGA7L1N6 for Band-5 Applications ................................................................ 18 Input Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications ......................................... 19 Output Matching of the BGA7L1N6 for Band-5 Applications ............................................................. 19 Output Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications ...................................... 20 Reverse Isolation of the BGA7L1N6 for Band-5 Applications ............................................................ 20 Stability K-factor of the BGA7L1N6 for Band-5 Applications ............................................................. 21 Stability Mu1-factor of the BGA7L1N6 for Band-5 Applications ......................................................... 21 Stability Mu2-factor of the BGA7L1N6 for Band-5 Applications ......................................................... 22 Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V ............... 22 Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V ............... 23 rd Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V ......................... 23 rd Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V ......................... 24 Picture of Evaluation Board (overview) , BGA7L1N6 V1.0 ............................................................... 25 Picture of Evaluation Board (detailed view) ....................................................................................... 25 PCB Layer Stack ................................................................................................................................ 25 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 LTE Band Assignment ......................................................................................................................... 4 Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications ............................................. 8 Infineon Product Portfolio of LNAs for 3G and 4G Applications .......................................................... 9 Pin Assignment of BGA7L1N6 ........................................................................................................... 12 Electrical Characteristics at Room Temperature (TA = 25 °C) for ..................................................... 13 Electrical Characteristics at Room Temperature (TA = 25 °C) for ...................................................... 14 Bill-of-Materials................................................................................................................................... 16 Application Note AN351, Rev. 1.0 3 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Introduction 1 Introduction 1.1 Introduction About 3G and 4G The mobile technologies for smartphones have seen tremendous growth in recent years. The data rate required from mobile devices has increased significantly over the evolution modern mobile technologies, starting from the first 3G/3.5G technologies (UMTS & WCDMA, HSPA & HSPA+) to the recently 4G LTE-Advanced (LTE-A). LTE-A can support data rates of up to 1 Gbps. Advanced technologies such as diversity Multiple Input Multiple Output (MIMO) and Carrier Aggregation (CA) are adopted to achieve such higher data rate requirements. MIMO technology, commonly referred as the diversity path in smartphones, has attracted attention for the significant increasement in data throughput and link range without additional bandwidth or increased transmit power. The technology supports scalable channel bandwidth, between 1.4 and 20 MHz. The ability of 4G LTE to support bandwidths up to 20 MHz and to have more spectral efficiency by using high order modulation methods like QAM64 is of particular importance as the demand for higher wireless data speeds continues to grow fast. Carrier aggregation used in LTE-Advanced combines up to 5 carriers and widens bandwidths up to 100 MHz to increase the user rates, across FDD and TDD. Countries all over the world have released various frequencies bands for the 4G applications.Table 1 shows the band assignment for the LTE bands worldwide. Table 1 Band No. LTE Band Assignment Uplink Frequency Range Downlink Frequency Range Comment 1 1920-1980 MHz 2110-2170 MHz FDD 2 1850-1910 MHz 1930-1990 MHz FDD 3 1710-1785 MHz 1805-1880 MHz FDD 4 1710-1755 MHz 2110-2155 MHz FDD 5 824-849 MHz 869-894 MHz FDD 6 830-840 MHz 875-885 MHz FDD 7 2500-2570 MHz 2620-2690 MHz FDD 8 880-915 MHz 925-960 MHz FDD 9 1749.9-1784.9 MHz 1844.9-1879.9 MHz FDD Application Note AN351, Rev. 1.0 4 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Introduction Table 1 Band No. LTE Band Assignment Uplink Frequency Range Downlink Frequency Range Comment 10 1710-1770 MHz 2110-2170 MHz FDD 11 1427.9-1452.9 MHz 1475.9-1500.9 MHz FDD 12 698-716 MHz 728-746 MHz FDD 13 777-787 MHz 746-756 MHz FDD 14 788-798 MHz 758-768 MHz FDD 17 704-716 MHz 734-746 MHz FDD 18 815-830 MHz 860-875 MHz FDD 19 830-845 MHz 875-890 MHz FDD 20 832-862 MHz 791-821 MHz FDD 21 1447.9-1462.9 MHz 1495.9-1510.9 MHz FDD 22 3410-3500 MHz 3510-3600 MHz FDD 23 2000-2020 MHz 2180-2200 MHz FDD 24 1626.5-1660.5 MHz 1525-1559 MHz FDD 25 1850-1915 MHz 1930-1995 MHz FDD 26 814-849 MHz 859-894 MHz FDD 27 807-824 MHz 852-869 MHz FDD 28 703-748 MHz 758-803 MHz FDD 29 N/A 716-728 MHz FDD 33 1900-1920 MHz TDD 34 2010-2025 MHz TDD 35 1850-1910 MHz TDD 36 1930-1990 MHz TDD 37 1910-1930 MHz TDD 38 2570-2620 MHz TDD 39 1880-1920 MHz TDD 40 2300-2400 MHz TDD 41 2496-2690 MHz TDD 42 3400-3600 MHz TDD 43 3600-3800 MHz TDD 44 703-803 MHz TDD In order to cover all the bands from different countries in a unique device, mobile phones and data cards are usually equipped more bands and band combinations. Some typical examples are quad-band combinations of band 1/2/5/8, 1/3/5/7 and 3/7/5/17. The frequency bands used by TD-LTE are 3.4–3.6 GHz in Australia and UK, 2.57−2.62 GHz in the US and China, 2.545-2.575 GHz in Japan, and 2.3–2.4 GHz in India and Australia. Application Note AN351, Rev. 1.0 5 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Introduction 1.2 Applications Figure 1 shows an example of the block diagram of the front-end of a 4G modem. A SPnT switch connects one side the antenna and several duplexers for different 4G bands on the other side. Every duplexer is connected to the transmitting (TX) and receiving (RX) paths of each band. The external LNA, here for example Infineon single-band LNA BGA7L1N6, is placed on the RX path between the duplex and the bandpass SAW filter. The output of the SAW filter is connected to the receiver input of the transceiver IC. Depending on the number of bands designed in a device, various numbers of LNAs are required in a system. Recently, even mobile devices with 5 modes 13 bands are under discussion. Not only for the main pathes, but also for the diversity pathes, the external LNAs are widely used to boost end user experience while using mobile devices for video and audio streaming. Besides low noise amplifiers, Infineon Technologies also offers solutions for high power highly linear antenna switches, band switches as well as power detection diodes for power amplifiers. Figure 1 Example of Application Diagram of RF Front-End for 3G and 4G Systems. Application Note AN351, Rev. 1.0 6 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Introduction 1.3 Infineon LNAs for 3G, 4G LTE and LTE-A Applications With the increasing wireless data speed and with the extended link distance of mobile phones and 4G data cards, the requirements on the sensitivity are much higher. Infineon offers different kind of low noise amplifiers (LNAs) to support the customers for mobile phones and data cards of 4G LTE and LTE-A to improve their system performance to meet the requirements coming from the networks/service providers. The benefits to use external LNAs in equipment for 4G LTE and LTE-A applications are: - Flexible design to place the front-end components: due to the size constraint, the modem antenna and the front-end can not be always put close to the transceiver IC. The path loss in front of the integrated LNA on the transceiver IC increases the system noise figure noticeably. An external LNA physically close to the antenna can help to eliminate the path loss and reduce the system noise figure. Therefore the sensitivity can be improved by several dB. - Support RX carrier aggregation where two LNAs can be tuned on at the same time. - Boost the sensitivity by reducing the system noise figure: external LNA has lower noise figure than the integrated LNA on the transceiver IC. - Bug fix to help the transceiver ICs to fulfill the system requirements. - Increase the dynamic range of the power handling. Infineon Technologies is the leading company with broad product portfolio to offer high performance SiGe:C bipolar transistor LNAs and MMIC LNAs for various wireless applications by using the industrial standard silicon process. The MMIC LNA portfolio includes: - New generation single band LTE LNAs like BGA7H1N6 for high-band (HB, 2300-2700 MHz), BGA7M1N6 for mid-band (MB, 1805-2200 MHz) and BGA7L1N6 for low-band (LB, 728-960 MHz) are available. - New generation LTE LNA Banks are quad-band. Currently there are six different types of these new LTE LNAs which are shown in Table 2. Each LNA bank combines four various bands LNA from the high-band (HB, 2300-2700 MHz), mid-band (MB, 1805-2200 MHz) and Application Note AN351, Rev. 1.0 7 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Introduction low-band (LB, 728-960 MHz). Two of the four LNAs in one LNA bank can be turned on at the same time to support carrier aggregassion. The broad product portfolio with highest integration and best features in noise figure and flexible band selection helps designers to design mobile phones and data cards with outstanding performance. Therefore Infineon LNAs and LNA banks are widely used by mobile phone vendors. Table 2 Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications Frequency Range 728 MHz–960 MHz 1805MHz–2200MHz 2300 MHz–2690 MHz Comment Single-Band LNA BGA7L1N6 1X BGA7M1N6 1X BGA7L1N6 Quad-Band LNA bank 1X BGM7MLLH4L12 1X 2X 1X BGM7LMHM4L12 1X 2X 1X 1X 3X BGM7HHMH4L12 BGM7MLLM4L12 2X 2X BGM7LLHM4L12 2X 1X BGM7LLMM4L12 2X 2X 1X In addition, the older generation of LTE LNAs are featured with gain switching functions which is often helpful for the cases that string or weak signal environment could happen in the field. Table 3 shows the abailable band combinations: - Single-band LNAs like BGA777L7 / BGA777N7 for high-band (2300-2700 MHz), BGA711L7 / BGA711N7 for mid-band (MB, 1700-2300 MHz) and BGA751L7 / BGA751N7, BGA728L7/BGA728N7, BGA713L7/BGA713N7 for low-band (LB, 700-1000 MHz) are available. - Dual-band LNA BGA771L16 supports 1x mid-band (MB, 1700-2300 MHz) and 1x low-band (LB, 700-1000 MHz). - Triple-band LNAs BGA734N16, BGA735N16 and BGA736N16 are available to cover the most bands. All of the three triple-band LNAs can support designs covering 2x high-bands and 1x low-band. Application Note AN351, Rev. 1.0 8 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) - Both BGA748N16 and BGA749N16 are quad-band LNAs. BGA748N16 can cover 2x highand 2x low-bands and BGA749N16 can cover 1x high-band and 3x low-bands. Table 3 Infineon Product Portfolio of LNAs for 3G and 4G Applications Frequency Range 700-1000 MHz 1700-2200 MHz 2100-2700 MHz Comment Single-Band LNA BGA711N7/L7 BGA751N7/L7 1X 1X BGA777N7/L7 1X BGA728L7/N7 1X BGA713L7/N7 Dual-Band LNA 1X BGA771L16 Triple-Band LNA 1X 1X BGA734L16 1X 1X 1X BGA735N16 1X 1X 1X BGA736N16 Quad-band LNA 1X 1X 1X BGA748N16 2X 1X 1X BGA749N16 3X Application Note AN351, Rev. 1.0 1X 9 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) BGA7L1N6 Overview 2 BGA7L1N6 Overview 2.1 Features • Insertion power gain: 13.3 dB • Low noise figure: 0.90 dB • Low current consumption: 44 mA • Operating frequencies: 716-960 MHz • Supply voltage: 1.5 V to 3.6 V • Digital on/off switch (1 V logic high level) • Ultra small TSNP-6-2 leadless package (footprint: 0.7x1.1 mm2) • B7HF Silicon Germanium technology • RF output internally matched to 50 Ω • Only 1 external SMD component necessary • 2 kV HBM ESD protection (including AI-pin) • Pb-free (RoHS compliant) package 2.2 Figure 2 BGA7L1N6 in TSNP-6-2 Description The BGA7L1N6 is a front-end low noise amplifier for LTE applications, which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.3 dB gain and 0.90 dB noise figure at a current consumption of 4.9 mA in the application configuration described in Chapter 3. The BGA7L1N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Application Note AN351, Rev. 1.0 10 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) BGA7L1N6 Overview Figure 3 Equivalent Circuit of BGA7L1N6 Figure 4 Package and Pin Connections of BGA7L1N6 Application Note AN351, Rev. 1.0 11 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) BGA7L1N6 Overview Figure 5 Table 4 Footprint Recommendation of BGA7L1N6 Pin Assignment of BGA7L1N6 Pin No. Symbol Function 1 GND Ground 2 VCC Supply voltage 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power on control Application Note AN351, Rev. 1.0 12 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Application Circuit and Performance Overview 3 Application Circuit and Performance Overview Device: Application: BGA7L1N6 Single Band LTE LNA BGA7L1N6 Supporting Band-5 (869-894 MHz) Using 0201 Components PCB Marking: BGA7x1N6 V1.0 3.1 Summary of Measurement Results Table 5 Electrical Characteristics at Room Temperature (TA = 25 °C) for Band-5 (869-894 MHz), VCC = 1.8 V, VEN = 1.8 V, Parameter Symbol Value Unit DC Voltage Vcc 1.8 V DC Current Icc 4.5 mA Frequency Range Freq 869 882 894 MHz Gain G 12.4 12.6 12.8 dB Noise Figure NF 1.07 1.08 1.09 dB Input Return Loss RLin 16.7 19.2 22 dB Output Return Loss RLout 10.7 11.8 12.9 dB Reverse Isolation IRev 22 22 22 dB Input P1dB IP1dB -7.2 -9.3 -8.5 dBm Output P1dB OP1dB 4.2 2.3 3.3 dBm Input IP3 IIP3 0.5 dBm Output IP3 OIP3 13.1 dBm Stability k >1 -- Application Note AN351, Rev. 1.0 13 / 27 Comment/Test Condition Loss of SMA and line of 0.03 dB is substracted Power @ Input: -30 dBm f1=881 MHz, f2=882 MHz Measured up to 10 GHz 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Application Circuit and Performance Overview Table 6 Electrical Characteristics at Room Temperature (TA = 25 °C) for Band-5 (869-894 MHz), VCC = 2.8 V, VEN = 2.8 V, Parameter Symbol Value Unit DC Voltage Vcc 2.8 V DC Current Icc 4.6 mA Frequency Range Freq 869 882 894 MHz Gain G 12.4 12.6 12.8 dB Noise Figure NF 1.07 1.07 1.08 Input Return Loss RLin 15.3 17.1 19.2 dB Output Return Loss RLout 10 10.9 11.9 dB Reverse Isolation IRev 23 22 22 dB Input P1dB IP1dB -4.6 -5.8 -6.5 dBm Output P1dB OP1dB 6.8 5.8 5.3 dBm Input IP3 IIP3 0.6 dBm Output IP3 OIP3 13.2 dBm Stability k >1 -- Application Note AN351, Rev. 1.0 14 / 27 dB Comment/Test Condition Loss of SMA and line of 0.03 dB is substracted Power @ Input: -30 dBm f1=881 MHz, f2=882 MHz Measured up to 10 GHz 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Application Circuit and Performance Overview 3.2 BGA7L1N6 as LTE LNA for Band-5 (869-894 MHz) This application note focuses on the Infineon’s Single-band LTE LNA BGA7L1N6 tuned for the band-5. It presents the performance of BGA7L1N6 with 1.8 V/2.8 V power supply with the operating current of 4.6 mA. The application circuit requires only one 0201 passive component. The component value is fine tuned for optimal noise figure, gain, input and output matching. It has a gain of 12.8 dB. The circuit achieves input return loss better than 15.3 dB, as well as output return loss better than 10 dB. At room temperature the noise figure is 1.1 dB (SMA and PCB losses are subtracted). Furthermore, the circuit is measured unconditionally stable till 10 GHz. At Band-5, using two tones spacing of 1 MHz, the output third order intercept point, OIP3 reaches 13.2 dBm. Input P1dB of the BGA7L1N6 LNA is about –4.6 dBm for 894 MHz. All the measurements are done with the standard evaluation board presented at the end of this application note. Application Note AN351, Rev. 1.0 15 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) 3.3 Schematics and Bill-of-Materials Figure 6 Schematics of the BGA7L1N6 Application Circuit Table 7 Symbol Bill-of-Materials Value Unit Size Manufacturer C1 (optional) 1 nF 0201 Various DC block C2 100 nF 0201 Various RF to ground L1 18 nH 0201 Murata LQP series Input matching N1 BGA7L1N6 TSNP-6-2 Infineon SiGe LNA Application Note AN351, Rev. 1.0 16 / 27 Comment 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs 4 Measurement Graphs Insertion Power Gain (Narrowband) 14 Vcc=1.8 V Vcc=2.8 V S21 (dB) 13.5 0.869 GHz 12.426 dB 13 0.894 GHz 12.785 dB 0.882 GHz 12.637 dB 0.894 GHz 12.775 dB 12.5 0.882 GHz 12.639 dB 12 0.869 GHz 12.444 dB 11.5 0.8 Figure 7 0.85 0.9 Frequency (GHz) 0.95 1 Insertion Power Gain (Narrowband) of the BGA7L1N6 for Band-5 Applications Insertion Power Gain (Wideband) 30 Vcc=1.8 V 0.869 GHz 12.43 dB 20 Vcc=2.8 V S21 (dB) 0.894 GHz 12.78 dB 10 0.882 GHz 12.64 dB 0 -10 -20 0 Figure 8 1 2 3 Frequency (GHz) 4 5 6 Insertion Power Gain (Wideband) of the BGA7L1N6 for Band-5 Applications Application Note AN351, Rev. 1.0 17 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs Noise Figure 1.13 Vcc=1.8 V Vcc=2.8 V 1.11 0.882 GHz 1.08 NF (dB) 0.869 GHz 1.07 0.894 GHz 1.09 1.09 1.07 0.882 GHz 1.07 1.05 0.894 GHz 1.08 1.03 0.85 Figure 9 0.86 0.87 0.88 Frequency (GHz) 0.89 0.9 Noise Figure of the BGA7L1N6 for Band-5 Applications Input Return Loss -5 Vcc=1.8 V Vcc=2.8 V 0.869 GHz -15.27 dB -10 S11 (dB) 0.882 GHz -17.14 dB 0.869 GHz -16.73 dB -15 0.894 GHz -19.24 dB 0.882 GHz -19.15 dB -20 0.894 GHz -22.04 dB -25 0.8 Figure 10 0.85 0.9 Frequency (GHz) 0.95 1 Input Matching of the BGA7L1N6 for Band-5 Applications Application Note AN351, Rev. 1.0 18 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs 1.0 Swp Max 1GHz Vcc=1.8 V 2. 0 0. 6 0.8 Input Return Loss (Smith Chart) Vcc=2.8 V 0. 10.0 5.0 4.0 3.0 2.0 1.0 0.6 0.2 0.8 0.869 GHz r 1.08 x -0.35 0 0.869 GHz r 1.05 x -0.30 0 Figure 11 Swp Min 0.8GHz -1.0 -0.8 -0 .6 -2 .0 .0 .4 .0 -3 0.2 0 0.882 GHz10 r 1.09 x -0.28 2 -0 0 5.0 -4 . 0.882 GHz r 1.05 x -0.22 4. -10.0 0.4 0.894 GHz r 1.06 x -0.15 .0 -5. 4 -0. 0.894 GHz 3 r 1.09 x -0.21 Input Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications Output Return Loss -5 0.869 GHz -10.03 dB S22 (dB) -10 Vcc=1.8 V 0.869 GHz -10.71 dB -15 0.882 GHz -11.75 dB Vcc=2.8 V 0.882 GHz -10.93 dB 0.894 GHz -11.87 dB 0.894 GHz -12.85 dB -20 -25 0.8 Figure 12 0.85 0.9 Frequency (GHz) 0.95 1 Output Matching of the BGA7L1N6 for Band-5 Applications Application Note AN351, Rev. 1.0 19 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs 0 4. 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 .0 -2 Swp Min 0.8GHz -1.0 -0.8 .6 0.869 GHz r 0.55 x -0.04 .0 -0 0.882 GHz r 0.59 x -0.00 -3 0.4 10.0 0.894 GHz r 0.63 x 0.02 0 .4 0 5.0 0 0.2 0.2 0 -10.0 4 Figure 13 3. 0.894 GHz r 0.60 x 0.04 0.869 GHz r 0.52 2 -0. x -0.03 -0 2. Vcc=1.8 V 0. 0.882 GHz r 0.56 x 0.00 0 Vcc=1.8 V -4 . 0. 6 Swp Max 1GHz -5. 0.8 1.0 Output Return Loss (Smith Chart) Output Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications Reverse Isolation -20 0.894 GHz -22 dB -21 S12 (dB) 0.882 GHz -22 dB -22 0.894 GHz -22 dB 0.869 GHz -22 dB 0.882 GHz -22 dB -23 0.869 GHz -23 dB -24 Vcc=1.8 V Vcc=2.8 V -25 0.8 Figure 14 0.85 0.9 Frequency (GHz) 0.95 1 Reverse Isolation of the BGA7L1N6 for Band-5 Applications Application Note AN351, Rev. 1.0 20 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs Stability k Factor 3 Vcc=1.8 V Vcc=2.8 V 2.5 2 1.5 1 0.5 0 0 Figure 15 2 4 6 Frequency (GHz) 8 10 Stability K-factor of the BGA7L1N6 for Band-5 Applications Stability Mu1 Factor 2.5 Vcc=1.8 V Vcc=2.8 V 2 1.5 1 0.5 0 Figure 16 2 4 6 Frequency (GHz) 8 10 Stability Mu1-factor of the BGA7L1N6 for Band-5 Applications Application Note AN351, Rev. 1.0 21 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs Stability Mu2 Factor 2.5 Vcc=1.8 V Vcc=2.8 V 2 1.5 1 0.5 0 Figure 17 2 4 6 Frequency (GHz) 8 10 Stability Mu2-factor of the BGA7L1N6 for Band-5 Applications Input 1dB Compression Point with Vcc=1.8 V 14 -30 dBm 12.754 869 MHz -30 dBm 12.613 882 MHz 894 MHz S21 (dB) 13 -7.202 dBm 11.744 -30 dBm 12.409 12 -8.461 dBm 11.654 -9.26 dBm 11.476 11 10 -30 Figure 18 -25 -20 -15 Power (dBm) -10 -5 0 Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V Application Note AN351, Rev. 1.0 22 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs Input 1dB Compression Point with Vcc=2.8 V 14 -30 dBm 12.764 882 MHz -30 dBm 12.608 13 S21 (dB) 869 MHz 894 MHz -4.649 dBm 11.758 -30 dBm 12.4 12 -6.533 dBm 11.4 11 -5.849 dBm 11.608 10 -30 Figure 19 -25 -20 -15 Power (dBm) -10 -5 0 Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V Intermodulation for Band-5 with Vcc=1.8 V 0 0.881 GHz -17.44 Power (dBm) -20 0.882 GHz -17.39 -40 -60 0.883 GHz -78.91 0.88 GHz -78.38 -80 -100 -120 0.879 Figure 20 0.88 0.881 0.882 Frequency (GHz) 0.883 0.884 rd Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V Application Note AN351, Rev. 1.0 23 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Measurement Graphs Intermodulation for Band-5 with Vcc=2.8 V 0 Power (dBm) -20 0.882 GHz -17.41 0.881 GHz -17.45 -40 -60 0.883 GHz -79.06 0.88 GHz -78.73 -80 -100 -120 0.879 Figure 21 0.88 0.881 0.882 Frequency (GHz) 0.883 0.884 rd Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V Application Note AN351, Rev. 1.0 24 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Evaluation Board and Layout Information 5 Evaluation Board and Layout Information In this application note, the following PCB is used: PCB Marking: BGA7x1N6 V1.0 PCB material: Ro4003 r of PCB material: 3.4 Figure 22 Picture of Evaluation Board (overview) , BGA7L1N6 V1.0 Figure 23 Picture of Evaluation Board (detailed view) Vias RO4003, 0.2mm Copper 35µm Figure 24 FR4, 0.8mm PCB Layer Stack Application Note AN351, Rev. 1.0 25 / 27 2013-11-13 BGA7L1N6 Single-Band LTE LNA for LTE Band-5 (869-894 MHz) Authors 6 Authors Moakhkhrul Islam, RF Application Engineer of Business Unit “RF and Protection Devices” Dr. Fang Jie, RF Application Engineer of Business Unit “RF and Protection Devices” 7 Remark The graphs are generated with the simulation software AWR Microwave Office®. Application Note AN351, Rev. 1.0 26 / 27 2013-11-13 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN351