AN351 - Infineon

B GA 7L1 N 6
Singl e - Ba nd L TE L NA
Singl e B and LT E LN A B G A7L1 N 6
Sup por tin g Ban d - 5 (869 -8 94 MHz )
Using 02 0 1 C o mpo n ents
Applic atio n N ote A N 351
Revision: Rev. 1.0
2013-11-13
RF and P r otecti on D evic es
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Application Note AN351
Revision History: 2013-11-13
Previous Revision:
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,
TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by
AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS
Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of
Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems
Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc.
SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software
Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc.
TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™
of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Application Note AN351, Rev. 1.0
2 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Introduction
Table of Content
1
1.1
1.2
1.3
Introduction ........................................................................................................................................ 4
Introduction About 3G and 4G ............................................................................................................. 4
Applications .......................................................................................................................................... 6
Infineon LNAs for 3G, 4G LTE and LTE-A Applications ...................................................................... 7
2
2.1
2.2
BGA7L1N6 Overview ....................................................................................................................... 10
Features ............................................................................................................................................. 10
Description ......................................................................................................................................... 10
3
3.1
3.2
3.3
Application Circuit and Performance Overview ............................................................................ 13
Summary of Measurement Results .................................................................................................... 13
BGA7L1N6 as LTE LNA for Band-5 (869-894 MHz) .......................................................................... 15
Schematics and Bill-of-Materials ........................................................................................................ 16
4
Measurement Graphs ...................................................................................................................... 17
5
Evaluation Board and Layout Information .................................................................................... 25
6
Authors .............................................................................................................................................. 26
7
Remark .............................................................................................................................................. 26
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Figure 24
Example of Application Diagram of RF Front-End for 3G and 4G Systems. ....................................... 6
BGA7L1N6 in TSNP-6-2 .................................................................................................................... 10
Equivalent Circuit of BGA7L1N6 ........................................................................................................ 11
Package and Pin Connections of BGA7L1N6 .................................................................................... 11
Footprint Recommendation of BGA7L1N6 ........................................................................................ 12
Schematics of the BGA7L1N6 Application Circuit ............................................................................. 16
Insertion Power Gain (Narrowband) of the BGA7L1N6 for Band-5 Applications .............................. 17
Insertion Power Gain (Wideband) of the BGA7L1N6 for Band-5 Applications ................................. 17
Noise Figure of the BGA7L1N6 for Band-5 Applications ................................................................... 18
Input Matching of the BGA7L1N6 for Band-5 Applications ................................................................ 18
Input Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications ......................................... 19
Output Matching of the BGA7L1N6 for Band-5 Applications ............................................................. 19
Output Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications ...................................... 20
Reverse Isolation of the BGA7L1N6 for Band-5 Applications ............................................................ 20
Stability K-factor of the BGA7L1N6 for Band-5 Applications ............................................................. 21
Stability Mu1-factor of the BGA7L1N6 for Band-5 Applications ......................................................... 21
Stability Mu2-factor of the BGA7L1N6 for Band-5 Applications ......................................................... 22
Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V ............... 22
Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V ............... 23
rd
Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V ......................... 23
rd
Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V ......................... 24
Picture of Evaluation Board (overview) , BGA7L1N6 V1.0 ............................................................... 25
Picture of Evaluation Board (detailed view) ....................................................................................... 25
PCB Layer Stack ................................................................................................................................ 25
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
LTE Band Assignment ......................................................................................................................... 4
Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications ............................................. 8
Infineon Product Portfolio of LNAs for 3G and 4G Applications .......................................................... 9
Pin Assignment of BGA7L1N6 ........................................................................................................... 12
Electrical Characteristics at Room Temperature (TA = 25 °C) for ..................................................... 13
Electrical Characteristics at Room Temperature (TA = 25 °C) for ...................................................... 14
Bill-of-Materials................................................................................................................................... 16
Application Note AN351, Rev. 1.0
3 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Introduction
1
Introduction
1.1
Introduction About 3G and 4G
The mobile technologies for smartphones have seen tremendous growth in recent years. The
data rate required from mobile devices has increased significantly over the evolution modern
mobile technologies, starting from the first 3G/3.5G technologies (UMTS & WCDMA, HSPA &
HSPA+) to the recently 4G LTE-Advanced (LTE-A). LTE-A can support data rates of up to 1
Gbps.
Advanced technologies such as diversity Multiple Input Multiple Output (MIMO) and Carrier
Aggregation (CA) are adopted to achieve such higher data rate requirements. MIMO
technology, commonly referred as the diversity path in smartphones, has attracted attention
for the significant increasement in data throughput and link range without additional
bandwidth or increased transmit power. The technology supports scalable channel
bandwidth, between 1.4 and 20 MHz. The ability of 4G LTE to support bandwidths up to 20
MHz and to have more spectral efficiency by using high order modulation methods like QAM64 is of particular importance as the demand for higher wireless data speeds continues to
grow fast. Carrier aggregation used in LTE-Advanced combines up to 5 carriers and widens
bandwidths up to 100 MHz to increase the user rates, across FDD and TDD.
Countries all over the world have released various frequencies bands for the 4G
applications.Table 1 shows the band assignment for the LTE bands worldwide.
Table 1
Band No.
LTE Band Assignment
Uplink Frequency Range
Downlink Frequency Range
Comment
1
1920-1980 MHz
2110-2170 MHz
FDD
2
1850-1910 MHz
1930-1990 MHz
FDD
3
1710-1785 MHz
1805-1880 MHz
FDD
4
1710-1755 MHz
2110-2155 MHz
FDD
5
824-849 MHz
869-894 MHz
FDD
6
830-840 MHz
875-885 MHz
FDD
7
2500-2570 MHz
2620-2690 MHz
FDD
8
880-915 MHz
925-960 MHz
FDD
9
1749.9-1784.9 MHz
1844.9-1879.9 MHz
FDD
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Introduction
Table 1
Band No.
LTE Band Assignment
Uplink Frequency Range
Downlink Frequency Range
Comment
10
1710-1770 MHz
2110-2170 MHz
FDD
11
1427.9-1452.9 MHz
1475.9-1500.9 MHz
FDD
12
698-716 MHz
728-746 MHz
FDD
13
777-787 MHz
746-756 MHz
FDD
14
788-798 MHz
758-768 MHz
FDD
17
704-716 MHz
734-746 MHz
FDD
18
815-830 MHz
860-875 MHz
FDD
19
830-845 MHz
875-890 MHz
FDD
20
832-862 MHz
791-821 MHz
FDD
21
1447.9-1462.9 MHz
1495.9-1510.9 MHz
FDD
22
3410-3500 MHz
3510-3600 MHz
FDD
23
2000-2020 MHz
2180-2200 MHz
FDD
24
1626.5-1660.5 MHz
1525-1559 MHz
FDD
25
1850-1915 MHz
1930-1995 MHz
FDD
26
814-849 MHz
859-894 MHz
FDD
27
807-824 MHz
852-869 MHz
FDD
28
703-748 MHz
758-803 MHz
FDD
29
N/A
716-728 MHz
FDD
33
1900-1920 MHz
TDD
34
2010-2025 MHz
TDD
35
1850-1910 MHz
TDD
36
1930-1990 MHz
TDD
37
1910-1930 MHz
TDD
38
2570-2620 MHz
TDD
39
1880-1920 MHz
TDD
40
2300-2400 MHz
TDD
41
2496-2690 MHz
TDD
42
3400-3600 MHz
TDD
43
3600-3800 MHz
TDD
44
703-803 MHz
TDD
In order to cover all the bands from different countries in a unique device, mobile phones and
data cards are usually equipped more bands and band combinations. Some typical examples
are quad-band combinations of band 1/2/5/8, 1/3/5/7 and 3/7/5/17. The frequency bands
used by TD-LTE are 3.4–3.6 GHz in Australia and UK, 2.57−2.62 GHz in the US and China,
2.545-2.575 GHz in Japan, and 2.3–2.4 GHz in India and Australia.
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Introduction
1.2
Applications
Figure 1 shows an example of the block diagram of the front-end of a 4G modem. A SPnT
switch connects one side the antenna and several duplexers for different 4G bands on the
other side. Every duplexer is connected to the transmitting (TX) and receiving (RX) paths of
each band. The external LNA, here for example Infineon single-band LNA BGA7L1N6, is
placed on the RX path between the duplex and the bandpass SAW filter. The output of the
SAW filter is connected to the receiver input of the transceiver IC.
Depending on the number of bands designed in a device, various numbers of LNAs are
required in a system. Recently, even mobile devices with 5 modes 13 bands are under
discussion. Not only for the main pathes, but also for the diversity pathes, the external LNAs
are widely used to boost end user experience while using mobile devices for video and audio
streaming.
Besides low noise amplifiers, Infineon Technologies also offers solutions for high power
highly linear antenna switches, band switches as well as power detection diodes for power
amplifiers.
Figure 1
Example of Application Diagram of RF Front-End for 3G and 4G Systems.
Application Note AN351, Rev. 1.0
6 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Introduction
1.3
Infineon LNAs for 3G, 4G LTE and LTE-A Applications
With the increasing wireless data speed and with the extended link distance of mobile
phones and 4G data cards, the requirements on the sensitivity are much higher. Infineon
offers different kind of low noise amplifiers (LNAs) to support the customers for mobile
phones and data cards of 4G LTE and LTE-A to improve their system performance to meet
the requirements coming from the networks/service providers.
The benefits to use external LNAs in equipment for 4G LTE and LTE-A applications are:
- Flexible design to place the front-end components: due to the size constraint, the modem
antenna and the front-end can not be always put close to the transceiver IC. The path loss
in front of the integrated LNA on the transceiver IC increases the system noise figure
noticeably. An external LNA physically close to the antenna can help to eliminate the path
loss and reduce the system noise figure. Therefore the sensitivity can be improved by
several dB.
- Support RX carrier aggregation where two LNAs can be tuned on at the same time.
- Boost the sensitivity by reducing the system noise figure: external LNA has lower noise
figure than the integrated LNA on the transceiver IC.
- Bug fix to help the transceiver ICs to fulfill the system requirements.
- Increase the dynamic range of the power handling.
Infineon Technologies is the leading company with broad product portfolio to offer high
performance SiGe:C bipolar transistor LNAs and MMIC LNAs for various wireless
applications by using the industrial standard silicon process. The MMIC LNA portfolio
includes:
- New generation single band LTE LNAs like BGA7H1N6 for high-band (HB, 2300-2700
MHz), BGA7M1N6 for mid-band (MB, 1805-2200 MHz) and BGA7L1N6 for low-band (LB,
728-960 MHz) are available.
- New generation LTE LNA Banks are quad-band. Currently there are six different types of
these new LTE LNAs which are shown in Table 2. Each LNA bank combines four various
bands LNA from the high-band (HB, 2300-2700 MHz), mid-band (MB, 1805-2200 MHz) and
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Introduction
low-band (LB, 728-960 MHz). Two of the four LNAs in one LNA bank can be turned on at the
same time to support carrier aggregassion.
The broad product portfolio with highest integration and best features in noise figure and
flexible band selection helps designers to design mobile phones and data cards with
outstanding performance. Therefore Infineon LNAs and LNA banks are widely used by
mobile phone vendors.
Table 2
Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications
Frequency Range
728 MHz–960 MHz
1805MHz–2200MHz
2300 MHz–2690 MHz
Comment
Single-Band LNA
BGA7L1N6
1X
BGA7M1N6
1X
BGA7L1N6
Quad-Band LNA bank
1X
BGM7MLLH4L12
1X
2X
1X
BGM7LMHM4L12
1X
2X
1X
1X
3X
BGM7HHMH4L12
BGM7MLLM4L12
2X
2X
BGM7LLHM4L12
2X
1X
BGM7LLMM4L12
2X
2X
1X
In addition, the older generation of LTE LNAs are featured with gain switching functions
which is often helpful for the cases that string or weak signal environment could happen in
the field. Table 3 shows the abailable band combinations:
- Single-band LNAs like BGA777L7 / BGA777N7 for high-band (2300-2700 MHz), BGA711L7
/ BGA711N7 for mid-band (MB, 1700-2300 MHz) and BGA751L7 / BGA751N7,
BGA728L7/BGA728N7, BGA713L7/BGA713N7 for low-band (LB, 700-1000 MHz) are
available.
- Dual-band LNA BGA771L16 supports 1x mid-band (MB, 1700-2300 MHz) and 1x low-band
(LB, 700-1000 MHz).
- Triple-band LNAs BGA734N16, BGA735N16 and BGA736N16 are available to cover the
most bands. All of the three triple-band LNAs can support designs covering 2x high-bands
and 1x low-band.
Application Note AN351, Rev. 1.0
8 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
- Both BGA748N16 and BGA749N16 are quad-band LNAs. BGA748N16 can cover 2x highand 2x low-bands and BGA749N16 can cover 1x high-band and 3x low-bands.
Table 3
Infineon Product Portfolio of LNAs for 3G and 4G Applications
Frequency Range
700-1000 MHz
1700-2200 MHz
2100-2700 MHz
Comment
Single-Band LNA
BGA711N7/L7
BGA751N7/L7
1X
1X
BGA777N7/L7
1X
BGA728L7/N7
1X
BGA713L7/N7
Dual-Band LNA
1X
BGA771L16
Triple-Band LNA
1X
1X
BGA734L16
1X
1X
1X
BGA735N16
1X
1X
1X
BGA736N16
Quad-band LNA
1X
1X
1X
BGA748N16
2X
1X
1X
BGA749N16
3X
Application Note AN351, Rev. 1.0
1X
9 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
BGA7L1N6 Overview
2
BGA7L1N6 Overview
2.1
Features
• Insertion power gain: 13.3 dB
• Low noise figure: 0.90 dB
• Low current consumption: 44 mA
• Operating frequencies: 716-960 MHz
• Supply voltage: 1.5 V to 3.6 V
• Digital on/off switch (1 V logic high level)
• Ultra small TSNP-6-2 leadless package (footprint:
0.7x1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2 kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package
2.2
Figure 2
BGA7L1N6 in TSNP-6-2
Description
The BGA7L1N6 is a front-end low noise amplifier for LTE applications, which covers a wide
frequency range from 716 MHz to 960 MHz. The LNA provides 13.3 dB gain and 0.90 dB
noise figure at a current consumption of 4.9 mA in the application configuration described in
Chapter 3. The BGA7L1N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium
technology. It operates from 1.5 V to 3.6 V supply voltage.
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
BGA7L1N6 Overview
Figure 3
Equivalent Circuit of BGA7L1N6
Figure 4
Package and Pin Connections of BGA7L1N6
Application Note AN351, Rev. 1.0
11 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
BGA7L1N6 Overview
Figure 5
Table 4
Footprint Recommendation of BGA7L1N6
Pin Assignment of BGA7L1N6
Pin No.
Symbol
Function
1
GND
Ground
2
VCC
Supply voltage
3
AO
LNA output
4
GND
Ground
5
AI
LNA input
6
PON
Power on control
Application Note AN351, Rev. 1.0
12 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Application Circuit and Performance Overview
3
Application Circuit and Performance Overview
Device:
Application:
BGA7L1N6
Single Band LTE LNA BGA7L1N6 Supporting Band-5 (869-894
MHz) Using 0201 Components
PCB Marking: BGA7x1N6 V1.0
3.1
Summary of Measurement Results
Table 5
Electrical Characteristics at Room Temperature (TA = 25 °C) for
Band-5 (869-894 MHz), VCC = 1.8 V, VEN = 1.8 V,
Parameter
Symbol
Value
Unit
DC Voltage
Vcc
1.8
V
DC Current
Icc
4.5
mA
Frequency Range
Freq
869
882
894
MHz
Gain
G
12.4
12.6
12.8
dB
Noise Figure
NF
1.07
1.08
1.09
dB
Input Return Loss
RLin
16.7
19.2
22
dB
Output Return Loss
RLout
10.7
11.8
12.9
dB
Reverse Isolation
IRev
22
22
22
dB
Input P1dB
IP1dB
-7.2
-9.3
-8.5
dBm
Output P1dB
OP1dB
4.2
2.3
3.3
dBm
Input IP3
IIP3
0.5
dBm
Output IP3
OIP3
13.1
dBm
Stability
k
>1
--
Application Note AN351, Rev. 1.0
13 / 27
Comment/Test Condition
Loss of SMA and line of 0.03
dB is substracted
Power @ Input: -30 dBm
f1=881 MHz, f2=882 MHz
Measured up to 10 GHz
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Application Circuit and Performance Overview
Table 6
Electrical Characteristics at Room Temperature (TA = 25 °C) for
Band-5 (869-894 MHz), VCC = 2.8 V, VEN = 2.8 V,
Parameter
Symbol
Value
Unit
DC Voltage
Vcc
2.8
V
DC Current
Icc
4.6
mA
Frequency Range
Freq
869
882
894
MHz
Gain
G
12.4
12.6
12.8
dB
Noise Figure
NF
1.07
1.07
1.08
Input Return Loss
RLin
15.3
17.1
19.2
dB
Output Return Loss
RLout
10
10.9
11.9
dB
Reverse Isolation
IRev
23
22
22
dB
Input P1dB
IP1dB
-4.6
-5.8
-6.5
dBm
Output P1dB
OP1dB
6.8
5.8
5.3
dBm
Input IP3
IIP3
0.6
dBm
Output IP3
OIP3
13.2
dBm
Stability
k
>1
--
Application Note AN351, Rev. 1.0
14 / 27
dB
Comment/Test Condition
Loss of SMA and line of 0.03
dB is substracted
Power @ Input: -30 dBm
f1=881 MHz, f2=882 MHz
Measured up to 10 GHz
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Application Circuit and Performance Overview
3.2
BGA7L1N6 as LTE LNA for Band-5 (869-894 MHz)
This application note focuses on the Infineon’s Single-band LTE LNA BGA7L1N6 tuned for the
band-5. It presents the performance of BGA7L1N6 with 1.8 V/2.8 V power supply with the
operating current of 4.6 mA.
The application circuit requires only one 0201 passive component. The component value is fine
tuned for optimal noise figure, gain, input and output matching. It has a gain of 12.8 dB. The
circuit achieves input return loss better than 15.3 dB, as well as output return loss better than 10
dB. At room temperature the noise figure is 1.1 dB (SMA and PCB losses are subtracted).
Furthermore, the circuit is measured unconditionally stable till 10 GHz. At Band-5, using two
tones spacing of 1 MHz, the output third order intercept point, OIP3 reaches 13.2 dBm. Input
P1dB of the BGA7L1N6 LNA is about –4.6 dBm for 894 MHz. All the measurements are done
with the standard evaluation board presented at the end of this application note.
Application Note AN351, Rev. 1.0
15 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
3.3
Schematics and Bill-of-Materials
Figure 6
Schematics of the BGA7L1N6 Application Circuit
Table 7
Symbol
Bill-of-Materials
Value
Unit
Size
Manufacturer
C1 (optional)
1
nF
0201
Various
DC block
C2
100
nF
0201
Various
RF to ground
L1
18
nH
0201
Murata LQP series
Input matching
N1
BGA7L1N6
TSNP-6-2
Infineon
SiGe LNA
Application Note AN351, Rev. 1.0
16 / 27
Comment
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
4
Measurement Graphs
Insertion Power Gain (Narrowband)
14
Vcc=1.8 V
Vcc=2.8 V
S21 (dB)
13.5
0.869 GHz
12.426 dB
13
0.894 GHz
12.785 dB
0.882 GHz
12.637 dB
0.894 GHz
12.775 dB
12.5
0.882 GHz
12.639 dB
12
0.869 GHz
12.444 dB
11.5
0.8
Figure 7
0.85
0.9
Frequency (GHz)
0.95
1
Insertion Power Gain (Narrowband) of the BGA7L1N6 for Band-5 Applications
Insertion Power Gain (Wideband)
30
Vcc=1.8 V
0.869 GHz
12.43 dB
20
Vcc=2.8 V
S21 (dB)
0.894 GHz
12.78 dB
10
0.882 GHz
12.64 dB
0
-10
-20
0
Figure 8
1
2
3
Frequency (GHz)
4
5
6
Insertion Power Gain (Wideband) of the BGA7L1N6 for Band-5 Applications
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
Noise Figure
1.13
Vcc=1.8 V
Vcc=2.8 V
1.11
0.882 GHz
1.08
NF (dB)
0.869 GHz
1.07
0.894 GHz
1.09
1.09
1.07
0.882 GHz
1.07
1.05
0.894 GHz
1.08
1.03
0.85
Figure 9
0.86
0.87
0.88
Frequency (GHz)
0.89
0.9
Noise Figure of the BGA7L1N6 for Band-5 Applications
Input Return Loss
-5
Vcc=1.8 V
Vcc=2.8 V
0.869 GHz
-15.27 dB
-10
S11 (dB)
0.882 GHz
-17.14 dB
0.869 GHz
-16.73 dB
-15
0.894 GHz
-19.24 dB
0.882 GHz
-19.15 dB
-20
0.894 GHz
-22.04 dB
-25
0.8
Figure 10
0.85
0.9
Frequency (GHz)
0.95
1
Input Matching of the BGA7L1N6 for Band-5 Applications
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
1.0
Swp Max
1GHz
Vcc=1.8 V
2.
0
0.
6
0.8
Input Return Loss (Smith Chart)
Vcc=2.8 V
0.
10.0
5.0
4.0
3.0
2.0
1.0
0.6
0.2
0.8
0.869 GHz
r 1.08
x -0.35
0
0.869 GHz
r 1.05
x -0.30
0
Figure 11
Swp Min
0.8GHz
-1.0
-0.8
-0
.6
-2
.0
.0
.4
.0
-3
0.2
0
0.882 GHz10
r 1.09
x -0.28
2
-0
0
5.0
-4
.
0.882 GHz
r 1.05
x -0.22
4.
-10.0
0.4
0.894 GHz
r 1.06
x -0.15
.0
-5.
4
-0.
0.894 GHz 3
r 1.09
x -0.21
Input Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications
Output Return Loss
-5
0.869 GHz
-10.03 dB
S22 (dB)
-10
Vcc=1.8 V
0.869 GHz
-10.71 dB
-15
0.882 GHz
-11.75 dB
Vcc=2.8 V
0.882 GHz
-10.93 dB
0.894 GHz
-11.87 dB
0.894 GHz
-12.85 dB
-20
-25
0.8
Figure 12
0.85
0.9
Frequency (GHz)
0.95
1
Output Matching of the BGA7L1N6 for Band-5 Applications
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
0
4.
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
.0
-2
Swp Min
0.8GHz
-1.0
-0.8
.6
0.869 GHz
r 0.55
x -0.04
.0
-0
0.882 GHz
r 0.59
x -0.00
-3
0.4
10.0
0.894 GHz
r 0.63
x 0.02
0
.4
0
5.0
0
0.2
0.2
0
-10.0
4
Figure 13
3.
0.894 GHz
r 0.60
x 0.04
0.869 GHz
r 0.52
2
-0. x -0.03
-0
2.
Vcc=1.8 V
0.
0.882 GHz
r 0.56
x 0.00
0
Vcc=1.8 V
-4
.
0.
6
Swp Max
1GHz
-5.
0.8
1.0
Output Return Loss (Smith Chart)
Output Matching (Smith Chart) of the BGA7L1N6 for Band-5 Applications
Reverse Isolation
-20
0.894 GHz
-22 dB
-21
S12 (dB)
0.882 GHz
-22 dB
-22
0.894 GHz
-22 dB
0.869 GHz
-22 dB
0.882 GHz
-22 dB
-23
0.869 GHz
-23 dB
-24
Vcc=1.8 V
Vcc=2.8 V
-25
0.8
Figure 14
0.85
0.9
Frequency (GHz)
0.95
1
Reverse Isolation of the BGA7L1N6 for Band-5 Applications
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
Stability k Factor
3
Vcc=1.8 V
Vcc=2.8 V
2.5
2
1.5
1
0.5
0
0
Figure 15
2
4
6
Frequency (GHz)
8
10
Stability K-factor of the BGA7L1N6 for Band-5 Applications
Stability Mu1 Factor
2.5
Vcc=1.8 V
Vcc=2.8 V
2
1.5
1
0.5
0
Figure 16
2
4
6
Frequency (GHz)
8
10
Stability Mu1-factor of the BGA7L1N6 for Band-5 Applications
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
Stability Mu2 Factor
2.5
Vcc=1.8 V
Vcc=2.8 V
2
1.5
1
0.5
0
Figure 17
2
4
6
Frequency (GHz)
8
10
Stability Mu2-factor of the BGA7L1N6 for Band-5 Applications
Input 1dB Compression Point with Vcc=1.8 V
14
-30 dBm
12.754
869 MHz
-30 dBm
12.613
882 MHz
894 MHz
S21 (dB)
13
-7.202 dBm
11.744
-30 dBm
12.409
12
-8.461 dBm
11.654
-9.26 dBm
11.476
11
10
-30
Figure 18
-25
-20
-15
Power (dBm)
-10
-5
0
Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
Input 1dB Compression Point with Vcc=2.8 V
14
-30 dBm
12.764
882 MHz
-30 dBm
12.608
13
S21 (dB)
869 MHz
894 MHz
-4.649 dBm
11.758
-30 dBm
12.4
12
-6.533 dBm
11.4
11
-5.849 dBm
11.608
10
-30
Figure 19
-25
-20
-15
Power (dBm)
-10
-5
0
Input 1dB Compression Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V
Intermodulation for Band-5 with Vcc=1.8 V
0
0.881 GHz
-17.44
Power (dBm)
-20
0.882 GHz
-17.39
-40
-60
0.883 GHz
-78.91
0.88 GHz
-78.38
-80
-100
-120
0.879
Figure 20
0.88
0.881
0.882
Frequency (GHz)
0.883
0.884
rd
Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=1.8 V
Application Note AN351, Rev. 1.0
23 / 27
2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Measurement Graphs
Intermodulation for Band-5 with Vcc=2.8 V
0
Power (dBm)
-20
0.882 GHz
-17.41
0.881 GHz
-17.45
-40
-60
0.883 GHz
-79.06
0.88 GHz
-78.73
-80
-100
-120
0.879
Figure 21
0.88
0.881
0.882
Frequency (GHz)
0.883
0.884
rd
Input 3 Intercept Point of the BGA7L1N6 for Band-5 Applications with Vcc=2.8 V
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Evaluation Board and Layout Information
5
Evaluation Board and Layout Information
In this application note, the following PCB is used:
PCB Marking: BGA7x1N6 V1.0
PCB material: Ro4003
r of PCB material: 3.4
Figure 22
Picture of Evaluation Board (overview) , BGA7L1N6 V1.0
Figure 23
Picture of Evaluation Board (detailed view)
Vias
RO4003, 0.2mm
Copper
35µm
Figure 24
FR4, 0.8mm
PCB Layer Stack
Application Note AN351, Rev. 1.0
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2013-11-13
BGA7L1N6
Single-Band LTE LNA for LTE Band-5 (869-894 MHz)
Authors
6
Authors
Moakhkhrul Islam, RF Application Engineer of Business Unit “RF and Protection Devices”
Dr. Fang Jie, RF Application Engineer of Business Unit “RF and Protection Devices”
7
Remark
The graphs are generated with the simulation software AWR Microwave Office®.
Application Note AN351, Rev. 1.0
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2013-11-13
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Published by Infineon Technologies AG
AN351