SIGC42T170R3GE IGBT3 Power Chip Features: 1700V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type VCE SIGC42T170R3GE 1700V This chip is used for: power module C Applications: drives G ICn Die Size Package 29A 6.5 x 6.46 mm2 sawn on foil E MECHANICAL PARAMETER Raster size 6.5 x 6.46 Emitter pad size (incl. gate pad) 4.27 x 4.27 mm Gate pad size Area total / active 2 1.18 x 1.09 42 / 28.7 Thickness 190 µm Wafer size 200 mm Max.possible chips per wafer Passivation frontside Pad metal Backside metal 641 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size Recommended storage environment 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IFAG IPC TD VLS, L7751M, L7751T, L7751E, Rev 1.0, 27.06.2014 SIGC42T170R3GE MAXIMUM RATINGS Parameter Symbol Value Unit 1700 V 1) A Collector-Emitter voltage, Tj=25 C VCE DC collector current, limited by Tj max IC Pulsed collector current, tp limited by Tj max Ic,puls 87 A Gate emitter voltage VGE 20 V Maximum junction and storage temperature Tvj,max , Tstg -55 ... +150 °C Short circuit data 2 ) VGE = 15V, VCC = 1200V, Tvj = 125°C tp,max 10 µs I C , m a x = 58A, V C E , m a x = 1700V, Tvj,op 125°C Reverse bias safe operating area 2 ) (RBSOA) 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer), Tj=25 C Value Parameter Symbol Conditions Unit min. typ. max. Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 1.5mA 1700 Collector-Emitter saturation voltage VCE(sat) VGE=15V, IC=29A 1.6 2 2.4 Gate-Emitter threshold voltage VGE(th) IC=1.2mA , VGE=VCE 5.2 5.8 6.4 Zero gate voltage collector current ICES VCE=1700V , VGE=0V 2 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 600 nA Integrated gate resistor RGint V 32 ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design / characterization) Parameter Symbol Conditions Value min. typ. Input capacitance Ciss V C E = 25 V , 2500 Output capacitance Coss V G E = 0V , 105 Reverse transfer capacitance Crss f =1 MH z 84 max. Unit Edited by INFINEON Technologies, IFAG IPC TD VLS, L7751M, L7751T, L7751E, Rev 1.0, 27.06.2014 pF SIGC42T170R3GE SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design / characterization) Parameter Symbol Turn-on delay time td(on) Rise time tr Conditions 1) T j =12 5 C V C C = 90 0 V, Value min. typ. max. Unit 400 50 I C = 29 A , Turn-off delay time td(off) Fall time tf 1) µs V G E = 0/ 15 V , 800 R G = 1 8 300 values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies, IFAG IPC TD VLS, L7751M, L7751T, L7751E, Rev 1.0, 27.06.2014 SIGC42T170R3GE CHIP DRAWING Edited by INFINEON Technologies, IFAG IPC TD VLS, L7751M, L7751T, L7751E, Rev 1.0, 27.06.2014 SIGC42T170R3GE FURTHER ELECTRICAL CHARACTERISTICS This chip data sheet refers to the device data sheet DESCRIPTION AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, IFAG IPC TD VLS, L7751M, L7751T, L7751E, Rev 1.0, 27.06.2014