SIGC100T60R3 3 IGBT Chip Features: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module C Applications: • drives G Chip Type VCE IC Die Size Package SIGC100T60R3 600V 200A 9.73 x 10.23 mm2 sawn on foil E Mechanical Parameter Raster size Emitter pad size (incl. gate pad) Gate pad size 9.73 x 10.23 ( 4.256 x 1.938 ) x 4 ( 4.256 x 2.356 ) x 4 mm2 1.615 x 0.817 Area total 99.5 Thickness 70 µm Wafer size 150 mm Max.possible chips per wafer Passivation frontside Pad metal Backside metal 126 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size Recommended storage environment ∅ 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 Maximum Ratings Parameter Symbol Value Unit 600 V 1) A Collector-Emitter voltage, Tvj =25 °C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max Ic,puls 600 A Gate emitter voltage VGE ±20 V Junction temperature range Tvj -40 ... +175 °C Operating junction temperature Tvj -40...+150 °C tSC 6 µs Short circuit data 2) VGE = 15V, VCC = 360V, Tvj = 150°C I C , m a x = 400A, V C E , m a x = 600V Reverse bias safe operating area 2 ) (RBSOA) Tvj ≤ 1 5 0 °C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterization Static Characteristic (tested on wafer), Tvj =25 °C Parameter Symbol Conditions Value min. typ. max. Unit Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 4 mA 600 Collector-Emitter saturation voltage VCEsat VGE=15V, IC=200A 1.05 1.45 1.85 Gate-Emitter threshold voltage VGE(th) IC=3.2mA , VGE=VCE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=600V , VGE=0V 10.1 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 600 nA Integrated gate resistor rG V Ω 2 Dynamic Characteristic (not subject to production test - verified by design / characterization), Tvj =25 °C Parameter Symbol Conditions Value min. typ. Input capacitance Cies V C E =25V, 12335 Output capacitance Coes VGE=0V, 769 Reverse transfer capacitance Cres f=1MHz 366 Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 max. Unit pF SIGC100T60R3 Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 Chip Drawing E E E E G E E T E E E = Emitter pad G = Gate pad T = Test pad do not contact Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date 2.1 Change max.possible chips per wafer 04.05.2010 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010