INFINEON Q67050-A4160-A001

SIGC61T60NC
IGBT Chip in NPT-technology
C
FEATURES:
• 600V NPT technology
• 100µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
Chip Type
VCE
SIGC61T60NC
600V
This chip is used for:
• IGBT-Modules
G
Applications:
• drives
ICn
75A
Die Size
Package
6.99 x 8.79 mm2
sawn on foil
E
Ordering Code
Q67050-A4160A001
MECHANICAL PARAMETER:
Raster size
6.99 x 8.79
Area total / active
61.44 / 53.7
Emitter pad size
2x( 2.98x5.48 )
Gate pad size
mm
2
0.8 x 1.5
Thickness
100
µm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
200
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7452-M, Edition 2, 28.11.2003
SIGC61T60NC
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
600
V
1)
A
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
Pulsed collector current, tp limited by Tjmax
Icpuls
225
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Value
Conditions
min.
Unit
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V, IC =3mA
600
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =75A
1.7
2.1
2.5
Gate-emitter threshold voltage
VGE(th)
IC =1.5mA, VGE=VCE
4.5
5.5
6.5
Zero gate voltage collector current
ICES
VCE=600V, VGE=0V
5.2
µA
Gate-emitter leakage current
IGES
VCE=0V, VGE=20V
210
nA
V
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Input capacitance
Ci s s
V C E= 2 5 V
-
3300
-
Output capacitance
Co s s
V GE= 0 V
-
tbd
-
Reverse transfer capacitance
Cr s s
f =1MHz
-
300
-
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
td(off)
Conditions
Tj= 1 2 5 ° C
Value
1)
min.
typ.
max.
-
65
-
I C =75A
-
25
-
V G E = ± 15V
-
170
-
-
35
-
V C C =300V
R G = 3Ω
Fall time
1)
tf
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7452-M, Edition 2, 28.11.2003
Unit
ns
SIGC61T60NC
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7452-M, Edition 2, 28.11.2003
SIGC61T60NC
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BSM 75 GD 60 DLC
Econo Pack2 short pin
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD HV3, L 7452-M, Edition 2, 28.11.2003