ES D1 01 - B 1 / ES D1 0 3 -B 1 Bi -di rect io nal Ultr a Low C apa c itanc e Transi ent Volt age S uppr es s io n Diod es f or Hig h Po w er RF Applic atio ns Applic atio n N ote A N 327 Revision: Rev. 1.0 2013-05-22 RF and P r otecti on D evic es Edition 2013-05-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Application Note AN327 Revision History: 2013-05-22 Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advanced Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN327, Rev. 1.0 3 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes List of Content, Figures and Tables Table of Content 1 1.1 1.2 Introduction ........................................................................................................................................ 5 Basics of Transient Voltage Suppression (TVS) Diodes...................................................................... 5 Requirements for Electrostatic Discharge Protection at RF ................................................................ 7 2 2.1 2.2 2.3 ESD101-B1 / ESD103-B1 Overview ................................................................................................... 9 Features ............................................................................................................................................... 9 Key Applications of ESD101-B1 / ESD103-B1 .................................................................................... 9 Description ........................................................................................................................................... 9 3 3.1 3.2 3.3 Application Circuit and Performance Overview ............................................................................ 10 Schematic Diagram ............................................................................................................................ 10 Linear and NON-linear measurement Setups .................................................................................... 10 Summary of Measurement Results .................................................................................................... 12 4 4.1 4.2 Measurement Graphs ...................................................................................................................... 13 Linear RF characteristic ..................................................................................................................... 13 Non-linear RF characteristic ............................................................................................................... 14 5 Authors .............................................................................................................................................. 16 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Typical application of the uni-directional ESD diode ............................................................................ 5 Typical application of the bi-directional ESD diode .............................................................................. 5 Principal characteristic of a uni-directional ESD protection device including snap-back ..................... 6 Principal characteristic of a bi-directional ESD protection device including snap-back ....................... 6 Operating principle of a low capacitance uni-directional ESD diode ................................................... 8 Bi-directional ESD diode, dedicated to protect RF lines ...................................................................... 8 Pin configuration and schematic diagram of ESD101-B1 / ESD103-B1 .............................................. 9 Schematics of the ESD101-B1 / ESD103-B1 Application Circuit ...................................................... 10 Set-Up for Harmonics Measurement.................................................................................................. 11 Test Set-Up for IMD Measurements .................................................................................................. 11 Insertion Loss: ESD101 vs. ESD103 @ 0V bias............................................................................... 13 Return Loss: ESD101 vs. ESD103 @ 0V bias ................................................................................... 13 Harmonics Generation in Low Band (f0=824MHz), ESD101-B1 ........................................................ 14 Harmonics Generation in Low Band (f0=824MHz), ESD103-B1 ........................................................ 14 Harmonics Generation in High Band (f0=1800MHz), ESD101-B1 ..................................................... 15 Harmonics Generation in High Band (f0=1800MHz), ESD103-B1 ..................................................... 15 Example of Intermodulation Measurement Data (ESD103-B1, Band V, fBlock=791.5 MHz) depending on the phase shifter adjustment ......................................................................................................... 16 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Feature overview of ESD101-B1 / ESD103-B1 ................................................................................... 9 Test Conditions for IMD Measurements............................................................................................. 11 Electrical Characteristics (at room temperature) ................................................................................ 12 Harmonics generation ........................................................................................................................ 12 Intermodulation distortion ESD101-B1 ............................................................................................... 12 Intermodulation distortion ESD103-B1 ............................................................................................... 12 Application Note AN327, Rev. 1.0 4 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Introduction 1 Introduction 1.1 Basics of Transient Voltage Suppression (TVS) Diodes ESD protection devices are strongly nonlinear. Their characteristic is split into a working area, where devices act as “open” or “isolator”, and a protection area, where devices act as a “short” or “conductor”. Basic characteristic of a uni-directional ESD protection device including snap-back is shown in Figure 3 with some abbreviations in common use. Physical principle of silicon based TVS diodes is the Zener or avalanche process wich drives the diode from an open into a short state, when operating voltage exceeds diode breakdown / trigger voltage VTrig. Silicon based TVS diodes offer following advantages over other approaches (MOV, MLV, polymer-based devices): Both uni-directional (Figure 1) and bi-directional (Figure 2)structures are available Rdyn can be kept very low even at low device capacitance Low trigger voltage, low “first overshoot” lasting only about 1ns Performance stable device, no degradation in leakage current performance even after multiple ESD strikes Best ESD protection performance for high speed applications in the GHz range as well as for low frequency applications A single uni-directional TVS diode structure is designed for a wanted signal between ~0V and “maximum working voltage” specified for the TVS diode. In case of a negative signal is applied between signal line and GND, the device will become conductive if the signal level exceeds about minus 0.5V (see Figure 3). Such a device can i.e. be used to protect a unipolar digital data signal (Figure 1). In order to protect bipolar signals, i.e. signals providing both positive and negative voltage values, a bidirectional TVS device is needed (Figure 2). The V-I curve of such device is symmetrical with respect to the origin (Figure 4), and the ESD protection capability is granted for a positive AND a negative ESD strike in the same way. A bi-directional TVS diode can be created by using two identical uni-directional TVS diodes connected in series, as shown in Figure 6, or by integrating the bi-directional functionality in one die. Wanted signal positive voltage swing!! Vp < V_maximal working voltage shunts positive and negative ESD strike node 1 Blocks positive wanted signal < V_maximal working voltage Uni-directional TVS diode Figure 1 node 2 for negative wanted signal: signal is clipped Typical application of the uni-directional ESD diode Wanted signal positive voltage swing!! +Vp < +V_maximal working voltage shunts positive and negative ESD strike node1 ~0V Blocks negative wanted signal < - V_maximal working voltage -Vp < -V_maximal working voltage Bi-directional TVS diode node2 Figure 2 Blocks positive wanted signal < + V_maximal working voltage Typical application of the bi-directional ESD diode Application Note AN327, Rev. 1.0 5 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Introduction VF Forward voltage IF Forward current IF RDYN VTrig Dynamic resistance Triggering reverse voltage IPP VR IR Reverse voltage VCL RDYN Reverse current VHold VRWM VHold VTrig VRWM VCL VR VFC IRWM VF ITrig IHold Holding reverse voltage Reverse working voltage maximum VFC Forward clamping voltage ITrig Triggering reverse current IHold Holding reverse current IPP IRWM RDYN Clamping voltage Peak pulse current Reverse working current maximum -IPP IR Diode_Characteristic_Curve_with_snapback_Uni-directional.vsd Figure 3 Principal characteristic of a uni-directional ESD protection device including snap-back Forward voltage VF IF IPP IF Forward current VR Reverse voltage IR Reverse current RDYN IHold ITrig VHold VTrig VR IRWM VRWM VCL VCL VRWM IRWM VHold VTrig ITrig IHold RDYN -IPP IR RDYN VTrig VCL VHold VRWM Dynamic resistance VFC Forward clamping voltage Triggering reverse voltage ITrig Triggering reverse current Clamping voltage IHold Holding reverse current Holding reverse voltage IPP Reverse working voltage maximum IRWM Peak pulse current Reverse working current maximum Diode_Characteristic_Curve_with_snapback_Bi-directional.vsd Figure 4 Principal characteristic of a bi-directional ESD protection device including snap-back Application Note AN327, Rev. 1.0 6 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Introduction For ESD protection in RF application it is mandatory to keep the ESD diode capacitance as small as possible. This avoids a de-tuning of input matching structure and the protection device will create less harmonic distortion.The principle of minimizing the ESD diode´s capacitance is explained for a unidirectional diode (Figure 5) and extrapolated to the bi-directional type (Figure 6) To control the overall device capacitance a low capacitance PIN diode (PIN1) is used in series to the avalanche (Zener) diode. When signal voltage is between 0V and VRWM (positive), Zener diode is driven in reverse direction and is not conducting.Voltage drop across the PIN1 diode is about 0V or very little positive, diode is forward driven. Under this condition capacitance of the PIN1 diode depends on the diffusion current in forward direction which is equal to the leakage current of the Zener diode.This is also a reason the leakage current of the TVS diode must be kept as low as possible. The described structure can handle a positive ESD strike only, because the PIN1 diode (serial to the Zener diode) can only hande the ESD current in forward direction. Driving the PIN1 diode in reverse breakthrough results in its damage. To make the ESD diode safe for the negative ESD strike as well, another PIN diode (PIN2) is added. In case a negative voltage, caused by an ESD strike or by an other reason, is applied to the signal line, PIN2 becomes conductive and shunt the negative voltage to ground (bypassing PIN1 and the Zener diode). This kind of low-capacitance ESD diode construction can handle positive and negative ESD strikes, but is only suited for positive wanted signals. To handle positive and negative signals (e.g. a bias free RF signal) without distortion, the unidirectional ESD diode structure has to be expanded to a bi-directional structure. This can be done by adding the same structure serial in a flipped way. This approach is used in ESD101 and ESD103 design. 2 chips are placed in one package and connedcted by a chip to chip bond. To ensure linearity, both chips are matched in characteristic. 1.2 Requirements for Electrostatic Discharge Protection at RF To protect a non-biased RF signal showing both positive and negative voltage swing, a bi-directional TVS diode is mandatory, as explained above. As for its other characteristics, at the radio frequencies the most important are parasitic parameters and linearity, as they influence strongly performance of the whole system. In order to maintain device linearity at RF the “positive” and the “negative” diodes has to be identical in characteristic (good diode matching). Poor matching would lead to generation of even order harmonics (2, 4, 6…). However, even with good diode matching TVS diode still remains nonlinear device. Effects like nonlinear V-I characteristic, and even more importantly voltage dependent capacitance lead to harmonics generation and to intermodulation distortions. The requirements to ESD protection diodes suitable for RF applications can be summarized as follows: Bi-directionality Low parasitics − Minimal capacitance − Absence of (self)resonanse, or resonance frequency much higher than working frequency − Low Insertion Loss High linearity in working frequency range − Even order harmonics (H2,H4, …) as low as possible − Odd order harmonics (H3, H5, …) as low as possible o Maximum harmonic generation is specified in various national/international standatds about electromagnetic compliance e.g. EN 300 328 o By a rule of thumb maximum harmonic power at >1GHz of -30dBm must not be exceeded. Oftens customers have their own - more stringent - specifications based on dedicated requirements. − Low intermodulation distortion of 3-rd order (IMD3), especially in full-duplex systems (CDMA, UMTS, LTE) Application Note AN327, Rev. 1.0 7 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Introduction Cpin1 = f(I_leakage) I_leakage PIN2 cap., rev. biased => Cpin2 is small (GND) Figure 5 Zener diode, PIN1 cap., rev. biased zero biased wanted signal: 0V… max VRWM positive ESD strike PIN1 Zener diode PIN2 PIN diode (low cap) Negative ESD strike wanted signal: 0V… max VRWM (GND) Operating principle of a low capacitance uni-directional ESD diode PIN1 PIN2 Zener diode PIN1 PIN diode Negative ESD strike Chip to chip bond positive ESD strike PIN2 positive ESD strike PIN diode Zener diode negative ESD strike RF signal line (GND) Figure 6 Bi-directional ESD diode, dedicated to protect RF lines Application Note AN327, Rev. 1.0 8 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes ESD101-B1 / ESD103-B1 Overview 2 ESD101-B1 / ESD103-B1 Overview 2.1 Features Table 1 Feature overview of ESD101-B1 / ESD103-B1 Feature ESD101-B1 ESD103-B1 Maximum working voltage VRWM = ±5.5 V VRWM = ±15 V ESD protection of RF signal lines according to IEC61000-4-2 ±12 kV (contact), ±14 kV (air) ±10 kV (contact) Extremely low capacitance CL = 0.1 pF (typical) Very low reverse current IR < 0.1 nA IR < 0.1 nA Extremely small form factor down to 0.62 x 0.32 x 0.31 mm² Yes Yes 1) CL = 0.09 pF (typical) 1) Pb-free package (RoHS compliant) 1) at f = 1 GHz 2.2 Key Applications of ESD101-B1 / ESD103-B1 WLAN, GPS antenna, DVB T/H, Bluetooth Class 1 and 2 RF antenna Super high speed interfaces Connectivity applications Automated Meter Reading 2.3 Description Devices ESD101-B1 / ESD103-B1 consist of two identical chips, connected in series in opposite directions (see Figure 7b). The device structure and the manufacturing process have been specifically optimized to fulfill requirements stated above. The devices belong to the same family, and differ primarily in their operating voltage range. Both devices are available in the TSSLP-2 package (ESD101/103-B1-02ELS) with dimensions of 0.62 mm x 0.32 mm x 0.31 mm (EIA case size 0201) and later on as well in TSLP-2 (ESD101/103-B1-02EL) with dimensions of 1.0 mm x 0.6 mm x 0.39 mm (EIA case size 0402). Pin 1 Pin 1 marking (lasered) Pin 2 Pin 1 TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram PG-TS(S)LP-2_Dual_Diode_Serie_PinConf_and_SchematicDiag.vsd Figure 7 Pin configuration and schematic diagram of ESD101-B1 / ESD103-B1 Application Note AN327, Rev. 1.0 9 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Application Circuit and Performance Overview 3 Application Circuit and Performance Overview 3.1 Schematic Diagram 50 Ohm RF In 50 Ohm TVS diode Figure 8 Schematics of the ESD101-B1 / ESD103-B1 Application Circuit 3.2 Linear and NON-linear measurement Setups RF Out In order to measure insertion and return loss, devices were connected to a network analyzer as shown in Figure 8 without any additional modules in between. To minimize parasitic effects caused by PCB discontinuities, the full 2-port calibrated measurement was done with RF probes direct on the device pads. Insertion (IL) and return (RL) loss was calculated from measured data as follows: IL 20 log S 21 RL 20 log S11 Non linear characterization of the ESD101/103-B1 is done via harmonic measurement P(H2), P(H3) at given fundamental power P(H1) and by the intermodulation distortion measurement for a given blocker and interferer constellation. Setups for nonlinearity measurements (harmonics and intermodulation distortion) are shown on Figure 9 and Figure 10 respectively. Mesurement results for the harmonics P(H2), P(H3) vs. fundamental power P(H1) are included in chapter 4.2. Intermodulation distortion (IMD) measurement reproduces more the scenario of real application. In this scenario (e.g. in all kind of full duplex systems like CDMA, UMTS, LTE) the high power transmission signal (Tx, e.g. PTX =20 dBm) and a received Jammer signal (e.g. PI =-15 dBm) are both entering the TVS diode. Special nd rd combinations of Tx and Jammer signals produce 2 and 3 order intermodulation products, which can fall in the Rx band and interfere with the wanted Rx signal. With the help of the phase shifter, matching conditions for the interfering signal can be adapted to simulate various matching scenario. Lowest intermodulation is expected at the ESD diode providing a low load impedance load for the blocker. Test conditions for intermodulation measurements are summarized in paper from Nokia titled „Antenna Switch Linearity Requirements for GSM/WCDMA Mobile Phone Front-Ends” presented at the “Wireless Technolgies 2005 - 8th European Conference on Wireless Technology”. Application Note AN327, Rev. 1.0 10 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Application Circuit and Performance Overview Load -20dB Directional Coupler -20dB Signal Generator Power Amplifier Tunable Bandpass Filter Circulator A Power meter Agilent E4419B -3dB B DUT ANT K&L Figure 9 -20dB Directional Coupler Tunable Bandstop Filter Signal Analyzer Tx Set-Up for Harmonics Measurement Load -20dB -3dB Tx K&L Mini Circuits (ZHL-30W-252 -S+) Signal Generator Power Amplifier Duplexer Tunable Bandpass Filter Circulator DUT ANT Phase Shifter / Delay Line TRx -20dB ANT K&L Tunable Bandpass Filter Signal Generator Rx K& L Signal Analyzer Figure 10 Power reference plane PTx = +20 dBm PBl = -15 dBm -3 dB Tunable Bandpass Filter Test Set-Up for IMD Measurements Table 2 Test Conditions for IMD Measurements Band Tx Freq. Rx Freq. (MHz) (MHz) (MHz) 850 836.5 881.5 1900 1880 1960 2100 1950 2140 PTX = +20dBm, PI = -15dBm, frequencies in MHz @25°C Application Note AN327, Rev. 1.0 11 / 17 IMD2 Low Jammer 1 (MHz) 45 80 190 IMD3 Jammer 2 (MHz) 791.5 1800 1760 IMD2 High Jammer 3 (MHz) 1718 3840 4090 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Application Circuit and Performance Overview 3.3 Summary of Measurement Results Table 3 Electrical Characteristics (at room temperature) Parameter Symbol Value ESD101-B1 ESD103-B1 Unit Comment/Test condition Insertion Loss IL -0.1 -0.1 -0.1 -0.1 dB f=2 GHz f=6 GHz Return Loss RL -35.6 -27.3 -38.7 -29.7 dB f=2 GHz f=6 GHz Table 4 Harmonics generation Harmonic Low Band, f0=824MHz High Band, f0=1800MHz Unit Comment/Test condition ESD101-B1 ESD103-B1 ESD101-B1 ESD103-B1 Pin=26 dBm Pin=35 dBm Pin=27 dBm Pin=32 dBm 2f0 -71.6 -66.3 -70.9 -63.6 dBm 3f0 -54.0 -44.4 -51.2 -46.5 dBm Table 5 Band I V Table 6 Band I V Intermodulation distortion ESD101-B1 Tx, MHz 1950 836.5 Rx, MHz 2140 881.5 Blocker, MHz IMD Product level, dBm IMD Generation Min Max 190 -124 -96 TX+Blocker 1760 -102 -87 2*TX-Blocker 4090 -139 -122 Blocker-TX 45 -110 -93 TX+Blocker 791.5 -101 -85 2*TX-Blocker 1718 -122 -113 Blocker-TX Intermodulation distortion ESD103-B1 Tx, MHz 1950 836.5 Rx, MHz 2140 881.5 Application Note AN327, Rev. 1.0 Blocker, MHz IMD Product level, dBm IMD Generation Min Max 190 -116 -93 TX+Blocker 1760 -103 -86 2*TX-Blocker 4090 -123 -109 Blocker-TX 45 -109 -92 TX+Blocker 791.5 -101 -85 2*TX-Blocker 1718 -113 -106 Blocker-TX 12 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Measurement Graphs 4 Measurement Graphs 4.1 Linear RF characteristic Figure 11 Insertion Loss: ESD101 vs. ESD103 @ 0V bias Figure 12 Return Loss: ESD101 vs. ESD103 @ 0V bias Application Note AN327, Rev. 1.0 13 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Measurement Graphs Comparing the RF characteristic (S-parameter) between the ESD101/103-B1-02ELS in TSSLP-2 (SMD size 0201) with the slightly larger ESD101/103-B1-02EL in TSLP-2 (SMD size 0402) we have to take the longer internal chip to chip bond into account. This results in a shift of the self-resonance frequency of about 45GHz for the ESD101/103-B1-02ELS, down to ca. 35GHz. 4.2 Non-linear RF characteristic 14,00 0 16,00 18,00 PH1, dBm 20,00 22,00 24,00 -10 H2/dBm -20 H3/dBm -30 PH2/PH3, dBm 26,00 -40 -50 -60 -70 -80 -90 -100 Figure 13 Harmonics Generation in Low Band (f0=824MHz), ESD101-B1 14,00 0,00 19,00 PH1, dBm 24,00 29,00 -10,00 H2/dBm -20,00 H3/dBm -30,00 PH2/PH3, dBm 34,00 -40,00 -50,00 -60,00 -70,00 -80,00 -90,00 -100,00 Figure 14 Harmonics Generation in Low Band (f0=824MHz), ESD103-B1 Application Note AN327, Rev. 1.0 14 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Measurement Graphs 19 20 21 22 PH1, dBm 23 24 25 26 27 28 0 -10 H2/dBm PH2/PH3, dBm -20 H3/dBm -30 -40 -50 -60 -70 -80 -90 Figure 15 Harmonics Generation in High Band (f0=1800MHz), ESD101-B1 19 21 23 25 27 PH1, dBm 29 31 33 35 37 0 -10 H2/dBm PH2/PH3, dBm -20 H3/dBm -30 -40 -50 -60 -70 -80 -90 Figure 16 Harmonics Generation in High Band (f0=1800MHz), ESD103-B1 Application Note AN327, Rev. 1.0 15 / 17 2013-05-22 ESD101-B1 / ESD103-B1 Bi-directional Ultra Low Capacitance TVS Diodes Authors 0 50 100 Delay, ps 150 200 250 300 -82 -84 -86 -88 IMD, dBm -90 -92 -94 -96 -98 -100 -102 -104 Figure 17 Example of Intermodulation Measurement Data (ESD103-B1, Band V, fBlock=791.5 MHz) depending on the phase shifter adjustment rd As mentioned in chapter 3.2, Intermodulation Distortion 3 order depends significant on the phase shifter rd (delay). There are dedicated matching conditions resulting into a low IM 3 order product. 5 Authors Anton Gutsul, Application Engineer of Business Unit “RF and Protection Devices” Alexander Glas, Principal Engineer of Business Unit “RF and Protection Devices” Application Note AN327, Rev. 1.0 16 / 17 2013-05-22 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN327