JCS50N06H - 吉林华微电子股份有限公司

N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
R
JCS50N06H
主要参数
MAIN
封装 Package
CHARACTERISTICS
ID
VDSS
Rdson(@Vgs=10V)
Qg
50 A
60 V
23 mΩ
34 nc
用途
APPLICATIONS
 高频开关电源
 UPS 电源
 High frequency switch
产品特性
FEATURES
 Low gate charge
 Low Crss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
 RoHS product
 低栅极电荷
 低 Crss
 开关速度快
 产品全部经过雪崩测试
 高抗 dv/dt 能力
 RoHS 产品
mode power supplies
 UPS
订货信息 ORDER MESSAGE
包
装
Packaging
器件重量
Device
Weight
印
记
Marking
JCS50N06CH-O-C-N-B
JCS50N06CH
TO-220C
否
NO
条管 Tube
2.15 g(typ)
JCS50N06FH-O-F-N-B
JCS50N06FH
TO-220MF
否
NO
条管 Tube
2.20 g(typ)
JCS50N06VH-O-V-N-B
JCS50N06VH
IPAK
否
NO
条管 Tube
0.35 g(typ)
JCS50N06RH-O-R-N-B
JCS50N06RH
DPAK
否
NO
条管 Tube
0.30 g(typ)
JCS50N06RH-O-R-N-A
JCS50N06RH
DPAK
否
NO
卷盘 Reel
0.30 g(typ)
版本:201505C
封
装
Package
无卤素
Halogen
Free
订 货 型 号
Order codes
1/11
JCS50N06H
R
绝对最大额定值
ABSOLUTE RATINGS (Tc=25℃)
项
目
Parameter
符 号
Symbol
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current
ID
T=25℃
T=100℃
-continuous
数
值 Value
JCS50N06RH/VH JCS50N06CH
单 位
JCS50N06FH Unit
60
V
50
50*
A
31.7
31.7*
A
最大脉冲漏极电流(注 1)
Drain Current – pulse(note 1)
IDM
200*
A
最高栅源电压
Gate-Source Voltage
VGSS
±20
V
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche Energy
(note 2)
EAS
927
mJ
雪崩电流(注 1)
Avalanche Current(note 1)
IAR
50
A
12
mJ
7.0
V/ns
重复雪崩能量(注 1)
Repetitive Avalanche Energy(note EAR
1)
二极管反向恢复最大电压变化速率
dv/dt
(注 3)
Peak Diode Recovery dv/dt(note 3)
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above
25℃
87.5
103.8
56
W
0.70
0.83
0.45
W/℃
最高结温及存储温度
Operating and Storage Temperature TJ,TSTG
Range
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
TL
-55~+150
℃
300
℃
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201505C
2/11
JCS50N06H
R
电特性 ELECTRICAL CHARACTERISTICS
项
目
Parameter
符 号
Symbol
测试条件
Tests conditions
最小 典型 最大 单位
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA, referenced to
TJ
25℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
反向栅极体漏电流
Gate-body leakage current,
reverse
ID=250μA, VGS=0V
60
-
-
V
-
0.6
-
V/℃
VDS=60V,VGS=0V, TC=25℃
-
-
1
μA
VDS=48V,
-
-
10
μA
VDS=0V, VGS =30V
-
-
100
nA
IGSSR
VDS=0V, VGS =-30V
-
-
-100
nA
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=25A
-
19
23
mΩ
正向跨导
Forward Transconductance
gfs
VDS = 40V, ID=25A(note 4)
30
-
S
TC=125℃
通态特性 On-Characteristics
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
反向传输电容
Reverse transfer capacitance
Crss
版本:201505C
VDS=25V,
VGS =0V,
f=1.0MHZ
-
900 1125
pF
-
430
540
pF
-
80
100
pF
3/11
JCS50N06H
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
td(on)
上升时间 Turn-On rise time
tr
延迟时间 Turn-Off delay time
VDD=30V,ID=50A,RG=50Ω
(note 4,5)
-
40
90
ns
-
100 210
ns
td(off)
-
90 190
ns
下降时间 Turn-Off Fall time
tf
-
80 170
ns
栅极电荷总量 Total Gate Charge
Qg
-
34
45
nC
栅-源电荷 Gate-Source charge
Qgs
-
7
-
nC
栅-漏电荷 Gate-Drain charge
Qgd
-
17
-
nC
VDS =48V ,
ID=50A
VGS =10V (note 4,5)
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS
-
-
50
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
-
-
200
A
1.4
V
正向压降
Drain-Source Diode Forward
Voltage
VSD
反向恢复时间
Reverse recovery time
trr
反向恢复电荷
Reverse recovery charge
Qrr
VGS=0V,
IS=50A
-
VGS=0V, IS=50A
dIF/dt=100A/μs (note 4)
-
50
-
ns
-
80
-
μC
热特性 THERMAL CHARACTERISTIC
项
目
Parameter
符 号
Symbol
结到管壳的热阻
Thermal Resistance, Junction to Case
最大 Max
JCS50N06RH/VH JCS50N06CHJCS50N06FH
单 位
Unit
Rth(j-c)
1.43
1.20
2.22
℃/W
结到环境的热阻
Rth(j-A)
Thermal Resistance, Junction to Ambient
62.5
62.5
62.5
℃/W
注释:
Notes:
1:脉冲宽度由最高结温限制
1:Pulse width limited by maximum junction
2:L=0.4mH, IAS=50A, VDD=25V,
RG=25 Ω,起始
结温 TJ=25℃
3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
temperature
2:L=0.4mH, IAS=50A, VDD=25V, RG=25 Ω,Starting
TJ=25℃
3:ISD ≤50A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201505C
4/11
JCS50N06H
R
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
100
100
ID [A]
I D [A]
VGS
Top
15V
10V
9V
8V
7V
6.5V
6V
5.5V
Bottom 5V
150℃
25℃
10
10
Notes:
1.250μs pulse test
2.VDS=40V
Notes:
1. 250μs pulse test
2. TC=25℃
0.1
1
1
4
10
6
8
10
12
VGS [V]
V DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
IDR [A]
100
150 ℃
25 ℃
Notes:
1. 250μs pulse test
2. VGS=0V
10
0.5
1.0
1.5
VSD [V]
Capacitance Characteristics
Gate Charge Characteristics
12
3
1x10
VDS=48V
VDS=30V
10
VDS=12V
VGS Gate Source Voltage[V]
Capacitance [pF]
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
8
Ciss
6
4
Coss
Crss
2
0
0
0
10
1
10
V D S Drain-Source Voltage [V]
版本:201505C
2
10
0
10
20
30
40
Qg Toltal Gate Charge [nC]
5/11
JCS50N06H
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Maximum Safe Operating Area
JCS50N06CH/RH/VH
Maximum Drain Current
vs. Case Temperature
60
2
ID Drain Current [A]
I D Drain Current [A]
10
40
Operation in This Area
is Limited by RDS(ON)
1ms
10ms
100ms
1
10
DC
0
10
20
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
-1
10
0
25
-2
50
75
100
TC Case Temperature [℃]
125
10
150
1
2
10
10
Transient Thermal Response Curve
JCS50N06CH
1
Operation in This Area
is Limited by RDS(ON)
100μs
I D Drain Current [A]
0
10
V DS Drain-Source Voltage [V]
(t) Thermal Response
2
-1
10
Maximum Safe Operating Area
JCS50N06FH
10
100μs
1ms
1
10
10ms
100ms
DC
0
0 .2
0 .1
0 .1
N o tes :
1 Z θ J C ( t ) = 1 .2 0 ℃ / W M a x
2 D u t y F a c t o r , D = t 1 /t 2
3 T J M - T c = P D M * Z θ J C (t )
0 .0 5
0 .0 2
JC
10
D = 0 .5
Zθ
0 .0 1
P DM
0 .0 1
Note:
1 TC=25℃
2 TJ=150℃
3 Single Pulse
-1
10
-2
-1
10
1 E -5
0
1
10
1E-4
10
1 E -3
t2
0 .0 1
0 .1
1
t 1 S q u a re W a v e P u ls e D u r a t io n [ s e c ]
2
10
V DS Drain-Source Voltage [V]
Transient Thermal Response Curve
JCS50N06FH
D = 0 .5
0 .2
0 .1
0 .1
N
1
2
3
0 .0 5
o te s :
Z θ J C ( t ) = 2 .2 2 ℃ /W M a x
D u t y F a c t o r , D = t1 /t 2
T J M -T c = P D M * Z θ J C(t)
0 .0 2
θ JC
(t) Thermal Response
1
0 .0 1
P
Z
10
t1
s in g l e p u ls e
DM
0 .0 1
t1
s i n g le p u ls e
1 E -5
1 E -4
1 E -3
0 .0 1
t2
0 .1
1
10
t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]
版本:201505C
6/11
10
R
JCS50N06H
外形尺寸 PACKAGE MECHANICAL DATA
TO-220C
版本:201505C
单位 Unit:mm
7/11
R
JCS50N06H
外形尺寸 PACKAGE MECHANICAL DATA
TO-220MF
版本:201505C
单位 Unit:mm
8/11
R
JCS50N06H
外形尺寸 PACKAGE MECHANICAL DATA
IPAK
版本:201505C
单位 Unit:mm
9/11
R
JCS50N06H
外形尺寸 PACKAGE MECHANICAL DATA
DPAK
版本:201505C
单位 Unit:mm
10/11
JCS50N06H
R
注意事项
1.吉林华微电子股份有限公司的产品销售分
为直销和销售代理,无论哪种方式,订货
时请与公司核实。
2.购买时请认清公司商标,如有疑问请与公
司本部联系。
3.在电路设计时请不要超过器件的绝对最大
额定值,否则会影响整机的可靠性。
4.本说明书如有版本变更不另外告知
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its
product either through direct sales or sales
agent , thus, for customers, when ordering ,
please check with our company.
2. We strongly recommend customers check
carefully on the trademark when buying our
product, if there is any question, please
don’t be hesitate to contact us.
3. Please do not exceed the absolute
maximum ratings of the device when circuit
designing.
4. Jilin Sino-microelectronics co., Ltd reserves
the right to make changes in this
specification sheet and is subject to
change without prior notice.
联系方式
CONTACT
吉林华微电子股份有限公司
JILIN SINO-MICROELECTRONICS CO., LTD.
公司地址:吉林省吉林市深圳街 99 号
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64678411
Fax:86-432-64665812
Web Site:www.hwdz.com.cn
邮编:132013
总机:86-432-64678411
传真:86-432-64665812
网址:www.hwdz.com.cn
市场营销部
地址:吉林省吉林市深圳街 99 号
邮编:132013
电话: 86-432-64675588
64675688
64678411
传真: 86-432-64671533
版本:201505C
MARKET DEPARTMENT
ADD: No.99 Shenzhen Street, Jilin City, Jilin
Province, China.
Post Code: 132013
Tel: 86-432-64675588
64675688
64678411
Fax: 86-432-64671533
11/11