N 沟道增强型场效应晶体管 N-CHANNEL MOSFET R JCS1N70TC 主要参数 封装 Package MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 1A 700 V 18 Ω 4.41nC 用途 APPLICATIONS z 高频开关电源 z 电子镇流器 z 功率因数校正 z High frequency switching 产品特性 FEATURES z Low gate charge z Low Crss (typical 1.1pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z 低栅极电荷 z 低 Crss (典型值 1.1pF) z 开关速度快 z 产品全部经过雪崩测试 z 高抗 dv/dt 能力 z RoHS 产品 mode power supply z Electronic ballast z Power factor correction 订货信息 ORDER MESSAGE 订 货 型 号 印 Order codes Marking JCS1N70TC-O-T-N-A 1N70T 版本:201412B 记 封 装 Package TO-92 无卤素 Halogen Free 否 NO 包 装 器件重量 Packaging Device Weight 编带 Brede 0.216 g(typ) 1/8 JCS1N70TC R 绝对最大额定值 项 ABSOLUTE RATINGS (Tc=25℃) 目 Parameter 符 号 Symbol 数 值 Value 单 位 JCS1N70TC Unit 最高漏极-源极直流电压 Drain-Source Voltage VDSS 700 V 连续漏极电流 Drain Current ID T=25℃ T=100℃ 1.0 A 0.48 A 最大脉冲漏极电流(注 1) Drain Current - pulse (note 1) IDM 4.0 A 最高栅源电压 Gate-Source Voltage VGSS ±30 V 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy (note 2) EAS 81 mJ 雪崩电流(注 1) Avalanche Current(note 1) IAR 1.0 A 重复雪崩能量(注 1) Repetitive Avalanche (note 1) EAR 0.417 mJ 4.5 V/ns 4.17 W 0.33 W/℃ -55~+150 ℃ 300 ℃ -continuous Energy 二极管反向恢复最大电压变化速率(注 3) dv/dt Peak Diode Recovery dv/dt(note 3) 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,TSTG 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 版本:201412B 2/8 JCS1N70TC R 电特性 ELECTRICAL CHARACTERISTICS 项 目 Parameter 符 号 Symbol 测试条件 Tests conditions 最小 典型 最 大 单 Min 位 Typ Max Units 关态特性 Off –Characteristics 漏-源击穿电压 Drain-Source Voltage BVDSS 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ ID=250μA, VGS=0V 700 - - V - 0.50 - V/℃ VDS=700V,VGS=0V, TC=25℃ - - 1 μA VDS=560V, - - 10 μA 零栅压下漏极漏电流 Zero Gate Voltage Drain Current IDSS 正向栅极体漏电流 Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA 阈值电压 Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V 静态导通电阻 Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=0.5A - 15 18 Ω 正向跨导 Forward Transconductance gfs VDS = 40V, ID=0.5A(note 4) - 0.25 - S TC=125℃ 通态特性 On-Characteristics 动态特性 Dynamic Characteristics 输入电容 Input capacitance Ciss 输出电容 Output capacitance Coss 反向传输电容 Reverse transfer capacitance Crss 版本:201412B VDS=25V, VGS =0V, f=1.0MHZ - 115 132 pF - 12.6 - pF - 1.1 - pF 3/8 JCS1N70TC R 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) 上升时间 Turn-On rise time tr 延迟时间 Turn-Off delay time td(off) - 下降时间 Turn-Off Fall time tf 栅极电荷总量 Total Gate Charge Qg 栅-源电荷 Gate-Source charge Qgs 栅-漏电荷 Gate-Drain charge Qgd VDD=350V,ID=1.0A,RG=25Ω (note 4,5) VDS =560V , ID=1.0A VGS =10V (note 4,5) - 11.2 13 ns - 19.6 60 ns 22 20 ns - 21.2 48 ns - 4.41 5.1 nC - 1.03 - nC - 2.42 - nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 1 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 4 A - - 1.4 V - 135 - ns - 0.28 - μC 正向压降 Drain-Source Diode Forward Voltage VSD 反向恢复时间 Reverse recovery time trr 反向恢复电荷 Reverse recovery charge Qrr VGS=0V, IS=1.0A VGS=0V, IS=1.0A dIF/dt=100A/μs (note 4) 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 结到管壳的热阻 Thermal Resistance, Junction to Case 符 最大 号 Max Symbol JCS1N70TC Rth(j-c) 结到环境的热阻 Rth(j-A) Thermal Resistance, Junction to Ambient 注释: 1:脉冲宽度由最高结温限制 2:L=150mH, IAS=1.0A, VDD=50V, RG=25 Ω,起始 结温 TJ=25℃ 3:ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度≤300μs,占空比≤2% 5:基本与工作温度无关 版本:201412B 单 位 Unit - ℃/W 110 ℃/W Notes: 1:Pulse width limited by maximum junction temperature 2:L=150mH, IAS=1.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤1.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature 4/8 JCS1N70TC R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V 10 ID [A] IDS (on ) [A] Top 1 150℃ 25℃ 1 Notes: 1. 250μs pulse test 2. TC=25℃ 0.1 1 VDS [V] Notes: 1.250μs pulse test 2.VDS=40V 0.1 10 2 4 6 8 10 VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature 26 24 VGS=10V 20 IDR [A] RDS (on) [ Ω ] 22 18 1 150℃ 16 14 25℃ VGS=20V Notes: 1. 250μs pulse test 2. VGS=0V 12 Note :T j=25℃ 10 8 0 1 2 3 0.1 0.4 0.5 0.6 0.7 0.8 0.9 ID [A] 1.0 1.1 1.2 1.3 1.4 1.5 VSD [V] Gate Charge Characteristics Capacitance Characteristics 12 VDS=560V VGS Gate Source Voltage[V] 10 VDS=350V 8 VDS=140V 6 4 2 0 0 1 2 3 4 5 Qg Toltal Gate Charge [nC] 版本:201412B 5/8 JCS1N70TC R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Resistance Variation vs. Temperature Breakdown Voltage Variation vs. Temperature 3.0 2.5 1.1 RDS (o n ) (Normalized) BVDS (Normalized) 1.2 1.0 0.9 0.8 -75 Notes: 1. VGS=0V 2. ID=250μA -50 -25 0 25 50 75 100 125 2.0 1.5 1.0 Notes: 1. VGS=10V 2. ID=0.5A 0.5 150 0.0 -75 -50 -25 0 25 T j [℃ ] 50 75 100 125 150 T j [℃ ] Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature 1.2 ID Drain Current [A] 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 150 TC Case Temperature [℃] 版本:201412B 6/8 R JCS1N70TC 外形尺寸 PACKAGE MECHANICAL DATA TO-92 版本:201412B 单位 Unit:mm 7/8 JCS1N70TC R 注意事项 1.吉林华微电子股份有限公司的产品销售分 为直销和销售代理,无论哪种方式,订货 时请与公司核实。 2.购买时请认清公司商标,如有疑问请与公 司本部联系。 3.在电路设计时请不要超过器件的绝对最大 额定值,否则会影响整机的可靠性。 4.本说明书如有版本变更不另外告知 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式 CONTACT 吉林华微电子股份有限公司 JILIN SINO-MICROELECTRONICS CO., LTD. 公司地址:吉林省吉林市深圳街 99 号 ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64678411 Fax:86-432-64665812 Web Site:www.hwdz.com.cn 邮编:132013 总机:86-432-64678411 传真:86-432-64665812 网址:www.hwdz.com.cn 市场营销部 地址:吉林省吉林市深圳街 99 号 邮编:132013 电话: 86-432-64675588 64675688 64678411-3098/3099 传真: 86-432-64671533 版本:201412B MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 8/8