N 沟道增强型场效应晶体管 N- CHANNEL MOSFET R JCS18N50H 主要参数 MAIN CHARACTERISTICS ID 18 A VDSS 500 V Rdson(@Vgs=10V) 0.27Ω Qg 50nC 封装 Package 用途 APPLICATIONS z 高频开关电源 z 电子镇流器 z UPS 电源 z High efficiency switch 产品特性 FEATURES z 低栅极电荷 z 低 Crss (典型值 25pF) z 开关速度快 z 产品全部经过雪崩测试 z 高抗 dv/dt 能力 z RoHS 产品 z Low gate charge z Low Crss (typical 25pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product mode power supplies z Electronic lamp ballasts based on half bridge z UPS 订货信息 ORDER MESSAGE 订 货 型 号 印 Order codes Marking Package JCS18N50FH-O-F-N-B JCS18N50FH TO-220MF 版本:201007A 记 封 无卤素 装 否 包 装 器件重量 Halogen Free Packaging Device Weight NO 条管 Tube 2.20 g(typ) 1/8 JCS18N50FH R ABSOLUTE RATINGS (Tc=25℃) 绝对最大额定值 项 目 符 Parameter 最高漏极-源极直流电压 Drain-Source Voltage 连续漏极电流 Drain Current -continuous 号 Symbol VDSS ID T=25℃ T=100℃ 数 值 单 位 Value Unit 500 V 18.0* A 11.0* A 最大脉冲漏极电流(注 1) Drain Current -pulse (note 1) IDM 72* A 最高栅源电压 Gate-Source Voltage VGSS ±30 V 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy(note 2) EAS 900 mJ 雪崩电流(注 1) Avalanche Current (note 1) IAR 18.0 A 重复雪崩能量(注 1) Repetitive Avalanche Current (note 1) EAR 22.7 mJ 二极管反向恢复最大电压变化速率(注 3) Peak Diode Recovery dv/dt (note 3) dv/dt 4.5 V/ns 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 39.0 W 0.31 W/℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL 300 ℃ *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 版本:201007A 2/8 JCS18N50FH R 电特性 ELECTRICAL CHARACTERISTIC 项 目 Parameter 符 号 Symbol 测试条件 最小 典型 最 大 单 位 Tests conditions Min Typ Max Units 关态特性 Off –Characteristics 漏-源击穿电压 Drain-Source Voltage BVDSS 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS ID=250μA, referenced to 25℃ /ΔTJ 零栅压下漏极漏电流 Zero Gate Voltage Drain Current IDSS 正向栅极体漏电流 Gate-body leakage current, forward 反向栅极体漏电流 Gate-body leakage current, reverse ID=250μA, VGS=0V 500 - - - 0.5 - V/℃ VDS=500V, VGS=0V, TC=25℃ - - 1 μA VDS=400V, TC=125℃ - - 10 μA IGSSF VDS=0V, VGS =30V - 100 nA IGSSR VDS=0V, VGS =-30V - 阈值电压 Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 静态导通电阻 Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=9.0A - 正向跨导 Forward Transconductance gfs - - V -100 nA 通态特性 On-Characteristics VDS = 40V , ID=9.0A(note 4) 3.0 - 5.0 V 0.22 0.27 Ω 24 - S 动态特性 Dynamic Characteristics 输入电容 Input capacitance Ciss 输出电容 Output capacitance Coss 反向传输电容 Reverse transfer capacitance Crss 版本:201007A VDS=25V, VGS =0V, f=1.0MHZ - 2300 2920 pF - 350 450 pF - 27 pF 3/8 43 JCS18N50FH R 电特性 ELECTRICAL CHARACTERISTICS 项 目 符 Parameter 号 Symbol 测试条件 最小 典型 最大 单位 Tests conditions Min Typ Max Units 开关特性 Switching –Characteristics 延迟时间 Turn-On delay time td(on) 上升时间 Turn-On rise time tr 延迟时间 Turn-Off delay time VDD=250V,ID=18A,RG=25Ω (note 4,5) - 53 130 ns - 169 350 ns td(off) - 97 200 ns 下降时间 Turn-Off Fall time tf - 85 195 ns 栅极电荷总量 Total Gate Charge Qg - 50 60 nC 栅-源电荷 Gate-Source charge Qgs - 12.5 - nC 栅-漏电荷 Gate-Drain charge Qgd - 22 - nC VDS =400V , ID=18A VGS =10V(note 4,5) 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain-Source Diode Forward Current IS - - 18 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 72 A 1.4 V 正向最大连续电流 Maximum Continuous Drain-Source Diode Forward Current VSD 反向恢复时间 Reverse recovery time trr 反向恢复电荷 Reverse recovery charge Qrr VGS=0V, IS=18A - VGS=0V, IS=18A dIF/dt=100A/μs (note 4) 465 ns 5.2 μC 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 符 号 Symbol 最大值 单 Value JCS18N50FH 位 Unit 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 3.20 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 ℃/W 注: Notes: 1:脉冲宽度由最高结温限制 1:Pulse width limited by maximum junction temperature 2:L=5.0mH, IAS=18A, VDD=50V, RG=25 Ω,起始结温 2:L=5.0mH, IAS=18A, VDD=50V, RG=25 Ω,Starting TJ=25℃ TJ=25℃ 3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS,起始结温 TJ=25℃ 3:ISD ≤18A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2% 4:脉冲测试:脉冲宽度≤300μs,占空比≤2% 5:基本与工作温度无关 版本:201007A 5:Essentially independent of operating temperature 4/8 JCS18N50FH R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics Transfer Characteristics 2 10 2 10 1 ID Drain Current[A] Top ID Drain Current[A] 15.0V 10.0V 9.0V 8.0V 7.0V 6.5V 6.0V Bottom 5.5V 10 1 10 125℃ -55℃ 25℃ 0 10 0 10 1 10 Note: 1.VDS=40V 2.250μs Pulse Test 0 2 10 4 6 VDS Drain-Source Voltage[V] 8 10 12 VGS Gate-Source Voltage[V] On-Resistance Variation vs Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.5 IDR Reverse Drain Current[A] 10 V GS =10V 0.3 0.2 V GS=20V 0.1 Note :T j=25 ℃ 0.0 0 2 4 6 8 10 12 14 16 18 20 22 1 150℃ 25℃ 10 Note: 1.VGS=0V 2.250μs Pulse Test 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD Source-Drain voltage[V] ID [A] Capacitance Characteristics Capacitance Characteristics 12 VDS=400V VDS=250V VDS=100V 10 VGS Gate Source Voltage[V] RDS (on) [ Ω ] 0.4 8 6 4 2 0 版本:201007A 0 5 10 15 20 25 30 35 Qg Toltal Gate Charge [nC] 5/8 40 45 50 JCS18N50FH R 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature 3.0 1.2 R D(on)(Normalized) 1.0 0.9 -50 0 50 100 150 2.0 1.5 1.0 Notes: 1. VGS=10V 2. ID=9.0A 0.5 0.0 -100 200 -75 -50 -25 0 25 50 75 100 125 150 Tj [ ℃ ] Tj [ ℃ ] Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area ID Drain Current [A] 20 15 10 5 0 25 50 75 100 125 TC Case Temperature [℃ ] (t) Thermal Response Transient Thermal Response Curve 0 10 0.5 0.2 0.1 Notes: 1 Zθ JC(t)=3.20℃ /W Max 2 Duty Factor, D=t1/t2 3 TJM-Tc=PDM* Zθ JC(t) 0.05 -1 10 0.02 0.01 JC 0.8 Notes: 1. VGS=0V 2. ID=250μA PDM single pulse Zθ BVDS(Normalized) 2.5 1.1 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1 Square Wave Pulse Duration [sec] 版本:201007A 6/8 150 R JCS18N50FH 外形尺寸 PACKAGE MECHANICAL DATA TO-220MF 版本:201007A 单位 Unit :mm 7/8 JCS18N50FH R 注意事项 NOTE 1.吉林华微电子股份有限公司的产品销售分 为直销和销售代理,无论哪种方式,订货 时请与公司核实。 2.购买时请认清公司商标,如有疑问请与公 司本部联系。 3.在电路设计时请不要超过器件的绝对最大 额定值,否则会影响整机的可靠性。 4.本说明书如有版本变更不另外告知 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式 CONTACT 吉林华微电子股份有限公司 JILIN SINO-MICROELECTRONICS CO., LTD. 公司地址:吉林省吉林市深圳街 99 号 ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64678411 Fax:86-432-64665812 Web Site: www.hwdz.com.cn 邮编:132013 总机:86-432-64678411 传真:86-432-64665812 网址: www.hwdz.com.cn HTU UTH 市场营销部 地址:吉林省吉林市深圳街 99 号 邮编:132013 电话: 86-432-64675588 64675688 64678411-3098/3099 传真: 86-432-64671533 版本:201007A HTU UTH MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 8/8