LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA62B-3/SRFSBKS-9-PF DATA SHEET DOC. NO : QW0905- LA62B-3/SRFSBKS-9-PF REV. : A DATE : 07 - Aug. - 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LA 62B-3/SRFSBKS-9-PF Package Dimensions 2.1±0.5 7.0 6.35 3.2 3.0 7.37 5.08 □0.5TYP 2.9±0.5 2.54TYP 2.54TYP 1 + 2 - 5.4±0.5 3 + SBKS SRF 1 2 3 1.ANODE RED 2.COMMON CATHODE 3.ANODE BLUE LSRFSBKS2392/H 3.0 5.0 □0.5 TYP 18MIN 2.0MIN 2.0MIN 2.54TYP 2.54TYP 1 2 3 + - + SBKS SRF 1 2 3 + - + Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 1.ANODE BLUE 2.COMMON CATHODE 3.ANODE RED LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/5 PART NO. LA 62B-3/SRFSBKS-9-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SRF SBKS Forward Current IF 30 30 mA Peak Forward Current Duty 1/10@10KHz IFP 90 100 mA Power Dissipation PD 75 120 mW Reverse Current @5V Ir 10 50 μA Electrostatic Discharge ESD 2000 500 V Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL COLOR Emitted AlGaInP Dominant Spectral wave halfwidth length △λnm λDnm Lens Red LA62B-3/SRFSBKS-9-PF Forward voltage @20mA(V) Luminous Viewing intensity angle @20mA(mcd) 2θ 1/2 (deg) Min. Typ. Max. Min. Typ. 630 20 1.5 ---- 2.4 120 220 50 475 26 ---- 3.5 4.2 120 220 50 White Diffused InGaN/SiC Blue Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/5 PART NO. LA62B-3/SRFSBKS-9-PF Typical Electro-Optical Characteristics Curve SRF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 2.0 50 Relative Intensity Normalize @20mA Forward Current(mA) 60 40 30 20 10 0 1.0 0.0 0 1.0 0.5 2.0 1.5 1.0 3.0 2.5 10 1.2 1.1 1.0 0.9 0.8 20 40 60 80 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature 0 1000 Forward Current(mA) Forward Voltage(V) -20 100 700 80 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/5 PART NO. LA62B-3/SRFSBKS-9-PF Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature(℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/5 PART NO. LA62B-3/SRFSBKS-9-PF Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11