To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD1527 Silicon NPN Triple Diffused ADE-208-913 (Z) 1st. Edition September 2000 Application High voltage power amplifier Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage VCEO 1000 V Emitter to base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 1.8 W 25 W PC * 1 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SD1527 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 1000 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 1 mA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 800 V, IE = 0 DC current transfer ratio hFE1 10 — — VCE = 5 V, IC = 10 mA hFE2 10 — — VCE = 5 V, IC = 100 mA Base to emitter voltage VBE — — 1.2 V VCE = 5 V, IC = 100 mA Collector to emitter saturation voltage VCE (sat) — — 5 V I C = 300 mA, IB = 60 mA Gain bandwidth product fT — 5 — MHz VCE = 20 V, IC = 50 mA Collector output capacitance Cob — 5 — pF VCB = 100 V, IE = 0, f = 1 MHz Maximum Collector Dissipation Curve Area of Safe Operation TC = 25°C (50 V, 0.5 A) 20 10 P C = 25 W 0.1 DC Operation (600 V, 0.042 A) (1,000 V, 0.015 A) 0 2 1.0 Collector current IC (A) Collector power dissipation Pc (W) 30 50 100 Case temperature TC (°C) 150 0.01 30 100 300 1,000 3,000 Collector to emitter voltage VCE (V) 2SD1527 Base to emitter saturation voltage VBE (sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 2 IC/IB = 10 Ta = 25°C Pulse test 1 0 1 2 5 10 20 50 100 200 Collector current IC (mA) 500 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 100 TC = 25°C VCE = 10 V 30 VCE = 5 V 10 3 1 2 5 10 20 50 100 Collector current IC (mA) 200 500 3 2SD1527 Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) 50 VCE = 20 V Pulse test 20 10 5 2 1.0 0.5 Collector to emitter saturation voltage VCE (sat) (V) 1 4 3 10 30 Collector current IC (mA) 100 Collector to Emitter Saturation Voltage vs. Collector Current 5 lC/lB = 10 Ta = 25°C Pulse test 2 1.0 0.5 0.2 0.1 0.05 1 2 5 10 20 50 100 Collector current IC (mA) 200 500 2SD1527 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 f = 1 MHz IE = 0 50 20 10 5 2 1 2 5 10 20 50 100 Collector to base voltage VCB (V) 200 5 2SD1527 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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