RENESAS 2SD1527

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2SD1527
Silicon NPN Triple Diffused
ADE-208-913 (Z)
1st. Edition
September 2000
Application
High voltage power amplifier
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
1000
V
Collector to emitter voltage
VCEO
1000
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
0.5
A
Collector power dissipation
PC
1.8
W
25
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SD1527
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
1000
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 800 V, IE = 0
DC current transfer ratio
hFE1
10
—
—
VCE = 5 V, IC = 10 mA
hFE2
10
—
—
VCE = 5 V, IC = 100 mA
Base to emitter voltage
VBE
—
—
1.2
V
VCE = 5 V, IC = 100 mA
Collector to emitter saturation
voltage
VCE (sat)
—
—
5
V
I C = 300 mA, IB = 60 mA
Gain bandwidth product
fT
—
5
—
MHz
VCE = 20 V, IC = 50 mA
Collector output capacitance
Cob
—
5
—
pF
VCB = 100 V, IE = 0, f = 1 MHz
Maximum Collector Dissipation Curve
Area of Safe Operation
TC = 25°C
(50 V, 0.5 A)
20
10
P
C
=
25
W
0.1
DC Operation
(600 V, 0.042 A)
(1,000 V, 0.015 A)
0
2
1.0
Collector current IC (A)
Collector power dissipation Pc (W)
30
50
100
Case temperature TC (°C)
150
0.01
30
100
300
1,000
3,000
Collector to emitter voltage VCE (V)
2SD1527
Base to emitter saturation voltage VBE (sat) (V)
Base to Emitter Saturation Voltage
vs. Collector Current
2
IC/IB = 10
Ta = 25°C
Pulse test
1
0
1
2
5 10 20
50 100 200
Collector current IC (mA)
500
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
100
TC = 25°C
VCE = 10 V
30
VCE = 5 V
10
3
1
2
5
10
20
50
100
Collector current IC (mA)
200
500
3
2SD1527
Gain Bandwidth Product
vs. Collector Current
Gain bandwidth product fT (MHz)
50
VCE = 20 V
Pulse test
20
10
5
2
1.0
0.5
Collector to emitter saturation voltage VCE (sat) (V)
1
4
3
10
30
Collector current IC (mA)
100
Collector to Emitter Saturation Voltage
vs. Collector Current
5
lC/lB = 10
Ta = 25°C
Pulse test
2
1.0
0.5
0.2
0.1
0.05
1
2
5
10
20
50
100
Collector current IC (mA)
200
500
2SD1527
Collector output capacitance Cob (pF)
Collector Output Capacitance
vs. Collector to Base Voltage
100
f = 1 MHz
IE = 0
50
20
10
5
2
1
2
5
10
20
50
100
Collector to base voltage VCB (V)
200
5
2SD1527
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
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this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
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Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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6
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