To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD2030, 2SD2031 Silicon NPN Epitaxial ADE-208-1163 (Z) 1st. Edition Mar. 2001 Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage Collector to emitter breakdown voltage Min Typ Max Unit Test conditions 2SD2030 V(BR)CBO 160 — — V I C = 10 µA, IE = 0 2SD2031 200 2SD2030 V(BR)CEO 160 — — V I C = 1 mA, RBE = ∞ 2SD2031 200 5 — — V I E = 10 µA, IC = 0 — — 10 µA VCB = 140 V, IE = 0 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO 2SD2030 I CBO 2SD2031 DC current transfer ratio VCB = 160 V, IE = 0 60 — 200 VCE = 5 V, IC = 10 mA hFE2 30 — — VCE = 5 V, IC = 1 mA Base to emitter voltage VBE — — 1.5 V VCE = 5 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) — — 0.5 V I C = 30 mA, IB = 3 mA Gain bandwidth product fT — 140 — MHz VCE = 5 V, IC = 10 mA Collector output capacitance Cob — 3.8 — pF VCB = 10 V, IE = 0, f = 1 MHz Note: hFE1* 1 1. The 2SD2030 and 2SD2031 are grouped by h FE1 as follows. Grade B C hFE1 60 to 120 100 to 200 2 2SD2030, 2SD2031 Typical Output Characteristics 20 Collector Current IC (mA) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 600 400 200 0 16 120 110 100 90 80 70 60 50 40 30 20 10 µA 12 8 4 0 50 100 150 Ambient Temperature Ta (°C) 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 100 500 10 5 DC Current Transfer Ratio hFE 5°C 20 –25 50 25 VCE = 5 V Pulse Test Ta = 7 Collector Current IC (mA) IB = 0 2 1 VCE = 5 V Pulse Test 200 Ta = 75°C 100 –25 50 25 20 10 5 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SD2030, 2SD2031 Gain Bandwidth Product vs. Collector Current 500 5 lC = 10 lB Pulse Test Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 2 VBE (sat) 1.0 0.5 Ta = –25°C 75 0.2 25 75 25 VCE (sat) Ta = 0.1 25°C – 0.05 1 2 5 10 20 50 Collector Current IC (mA) 100 VCE = 5 V Pulse Test 200 100 50 20 10 5 0.5 1.0 2 5 10 20 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 20 f = 1 MHz IE = 0 10 5 2 1.0 0.5 1 4 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 50 2SD2030, 2SD2031 Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 5 2SD2030, 2SD2031 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6