To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC5273 Silicon NPN Triple Diffused ADE-208-897 (Z) 1st. Edition September 2000 Application High voltage amplifier Features • High brakedown voltage V(BR)CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1300 V Collector to emitter voltage VCEO 1300 V Emitter to base voltage VEBO 6 V Collector current IC 30 mA Collector peak current I C(peak) 60 mA Collector power dissipation PC 1.8 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current I CES — — 10 µA VCE = 1300 V, RBE = 0 Collector cutoff current I CEO — — 100 µA VCE = 1300 V, RBE = Emitter cutoff current I EBO — — 10 µA VEB = 6 V, IC = 0 DC current transfer ratio hFE 10 — — Collector to emitter saturation voltage VCE(sat) — — 5.0 V I C = 10 mA, IB = 2 mA Gain bandwidth product fT — 5.5 — MHz VCE = 20 V, IC = 1 mA Collector output capacitance Cob — 3.4 — pF VCB = 100 V, IE = 0, f = 1 MHz 2 VCE = 5 V, IC = 1 mA 2SC5273 Maximum Collector Power Dissipation Curve Area of Safe Operation 100 I C (mA) ic(peak) Collector Current 3 2 1 0 50 100 150 Ambient Temperature Ta (°C) 50 I C max 20 10 0.5 0.2 200 DC Current Transfer Ratio vs. Collector Current 1.8 mA 1.6 mA I C (mA) Collector Current m A 0.8 m mA 0.6 A 0.4 m 10 A 0.2 m Pulse Test Ta = 25 °C 0 IB = 0 5 10 Collector to Emitter Voltage V CE (V) 100 h FE 0 2. mA 1.4 .2 mA 1 0 mA 1. DC Current Transfer Ratio A 1 shot pulse Ta = 25 °C 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) Typical Output Characteristics 20 s 1m = s n Pw 0 m tio 1 ra ) pe °C O 25 DC c = (T Collector Power Dissipation Pc (W) 4 50 75 °C 25 °C 20 10 Ta = –25 °C 5 2 1 0.1 Pulse Test VCE = 5 V 0.3 1 3 10 Collector Current I C (mA) 30 3 2SC5273 Base to Emitter Saturation Voltage vs. Collector Current 1 1 IC / I B= 5 Pulse Test Base to Emitter Saturation Voltage V BE(sat) (V) Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 0.5 0.2 75 °C 0.1 0.1 25 °C Ta = –25 °C 0.3 1 3 Collector Current 10 0.5 0.2 I C (mA) Gain Bandwidth Product f T (MHz) Collector Current I C (mA) 10 75 °C 25 °C Ta = –25 °C 0.3 0.1 0 V CE = 5 V Pulse Test 0.5 Base to Emitter Voltage V BE (V) 4 0.3 1 3 10 30 I C (mA) Gain Bandwidth Product vs. Collector Current 30 1 IC / I B= 5 Pulse Test Collector Current Collector Current vs. Base to Emitter Voltage 3 25 °C 75 °C 0.1 0.1 30 Ta = –25 °C 1 10 5 2 VCE = 20 V Pulse Test 1 0.1 0.2 0.5 1 Collector Current 2 5 I C (mA) 10 Collector Output Capacitance Cob (pF) 2SC5273 Collector Output Capacitance vs. Collector to Base Voltage 50 20 10 5 2 IE =0, f = 1MHz 1 1 2 5 10 20 50 100 Collector to Base Voltage V CB (V) 5 2SC5273 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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