To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. HSB2838 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-486A (Z) Rev.1 Mar. 2002 Features • Fast recovery time. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSB2838 A6 CMPAK Pin Arrangement 3 2 1 (Top View) 1. Anode 2. Anode 3. Cathode HSB2838 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V 100 mA 300 mA Average rectified current IO * Peak forward current 1 IFM * 1 2 Non-Repetitive peak forward surge current IFSM * 4 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Notes: 1. Two device total. 2. Value at duration of 1 µsec, two device total. Electrical Characteristics * (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 1.0 V IF = 10 mA VF2 1.0 IF = 50 mA VF3 1.2 IF = 100 mA Reverse current IR 0.1 µA VR = 80 V Capacitance C 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: Per one device. Rev.1, Mar. 2002, page 2 of 2 HSB2838 Main Characteristic 10-6 10-2 10-4 Reverse current IR (A) Forward current IF (A) 10-3 10-5 10-6 10-7 10-8 10-7 10-8 10-9 10-9 10-10 0 0.2 0.4 0.6 0.8 1.0 10-10 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 0.1 1.0 10 100 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.1, Mar. 2002, page 3 of 3 HSB2838 Package Dimensions As of July, 2001 0.1 0.3 +– 0.05 (0.65) (0.65) (0.2) 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 + 0.1 0.16 – 0.06 2.1 ± 0.3 0.1 0.3 +– 0.05 (0.425) 1.25 ± 0.1 2.0 ± 0.2 (0.425) Unit: mm 0 – 0.1 Hitachi Code JEDEC JEITA Mass (reference value) Rev.1, Mar. 2002, page 4 of 4 CMPAK — Conforms 0.006 g