To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD2124(L)/(S) Silicon NPN Epitaxial ADE-208-927 (Z) 1st. Edition September 2000 Application Low frequency power amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A Collector peak current I C(peak) 3.0 A 18 W 150 °C –55 to +150 °C 1.5 A 1 Collector power dissipation PC * Junction temperature Tj Storage temperature Tstg C to E diode forward current Note: ID* 1 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V I C = 0.1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 120 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 50 mA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 100 V, IE = 0 I CEO — — 10 VCE = 100 V, RBE = ∞ DC current transfer ratio hFE 2000 — 30000 VCE = 3 V, IC = 1 A*1 Collector to emitter saturation VCE(sat) — — 1.5 voltage VCE(sat) — — 2.0 Base to emitter saturation VBE(sat) — — 2.0 voltage VBE(sat) — — 2.5 C to E diode forward voltage VD — — 3.0 V I D = 1.5 A*1 Turn on time t on — 0.5 — µs I C = 1 A, IB1 = –IB2 = 1 mA Turn off time t off — 2.0 — µs Note: 2 1. Pulse test. V I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 V I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 2SD2124(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation 0 50 100 Case temperature TC (°C) IC(max) 1.0 0.3 0.1 0.03 Ta = 25°C 1 shot pulse 0.01 3 10 30 100 300 Collector to emitter voltage VCE (V) 150 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 30,000 1.2 200 180 160 140 120 µ A 0.8 0.4 IB = 0 0 TC = 25°C 4 6 8 10 2 Collector to emitter voltage VCE (V) DC current transfer ratio hFE Collector current IC (A) 2.0 1.6 µs 10 IiC(max) C(peak) 0 20 3.0 10 Collector current IC (A) 10 s s 1m 0m =1 n tio PW era ) Op 5°C DC = 2 (T C Collector power dissipation PC (W) 30 10,000 3,000 1,000 VCE = 3 V Ta = 25°C 300 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0 3 2SD2124(L)/(S) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 4 10 3 VBE(sat) 1.0 V CE(sat) 0.3 IC = 500 IB Ta = 25°C 0.1 0.03 0.3 0.1 1.0 Collector current IC (A) 3.0 2SD2124(L)/(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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