MX25L3275E

MX25L3275E
MX25L3275E
HIGH PERFORMANCE
SERIAL FLASH SPECIFICATION
P/N: PM1830
1
REV. 1.2, NOV. 07, 2013
MX25L3275E
Contents
1. FEATURES......................................................................................................................................................... 4
2. GENERAL DESCRIPTION................................................................................................................................ 6
Table 1. Read Performance ...................................................................................................................6
3. PIN CONFIGURATION....................................................................................................................................... 7
4. PIN DESCRIPTION............................................................................................................................................. 7
5. BLOCK DIAGRAM.............................................................................................................................................. 8
6. DATA PROTECTION........................................................................................................................................... 9
Table 2. Protected Area Sizes...............................................................................................................10
Table 3. 4K-bit Secured OTP Definition................................................................................................ 11
7. MEMORY ORGANIZATION.............................................................................................................................. 12
Table 4. Memory Organization..............................................................................................................12
8. DEVICE OPERATION....................................................................................................................................... 13
9. HOLD FEATURE............................................................................................................................................... 14
10. COMMAND DESCRIPTION............................................................................................................................ 15
Table 5. Command Sets........................................................................................................................15
10-1. Write Enable (WREN)...........................................................................................................................18
10-2. Write Disable (WRDI)............................................................................................................................19
10-3. Read Identification (RDID)....................................................................................................................20
10-4. Read Status Register (RDSR)..............................................................................................................21
10-5. Write Status Register (WRSR)..............................................................................................................24
Table 6. Protection Modes.....................................................................................................................25
10-6. Read Data Bytes (READ).....................................................................................................................27
10-7. Read Data Bytes at Higher Speed (FAST_READ)...............................................................................28
10-8. Dual Read Mode (DREAD)...................................................................................................................29
10-9. 2 x I/O Read Mode (2READ)................................................................................................................30
10-10.Quad Read Mode (QREAD).................................................................................................................31
10-11. 4 x I/O Read Mode (4READ)................................................................................................................32
10-12.Performance Enhance Mode................................................................................................................33
10-13.Performance Enhance Mode Reset (FFh)............................................................................................33
10-14.Sector Erase (SE).................................................................................................................................36
10-15.Block Erase (BE)..................................................................................................................................37
10-16.Block Erase (BE32K)............................................................................................................................38
10-17.Chip Erase (CE)....................................................................................................................................39
10-18.Page Program (PP)..............................................................................................................................40
10-19.4 x I/O Page Program (4PP).................................................................................................................41
10-20.Continuous Program mode (CP mode).................................................................................................44
10-21.Deep Power-down (DP)........................................................................................................................46
10-22.Release from Deep Power-down (RDP), Read Electronic Signature (RES)........................................47
10-23.Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4)......................................49
10-24.ID Read.................................................................................................................................................50
Table 7. ID Definitions ..........................................................................................................................50
10-25.Enter Secured OTP (ENSO).................................................................................................................50
10-26.Exit Secured OTP (EXSO)....................................................................................................................50
10-27.Read Security Register (RDSCUR)......................................................................................................51
Table 8. Security Register Definition.....................................................................................................52
P/N: PM1830
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REV. 1.2, NOV. 07, 2013
MX25L3275E
10-28.Write Security Register (WRSCUR)......................................................................................................53
10-29.Write Protection Selection (WPSEL).....................................................................................................53
10-30.Single Block Lock/Unlock Protection (SBLK/SBULK)...........................................................................57
10-31.Read Block Lock Status (RDBLOCK)...................................................................................................60
10-32.Gang Block Lock/Unlock (GBLK/GBULK)............................................................................................61
10-33.Enable SO to Output RY/BY# (ESRY)..................................................................................................62
10-34.Disable SO to Output RY/BY# (DSRY).................................................................................................62
10-35.No Operation (NOP).............................................................................................................................62
10-36.Software Reset (Reset-Enable (RSTEN) and Reset (RST))................................................................62
10-37.Read SFDP Mode (RDSFDP)...............................................................................................................63
Table 9. Signature and Parameter Identification Data Values ..............................................................64
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables..........................................................65
Table 11. Parameter Table (1): Macronix Flash Parameter Tables........................................................67
11. POWER-ON STATE........................................................................................................................................ 69
12. ELECTRICAL SPECIFICATIONS................................................................................................................... 70
12-1. ABSOLUTE MAXIMUM RATINGS........................................................................................................70
12-2.CAPACITANCE.....................................................................................................................................70
Table 12. DC CHARACTERISTICS......................................................................................................72
Table 13. AC CHARACTERISTICS.......................................................................................................73
13. TIMING ANALYSIS......................................................................................................................................... 75
Table 14. Power-Up Timing ..................................................................................................................77
13-1. INITIAL DELIVERY STATE...................................................................................................................77
14. OPERATING CONDITIONS............................................................................................................................ 78
15. ERASE AND PROGRAMMING PERFORMANCE......................................................................................... 80
16. DATA RETENTION......................................................................................................................................... 80
17. LATCH-UP CHARACTERISTICS................................................................................................................... 80
18. ORDERING INFORMATION........................................................................................................................... 81
19. PART NAME DESCRIPTION.......................................................................................................................... 82
20. PACKAGE INFORMATION............................................................................................................................. 83
21. REVISION HISTORY ...................................................................................................................................... 86
P/N: PM1830
3
REV. 1.2, NOV. 07, 2013
MX25L3275E
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY
1. FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 33,554,432 x 1 bit structure or 16,777,216 x 2 bits (two I/O mode) structure or 8,388,608 x 4 bits (four I/O
mode) structure
• 1024 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 128 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 64 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Default QE=1 (4 I/O) before factory shipping
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 86MHz with 4 dummy cycles for 2READ instruction
- 4 I/O: Up to 104MHz
- Configurable dummy cycle number for 4 I/O read operation
- Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)
- Byte program time: 12us (typical)
- Continuous Program mode (automatically increase address under word program mode)
- Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 10s(typ.) /
chip
• Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz
- Low active programming current: 15mA (typ.)
- Low active sector erase current: 10mA (typ.)
- Low standby current: 15uA (typ.)
- Deep power down current: 1uA (typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention
P/N: PM1830
4
REV. 1.2, NOV. 07, 2013
MX25L3275E
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- BP0-BP3 block group protect
- Flexible individual block protect when OTP WPSEL=1
- Additional 4K bits secured OTP for unique identifier
• Auto Erase and Auto Program Algorithms
- Automatically erases and verifies data at selected sector
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times
the program pulse width (Any page to be programmed should have page in the erased state first.)
• Status Register Feature
• Electronic Identification
- JEDEC 1-byte Manufacturer ID and 2-byte Device ID
- RES command for 1-byte Device ID
- The REMS,REMS2, REMS4 commands for 1-byte Manufacturer ID and 1-byte Device ID
• Support Serial Flash Discoverable Parameters (SFDP) mode
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O mode
• HOLD#/SIO3
- To pause the device without deselecting the device or serial data Input/Output for 4 x I/O mode
• PACKAGE
- 16-pin SOP (300mil)
- 8-pin SOP (200mil)
- 8-WSON (6x5mm)
- All devices are RoHS Compliant and Halogen-free
P/N: PM1830
5
REV. 1.2, NOV. 07, 2013
MX25L3275E
2. GENERAL DESCRIPTION
MX25L3275E is 32Mb bits serial Flash memory, which is configured as 4,194,304 x 8 internally. When it is in two
or four I/O mode, the structure becomes 16,777,216 bits x 2 or 8,388,608 bits x 4. MX25L3275E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O
mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.
MX25L3275E, MXSMIO® (Serial Multi I/O) flash memory, provides sequential read operation on whole chip and
multi-I/O features.
When it is in dual I/O mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input
and data output. When it is in quad I/O mode, the SI pin, SO pin, WP# pin and HOLD# pin become SIO0 pin,
SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data Input/Output.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for Continuous Program mode, and erase command is executed on sector (4K-byte),
block (32K-byte/64K-byte), or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status
read command can be issued to detect completion status of a program or erase operation via WIP bit.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25L3275E utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Read Performance
Numbers of Dummy Cycles
4 I/O
6
86*
8
104
Note: *means default status
P/N: PM1830
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REV. 1.2, NOV. 07, 2013
MX25L3275E
3. PIN CONFIGURATION
4. PIN DESCRIPTION
SYMBOL
DESCRIPTION
CS#
Chip Select
Serial Data Input (for 1xI/O)/ Serial
SI/SIO0 Data Input & Output (for 2xI/O or 4xI/O
mode)
Serial Data Output (for 1xI/O)/Serial
SO/SIO1 Data Input & Output (for 2xI/O or 4xI/O
mode)
SCLK
Clock Input
Write protection: connect to GND or
WP#/SIO2 Serial Data Input & Output (for 4xI/O
mode)
To pause the device without deselecting
HOLD#/
the device or Serial data Input/Output
SIO3
for 4 x I/O mode
VCC
+ 3.0V Power Supply
GND
Ground
NC
No Connection
16-PIN SOP (300mil)
1
2
3
4
5
6
7
8
HOLD#/SIO3
VCC
NC
NC
NC
NC
CS#
SO/SIO1
16
15
14
13
12
11
10
9
SCLK
SI/SIO0
NC
NC
NC
NC
GND
WP#/SIO2
8-PIN SOP (200mil)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
8
7
6
5
VCC
HOLD#/SIO3
SCLK
SI/SIO0
8-WSON (6x5mm)
CS#
SO/SIO1
WP#/SIO2
GND
P/N: PM1830
1
2
3
4
8
7
6
5
Note:
1. The HOLD# pin is internal pull high.
VCC
HOLD#/SIO3
SCLK
SI/SIO0
7
REV. 1.2, NOV. 07, 2013
MX25L3275E
5. BLOCK DIAGRAM
X-Decoder
Address
Generator
Memory Array
Page Buffer
SI/SIO0
Data
Register
Y-Decoder
SRAM
Buffer
Sense
Amplifier
CS#
WP#/SIO2
HOLD#/SIO3
SCLK
Mode
Logic
State
Machine
Clock Generator
Output
Buffer
SO/SIO1
P/N: PM1830
HV
Generator
8
REV. 1.2, NOV. 07, 2013
MX25L3275E
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC
power-up and power-down or from system noise.
• Valid command length checking: The command length will be checked whether it is at byte base and completed on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data. The WEL bit will return to reset stage under following situation:
- Power-up
- Write Disable (WRDI) command completion
- Write Status Register (WRSR) command completion
- Page Program (PP, 4PP) command completion
- Continuous Program mode (CP) instruction completion
- Sector Erase (SE) command completion
- Block Erase (BE, BE32K) command completion
- Chip Erase (CE) command completion
- Single Block Lock/Unlock (SBLK/SBULK) instruction completion
- Gang Block Lock/Unlock (GBLK/GBULK) instruction completion
• Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from Deep Power Down mode command (RDP) and Read Electronic
Signature command (RES).
I. Block lock protection
- The Software Protected Mode (SPM) uses (BP3, BP2, BP1, BP0) bits to allow part of memory to be protected as read only. The protected area definition is shown as table of "Table 2. Protected Area Sizes", the
protected areas are more flexible which may protect various areas by setting value of BP0-BP3 bits.
- The Hardware Protected Mode (HPM) uses WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and SRWD
bit. If the system goes into four I/O mode, the feature of HPM will be disabled.
- MX25L3275E provides individual block (or sector) write protect & unprotect. User may enter the mode with
WPSEL command and conduct individual block (or sector) write protect with SBLK instruction, or SBULK for
individual block (or sector) unprotect. Under the mode, user may conduct whole chip (all blocks) protect with
GBLK instruction and unlock the whole chip with GBULK instruction.
P/N: PM1830
9
REV. 1.2, NOV. 07, 2013
MX25L3275E
Table 2. Protected Area Sizes
Protected Area Sizes (T/B bit = 0)
Status bit
BP3
BP2
BP1
BP0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
Protected Area Sizes (T/B bit = 1)
Status bit
BP3
BP2
BP1
BP0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
Protect Level
32Mb
0 (none)
1 (1block, block 63rd)
2 (2blocks, block 62nd-63rd)
3 (4blocks, block 60th-63rd)
4 (8blocks, block 56th-63rd)
5 (16blocks, block 48th-63rd)
6 (32blocks, block 32nd-63rd)
7 (64blocks, protect all)
8 (64blocks, protect all)
9 (64blocks, protect all)
10 (64blocks, protect all)
11 (64blocks, protect all)
12 (64blocks, protect all)
13 (64blocks, protect all)
14 (64blocks, protect all)
15 (64blocks, protect all)
Protect Level
32Mb
0 (none)
1 (1block, block 0th)
2 (2blocks, block 0th-1st)
3 (4blocks, block 0th-3rd)
4 (8blocks, block 0th-7th)
5 (16blocks, block 0th-15th)
6 (32blocks, block 0th-31st)
7 (64blocks, protect all)
8 (64blocks, protect all)
9 (64blocks, protect all)
10 (64blocks, protect all)
11 (64blocks, protect all)
12 (64blocks, protect all)
13 (64blocks, protect all)
14 (64blocks, protect all)
15 (64blocks, protect all)
Note: The device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP3, BP2, BP1,
BP0) are 0.
P/N: PM1830
10
REV. 1.2, NOV. 07, 2013
MX25L3275E
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit One-Time Program area for setting
device unique serial number - Which may be set by factory or system maker.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with ENSO command), and
going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing EXSO command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to table of "Table 8. Security Register Definition" for security register bit definition and table of "Table 3. 4K-bit Secured OTP Definition" for address range
definition.
Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit Secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
P/N: PM1830
Address range
Size
Standard Factory Lock
xxx000~xxx00F
128-bit
ESN (electrical serial number)
xxx010~xxx1FF
3968-bit
N/A
11
Customer Lock
Determined by customer
REV. 1.2, NOV. 07, 2013
MX25L3275E
7. MEMORY ORGANIZATION
Table 4. Memory Organization
Block(64K-byte) Block(32K-byte)
Sector (4K-byte)
62
124
individual block
lock/unlock unit:64K-byte
123
61
122
3F7FFFh
individual 16 sectors
lock/unlock unit:4K-byte
…
3F8FFFh
3F7000h
1008
3F0000h
3F0FFFh
1007
3EF000h
3EFFFFh
…
125
3F8000h
1015
1000
3E8000h
3E8FFFh
999
3E7000h
3E7FFFh
…
126
1016
992
3E0000h
3E0FFFh
991
3DF000h
3DFFFFh
…
63
3FFFFFh
984
3D8000h
3D8FFFh
983
3D7000h
3D7FFFh
976
3D0000h
3D0FFFh
47
02F000h
02FFFFh
…
127
Address Range
3FF000h
…
1023
1
2
1
0
0
027FFFh
…
028FFFh
027000h
32
020000h
020FFFh
31
01F000h
01FFFFh
…
3
028000h
39
24
018000h
018FFFh
23
017000h
017FFFh
…
4
individual block
lock/unlock unit:64K-byte
40
16
010000h
010FFFh
15
00F000h
00FFFFh
…
2
8
008000h
008FFFh
7
007000h
007FFFh
000000h
000FFFh
0
P/N: PM1830
individual 16 sectors
lock/unlock unit:4K-byte
…
5
…
individual block
lock/unlock unit:64K-byte
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REV. 1.2, NOV. 07, 2013
MX25L3275E
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation.
2. When incorrect command is inputted to this LSI, this LSI becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this LSI should be High-Z.
3. When correct command is inputted to this LSI, this LSI becomes active mode and keeps the active mode until
next CS# rising edge.
4. For standard single data rate serial mode, input data is latched on the rising edge of Serial Clock(SCLK) and
data shifts out on the falling edge of SCLK. The difference of Serial mode 0 and mode 3 is shown as "Figure 1.
Serial Modes Supported (for Normal Serial mode)".
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, RDSFDP, 2READ, DREAD,
4READ, QREAD, RDBLOCK, RES, REMS, REMS2, and REMS4 the shifted-in instruction sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE, BE, BE32K, HPM, CE, PP, CP, 4PP, RDP, DP, WPSEL, SBLK,
SBULK, GBLK, GBULK, ENSO, EXSO, WRSCUR, ESRY and DSRY. The CS# must go high exactly at the
byte boundary; otherwise, the instruction will be rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported (for Normal Serial mode)
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while
not transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial
mode is supported.
P/N: PM1830
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REV. 1.2, NOV. 07, 2013
MX25L3275E
9. HOLD FEATURE
HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop
the operation of write status register, programming, or erasing in progress.
The operation of HOLD requires Chip Select (CS#) keeping low and starts on falling edge of HOLD# pin signal
while Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not
start until Serial Clock signal being low). The HOLD condition ends on the rising edge of HOLD# pin signal while
Serial Clock(SCLK) signal is being low( if Serial Clock signal is not being low, HOLD operation will not end until
Serial Clock being low).
Figure 2. Hold Condition Operation
CS#
SCLK
HOLD#
Hold
Condition
(standard)
Hold
Condition
(non-standard)
The Serial Data Output (SO) is high impedance, both Serial Data Input (SI) and Serial Clock (SCLK) are don't
care during the HOLD operation. If Chip Select (CS#) drives high during HOLD operation, it will reset the internal
logic of the device. To re-start communication with chip, the HOLD# must be at high and CS# must be at low.
Note: The HOLD feature is disabled during Quad I/O mode.
P/N: PM1830
14
REV. 1.2, NOV. 07, 2013
MX25L3275E
10. COMMAND DESCRIPTION
Table 5. Command Sets
Read Commands
I/O
1
Command
READ
(normal read)
1st byte
2nd byte
3rd byte
4th byte
5th byte
Action
I/O
Command
1st byte
2nd byte
3rd byte
4th byte
5th byte
03 (hex)
AD1(8)
AD2(8)
AD3(8)
n bytes read
out until CS#
goes high
1
FAST READ
(fast read
data)
0B (hex)
AD1(8)
AD2(8)
AD3(8)
Dummy(8)
n bytes read
out until CS#
goes high
1
2
2
2READ
DREAD
RDSFDP
(2 x I/O read (1I / 2O read
(Read SFDP)
command)
command)
5A (hex)
BB (hex)
3B (hex)
AD1
AD1(4)
AD1(8)
AD2
AD2(4)
AD2(8)
AD3
AD3(4)
AD3(8)
Dummy
Dummy(4)
Dummy(8)
Read SFDP n bytes read
mode
out by 2 x I/O
until CS# goes
high
4
4
4READ
W4READ
(4 x I/O read
command)
E7 (hex)
EB (hex)
AD1(2)
AD1(2)
AD2(2)
AD2(2)
AD3(2)
AD3(2)
Dummy(4)
Dummy*
Quad I/O read
Quad I/O
with 4 dummy
read with
cycles
configurable
dummy cycles
4
QREAD
6B (hex)
AD1(8)
AD2(8)
AD3(8)
Dummy(8)
Action
Note: *Dummy cycle number will be different, depending on the bit7 (DC) setting of Configuration Register.
Please refer to "Configuration Register" Table
P/N: PM1830
15
REV. 1.2, NOV. 07, 2013
MX25L3275E
Other Commands
Command
1st byte
2nd byte
3rd byte
4th byte
Action
Command
1st byte
2nd byte
3rd byte
4th byte
Action
Command
1st byte
2nd byte
3rd byte
4th byte
Action
P/N: PM1830
RDCR (read
WREN
WRDI
RDSR (read
configuration
(write enable) (write disable) status register)
register)
06 (hex)
04 (hex)
38 (hex)
AD1
AD2
AD3
sets the (WEL) resets the to read out the to read out the to write new quad input to
(WEL) write values of the values of the values of the program the
write enable
latch bit
enable latch status register configuration status register selected page
bit
register
BE 32K (block
BE (block
erase 32KB) erase 64KB)
05 (hex)
15 (hex)
CE (chip
erase)
PP (page
program)
WRSR
(write status/
4PP (quad
SE
configuration page program) (sector erase)
register)
01 (hex)
Values
Values
REMS (read
electronic
manufacturer
& device ID)
AB (hex)
90 (hex)
x
x
x
x
x
ADD (Note 2)
to read out
output the
1-byte Device Manufacturer
ID
ID & Device ID
RDID
RES (read
(read identificelectronic ID)
ation)
9F (hex)
outputs
JEDEC
ID: 1-byte
Manufacturer
ID & 2-byte
Device ID
16
REMS2 (read
electronic
manufacturer
& device ID)
EF (hex)
x
x
ADD
output the
Manufacturer
ID & Device ID
B9 (hex)
RDP (Release
from deep
power down)
AB (hex)
enters deep
power down
mode
release from
deep power
down mode
CP (continuous DP (Deep
program)
power down)
52 (hex)
D8 (hex)
60 or C7 (hex)
02 (hex)
AD (hex)
AD1
AD1
AD1
AD1
AD2
AD2
AD2
AD2
AD3
AD3
AD3
AD3
to erase the
to erase the to erase whole to program the continuously
selected 32KB selected 64KB
chip
selected page
program
whole chip,
block
block
the address is
automatically
increase
20 (hex)
AD1
AD2
AD3
to erase the
selected
sector
REMS4 (read
electronic
ENSO (enter
manufacturer secured OTP)
& device ID)
DF (hex)
B1 (hex)
x
x
ADD
output the
to enter the
Manufacturer 4K-bit secured
ID & device ID OTP mode
REV. 1.2, NOV. 07, 2013
MX25L3275E
Command
1st byte
2nd byte
3rd byte
4th byte
Action
COMMAND
1st byte
2nd byte
3rd byte
4th byte
Action
COMMAND
1st byte
2nd byte
3rd byte
4th byte
5th byte
Action
RDSCUR
WRSCUR
EXSO (exit
SBLK (single SBULK (single
(read security (write security
secured OTP)
block lock
block unlock)
register)
register)
C1 (hex)
2B (hex)
2F (hex)
36 (hex)
39 (hex)
AD1
AD1
AD2
AD2
AD3
AD3
individual
to exit the 4K- to read value to set the lockindividual
bit secured
of security
down bit as
block
block
"1" (once lock- (64K-byte)
(64K-byte)
OTP mode
register
or sector
or sector
down, cannot
(4K-byte)
be update) (4K-byte) write
protect
unprotect
GBULK (gang
block unlock)
NOP (No
Operation)
RSTEN
(Reset Enable)
98 (hex)
00 (hex)
66 (hex)
whole chip
unprotect
RST
(Reset
Memory)
99 (hex)
RDBLOCK
GBLK (gang
(block protect
block lock)
read)
3C (hex)
7E (hex)
AD1
AD2
AD3
read individual whole chip
block or sector write protect
write protect
status
WPSEL
ESRY (enable DSRY (disable
(Write Protect SO to output SO to output
Selection)
RY/BY#)
RY/BY#)
68 (hex)
70 (hex)
80 (hex)
to enter
to enable SO to disable SO
and enable
to output RY/ to output RY/
individal block BY# during CP BY# during CP
protect mode
mode
mode
Release Read
Enhanced
FF (hex)
All these
commands
FFh, 00h, AAh
or 55h will
escape the
performance
mode
Note 1: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SI/SIO1 which is different
from 1 x I/O condition.
Note 2: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 3: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the
hidden mode.
Note 4: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere,
the reset operation will be disabled.
P/N: PM1830
17
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-1.
Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP,
4PP, CP, SE, BE, BE32K, CE, WRSR, WRSCUR, WPSEL, SBLK, SBULK, GBLK and GBULK, which are intended to change the device content, should be set every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→ sending WREN instruction code→ CS# goes
high.
The SIO[3:1] are don't care in this mode.
Figure 3. Write Enable (WREN) Sequence (Command 06)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
06h
High-Z
SO
P/N: PM1830
18
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-2.
Write Disable (WRDI)
The Write Disable (WRDI) instruction is for resetting Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→ sending WRDI instruction code→ CS# goes high.
The WEL bit is reset by following situations:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status/Configuration Register (WRSR) instruction completion
- Page Program (PP, 4PP) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase (BE, BE32K) instruction completion
- Chip Erase (CE) instruction completion
- Continuous Program mode (CP) instruction completion
- Single Block Lock/Unlock (SBLK/SBULK) instruction completion
- Gang Block Lock/Unlock (GBLK/GBULK) instruction completion
Figure 4. Write Disable (WRDI) Sequence (Command 04)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
04h
High-Z
SO
P/N: PM1830
19
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-3.
Read Identification (RDID)
The RDID instruction is for reading the Manufacturer ID of 1-byte and followed by Device ID of 2-byte.
The Macronix Manufacturer ID is C2(hex), the memory type ID is 20(hex) as the first-byte Device ID, and the individual Device ID of second-byte ID are listed as table of "Table 7. ID Definitions".
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code → 24-bits ID data
out on SO→ to end RDID operation can use CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, so there's no effect on the
cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 5. Read Identification (RDID) Sequence (Command 9F)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
28 29 30 31
SCLK
Command
SI
9Fh
Manufacturer Identification
SO
High-Z
7
6
5
MSB
P/N: PM1830
3
2
1
Device Identification
0 15 14 13
3
2
1
0
MSB
20
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-4.
Read Status Register (RDSR)
The RDSR instruction is for reading Status Register. The Read Status Register can be read at any time (even
in program/erase/write status register condition) and continuously. It is recommended to check the Write in
Progress (WIP) bit before sending a new instruction when a program, erase, or write status register operation is
in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register
data out on SO.
The SIO[3:1] are don't care when during this mode.
Figure 6. Read Status Register (RDSR) Sequence (Command 05)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
command
05h
SI
SO
High-Z
Status Register Out
7
6
5
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
P/N: PM1830
4
Status Register Out
21
REV. 1.2, NOV. 07, 2013
MX25L3275E
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/
write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write
status register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/
write status register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable latch. When WEL bit sets to "1", which means the internal write enable latch is set, the device can accept
program/erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable
latch; the device will not accept program/erase/write status register instruction. The program/erase command will
be ignored and will reset WEL bit if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are
both set to 0 and available for next program/erase/operations, WIP bit needs to be confirm to be 0 before polling
WEL bit. After WIP bit confirmed, WEL bit needs to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as defined in "Table 2. Protected Area Sizes") of the device to against the program/erase instruction
without hardware protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the
Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to
against Page Program (PP), Sector Erase (SE), Block Erase (BE) and Chip Erase (CE) instructions (only if all
Block Protect bits set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default.
Which is un-protected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0", it performs non-Quad and WP# is enable. While
QE is "1", it performs Quad I/O mode and WP# is disabled. QE bit is set to "1" before factory shipping, in the other word, the system goes into four I/O mode (QE=1) before factory shipping, and the feature of HPM is disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, default value is "0". SRWD bit is operated together with Write Protection (WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and WP#/SIO2 pin signal is low stage. In the hardware protection mode,
the Write Status Register (WRSR) instruction is no longer accepted for execution and the SRWD bit and Block
Protect bits (BP3, BP2, BP1, BP0) are read only. The SRWD bit defaults to be "0".
Status Register
bit7
SRWD
(status
register write
protect)
bit6
QE
(Quad
Enable)
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
1= Quad
1=status
Enable
register write
(note 1)
(note 1)
(note 1)
(note 1)
0=not Quad
disable
Enable
Non-volatile Non-volatile Non-volatile Non-volatile Non-volatile Non-volatile
bit
bit
bit
bit
bit
bit
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enable
operation
0=not write 0=not in write
enable
operation
volatile bit
volatile bit
Note: See the "Table 2. Protected Area Sizes" .
P/N: PM1830
22
REV. 1.2, NOV. 07, 2013
MX25L3275E
Configuration Register
The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured
after the CR bit is set.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as “0”,
which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed.
Configuration Register
bit7
bit6
bit5
bit4
DC
(Dummy Cycle)
Reserved
Reserved
Reserved
(Note)
x
x
x
Volatile bit
x
x
x
bit3
TB
(top/bottom
selected)
0=Top area
protect
1=Bottom
area protect
(Default=0)
OTP
bit2
bit1
bit0
Reserved
Reserved
Reserved
x
x
x
x
x
x
Note: See "Dummy Cycle and Frequency Table", with "Don't Care" on other Reserved Configuration Registers.
Dummy Cycle and Frequency Table
DC
Numbers of Dummy
clock cycles
Quad I/O Fast Read
1
8
104
0 (default)
6
86
P/N: PM1830
23
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-5.
Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the
Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3,
BP2, BP1, BP0) bits to define the protected area of memory (as shown in "Table 2. Protected Area Sizes"). The
WRSR also can set or reset the Quad enable (QE) bit and set or reset the Status Register Write Disable (SRWD)
bit in accordance with Write Protection (WP#/SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of
the status register. The WRSR instruction cannot be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register data on SI→ CS# goes high.
Figure 7. Write Status Register (WRSR) Sequence (Command 01)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
SI
SO
P/N: PM1830
command
01h
High-Z
Status
Register In
7
6
5
4
3
2
Configuration
Register In
1
0 15 14 13 12 11 10 9
8
MSB
24
REV. 1.2, NOV. 07, 2013
MX25L3275E
The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The
Write in Progress (WIP) bit still can be checked out during the Write Status Register cycle is in progress. The
WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset.
Table 6. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP# and SRWD bit status
Memory
WP#=1 and SRWD bit=0, or
The protected area cannot
WP#=0 and SRWD bit=0, or
be programmed or erased.
WP#=1 and SRWD=1
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area cannot
be programmed or erased.
Note: As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown
in "Table 2. Protected Area Sizes".
As the table above showing, the summary of the Software Protected Mode (SPM) and Hardware Protected Mode
(HPM):
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0, is at software
protected mode (SPM)
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware protected mode (HPM). The data of the protected area is protected by software protected mode by BP3,
BP2, BP1, BP0 and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is
entered. If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only can use software protected mode via BP3, BP2, BP1, BP0.
If the system goes into four I/O mode, the feature of HPM will be disabled.
P/N: PM1830
25
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 8. WRSR flow
start
WREN command
RDSR command
WEL=1?
No
Yes
WRSR command
Write status register data
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Verify OK?
No
Yes
WRSR successfully
P/N: PM1830
WRSR fail
26
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-6.
Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out
on the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole
memory can be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been reached.
The sequence of issuing READ instruction is: CS# goes low→ sending READ instruction code→3-byte address
on SI →data out on SO→ to end READ operation can use CS# to high at any time during data out.
Figure 9. Read Data Bytes (READ) Sequence (Command 03)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI
03
24 ADD Cycles
A23 A22 A21
A3 A2 A1 A0
MSB
SO
Data Out 1
High-Z
D7 D6 D5 D4 D3 D2 D1 D0 D7
MSB
P/N: PM1830
Data Out 2
27
MSB
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-7.
Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be
at any location. The address is automatically increased to the next higher address after each byte data is shifted
out, so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to
0 when the highest address has been reached.
The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ instruction code→
3-byte address on SI→1-dummy byte (default) address on SI→ data out on SO→ to end FAST_READ operation
can use CS# to high at any time during data out.
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h,5Ah,F0h or 0Fh
can make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with
P[3:0]; likewise P[7:0]=FFh,00h,AAh or 55h and afterwards CS# is raised and then lowered, the system then will
escape from performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 10. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (104MHz)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
0Bh
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
4
3
2
1
0
7
MSB
MSB
P/N: PM1830
5
28
6
5
4
3
2
1
0
7
MSB
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-8.
Dual Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at
a maximum frequency fT. The first address byte can be at any location. The address is automatically increased
to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single
DREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing DREAD instruction is: CS# goes low → sending DREAD instruction → 3-byte address
on SI → 8-bit dummy cycle → data out interleave on SO1 & SO0 → to end DREAD operation can use CS# to
high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle.
Figure 11. Dual Read Mode Sequence (Command 3B)
CS#
0
1
2
3
4
5
6
7
8
…
Command
SI/SIO0
SO/SIO1
P/N: PM1830
30 31 32
9
SCLK
3B
…
24 ADD Cycle
A23 A22
…
High Impedance
39 40 41 42 43 44 45
A1 A0
8 dummy
cycle
Data Out
1
Data Out
2
D6 D4 D2 D0 D6 D4
D7 D5 D3 D1 D7 D5
29
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-9.
2 x I/O Read Mode (2READ)
The 2READ instruction enables Double Transfer Rate of Serial Flash in read mode. The address is latched on
rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at
a maximum frequency fT. The first address byte can be at any location. The address is automatically increased
to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single
2READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 24-bit address interleave on SIO1 & SIO0→ 4-bit dummy cycle on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end
2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 12. 2 x I/O Read Mode Sequence (Command BB)
CS#
0
1
2
3
4
5
6
7
8
SCLK
…
Command
SI/SIO0
SO/SIO1
18 19 20 21 22 23 24 25 26 27 28 29
9
BB(hex)
High Impedance
12 ADD Cycle
4 dummy
cycle
Data Out
1
Data Out
2
A22 A20
…
A2 A0 P2 P0
D6 D4 D2 D0 D6 D4
A23 A21
…
A3 A1 P3 P1
D7 D5 D3 D1 D7 D5
Note: SI/SIO0 or SO/SIO1 should be kept "0h" or "Fh" in the first two dummy cycles. In other words, P2=P0 or
P3=P1 is necessary.
P/N: PM1830
30
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-10. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fQ. The first address byte can be at any location. The address is automatically increased
to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single
QREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte address
on SI → 8-bit dummy cycle → data out interleave on SO3, SO2, SO1 & SO0→ to end QREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle.
Figure 13. Quad Read Mode Sequence (Command 6B)
CS#
0
1
2
3
4
5
6
7
8
SCLK
…
Command
SI/SO0
SO/SO1
WP#/SO2
HOLD#/SO3
P/N: PM1830
29 30 31 32 33
9
6B
…
24 ADD Cycles
A23 A22
High Impedance
…
38 39 40 41 42
A2 A1 A0
8 dummy cycles
Data Data
Out 1 Out 2
Data
Out 3
D4 D0 D4 D0 D4
D5 D1 D5 D1 D5
High Impedance
D6 D2 D6 D2 D6
High Impedance
D7 D3 D7 D3 D7
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MX25L3275E
10-11. 4 x I/O Read Mode (4READ)
The 4READ instruction enables quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of
SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum
frequency fQ. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4READ
instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→ 24-bit address interleave on SIO3, SIO2, SIO1 & SIO0→2+4 dummy cycles (default)→data out interleave on SIO3, SIO2, SIO1 &
SIO0→ to end 4READ operation can use CS# to high at any time during data out.
W4READ instruction (E7) is also available for 4 I/O read. The sequence is similar to 4READ, but with only 4
dummy cycles. The clock rate runs at 54MHz.
Figure 14. 4 x I/O Read Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
8 Bit Instruction
SI/SIO0
SO/SIO1
WP#/SIO2
HOLD#/SIO3
6 Address cycles
Configurable
Dummy cycles
(Note 3)
Performance
enhance
indicator (Note 2)
Data Output
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
High Impedance
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
High Impedance
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
High Impedance
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
EBh
Note:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
3. The Configurable Dummy Cycle is set by Configuration Register Bit. Please see "Dummy Cycle and Frequency Table"
P/N: PM1830
32
REV. 1.2, NOV. 07, 2013
MX25L3275E
Another sequence of issuing 4READ instruction especially useful in random access is : CS# goes low→ sending
4READ instruction→ 3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling
bit P[7:0]→ 4 dummy cycles (default)→ data out still CS# goes high → CS# goes low (reduce 4 Read instruction) → 24-bit random access address (Please refer to "Figure 15. 4 x I/O Read enhance performance Mode Sequence (Command EB)").
In the performance-enhancing mode (Notes of "Figure 15. 4 x I/O Read enhance performance Mode Sequence
(Command EB)"), P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh can make this
mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0]; likewise
P[7:0]=FFh, 00h, AAh or 55h. These commands will reset the performance enhance mode. And afterwards CS#
is raised and then lowered, the system then will return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle.
10-12. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles. (Please note
"Figure 15. 4 x I/O Read enhance performance Mode Sequence (Command EB)")
Please be noticed that “EBh” and “E7h” commands support enhance mode. The performance enhance mode is
not supported in dual I/O mode.
After entering enhance mode, following CSB go high, the device will stay in the read mode and treat CSB go low
of the first clock as address instead of command cycle.
To exit enhance mode, a new fast read command whose first two dummy cycles is not toggle then exit. Or issue
”FFh” command to exit enhance mode.
10-13. Performance Enhance Mode Reset (FFh)
To conduct the Performance Enhance Mode Reset operation, FFh command code, 8 clocks, should be issued in
1I/O sequence.
If the system controller is being Reset during operation, the flash device will return to the standard operation.
Upon Reset of main chip, Instruction would be issued from the system. Instructions like Read ID (9Fh) or Fast
Read (0Bh) would be issued.
The SIO[3:1] are don't care when during this mode.
P/N: PM1830
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MX25L3275E
Figure 15. 4 x I/O Read enhance performance Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
8 Bit Instruction
6 Address cycles
Configurable
Dummy cycles
(Note 2)
Performance
Data Output
enhance
indicator (Note1)
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
High Impedance
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
High Impedance
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
High Impedance
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
EBh
SI/SIO0
SO/SIO1
WP#/SIO2
HOLD#/SIO3
CS#
n+1
...........
n+7 ...... n+9
........... n+13
...........
SCLK
6 Address cycles
Configurable
Dummy cycles
(Note 2)
Data Output
Performance
enhance
indicator (Note1)
SI/SIO0
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
SO/SIO1
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
WP#/SIO2
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
HOLD#/SIO3
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
Note:
1. Performance enhance mode, if P7≠P3 & P6≠P2 & P5≠P1 & P4≠P0 (Toggling), ex: A5, 5A, 0F, if not using
performance enhance recommend to keep 1 or 0 in performance enhance indicator.
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF
2. The Configurable Dummy Cycle is set by Configuration Register Bit. Please see "Dummy Cycle and Frequency Table"
P/N: PM1830
34
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 16. Performance Enhance Mode Reset for Fast Read Quad I/O
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
P/N: PM1830
０ 1
2
3
4
5
6
Mode ０
7
Mode 3
Mode ０
IO0
FFh
IO1
Don’t Care
IO2
Don’t Care
IO3
Don’t Care
35
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-14. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used
for any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL)
bit before sending the Sector Erase (SE). Any address of the sector (see "Table 4. Memory Organization" ) is a
valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the latest
eighth of address byte has been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing SE instruction is: CS# goes low → sending SE instruction code→ 3-byte address on SI
→CS# goes high.
The SIO[3:1] are don't care when during this mode.
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked out during the Sector Erase cycle is in progress. The WIP sets 1 during
the tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset.
If the sector is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected
(no change) and the WEL bit still be reset.
Figure 17. Sector Erase (SE) Sequence (Command 20)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
24 Bit Address
Command
SI
23 22
20h
2
1
0
MSB
P/N: PM1830
36
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-15. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
64K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE). Any address of the block (see Table 4. Memory Organization) is a valid
address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the latest eighth
of address byte has been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low → sending BE instruction code → 3-byte address on
SI → CS# goes high.
The SIO[3:1] are don't care when during this mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked out during the Sector Erase cycle is in progress. The WIP sets 1 during
the tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset.
If the block is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected (no
change) and the WEL bit still be reset.
Figure 18. Block Erase (BE) Sequence (Command D8)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24 Bit Address
23 22
D8h
2
1
0
MSB
P/N: PM1830
37
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-16. Block Erase (BE32K)
The Block Erase (BE32) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 32K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE32). Any address of the block (see "Table 4. Memory Organization" ) is a valid address for Block Erase (BE32) instruction. The CS# must go high exactly at the byte
boundary (the latest eighth of address byte has been latched-in); otherwise, the instruction will be rejected and
not executed.
The sequence of issuing BE32 instruction is: CS# goes low → sending BE32 instruction code → 3-byte address
on SI → CS# goes high.
The SIO[3:1] are don't care when during this mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked out during the Sector Erase cycle is in progress. The WIP sets 1 during
the tBE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset.
If the block is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected (no
change) and the WEL bit still be reset.
Figure 19. Block Erase 32KB (BE32K) Sequence (Command 52)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24 Bit Address
23 22
52h
2
1
0
MSB
P/N: PM1830
38
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-17. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low → sending CE instruction code → CS# goes high.
The SIO[3:1] are don't care when during this mode.
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked out during the Chip Erase cycle is in progress. The WIP sets 1 during the
tCE timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
chip is protected the Chip Erase (CE) instruction will not be executed, but WEL will be reset.
Figure 20. Chip Erase (CE) Sequence (Command 60 or C7)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
P/N: PM1830
60h or C7h
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REV. 1.2, NOV. 07, 2013
MX25L3275E
10-18. Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must execute to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device
programs only the last 256 data bytes sent to the device. The last address byte (the 8 least significant address
bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that
exceed page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently
selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the
request page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256,
the data will be programmed at the request address of the page. There will be no effort on the other data bytes of
the same page.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on
SI→ at least 1-byte on data on SI→ CS# goes high.
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary (the latest eighth bit of data being latched in), otherwise, the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write
in Progress (WIP) bit still can be checked out during the Page Program cycle is in progress. The WIP sets 1
during the tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit
is reset. If the page is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be
protected (no change) and the WEL bit will still be reset.
The SIO[3:1] are don't care when during this mode.
Figure 21. Page Program (PP) Sequence (Command 02)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
1
0
7
6
5
3
2
1
0
2079
2
2078
3
2077
23 22 21
02h
SI
Data Byte 1
2076
24-Bit Address
2075
Command
4
1
0
MSB
MSB
2074
2073
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
CS#
SCLK
Data Byte 2
SI
7
6
MSB
P/N: PM1830
5
4
3
2
Data Byte 3
1
0
7
6
5
MSB
4
3
2
Data Byte 256
1
0
7
6
5
4
3
2
MSB
40
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-19. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1"
before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3, which can raise programmer performance and the effectiveness of application of lower clock
less than 104MHz. For system with faster clock, the Quad page program cannot provide more actual favors,
because the required internal page program time is far more than the time data flows in. Therefore, we suggest
that while executing this command (especially during sending data), user can slow the clock speed down to
104MHz below. The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→ CS# goes high.
If the page is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected (no
change) and the WEL bit will still be reset.
Figure 22. 4 x I/O Page Program (4PP) Sequence (Command 38)
CS#
0
1
2
3
4
5
6
7
8
SCLK
…
Command
6 ADD cycles
Data
Byte 256
Data Data
Byte 1 Byte 2
A20 A16 A12 A8 A4 A0 D4 D0 D4 D0
…
D4 D0
SO/SIO1
A21 A17 A13 A9 A5 A1 D5 D1 D5 D1
…
D5 D1
WP#/SIO2
A22 A18 A14 A10 A6 A2 D6 D2 D6 D2
…
D6 D2
HOLD#/SIO3
A23 A19 A15 A11 A7 A3 D7 D3 D7 D3
…
D7 D3
SI/SIO0
P/N: PM1830
524 525
9 10 11 12 13 14 15 16 17
38
41
REV. 1.2, NOV. 07, 2013
MX25L3275E
The Program/Erase function instruction function flow is as follows:
Figure 23. Program/Erase Flow(1) with read array data
Start
WREN command
RDSR command*
No
WEL=1?
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
No
WIP=0?
Yes
Read array data
(same address of PGM/ERS)
Verify OK?
No
Yes
Program/erase fail
Program/erase successfully
Program/erase
another block?
No
Yes
*
* Issue RDSR to check BP[3:0].
* If WPSEL=1, issue RDBLOCK to check the block status.
Program/erase completed
P/N: PM1830
42
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 24. Program/Erase Flow(2) without read array data
Start
WREN command
RDSR command*
No
WEL=1?
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
No
WIP=0?
Yes
RDSCUR command
REGPFAIL/REGEFAIL=1?
Yes
No
Program/erase fail
Program/erase successfully
Program/erase
Yes
another block?
* Issue RDSR to check BP[3:0].
* If WPSEL=1, issue RDBLOCK to check the block status.
No
Program/erase completed
P/N: PM1830
43
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-20. Continuous Program mode (CP mode)
The CP mode may enhance program performance by automatically increasing address to the next higher address after each byte data has been programmed.
The Continuous Program (CP) instruction is for multiple bytes program to Flash. A write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Continuous Program (CP)
instruction. CS# requires to go high before CP instruction is executing. After CP instruction and address input,
two bytes of data is input sequentially from MSB(bit7) to LSB(bit0). The first byte data will be programmed to the
initial address range with A0=0 and second byte data with A0=1. If only one byte data is input, the CP mode will
not process. If more than two bytes data are input, the additional data will be ignored and only two byte data are
valid. Any byte to be programmed should be in the erase state (FF) first. It will not roll over during the CP mode,
once the last unprotected address has been reached, the chip will exit CP mode and reset write Enable Latch bit
(WEL) as "0" and CP mode bit as "0". Please check the WIP bit status if it is not in write progress before entering next valid instruction. During CP mode, the valid commands are CP command (AD hex), WRDI command (04
hex), RDSR command (05 hex), and RDSCUR command (2B hex). And the WRDI command is valid after completion of a CP programming cycle, which means the WIP bit=0.
The sequence of issuing CP instruction is : CS# goes low → sending CP instruction code → 3-byte address on
SI pin → two data bytes on SI → CS# goes high to low → sending CP instruction and then continue two data
bytes are programmed → CS# goes high to low → till last desired two data bytes are programmed → CS# goes
high to low →sending WRDI (Write Disable) instruction to end CP mode → send RDSR instruction to verify if
CP mode word program ends, or send RDSCUR to check bit4 to verify if CP mode ends.
Three methods to detect the completion of a program cycle during CP mode:
1) Software method-I: by checking WIP bit of Status Register to detect the completion of CP mode.
2) Software method-II: by waiting for a tBP time out to determine if it may load next valid command or not.
3) Hardware method: by writing ESRY (enable SO to output RY/BY#) instruction to detect the completion of a
program cycle during CP mode. The ESRY instruction must be executed before CP mode execution. Once
it is enable in CP mode, the CS# goes low will drive out the RY/BY# status on SO, "0" indicates busy stage,
"1" indicates ready stage, SO pin outputs tri-state if CS# goes high. DSRY (disable SO to output RY/BY#)
instruction to disable the SO to output RY/BY# and return to status register data output during CP mode.
Please note that the ESRY/DSRY commands are not accepted unless the completion of CP mode.
If the page is protected by BP3~0 (WPSEL=0) or by individual lock (WPSEL=1), the array data will be protected (no change) and the WEL bit will still be reset.
P/N: PM1830
44
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 25. Continously Program (CP) Mode Sequence with Hardware Detection (Command AD)
CS#
0 1
6 7 8 9
30 31 31 32
47 48
0 1
6 7 8
20 21 22 23 24
0
7
0
7 8
SCLK
Command
SI
S0
AD (hex)
24-bit address
Valid
Command (1)
data in
Byte 0, Byte1
high impedance
data in
Byte n-1, Byte n
04 (hex)
05 (hex)
status (2)
Notes: (1) During CP mode, the valid commands are CP command (AD hex), WRDI command (04 hex), RDSR
command (05 hex), RDSCUR command (2B hex), RSTEN command (66 hex) and RST command (99hex).
(2) Once an internal programming operation begins, CS# goes low will drive the status on the SO pin and CS#
goes high will return the SO pin to tri-state.
(3) To end the CP mode, either reaching the highest unprotected address or sending Write Disable (WRDI)
command (04 hex) may achieve it and then it is recommended to send RDSR command (05 hex) to verify if
CP mode is ended. Please be noticed that Software reset and Hardware reset can end the CP mode.
P/N: PM1830
45
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-21. Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (to entering the Deep Power-down mode), the standby current is reduced from ISB1 to ISB2). The Deep Power-down
mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is
not active and all Write/Program/Erase instructions are ignored. When CS# goes high, it's only in standby mode
not deep power-down mode. It's different from Standby mode.
The sequence of issuing DP instruction is: CS# goes low→ sending DP instruction code→ CS# goes high.
The SIO[3:1] are don't care when during this mode.
Once the DP instruction is set, all instructions will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction. (those instructions allow the ID being reading out). When
Power-down, the deep power-down mode automatically stops, and when power-up, the device automatically is
in standby mode. For RDP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of
instruction code has been latched-in); otherwise, the instruction will not be executed. As soon as Chip Select (CS#)
goes high, a delay of tDP is required before entering the Deep Power-down mode and reducing the current to
ISB2.
Figure 26. Deep Power-down (DP) Sequence (Command B9)
CS#
0
1
2
3
4
5
6
7
tDP
SCLK
Command
SI
B9h
Stand-by Mode
P/N: PM1830
46
Deep Power-down Mode
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-22. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (CS#) High. When
Chip Select (CS#) is driven High, the device is put in the standby Power mode. If the device was not previously
in the Deep Power-down mode, the transition to the standby Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the standby Power mode is delayed by tRES2,
and Chip Select (CS#) must remain High for at least tRES2(max), as specified in "Table 13. AC CHARACTERISTICS". Once in the standby mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as "Table 7.
ID Definitions". This is not the same as RDID instruction. It is not recommended to use for new design. For new
design, please use RDID instruction. Even in Deep power-down mode, the RDP and RES are also allowed to
be executed, only except the device is in progress of program/erase/write cycles; there's no effect on the current
program/erase/write cycles in progress.
The SIO[3:1] are don't care when during this mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously
in Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high
at least tRES2(max). Once in the standby mode, the device waits to be selected, so it can receive, decode, and
execute instruction.
The RDP instruction is for releasing from Deep Power-down Mode.
Figure 27. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command
AB)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Command
SI
ABh
tRES2
3 Dummy Bytes
23 22 21
3
2
1
0
MSB
SO
Electronic Signature Out
High-Z
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
P/N: PM1830
47
Stand-by Mode
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 28. Release from Deep Power-down (RDP) Sequence (Command AB)
CS#
0
1
2
3
4
5
6
tRES1
7
SCLK
Command
SI
SO
ABh
High-Z
Deep Power-down Mode
P/N: PM1830
48
Stand-by Mode
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-23. Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4)
The REMS, REMS2, and REMS4 instruction provides both the JEDEC assigned Manufacturer ID and the specific Device ID.
The instruction is initiated by driving the CS# pin low and shift the instruction code "90h", "DFh" or "EFh" followed by two dummy bytes and one byte address (A7~A0). After which, the Manufacturer ID for Macronix (C2h)
and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in
the figure below. The Device ID values are listed in "Table 7. ID Definitions". If the one-byte address is initially
set to 01h, then the Device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and
Device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving
CS# high.
Figure 29. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90 or EF or DF)
CS#
0 1 2 3 4 5 6 7 8 9 10
SCLK
Command
SI
SO
90
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
24 ADD Cycles
A23 A22 A21
A3 A2 A1 A0
Manufacturer ID
High-Z
Device ID
D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0
MSB
MSB
MSB
Notes:
1. A0=0 will output the Manufacturer ID first and A0=1 will output Device ID first. A1~A23 are don't care.
2. Instruction is either 90(hex) or EF(hex) or DF(hex).
P/N: PM1830
49
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-24. ID Read
User can execute this ID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue
ID instruction is CS# goes low→sending ID instruction→Data out on SO→CS# goes high. Most significant bit (MSB)
first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer
ID, memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 7. ID Definitions
Command Type
RDID
manufacturer ID
C2
RES
REMS/REMS2/
REMS4
manufacturer ID
C2
MX25L3275E
memory type
20
electronic ID
15
device ID
15
memory density
16
10-25. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit Secured OTP mode. The additional 4K-bit Secured
OTP is independent from main array, which may use to store unique serial number for system identifier. After
entering the Secured OTP mode, and then follow standard read or program procedure to read out the data or
update data. The Secured OTP data cannot be updated again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
The SIO[3:1] are don't care when during this mode.
Please note that WRSR/WRSCUR/WPSEL/SBLK/GBLK/SBULK/GBULK/CE/BE/SE/BE32K commands are not
acceptable during the access of secure OTP region, once Security OTP is locked down, only read related commands are valid.
10-26. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit Secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
The SIO[3:1] are don't care when during this mode.
P/N: PM1830
50
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-27. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→ sending RDSCUR instruction → Security
Register data out on SO→ CS# goes high.
The SIO[3:1] are don't care when during this mode.
Figure 30. Read Security Register (RDSCUR) Sequence (Command 2B)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
command
2B
SI
SO
High-Z
Security Register Out
7
6
5
4
3
2
1
Security Register Out
0
7
6
5
4
3
2
1
0
7
MSB
MSB
The definition of the Security Register is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory before ex- factory
or not. When it is "0", it indicates non-factory lock; "1" indicates factory- lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured
OTP area cannot be updated any more. While it is in 4K-bit Secured OTP mode, array access is not allowed.
Continuous Program Mode (CP mode) bit. The Continuous Program Mode bit indicates the status of CP mode,
"0" indicates not in CP mode; "1" indicates in CP mode.
Program Fail Flag bit. While a program failure happened, the Program Fail Flag bit would be set. If the program
operation fails on a protected memory region or locked OTP region, this bit will also be set. This bit can be the
failure indication of one or more program operations. This fail flag bit will be cleared automatically after the next
successful program operation.
Erase Fail Flag bit. While an erase failure happened, the Erase Fail Flag bit would be set. If the erase operation fails on a protected memory region or locked OTP region, this bit will also be set. This bit can be the failure
indication of one or more erase operations. This fail flag bit will be cleared automatically after the next successful
erase operation.
P/N: PM1830
51
REV. 1.2, NOV. 07, 2013
MX25L3275E
Write Protection Select bit. The Write Protection Select bit indicates that WPSEL has been executed successfully. Once this bit has been set (WPSEL=1), all the blocks or sectors will be write-protected after the poweron every time. Once WPSEL has been set, it cannot be changed again, which means it's only for individual WP
mode.
Under the individual block protection mode (WPSEL=1), hardware protection is performed by driving WP#=0.
Once WP#=0, all array blocks/sectors are protected regardless of the contents of SRAM lock bits.
Table 8. Security Register Definition
bit7
bit6
bit5
bit4
Continuously
Program
mode
(CP mode)
WPSEL
E_FAIL
P_FAIL
0=normal
WP mode
0=normal
Erase
succeed
0=normal
Program
succeed
1=individual
1=indicate
WP mode
Erase failed
(default=0)
(default=0)
bit3
Reserved
bit2
bit1
bit0
Reserved
LDSO
(lock-down
4K-bit Secured OTP)
4K-bit
Secured
OTP
0 = not
lockdown
0=normal
Program
mode
1=indicate
Program
failed
(default=0)
1=CP mode
(default=0)
-
-
0=
nonfactory
lock
1 = lockdown
(cannot
program/
erase
OTP)
1 = factory
lock
non-volatile
bit
volatile bit
volatile bit
volatile bit
volatile bit
volatile bit
non-volatile
bit
non-volatile
bit
OTP
Read Only
Read Only
Read Only
Read Only
Read Only
OTP
Read Only
P/N: PM1830
52
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-28. Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN instruction is required
before sending WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit) for
customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes
high.
The SIO[3:1] are don't care when during this mode.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
Figure 31. Write Security Register (WRSCUR) Sequence (Command 2F)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
SO
2F
High-Z
10-29. Write Protection Selection (WPSEL)
There are two write protection methods, (1) BP protection mode (2) individual block protection mode. If
WPSEL=0, flash is under BP protection mode. If WPSEL=1, flash is under individual block protection mode. The
default value of WPSEL is “0”. WPSEL command can be used to set WPSEL=1. Please note that WPSEL is an
OTP bit. Once WPSEL is set to 1, there is no chance to recovery WPSEL back to “0”. If the flash is put on
BP mode, the individual block protection mode is disabled. Contrarily, if flash is on the individual block protection
mode, the BP mode is disabled.
The SIO[3:1] are don't care when during this mode.
Every time after the system is powered-on, and the Security Register bit 7 is checked to be WPSEL=1,
all the blocks or sectors will be write protected by default. User may only unlock the blocks or sectors via
SBULK and GBULK instruction. Program or erase functions can only be operated after the Unlock instruction is
conducted.
BP protection mode, WPSEL=0:
ARRAY is protected by BP3~BP0 and BP3~BP0 bits are protected by “SRWD=1 and WP#=0”, where SRWD is
bit 7 of status register that can be set by WRSR command.
P/N: PM1830
53
REV. 1.2, NOV. 07, 2013
MX25L3275E
Individual block protection mode, WPSEL=1:
Blocks are individually protected by their own SRAM lock bits which are set to “1” after power up. SBULK and
SBLK command can set SRAM lock bit to “0” and “1”. When the system accepts and executes WPSEL instruction, the bit 7 in security register will be set. It will activate SBLK, SBULK, RDBLOCK, GBLK, GBULK, PBLK,
RDPBLK etc instructions to conduct block lock protection and replace the original Software Protect Mode (SPM)
use (BP3~BP0) indicated block methods. Under the individual block protection mode (WPSEL=1), hardware
protection is performed by driving WP#=0. Once WP#=0, all array blocks/sectors are protected regardless of the
contents of SRAM lock bits.
The WREN (Write Enable) instruction is required before issuing WPSEL instruction.
The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual block protect mode → CS# goes high.
Figure 32. Write Protection Selection (WPSEL) Sequence (Command 68)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
68
WPSEL instruction function flow is as follows:
Figure 33. BP and SRWD if WPSEL=0
WPB pin
BP3
BP2
BP1
BP0
SRWD
64KB
64KB
64KB
(1) BP3~BP0 is used to define the protection group region.
(The protected area size see "Table 2. Protected Area Sizes" )
(2) “SRWD=1 and WPB=0” is used to protect BP3~BP0. In this
case, SRWD and BP3~BP0 of status register bits can not be
changed by WRSR
.
.
.
64KB
P/N: PM1830
54
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 34. The individual block lock mode is effective after setting WPSEL=1
SRAM
SRAM
…
…
TOP 4KBx16
Sectors
4KB
4KB
4KB
SRAM
SRAM
…
64KB
SRAM
…
……
Uniform
64KB blocks
64KB
4KB
SRAM
…
…
Bottom
4KBx16
Sectors
4KB
SRAM
• Power-Up: All SRAM bits=1 (all blocks are default protected).
All arrays cannot be programmed/erased
• SBLK/SBULK(36h/39h):
- SBLK(36h) : Set SRAM bit=1 (protect) : array can not be programmed /erased
- SBULK(39h): Set SRAM bit=0 (unprotect): array can be programmed /erased
- All top 4KBx16 sectors and bottom 4KBx16 sectors and other 64KB uniform blocks can be protected and unprotected SRAM bits individually by SBLK/SBULK command set.
• GBLK/ GBULK(7Eh/98h):
- GBLK(7Eh):Set all SRAM bits=1,whole chip are protected and cannot be programmed / erased.
- GBULK(98h):Set all SRAM bits=0,whole chip are unprotected and can be programmed / erased.
- All sectors and blocks SRAM bits of whole chip can be protected and unprotected at one time by GBLK/GBULK command set.
• RDBLOCK(3Ch):
- use RDBLOCK mode to check the SRAM bits status after SBULK /SBLK/GBULK/GBLK command set.
SBULK / SBLK / GBULK / GBLK / RDBLOCK
P/N: PM1830
55
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 35. WPSEL Flow
start
RDSCUR(2Bh) command
Yes
WPSEL=1?
No
WPSEL disable,
block protected by BP[3:0]
WPSEL(68h) command
RDSR command
WIP=0?
No
Yes
RDSCUR(2Bh) command
WPSEL=1?
No
Yes
WPSEL set successfully
WPSEL set fail
WPSEL enable.
Block protected by individual lock
(SBLK, SBULK, … etc).
P/N: PM1830
56
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-30. Single Block Lock/Unlock Protection (SBLK/SBULK)
These instructions are only effective after WPSEL was executed. The SBLK instruction is for write protection a
specified block(or sector) of memory, using A23-A16 or (A23-A12) address bits to assign a 64Kbytes block (or
4K bytes sector) to be protected as read only. The SBULK instruction will cancel the block (or sector) write protection state. This feature allows user to stop protecting the entire block (or sector) through the chip unprotect
command (GBULK).
The WREN (Write Enable) instruction is required before issuing SBLK/SBULK instruction.
The sequence of issuing SBLK/SBULK instruction is: CS# goes low → send SBLK/SBULK (36h/39h) instruction
→ send 3 address bytes assign one block (or sector) to be protected on SI pin → CS# goes high.
The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not be executed.
The SIO[3:1] are don't care when during this mode.
Figure 36. Single Block Lock/Unlock Protection (SBLK/SBULK) Sequence (Command 36/39)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
24 Bit Address
Cycles
Command
SI
36/39
A23 A22
A2 A1 A0
MSB
P/N: PM1830
57
REV. 1.2, NOV. 07, 2013
MX25L3275E
SBLK/SBULK instruction function flow is as follows:
Figure 37. Block Lock Flow
Start
RDSCUR(2Bh) command
WPSEL=1?
No
WPSEL command
Yes
WREN command
SBLK command
( 36h + 24bit address )
RDSR command
WIP=0?
No
Yes
RDBLOCK command
( 3Ch + 24bit address )
Data = FFh ?
No
Yes
Block lock successfully
Lock another block?
Block lock fail
Yes
No
Block lock completed
P/N: PM1830
58
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 38. Block Unlock Flow
start
RDSCUR(2Bh) command
WPSEL=1?
No
WPSEL command
Yes
WREN command
SBULK command
( 39h + 24bit address )
RDSR command
No
WIP=0?
Yes
Unlock another block?
Yes
Unlock block completed
P/N: PM1830
59
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-31. Read Block Lock Status (RDBLOCK)
This instruction is only effective after WPSEL was executed. The RDBLOCK instruction is for reading the status
of protection lock of a specified block(or sector), using A23-A16 (or A23-A12) address bits to assign a 64K bytes
block (4K bytes sector) and read protection lock status bit which the first byte of Read-out cycle. The status bit
is"1" to indicate that this block has been protected, that user can read only but cannot write/program /erase this
block. The status bit is "0" to indicate that this block hasn't be protected, and user can read and write this block.
The sequence of issuing RDBLOCK instruction is: CS# goes low → send RDBLOCK (3Ch) instruction → send
3 address bytes to assign one block on SI pin → read block's protection lock status bit on SO pin → CS# goes
high.
The SIO[3:1] are don't care when during this mode.
Figure 39. Read Block Protection Lock Status (RDBLOCK) Sequence (Command 3C)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI
3C
24 ADD Cycles
A23 A22 A21
A3 A2 A1 A0
MSB
SO
Block Protection Lock status out
High-Z
D7 D6 D5 D4 D3 D2 D1 D0
MSB
P/N: PM1830
60
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-32. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is for enable/
disable the lock protection block of the whole chip.
The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction → CS# goes high.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
The SIO[3:1] are don't care when during this mode.
Figure 40. Gang Block Lock/Unlock (GBLK/GBULK) Sequence (Command 7E/98)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
P/N: PM1830
7E/98
61
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-33. Enable SO to Output RY/BY# (ESRY)
The ESRY instruction is for outputting the ready/busy status to SO during CP mode.
The sequence of issuing ESRY instruction is: CS# goes low → sending ESRY instruction code → CS# goes
high.
The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
10-34. Disable SO to Output RY/BY# (DSRY)
The DSRY instruction is for resetting ESRY during CP mode. The ready/busy status will not output to SO after
DSRY issued.
The sequence of issuing DSRY instruction is: CS# goes low → send DSRY instruction code → CS# goes high.
The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
10-35. No Operation (NOP)
The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect
any other command.
The SIO[3:1] are don't care when during this mode.
10-36. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST)
command. It returns the device to standby mode.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable
will be invalid.
The SIO[3:1] are don't care when during this mode.
If the Reset command is executed during program or erase operation, the operation will be disabled, the data
under processing could be damaged or lost.
The reset time is different depending on the last operation. Longer latency time is required to recover from a
program operation than from other operations.
Figure 41. Software Reset Recovery
Stand-by Mode
CS#
66
99
tRCR
tRCP
tRCE
Mode
tRCR: 200ns (Recovery Time from Read)
tRCP: 20us (Recovery Time from Program)
tRCE: 12ms (Recovery Time from Erase)
P/N: PM1830
62
REV. 1.2, NOV. 07, 2013
MX25L3275E
10-37. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the
functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These
parameter tables can be interrogated by host system software to enable adjustments needed to accommodate
divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC
Standard, JESD68 on CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3
address bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation
can use CS# to high at any time during data out.
SFDP is a JEDEC Standard, JESD216.
Figure 42. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
5Ah
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
P/N: PM1830
5
4
3
2
1
0
7
MSB
MSB
63
6
5
4
3
2
1
0
7
MSB
REV. 1.2, NOV. 07, 2013
MX25L3275E
Table 9. Signature and Parameter Identification Data Values
Description
SFDP Signature
Comment
Fixed: 50444653h
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
00h
07:00
53h
Data
(h)
53h
01h
15:08
46h
46h
02h
23:16
44h
44h
03h
31:24
50h
50h
SFDP Minor Revision Number
Start from 00h
04h
07:00
00h
00h
SFDP Major Revision Number
Start from 01h
This number is 0-based. Therefore,
0 indicates 1 parameter header.
05h
15:08
01h
01h
06h
23:16
01h
01h
07h
31:24
FFh
FFh
00h: it indicates a JEDEC specified
header.
08h
07:00
00h
00h
Start from 00h
09h
15:08
00h
00h
Start from 01h
0Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
0Bh
31:24
09h
09h
0Ch
07:00
30h
30h
0Dh
15:08
00h
00h
0Eh
23:16
00h
00h
0Fh
31:24
FFh
FFh
it indicates Macronix manufacturer
ID
10h
07:00
C2h
C2h
Start from 00h
11h
15:08
00h
00h
Start from 01h
12h
23:16
01h
01h
How many DWORDs in the
Parameter table
13h
31:24
04h
04h
14h
07:00
60h
60h
15h
15:08
00h
00h
16h
23:16
00h
00h
17h
31:24
FFh
FFh
Number of Parameter Headers
Unused
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of JEDEC Flash
Parameter table
Unused
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of Macronix Flash
Parameter table
Unused
P/N: PM1830
64
REV. 1.2, NOV. 07, 2013
MX25L3275E
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables
Description
Comment
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction Required 0: not required
for Writing to Volatile Status
1: required 00h to be written to the
Registers
status register
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
31h
(1-1-2) Fast Read (Note2)
0=not support 1=support
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
Clocking
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
01b
02
1b
03
0b
30h
0: use 50h opcode,
1: use 06h opcode
Write Enable Opcode Select for
Note: If target flash status register
Writing to Volatile Status Registers
is nonvolatile, then bits 3 and 4
must be set to 00b.
Contains 111b and can never be
Unused
changed
4KB Erase Opcode
01:00
0=not support 1=support
32h
Data
(h)
E5h
04
0b
07:05
111b
15:08
20h
16
1b
18:17
00b
19
0b
20
1b
20h
F1h
(1-2-2) Fast Read
0=not support 1=support
(1-4-4) Fast Read
0=not support 1=support
21
1b
(1-1-4) Fast Read
0=not support 1=support
22
1b
23
1b
33h
31:24
FFh
37h:34h
31:00
01FFFFFFh
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states (Note3)
Clocks) not support
(1-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits (Note4)
38h
(1-4-4) Fast Read Opcode
39h
(1-1-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Ah
(1-1-4) Fast Read Opcode
3Bh
P/N: PM1830
65
04:00
0 0100b
07:05
010b
15:08
EBh
20:16
0 1000b
23:21
000b
31:24
6Bh
FFh
44h
EBh
08h
6Bh
REV. 1.2, NOV. 07, 2013
MX25L3275E
Description
Comment
(1-1-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
3Ch
(1-1-2) Fast Read Opcode
3Dh
(1-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Eh
(1-2-2) Fast Read Opcode
3Fh
(2-2-2) Fast Read
0=not support 1=support
Unused
(4-4-4) Fast Read
0=not support 1=support
40h
Unused
04:00
0 1000b
07:05
000b
15:08
3Bh
20:16
0 0100b
23:21
000b
31:24
BBh
00
0b
03:01
111b
04
0b
07:05
111b
Data
(h)
08h
3Bh
04h
BBh
EEh
Unused
43h:41h
31:08
FFh
FFh
Unused
45h:44h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
(2-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(2-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
46h
(2-2-2) Fast Read Opcode
47h
31:24
FFh
FFh
49h:48h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
Unused
00h
(4-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(4-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
4Ah
(4-4-4) Fast Read Opcode
4Bh
31:24
FFh
FFh
4Ch
07:00
0Ch
0Ch
4Dh
15:08
20h
20h
4Eh
23:16
0Fh
0Fh
4Fh
31:24
52h
52h
50h
07:00
10h
10h
51h
15:08
D8h
D8h
52h
23:16
00h
00h
53h
31:24
FFh
FFh
Sector Type 1 Size
Sector/block size = 2^N bytes (Note5)
0x00b: this sector type doesn't exist
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 3 erase Opcode
Sector Type 4 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 4 erase Opcode
P/N: PM1830
66
00h
REV. 1.2, NOV. 07, 2013
MX25L3275E
Table 11. Parameter Table (1): Macronix Flash Parameter Tables
Description
Comment
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
Data
(h)
Vcc Supply Maximum Voltage
2000h=2.000V
2700h=2.700V
3600h=3.600V
61h:60h
07:00
15:08
00h
36h
00h
36h
Vcc Supply Minimum Voltage
1650h=1.650V
2250h=2.250V
2350h=2.350V
2700h=2.700V
63h:62h
23:16
31:24
00h
27h
00h
27h
H/W Reset# pin
0=not support 1=support
00
0b
H/W Hold# pin
0=not support 1=support
01
1b
Deep Power Down Mode
0=not support 1=support
02
1b
S/W Reset
0=not support 1=support
03
1b
S/W Reset Opcode
Reset Enable (66h) should be
issued before Reset Opcode
Program Suspend/Resume
0=not support 1=support
12
0b
Erase Suspend/Resume
0=not support 1=support
13
0b
14
1b
15
0b
66h
23:16
FFh
FFh
67h
31:24
FFh
FFh
65h:64h
Unused
Wrap-Around Read mode
0=not support 1=support
Wrap-Around Read mode Opcode
11:04
1001 1001b 499Eh
(99h)
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
Individual block lock
0=not support 1=support
00
1b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
01
0b
09:02
0011 0110b
(36h)
10
0b
11
1b
Individual block lock Opcode
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
Secured OTP
0=not support 1=support
Read Lock
0=not support 1=support
12
0b
Permanent Lock
0=not support 1=support
13
0b
Unused
15:14
11b
Unused
31:16
FFh
FFh
31:00
FFh
FFh
Unused
P/N: PM1830
6Bh:68h
6Fh:6Ch
67
C8D9h
REV. 1.2, NOV. 07, 2013
MX25L3275E
Note 1:h/b is hexadecimal or binary.
Note 2:(x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1),
(2-2-2), and (4-4-4)
Note 3:Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4:Mode Bits is optional control bits that follow the address bits. These bits are driven by the system
controller if they are specified. (eg,read performance enhance toggling bits)
Note 5:4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6:All unused and undefined area data is blank FFh.
P/N: PM1830
68
REV. 1.2, NOV. 07, 2013
MX25L3275E
11. POWER-ON STATE
The device is at below states when power-up:
- Standby mode (please note it is not Deep Power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal Power-on Reset (POR) circuit may protect the device from data corruption and inadvertent data
change during power up state.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is
not guaranteed. The read, write, erase, and program command should be sent after the time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF)
P/N: PM1830
69
REV. 1.2, NOV. 07, 2013
MX25L3275E
12. ELECTRICAL SPECIFICATIONS
12-1.
ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
Industrial grade
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to 4.0V
NOTICE:
1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability.
2.Specifications contained within the following tables are subject to change.
3.During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see
the figures below.
Figure 43. Maximum Negative Overshoot Waveform
Figure 44. Maximum Positive Overshoot Waveform
20ns
20ns
20ns
Vcc + 2.0V
Vss
Vcc
Vss-2.0V
20ns
12-2.
20ns
20ns
CAPACITANCE
TA = 25°C, f = 1.0 MHz
SYMBOL PARAMETER
CIN
COUT
P/N: PM1830
MIN.
TYP.
MAX.
UNIT
Input Capacitance
6
pF
VIN = 0V
Output Capacitance
8
pF
VOUT = 0V
70
CONDITIONS
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 45. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing reference level
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Output timing reference level
AC
Measurement
Level
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 46. OUTPUT LOADING
DEVICE UNDER
TEST
2.7K ohm
CL
6.2K ohm
+3.3V
DIODES=IN3064
OR EQUIVALENT
CL=30/15pF Including jig capacitance
P/N: PM1830
71
REV. 1.2, NOV. 07, 2013
MX25L3275E
Table 12. DC CHARACTERISTICS
Temperature = -40°C to 85°C for Industrial grade
Symbol Parameter
Notes
Min.
Typ.
Max.
ILI
Input Load Current
1
±2
ILO
Output Leakage Current
1
±2
ISB1
VCC Standby Current
1
ISB2
Deep Power-down
Current
ICC1
VCC Read
VIL
VCC Program Current
(PP)
VCC Write Status
Register (WRSR)
Current
VCC Sector Erase
Current (SE)
VCC Chip Erase
Current (CE)
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
ICC2
ICC3
ICC4
ICC5
Units Test Conditions
VCC = VCC Max,
uA
VIN = VCC or GND
VCC = VCC Max,
uA
VOUT = VCC or GND
uA VIN = VCC or GND, CS# = VCC
15
50
1
25
uA
35
mA
19
mA
25
mA
fQ=86MHz (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
20
mA
fT=86MHz (2 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
10
mA
f=33MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
15
25
mA
Program in Progress, CS# =
VCC
15
20
mA
Program status register in
progress, CS#=VCC
1
10
25
mA
Erase in Progress, CS#=VCC
1
15
25
mA
Erase in Progress, CS#=VCC
-0.5
0.8
V
0.7VCC
VCC+0.4
V
0.4
V
IOL = 1.6mA
V
IOH = -100uA
1
1
VCC-0.2
VIN = VCC or GND, CS# = VCC
f=104MHz (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
f=104MHz (1 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
Notes :
1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and
speeds).
2.Typical value is calculated by simulation.
3.The value guaranteed by characterization, not 100% tested in production.
P/N: PM1830
72
REV. 1.2, NOV. 07, 2013
MX25L3275E
Table 13. AC CHARACTERISTICS
Temperature = -40°C to 85°C for Industrial grade
Symbol
Alt. Parameter
fSCLK
fC
fRSCLK
fR
fT
fQ
fTSCLK
tCH(1)
tCLH
tCL(1)
tCLL
tCLCH
tCHCL
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tCSS
tDSU
tDH
tSHSL(3) tCSH
tSHQZ
tDIS
tHLCH
tCHHH
tHHCH
tCHHL
tHHQX
tLZ
tHLQZ
tHZ
tCLQV
tCLQX
tWHSL
tSHWL
tDP
tRES1
tRES2
P/N: PM1830
Min.
Clock Frequency for the following instructions:
FAST_READ, RDSFDP, PP, SE, BE, CE, DP, RES, RDP,
WREN, WRDI, RDID, RDSR, WRSR
Clock Frequency for READ instructions
Clock Frequency for 2READ/DREAD instructions
Clock Frequency for 4READ/QREAD instructions (4)
Others (fSCLK)
Clock High Time
Normal Read (fRSCLK)
Others (fSCLK)
Clock Low Time
Normal Read (fRSCLK)
Clock Rise Time (3) (peak to peak)
Clock Fall Time (3) (peak to peak)
CS# Active Setup Time (relative to SCLK)
CS# Not Active Hold Time (relative to SCLK)
Data In Setup Time
Data In Hold Time
CS# Active Hold Time (relative to SCLK)
CS# Not Active Setup Time (relative to SCLK)
Read
CS# Deselect Time
Write/Erase/Program
2.7V-3.6V
Output Disable Time
3.0V-3.6V
HOLD# Active Setup Time (relative to SCLK)
HOLD# Active Hold Time (relative to SCLK)
HOLD# Not Active Setup Time (relative to SCLK)
HOLD# Not Active Hold Time (relative to SCLK)
2.7V-3.6V
HOLD# to Output Low-Z
Loading=30pF
3.0V-3.6V
2.7V-3.6V
HOLD# to Output High-Z
Loading=30pF
3.0V-3.6V
Loading: 1 I/O
10pF
2 I/O & 4 I/O
Clock Low to Output Valid Loading: 1 I/O
tV
VCC=2.7V~3.6V
15pF
2 I/O & 4 I/O
Loading: 1 I/O
30pF
2 I/O & 4 I/O
tHO Output Hold Time
Write Protect Setup Time
Write Protect Hold Time
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic Signature
Read
CS# High to Standby Mode with Electronic Signature Read
73
D.C.
4.5
9
4.5
9
0.1
0.1
4
4
2
3
4
4
15
50
5
5
5
5
1
20
100
Typ.
Max.
Unit
104
MHz
50
86
86
10
8
10
8
5
MHz
MHz
MHz
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6
ns
6
6
7
8
10
ns
ns
ns
ns
ns
ns
ns
us
100
us
100
us
10
8
REV. 1.2, NOV. 07, 2013
MX25L3275E
Symbol
tW
tBP
tPP
tSE
tBE
tBE
tCE
tWPS
tWSR
Alt. Parameter
Write Status Register Cycle Time
Byte-Program
Page Program Cycle Time
Sector Erase Cycle Time (4KB)
Block Erase Cycle Time (32KB)
Block Erase Cycle Time (64KB)
Chip Erase Cycle Time
Write Protection Selection Time
Write Security Register Time
Min.
Typ.
12
0.7
30
0.14
0.25
10
Max.
40
50
3
200
1.6
2
50
1
1
Unit
ms
us
ms
ms
s
s
s
ms
ms
Notes:
1. tCH + tCL must be greater than or equal to 1/ fC.
2. The value guaranteed by characterization, not 100% tested in production.
3.Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. For 4READ instruction, when dummy cycle=6, clock rate is 86MHz (default), and when dummy cycle=8, clock
rate is 104MHz.
P/N: PM1830
74
REV. 1.2, NOV. 07, 2013
MX25L3275E
13. TIMING ANALYSIS
Figure 47. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
LSB
MSB
SI
High-Z
SO
Figure 48. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQX
tCL
tCLQV
tCLQX
LSB
SO
SI
P/N: PM1830
tSHQZ
ADDR.LSB IN
75
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 49. Hold Timing
CS#
tHLCH
tCHHL
tHHCH
SCLK
tCHHH
tHLQZ
tHHQX
SO
HOLD#
Figure 50. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCLK
01
SI
SO
P/N: PM1830
High-Z
76
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 51. Power-Up Timing
VCC
VCC(max)
Chip Selection is Not Allowed
VCC(min)
tVSL
Device is fully accessible
time
Note: VCC (max.) is 3.6V and VCC (min.) is 2.7V.
Table 14. Power-Up Timing
Symbol
tVSL(1)
Parameter
VCC(min) to CS# low
Min.
300
Max.
Unit
us
Note: The parameter is characterized only.
13-1.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM1830
77
REV. 1.2, NOV. 07, 2013
MX25L3275E
14. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in "Figure 52. AC Timing at Device Power-Up" and "Figure 53. Power-Down Sequence" are
for the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is
ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 52. AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tSLCH
tCHSL
tSHCH
tCHSH
SCLK
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
SI
High Impedance
SO
Symbol
tVR
tCLCH
Parameter
VCC Rise Time
Notes
1
Min.
20
Max.
500000
Unit
us/V
Notes :
1.Sampled, not 100% tested.
2.For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer
to "Table 13. AC CHARACTERISTICS".
P/N: PM1830
78
REV. 1.2, NOV. 07, 2013
MX25L3275E
Figure 53. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
P/N: PM1830
79
REV. 1.2, NOV. 07, 2013
MX25L3275E
15. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Write Status Register Cycle Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Typ. (1)
30
0.14
0.25
10
12
0.7
100,000
Chip Erase Time
Byte Program Time (via page program command)
Page Program Time
Erase/Program Cycle
Max. (2)
40
200
1.6
2
50
50
3
Unit
ms
ms
s
s
s
us
ms
cycles
Notes:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checker board pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command.
16. DATA RETENTION
Parameter
Condition
Min.
Data retention
55˚C
20
Max.
Unit
years
LATCH-UP CHARACTERISTICS
17.
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N: PM1830
80
Min.
-1.0V
-1.0V
-100mA
Max.
2 VCCmax
VCC + 1.0V
+100mA
REV. 1.2, NOV. 07, 2013
MX25L3275E
18. ORDERING INFORMATION
CLOCK
(MHz)
TEMPERATURE
MX25L3275EMI-10G *
104
-40°C~85°C
MX25L3275EM2I-10G
104
-40°C~85°C
MX25L3275EZNI-10G *
104
-40°C~85°C
PART NO.
PACKAGE
Remark
16-SOP
(300mil)
8-SOP
(200mil)
8-WSON
(6x5mm)
* Advanced Information.
P/N: PM1830
81
REV. 1.2, NOV. 07, 2013
MX25L3275E
19. PART NAME DESCRIPTION
MX 25
L 3275E
M2
I
10 G
OPTION:
G: RoHS Compliant and Halogen-free
SPEED:
10: 104MHz
TEMPERATURE RANGE:
I: Industrial (-40° C to 85° C)
PACKAGE:
M: 300mil 16-SOP
M2: 200mil 8-SOP
ZN: 6x5mm 8-WSON
DENSITY & MODE:
3275E: 32Mb standard type
TYPE:
L: 3V
DEVICE:
25: Serial Flash
P/N: PM1830
82
REV. 1.2, NOV. 07, 2013
MX25L3275E
20. PACKAGE INFORMATION
P/N: PM1830
83
REV. 1.2, NOV. 07, 2013
MX25L3275E
P/N: PM1830
84
REV. 1.2, NOV. 07, 2013
MX25L3275E
P/N: PM1830
85
REV. 1.2, NOV. 07, 2013
MX25L3275E
21. REVISION HISTORY
Revision No. Description
1.0
1. Removed "Advanced Information"
2. Modified SFDP wording
1.1
1. Updated tSLCH, tCHSL, tCHSH, tSHCH value in AC Characteristics Table
1.2
1. Updated parameters for DC/AC Characteristics 2. Updated Erase and Programming Performance 3. Modified Absolute Maximum Ratings & Capacitance table P/N: PM1830
86
Page
P4
P63~68
P73
Date
JUN/19/2012
P4,72,74 P4,80
P70
NOV/07/2013
SEP/24/2012
REV. 1.2, NOV. 07, 2013
MX25L3275E
Except for customized products which have been expressly identified in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
personal injury, or severe property damages. In the event Macronix products are used in contradicted to their
target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its
actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or
distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2012. All rights reserved, including the trademarks and tradename
thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit,
Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names
and brands of third party referred thereto (if any) are for identification purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
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