MX30LFxGE8AB

MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
1G/2G/4G-bit NAND Flash Memory
(ECC-Free)
MX30LFxGE8AB
P/N: PM1975
REV. 1.1, MAY 04, 2015
1
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Contents
1.FEATURES........................................................................................................................................6
2. GENERAL DESCRIPTIONS..............................................................................................................7
Figure 1. Logic Diagram.......................................................................................................................... 7
2-1. ORDERING INFORMATION....................................................................................................8
3. PIN CONFIGURATIONS....................................................................................................................9
3-1. PIN DESCRIPTIONS..............................................................................................................11
4. BLOCK DIAGRAM...........................................................................................................................13
5. SCHEMATIC CELL LAYOUT AND ADDRESS ASSIGNMENT.......................................................14
Table 1. Address Allocation: MX30LFxGE8AB...................................................................................... 14
6. DEVICE OPERATIONS....................................................................................................................15
6-1. Address Input/Command Input/Data Input.........................................................................15
Figure 2. AC Waveforms for Command / Address / Data Latch Timing................................................ 15
Figure 3. AC Waveforms for Address Input Cycle................................................................................. 15
Figure 4. AC Waveforms for Command Input Cycle............................................................................. 16
Figure 5. AC Waveforms for Data Input Cycle...................................................................................... 16
6-2. Page Read.............................................................................................................................17
Figure 6. AC Waveforms for Read Cycle.............................................................................................. 17
Figure 7. AC Waveforms for Read Operation (Intercepted by CE#)..................................................... 18
Figure 8. AC Waveforms for Read Operation (with CE# Don't Care).................................................... 19
Figure 9-1. AC Waveforms for Sequential Data Out Cycle (After Read)............................................... 19
Figure 9-2. AC Waveforms for Sequential Data Out Cycle (After Read) - EDO Mode.......................... 20
Figure 10. AC Waveforms for Random Data Output............................................................................. 21
6-3. Page Program.......................................................................................................................22
Figure 11. AC Waveforms for Program Operation after Command 80H............................................... 22
Figure 12. AC Waveforms for Random Data In (For Page Program).................................................... 23
Figure 13. AC Waveforms for Program Operation with CE# Don't Care............................................... 24
6-4. Cache Program.....................................................................................................................25
Figure 14-1. AC Waveforms for Cache Program ................................................................................. 26
Figure 14-2. AC Waveforms for Sequence of Cache Program ............................................................ 27
6-5. Block Erase...........................................................................................................................28
Figure 15. AC Waveforms for Erase Operation..................................................................................... 28
P/N: PM1975
REV. 1.1, MAY 04, 2015
2
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-6. ID Read..................................................................................................................................29
Table 2. ID Codes Read Out by ID Read Command 90H..................................................................... 29
Table 3. The Definition of Byte2~Byte4 of ID Table............................................................................... 30
Figure 16-1. AC Waveforms for ID Read Operation.............................................................................. 31
Figure 16-2. AC Waveforms for ID Read (ONFI Identifier) Operation................................................... 31
6-7. Status Read...........................................................................................................................32
Table 4-1. Status Output....................................................................................................................... 32
Table 4-2. ECC Bits Status.................................................................................................................... 32
Figure 17. Bit Assignment (HEX Data).................................................................................................. 33
Figure 18. AC Waveforms for Status Read Operation.......................................................................... 33
6-8. Status Enhance Read...........................................................................................................34
Figure 19. AC Waveforms for Status Enhance Operation..................................................................... 34
6-9.Reset......................................................................................................................................35
Figure 20. AC waveforms for Reset Operation..................................................................................... 35
6-10. Parameter Page Read (ONFI)...............................................................................................36
Figure 21. AC waveforms for Parameter Page Read (ONFI) Operation .............................................. 36
Figure 22. AC Waveforms for Parameter Page Read (ONFI) Random Operation (For 05h-E0h)........ 37
Table 5. Parameter Page (ONFI).......................................................................................................... 38
6-11. Unique ID Read (ONFI).........................................................................................................40
Figure 23. AC waveforms for Unique ID Read Operation..................................................................... 41
Figure 24. AC waveforms for Unique ID Read Operation (For 05h-E0h).............................................. 42
6-12. Feature Set Operation (ONFI)..............................................................................................43
Table 6-1. Definition of Feature Address............................................................................................... 43
Table 6-2. Sub-Feature Parameter Table of Feature Address - 90h (Array Operation Mode).............. 43
6-12-1. Set Feature (ONFI).................................................................................................................. 44
Figure 25. AC Waveforms for Set Feature (ONFI) Operation .............................................................. 44
6-12-2. Get Feature (ONFI).................................................................................................................. 45
Figure 26. AC Waveforms for Get Feature (ONFI) Operation............................................................... 45
6-12-3. Secure OTP (One-Time-Programmable) Feature................................................................. 46
Figure 27. AC Waveforms for OTP Data Read..................................................................................... 46
Figure 28. AC Waveforms for OTP Data Read with Random Data Output........................................... 47
Figure 29. AC Waveforms for OTP Data Program................................................................................ 48
Figure 30. AC Waveforms for OTP Data Program with Random Data Input......................................... 49
Figure 31. AC Waveforms for OTP Protection Operation ..................................................................... 50
6-12-4. Internal ECC Always Enabled................................................................................................ 51
Table 7-1 For 4Gb, the Distribution of ECC Segment and Spare Area in a Page................................. 51
Table 7-2 For 1Gb/2Gb, the Distribution of ECC Segment and Spare Area in a Page......................... 51
P/N: PM1975
REV. 1.1, MAY 04, 2015
3
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-13. Two-Plane Operations..........................................................................................................52
6-14. Two-plane Program (ONFI) and Two-plane Cache Program (ONFI).................................52
Figure 32-1. AC Waveforms for Two-plane Program (ONFI)................................................................ 53
Figure 32-2. AC Waveforms for Page Program Random Data Two-plane (ONFI)................................ 54
Figure 33. AC Waveforms for Two-plane Cache Program (ONFI)........................................................ 55
Figure 34. AC Waveforms for Two-plane Erase (ONFI)........................................................................ 56
6-15. Two-plane Block Erase (ONFI).............................................................................................56
7.PARAMETERS.................................................................................................................................57
7-1. ABSOLUTE MAXIMUM RATINGS........................................................................................57
Table 8. Operating Range..................................................................................................................... 58
Table 9. DC Characteristics................................................................................................................... 58
Table 10. Capacitance........................................................................................................................... 59
Table 11. AC Testing Conditions............................................................................................................ 59
Table 12. Program and Erase Characteristics ...................................................................................... 59
Table 13. AC Characteristics................................................................................................................. 60
8. OPERATION MODES: LOGIC AND COMMAND TABLES.............................................................61
Table 14. Logic Table............................................................................................................................ 61
Table 15-1. HEX Command Table......................................................................................................... 62
Table 15-2. Two-plane Command Set (For 2Gb/4Gb).......................................................................... 62
8-1. R/B#: Termination for The Ready/Busy# Pin (R/B#).........................................................63
Figure 35. R/B# Pin Timing Information ............................................................................................... 64
8-2. Power On/Off Sequence.......................................................................................................65
Figure 36. Power On/Off Sequence ..................................................................................................... 65
8-2-1. WP# Signal .............................................................................................................................. 66
Figure 37-1. Enable Programming of WP# Signal................................................................................ 66
Figure 37-2. Disable Programming of WP# Signal................................................................................... 66
Figure 37-3. Enable Erasing of WP# Signal.......................................................................................... 66
Figure 37-4. Disable Erasing of WP# Signal......................................................................................... 66
9. SOFTWARE ALGORITHM...............................................................................................................67
9-1. Invalid Blocks (Bad Blocks) ................................................................................................67
Figure 38. Bad Blocks........................................................................................................................... 67
Table 16. Valid Blocks........................................................................................................................... 67
9-2. Bad Block Test Flow.............................................................................................................68
Figure 39. Bad Block Test Flow............................................................................................................. 68
9-3. Failure Phenomena for Read/Program/Erase Operations................................................69
Table 17. Failure Modes........................................................................................................................ 69
P/N: PM1975
REV. 1.1, MAY 04, 2015
4
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
9-4.Program.................................................................................................................................70
Figure 40. Failure Modes...................................................................................................................... 70
Figure 41. Program Flow Chart............................................................................................................. 70
9-5.Erase......................................................................................................................................70
Figure 42. Erase Flow Chart................................................................................................................. 71
Figure 43. Read Flow Chart.................................................................................................................. 71
10.PACKAGE INFORMATION..............................................................................................................72
11.REVISION HISTORY .......................................................................................................................74
P/N: PM1975
REV. 1.1, MAY 04, 2015
5
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
1G/2G/4G-bit NAND Flash Memory
1. FEATURES
•
• Hardware Data Protection: WP# pin
1G-bit/2G-bit/4G-bit SLC NAND Flash
- Bus: x8
• Device Status Indicators
- Page size: (2048+64)byte
- Ready/Busy (R/B#) pin
- Block size: (128K+4K)byte
- Status Register
- Plane size:
• Chip Enable Don't Care
1024-block/plane x 1 for 1Gb
- Simplify System Interface
1024-block/plane x 2 for 2Gb
• Unique ID Read support (ONFI)
2048-block/plane x 2 for 4Gb
• Secure OTP support
• ONFI 1.0 compliant
• Electronic Signature
• Multiplexed Command/Address/Data
• High Reliability
• User Redundancy
- Internal ECC logic always enabling
- 64-byte attached to each page
- Typical 100K P/E endurance cycle
• Fast Read Access
- Data Retention: 10 years
- Latency of array to register: 45us (typ.)
• Wide Temperature Operating Range
- Sequential read: 20ns
-40°C to +85°C
• Page Program Operation
• Package:
- Page program time: 320us (typ.)
- 48-TSOP(I) (12mm x 20mm)
• Cache Program Support
- 63-ball 9mmx11mm VFBGA (For 1Gb)
• Block Erase Operation
All packaged devices are RoHS Compliant
- Block erase time: 1ms (typ.)
and Halogen-free.
• Single Voltage Operation:
- VCC: 2.7 ~ 3.6V
• Low Power Dissipation
- Max. 30mA
Active current (Read/Program/Erase)
• Sleep Mode
- 50uA (Max.) standby current
P/N: PM1975
REV. 1.1, MAY 04, 2015
6
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
2. GENERAL DESCRIPTIONS
The MX30LFxGE8AB is a 1Gb to 4Gb SLC NAND Flash memory device. Its standard NAND Flash features
and reliable quality make it most suitable for embedded system code and data storage.
The product family does not require the host controller to support ECC since there is an internal ECC logic
inside the Flash device for the error correction and detection.
The MX30LFxGE8AB is typically accessed in pages of 2,112 bytes both for read and for program operations.
The MX30LFxGE8AB array is organized as thousands of blocks, which is composed by 64 pages of (2,048+64)
bytes in two NAND strings structure with 32 serial connected cells in each string. Each page has an additional 64 bytes for bad block marks and other purposes. The device has an on-chip buffer of 2,112 bytes for data
load and access.
The MX30LFxGE8AB power consumption is 30mA during all modes of operations (Read/Program/Erase),
and 50uA in standby mode.
Figure 1. Logic Diagram
ALE
CLE
CE#
RE#
WE#
IO7~IO0
1Gb,
2Gb, or
4Gb
ECC
Logic
R/B#
WP#
P/N: PM1975
REV. 1.1, MAY 04, 2015
7
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
2-1. ORDERING INFORMATION
Part Name Description
MX 30 L F 1G E8A B - T
I
xx
RESERVE
OPERATING TEMPERATURE:
I: Industrial (-40°C to 85°C)
PACKAGE TYPE:
T: 48TSOP
XK: 0.8mm Ball Pitch, 0.45mm Ball Size
and 1.0mm height of VFBGA
Package: RoHS Compliant & Halogen-free
GENERATION (Tech. Code)
B
OPTION CODE:
E8A = Internal ECC always enabled, x8, mode A
(Mode A: number of die=1, number of CE#=1, number of R/B#=1)
DENSITY:
1G= 1G-bit
2G= 2G-bit
4G= 4G-bit
CLASSIFICATION:
F = SLC + Large Block
VOLTAGE:
L = 2.7V to 3.6V
TYPE:
30 = NAND Flash
BRAND:
MX
Part Number
Density
Organization
VCC Range
Package
Temperature Grade
MX30LF1GE8AB-TI
1Gb
x8
3V
48-TSOP
Industrial
MX30LF1GE8AB-XKI
1Gb
x8
3V
63-VFBGA
Industrial
MX30LF2GE8AB-TI
2Gb
x8
3V
48-TSOP
Industrial
MX30LF4GE8AB-TI
4Gb
x8
3V
48-TSOP
Industrial
P/N: PM1975
REV. 1.1, MAY 04, 2015
8
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
3. PIN CONFIGURATIONS
48-TSOP
NC
NC
NC
NC
NC
NC
R/B#
RE#
CE#
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE#
WP#
NC
NC
NC
NC
NC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
VSS1
NC
NC
NC
IO7
IO6
IO5
IO4
NC
VCC1
DNU
VCC
VSS
NC
VCC1
NC
IO3
IO2
IO1
IO0
NC
NC
NC
VSS1
Note 1: These pins might not be connected internally. However, it is recommended to connect these pins to power (or ground) as designated for ONFI compatibility.
P/N: PM1975
REV. 1.1, MAY 04, 2015
9
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
63-ball 9mmx11mm VFBGA
1
2
A
NC
NC
B
NC
3
4
5
6
8
7
C
WP#
ALE
Vss
CE#
WE#
R/B#
D
Vcc
1
RE#
CLE
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
Vss
1
NC
G
NC
Vcc
DNU
NC
NC
NC
H
NC
I/O0
NC
NC
NC
Vcc
J
NC
IO1
NC
Vcc
IO5
IO7
K
Vss
IO2
IO3
IO4
I/O6
Vss
1
9
10
NC
NC
NC
NC
L
NC
NC
NC
NC
M
NC
NC
NC
NC
Note 1. These pins might not be connected internally; however, it is recommended to connect these pins to power (or ground) as designated for ONFI compatibility.
P/N: PM1975
REV. 1.1, MAY 04, 2015
10
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
3-1. PIN DESCRIPTIONS
SYMBOL
IO7 - IO0
PIN NAME
Data I/O port: IO7-IO0
CE#
Chip Enable (Active Low)
RE#
Read Enable (Active Low)
WE#
Write Enable (Active Low)
CLE
Command Latch Enable
ALE
Address Latch Enable
WP#
Write Protect (Active Low)
R/B#
Ready/Busy (Open Drain)
VSS
Ground
VCC
Power Supply for Device Operation
NC
DNU
Not Connected Internally
Do Not Use (Do Not Connect)
P/N: PM1975
REV. 1.1, MAY 04, 2015
11
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
PIN FUNCTIONS
ADDRESS LATCH ENABLE: ALE
The MX30LFxGE8AB device is a sequential
access memory that utilizes multiplexing input of
Command/Address/Data.
The ALE controls the address input. When the ALE
goes high, the address is latched at the rising edge
of WE#.
I/O PORT: IO7- IO0
WRITE PROTECT: WP#
The IO7 to IO0 pins are for address/command
input and data output to and from the device.
The WP# signal keeps low and then the memory will
not accept the program/erase operation. It is recommended to keep WP# pin low during power on/off
sequence. Please refer to the waveform of "Power
On/Off Sequence".
CHIP ENABLE: CE#
The device goes into low-power Standby Mode
when CE# goes high during a read operation and
not at busy stage.
READY/Busy: R/B#
The CE# goes low to enable the device to be
ready for standard operation. When the CE# goes
high, the device is deselected. However, when the
device is at busy stage, the device will not go to
standby mode when CE# pin goes high.
The R/B# is an open-drain output pin. The R/B#
outputs the ready/busy status of read/program/
erase operation of the device. When the R/B# is at
low, the device is busy for read or program or erase
operation. When the R/B# is at high, the read/
program/erase operation is finished.
READ ENABLE: RE#
Please refer to Section 8-1 for details.
The RE# (Read Enable) allows the data to be
output by a tREA time after the falling edge of
RE#. The internal address counter is automatically
increased by one at the falling edge of RE#.
WRITE ENABLE: WE#
When the WE# goes low, the address/data/
command are latched at the rising edge of WE#.
COMMAND LATCH ENABLE: CLE
The CLE controls the command input. When the
CLE goes high, the command data is latched at
the rising edge of the WE#.
P/N: PM1975
REV. 1.1, MAY 04, 2015
12
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
CE#
High Voltage
Circuit
CLE
WE#
WP#
RE#
IO Port
ALE
Control
Logic
X-DEC
4. BLOCK DIAGRAM
Memory Array
(Two planes for 2Gb/4Gb)
Page Buffer
ADDRESS
COUNTER
Y-DEC
R/B#
IO[7:0]
Data
Buffer
P/N: PM1975
ECC
Logic
REV. 1.1, MAY 04, 2015
13
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
5. SCHEMATIC CELL LAYOUT AND ADDRESS ASSIGNMENT
MX30LFxGE8AB NAND device is divided into two planes for 2Gb and 4Gb (the 1Gb is single plane), which
is composed by 64 pages of (2,048+64)-byte in two NAND strings structure with 32 serial connected cells in
each string. Each page has an additional 64 bytes for bad block marks and other purposes. The device has
an on-chip buffer of 2,112 bytes for data load and access. Each 2K-Byte page has the two area, one is the
main area which is 2048-bytes and the other is spare area which is 64-byte.
There are four (for 1Gb) or five (for 2Gb/4Gb) address cycles for the address allocation, please refer to the
table below.
Table 1. Address Allocation: MX30LFxGE8AB
Addresses
Column address - 1st cycle
Column address - 2nd cycle
Row address - 3rd cycle
Row address - 4th cycle
Row address - 5th cycle4
Notes:
IO7
IO6
IO5
IO4
IO3
IO2
IO1
IO0
A7
L
A19
A27
L
A6
L
A181
A26
L
A5
L
A17
A25
L
A4
L
A16
A24
L
A3
A11
A15
A23
L
A2
A10
A14
A22
L
A1
A9
A13
A21
A293
A0
A8
A12
A20
A282
1. A18 is the plane selection for 2Gb/4Gb.
2. A28 is for 2Gb and 4Gb.
3. A29 is for 4Gb, "L" (Low) for 2Gb.
4. The 5th cycle is for 2Gb/4Gb.
P/N: PM1975
REV. 1.1, MAY 04, 2015
14
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6. DEVICE OPERATIONS
6-1. Address Input/Command Input/Data Input
Address input bus operation is for address input to select the memory address. The command input bus
operation is for giving command to the memory. The data input bus is for data input to the memory device.
Figure 2. AC Waveforms for Command / Address / Data Latch Timing
CLE
ALE
CE#
tCS
/
/ tCLS / tALS
tCH tCLH
tWP
WE#
tDS
tDH
IO[7:0]
Figure 3. AC Waveforms for Address Input Cycle
tCLS
CLE
tWC
tWC
tWC
tWC
CE#
tWP
tWH
tWP
tWH
tWP
tWH
tWP
tWH
tWP
WE#
tALS
tALH
ALE
tDS
IO[7:0]
tDH
1st Address
Cycle
tDS
tDH
2nd Address
Cycle
P/N: PM1975
tDS
tDH
3rd Address
Cycle
tDS
tDH
4th Address
Cycle
tDS
tDH
5th Address
Cycle
REV. 1.1, MAY 04, 2015
15
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 4. AC Waveforms for Command Input Cycle
CLE
tCLS
tCLH
tCS
tCH
CE#
tWP
WE#
tALS
tALH
ALE
tDS
tDH
IO[7:0]
Figure 5. AC Waveforms for Data Input Cycle
tCLH
CLE
tCH
CE#
tWC
tWP
tWH
tWP
tWH
tWP
tWP
WE#
ALE
tALS
tDS
IO[7:0]
tDH
Din0
tDS
tDH
Din1
P/N: PM1975
tDS
tDH
Din2
tDS
tDH
DinN
REV. 1.1, MAY 04, 2015
16
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-2. Page Read
The MX30LFxGE8AB array is accessed in Page of 2,112 bytes. External reads begins after the R/B# pin
goes to READY.
The Read operation may also be initiated by writing the 00h command and giving the address (column and
row address) and being confirmed by the 30h command, the MX30LFxGE8AB begins the internal read
operation and the chip enters busy state. The data can be read out in sequence after the chip is ready. Refer
to the waveform for Read Operation as below.
If the host side uses a sequential access time (tRC) of less than 30ns, the data can be latched on the next
falling edge of RE# as the waveform of EDO mode (Figure 9-2).
To access the data in the same page randomly, a command of 05h may be written and only column address
following and then confirmed by E0h command.
Figure 6. AC Waveforms for Read Cycle
CLE
tCLS
tCLS
tCLH
tCLH
tCS
CE#
tWC
WE#
tALS
tAR
tALH
tALH
ALE
tRR
tR_ECC
tRC
tOH
RE#
tWB
tDS
IO[7:0]
00h
tDH
tDS tDH
1st Address
Cycle
tDS tDH
2nd Address
Cycle
tDS tDH
3rd Address
Cycle
tDS tDH
4th Address
Cycle
tDS tDH
5th Address
Cycle
tREA
tDS tDH
Dout
30h
Dout
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
17
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 7. AC Waveforms for Read Operation (Intercepted by CE#)
CLE
tCHZ
CE#
WE#
tAR
ALE
tOH
tRC
RE#
tRR
tR_ECC
tWB
IO[7:0]
00h
1st Address
Cycle
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
30h
Dout 0
Dout 1
Dout 2
Dout 3
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
18
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 8. AC Waveforms for Read Operation (with CE# Don't Care)
CLE
CE# Don’t Care
CE#
WE#
ALE
RE#
IO[7:0]
Start Addr (5 Cycles)
00h
Data Output (Sequential)
30h
R/B#
Busy
Note: The CE# "Don't Care" feature may simplify the system interface, which allows controller to directly
download the code from flash device, and the CE# transitions will not stop the read operation
during the latency time.
Figure 9-1. AC Waveforms for Sequential Data Out Cycle (After Read)
t CEA
CE#
tRC
tRP
RE#
t REH
t RP
t RHZ
tREA
IO[7:0]
tOH
Dout0
t REH
t RP
tRHZ
t REA
tOH
Dout1
t REA
t RP
tCOH
t CHZ
t RHZ
tRHZ
t OH
tOH
Dout2
DoutN
tRR
R/B#
P/N: PM1975
REV. 1.1, MAY 04, 2015
19
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 9-2. AC Waveforms for Sequential Data Out Cycle (After Read) - EDO Mode
t CEA
CE#
tRC
tRP
RE#
t REH
tRHZ
t REA
IO[7:0]
t RP
tRLOH t
Dout0
t REH
tRHZ
REA
t RP
tRLOH t
Dout1
t RP
t REH
t CHZ
t COH
tRHZ
REA
t RLOH
Dout2
tOH
DoutN
tRR
R/B#
P/N: PM1975
REV. 1.1, MAY 04, 2015
20
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 10. AC Waveforms for Random Data Output
A
tCLR
CLE
CE#
WE#
tAR
ALE
tRC
RE#
tRHW
tRR
tR_ECC
tWB
IO[7:0]
00h
1st Address
Cycle
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
Dout M
30h
Dout M+1
05h
R/B#
CLE
Busy
A
CE#
WE#
tWHR
ALE
RE#
tREA
IO[7:0]
05h
1st Address
Cycle
2nd Address
Cycle
E0h
Dout N
Dout N+1
R/B#
Repeat if needed
P/N: PM1975
REV. 1.1, MAY 04, 2015
21
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-3. Page Program
The memory is programmed by page, which is 2,112 bytes. After Program load command (80h) is issued
and the row and column address is given, the data will be loaded into the chip sequentially. Random Data
Input command (85h) allows multi-data load in non-sequential address. After data load is complete, program
confirm command (10h) is issued to start the page program operation. The page program operation in a block
should start from the low address to high address (A[17:12]). Partial program in a page is allowed up to 4
times. However, the random data input mode for programming a page is allowed and number of times is not
limited.
The status of the program completion can be detected by R/B# pin or Status register bit SR[6].
The program result is shown in the chip status bit (SR[0]). SR[0] = 1 indicates the Page Program is not
successful and SR[0] = 0 means the program operation is successful.
During the Page Program progressing, only the read status register command and reset command are
accepted, others are ignored.
Figure 11. AC Waveforms for Program Operation after Command 80H
CLE
tCLS
tCLH
CE#
tCS
tWC
WE#
tALS
tWB
tALH
tALH
ALE
RE#
tDS tDH
IO[7:0]
80h
tDS/tDH
Din
0
-
1st Address
Cycle
Din
n
10h
70h
Status
Output
2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
tPROG_ECC
R/B#
P/N: PM1975
REV. 1.1, MAY 04, 2015
22
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 12. AC Waveforms for Random Data In (For Page Program)
A
CLE
CE#
tWC
tADL
WE#
ALE
RE#
IO[7:0]
80h
1st Address 2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
Cycle
Din A
Din A+N
R/B#
A
CLE
CE#
tWC
tADL
WE#
tWB
ALE
RE#
IO[7:0]
85h
1st Address 2nd Address
Cycle
Cycle
Din B
Din B+M
70h
10h
Status
tPROG_ECC
R/B#
Repeat if needed
IO0 = 0; Pass
IO0 = 1; Fail
Note: Random Data In is also supported in cache program.
P/N: PM1975
REV. 1.1, MAY 04, 2015
23
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 13. AC Waveforms for Program Operation with CE# Don't Care
A
CLE
CE#
WE#
ALE
IO[7:0]
Start Add. (5 Cycles)
80h
Data Input
A
CLE
CE#
WE#
ALE
IO[7:0]
Data Input
Data Input
10h
Note: The CE# "Don't Care" feature may simplify the system interface, which allows the controller to
directly write data into flash device, and the CE# transitions will not stop the program operation
during the latency time.
P/N: PM1975
REV. 1.1, MAY 04, 2015
24
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-4. Cache Program
The cache program feature enhances the program performance by using the cache buffer of 2,112-byte.
The serial data can be input to the cache buffer while the previous data stored in the buffer are programming
into the memory cell. Cache Program command sequence is almost the same as page program command
sequence. Only the Program Confirm command (10h) is replaced by cache Program command (15h).
After the Cache Program command (15h) is issued. The user can check the status by the following methods.
- R/B# pin
- Cache Status Bit (SR[6] = 0 indicates the cache is busy; SR[6] = 1 means the cache is ready).
The user can issue another Cache Program Command Sequence after the Cache is ready. The user can
always monitor the chip state by Ready/Busy Status Bit (SR[5]). The user can issues either program confirm
command (10h) or cache program command (15h) for the last page if the user monitor the chip status by
issuing Read Status Command (70h).
However, if the user only monitors the R/B# pin, the user needs to issue the program confirm command (10h)
for the last page.
The user can check the Pass/Fail Status through P/F Status Bit (SR[0]) and Cache P/F Status Bit (SR[1]).
SR[1] represents Pass/Fail Status of the previous page. SR[1] is updated when SR[6] change from 0 to 1 or
Chip is ready. SR[0] shows the Pass/Fail status of the current page. It is updated when SR[5] change from "0"
to "1" or the end of the internal programming. For more details, please refer to the related waveforms.
P/N: PM1975
REV. 1.1, MAY 04, 2015
25
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 14-1. AC Waveforms for Cache Program
A
CLE
CE#
tADL
tWC
WE#
tWB
ALE
RE#
IO[7:0]
80h
1st Address
Cycle
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
Din
Din
15h
tCBSY
R/B#
Busy
A
CLE
CE#
tADL
WE#
tWB
ALE
RE#
IO[7:0]
80h
1st Address
Cycle
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
Din
Din
70h
10h
Status
Output
tPROG_ECC
R/B#
Note
Busy
Note: It indicates the last page Input & Program.
P/N: PM1975
REV. 1.1, MAY 04, 2015
26
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 14-2. AC Waveforms for Sequence of Cache Program
A
IO[7:0]
1st Address 2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
Cycle
80h
Din
Din
15h
80h
1st Address 2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
Cycle
Din
Din
15h
80h
R/B#
Busy - tCBSY
Busy - tCBSY
A
IO[7:0]
80h
1st Address 2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
Cycle
Din
Din
15h
80h
1st Address 2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
Cycle
Din
Din
10h
70h
R/B#
Busy - tCBSY
Busy - tPROG_ECC
Note: tPROG_ECC = Page (Last) programming + Page (Last-1) programming time - Input cycle time of
command & address - Data loading time of Page (Last).
Note 2
P/N: PM1975
REV. 1.1, MAY 04, 2015
27
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-5. Block Erase
The MX30LFxGE8AB supports a block erase command. This command will erase a block of 64 pages associated with the most significant address bits.
The completion of the erase operation can be detected by R/B# pin or Status register bit (IO6). Recommend
to check the status register bit IO0 after the erase operation completes.
During the erasing process, only the read status register command and reset command can be accepted,
others are ignored.
Figure 15. AC Waveforms for Erase Operation
CLE
tCLS
tCLH
CE#
tCS
tWC
WE#
tALH
tALS
ALE
tWB
RE#
tDS
IO[7:0]
tDH
tDS
tDH
tDS
tDH
60h
tDS
tDH
70h
D0h
3rd Address Cycle
4th Address Cycle 5th Address Cycle
Stauts
Output
tERASE
R/B#
P/N: PM1975
REV. 1.1, MAY 04, 2015
28
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-6. ID Read
The device contains ID codes that identify the device type and the manufacturer. The ID READ command
sequence includes one command Byte (90h), one address byte (00h). The Read ID command 90h may
provide the manufacturer ID (C2h) of one-byte and device ID of one-byte, also Byte2, Byte3, and Byte4 ID
code are followed.
The device support ONFI Parameter Page Read, by sending the ID Read (90h) command and following one
byte address (20h), the four-byte data returns the value of 4Fh-4Eh-46h-49h for the ASCII code of "O"-"N""F"-"I" to identify the ONFI parameter page.
Table 2. ID Codes Read Out by ID Read Command 90H
1Gb
Byte0-Manufacturer
Byte1: Device ID
Byte2
Byte3
Byte4
2Gb
Byte0-Manufacturer
Byte1: Device ID
Byte2
1Gb, x8, 3V
C2h
F1h
80h
95h
82h
2Gb, x8, 3V
C2h
DAh
90h
Byte3
Byte4
4Gb
Byte0-Manufacturer
Byte1: Device ID
Byte2
Byte3
Byte4
95h
86h
4Gb, x8, 3V
C2h
DCh
90h
95h
D6h
P/N: PM1975
REV. 1.1, MAY 04, 2015
29
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Table 3. The Definition of Byte2~Byte4 of ID Table
Terms
Description
IO7
IO6
IO5
IO4
IO3
IO2
IO1
IO0
0
0
0
1
0
1
1
0
Byte 2
Die# per CE
1
2
Cell type
SLC
# of Simultaneously
Programmed page
1
0
0
2
0
1
Interleaved operations
between Multiple die
Cache Program
Byte 3
Page size
Spare area size
Block size (without spare)
Organization
Sequential access (min.)
Byte 4
Internal ECC level
#Plane per CE
Plane size
Internal ECC state
0
Not supported
Supported
2KB
64B
128KB
x8
20ns
4-bit ECC/524B
1
2
4
1Gb
2Gb
ECC enabled
0
0
1
1
0
1
0
1
0
0
0
1
0
1
0
0
0
1
0
0
1
1
P/N: PM1975
REV. 1.1, MAY 04, 2015
30
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 16-1. AC Waveforms for ID Read Operation
CLE
tCLS
tCS
CE#
tCHZ
WE#
tALH
tALS
tAR
ALE
tOH
RE#
tWHR
tDS
IO[7:0]
90h
tREA
tDH
00h
C2h
(note)
(note)
(note)
(note)
Note: See also Table 2. ID Codes Read Out by ID Read Command 90H.
Figure 16-2. AC Waveforms for ID Read (ONFI Identifier) Operation
CLE
tCLS
tCS
CE#
tCHZ
WE#
tALH
tALS
tAR
ALE
tOH
RE#
tWHR
tDS
IO[7:0]
90h
tDH
20h
tREA
4Fh
4Eh
P/N: PM1975
46h
49h
REV. 1.1, MAY 04, 2015
31
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-7. Status Read
The MX30LFxGE8AB provides a status register that outputs the device status by writing a command code
70h, and then the IO pins output the status at the falling edge of CE# or RE# which occurs last. Even though
when multiple flash devices are connecting in system and the R/B#pins are common-wired, the two lines of
CE# and RE# may be checked for individual devices status separately.
The status read command 70h will keep the device at the status read mode unless next valid command is
issued. The resulting information is outlined in Table 4-1 and Table 4-2.
Table 4-1. Status Output
Pin
SR[0]
Status
Chip Status
Related Mode
Value
Page Read, Page Program,
Cache Program (Page N),
Block Erase (Note 1)
0: Passed
1: Failed Cache Program
(Page N-1)
0: Passed
1: Failed
SR[2]
Cache Program
Result
Not Used
SR[3]
Internal ECC Status Page Read (Note 1)
See ECC bits Table below
SR[4]
Internal ECC Status Page Read (Note 1)
See ECC bits Table below
SR[1]
SR[5]
SR[6]
SR[7]
Cache Program, other Page
Program/Block Erase/Read
(For P/E/R Controller) are same as IO6 (Note 2)
Page Program, Block Erase,
Ready / Busy
Cache Program, Read
(Note 3)
Page Program, Block Erase,
Write Protect
Cache Program, Read
Ready / Busy
0: Busy
1: Ready
0: Busy
1: Ready
0: Protected
1: Unprotected
Notes:
1. ECC status for current output page.
2. During the actual programming operation, the SR[5] is "0" value; however, when the internal operation is completed during the cache mode, the SR[5] returns to "1".
3. The SR[6] returns to "1" when the internal cache is available to receive new data. The SR[6] value is
consistent with the R/B#.
Table 4-2. ECC Bits Status
SR[4]
0
0
1
0
1
SR Bits and Value
SR[3]
SR[0]
0
1
0
0
0
0
1
0
1
0
Status of Error Bits Correction
Uncorrectable
0-1 bits error and been corrected
2 bits error and been corrected
3 bits error and been corrected
4 bits error and been corrected
P/N: PM1975
REV. 1.1, MAY 04, 2015
32
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
The following is an example of a HEX data bit assignment:
Figure 17. Bit Assignment (HEX Data)
Status Read: 70h
0
1
1
1
0
0
0
0
SR7
6
5
4
3
2
1 SR0
Figure 18. AC Waveforms for Status Read Operation
tCLR
CLE
tCLS
tCLH
CE#
tCS
tWP
WE#
tCHZ
tWHR
RE#
tOH
tIR
tDS tDH
IO[7:0]
tREA
Status
Output
70h
P/N: PM1975
REV. 1.1, MAY 04, 2015
33
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-8. Status Enhance Read
The 2Gb and 4Gb support the two-plane operation, the Status Enhanced Read command (78h) offers the
alternative method besides the Status Read command to get the status of specific plane in the same NAND
Flash device. The result information is outlined in Table 4-1 and Table 4-2.
The [SR]6 and SR[5] bits are shared with all planes. However, the SR[0], SR[1], SR[3], SR[4] are for the
status of specific plane in the row address. The Status Enhanced Read command is not allowed at power-on
Reset (FFh) command and OTP enabled.
Figure 19. AC Waveforms for Status Enhance Operation
CLE
tCLS
tCS
CE#
tCHZ
WE#
tALH
tALS
tAR
ALE
tOH
RE#
tWHR
tDS
IO[7:0]
78h
tREA
tDH
3rd Address
Cycle
4th Address
Cycle
P/N: PM1975
5th Address
Cycle
Status
Output
REV. 1.1, MAY 04, 2015
34
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-9. Reset
The reset command FFh resets the read/program/erase operation and clear the status register to be E0h (when
WP# is high). The reset command during the program/erase operation will result in the content of the selected
locations(perform programming/erasing) might be partially programmed/erased.
If the Flash memory has already been set to reset stage with reset command, the additional new reset
command is invalid.
Figure 20. AC waveforms for Reset Operation
CLE
CE#
WE#
ALE
RE#
tWB
IO[7:0]
FFh
tRST
R/B#
P/N: PM1975
REV. 1.1, MAY 04, 2015
35
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-10. Parameter Page Read (ONFI)
The NAND Flash device support ONFI Parameter Page Read and the parameter can be read out by sending
the command of ECh and giving the address 00h. The NAND device information may refer to the table of
parameter page(ONFI), there are three copies of 256-byte data and additional redundant parameter pages.
Once sending the ECh command, the NAND device will remain in the Parameter Page Read mode until next
valid command is sent.
The Random Data Out command set (05h-E0h) can be used to change the parameter location for the specific
parameter data random read out.
The Status Read command (70h) can be used to check the completion with a following read command (00h)
to enable the data out.
The internal ECC is disabled on the parameter page.
Figure 21. AC waveforms for Parameter Page Read (ONFI) Operation
tCLR
CLE
CE#
WE#
tAR
ALE
tRC
RE#
tRR
tWB
tR_ECC
IO[7:0]
ECh
Parameter 0
Dout 0
00h
Parameter 0
Dout 1
Parameter 0
Dout 255
Parameter 1
Dout 0
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
36
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 22. AC Waveforms for Parameter Page Read (ONFI) Random Operation (For 05h-E0h)
tCLR
CLE
CE#
WE#
tWHR
tAR
ALE
tRC
RE#
tRR
tWB
tR_ECC
IO[7:0]
ECh
tREA
Parameter 0
Dout 0
00h
Parameter 0
Dout 1
05h
R/B#
1st Address
Cycle
2nd Address
Cycle
E0h
Parameter m
Dout n
Parameter m
Dout n+1
Repeat if needed
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
37
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Table 5. Parameter Page (ONFI)
Byte#
0-3
4-5
6-7
8-9
10-31
Byte#
32-43
Revision Information and Features Block
Description
Data
Parameter Page Signature
Revision Number
Features Supported
Optional Commands
Supported
Reserved
Manufacturer Information Block
Description
Data
4Dh,41h,43h,52h,4Fh,4Eh,49h,58h,
20h,20h,20h,20h
MX30LF1GE8AB 4Dh,58h,33h,30h,4Ch,46h,31h,47h,
45h,38h,41h,42h,20h,20h,20h,20h,
20h,20h,20h,20h
MX30LF2GE8AB 4Dh,58h,33h,30h,4Ch,46h,32h,47h
,45h,38h,41h,42h,20h,20h,20h,20h,
20h,20h,20h,20h
MX30LF4GE8AB 4Dh,58h,33h,30h,4Ch,46h,34h,47h,
45h,38h,41h,42h,20h,20h,20h,20h,
20h,20h,20h,20h
C2h
00h, 00h
00h
Device Manufacturer (12 ASCII characters)
Device Model
(20 ASCII Characters)
44-63
64
65-66
67-79
1Gb, x8
2Gb, x8
4Gb, x8
1Gb
2Gb
4Gb
4Fh, 4Eh, 46h, 49h
02h, 00h
10h, 00h
18h, 00h
18h, 00h
35h, 00h
3Dh, 00h
3Dh, 00h
00h
JEDEC Manufacturer ID
Date Code
Reserved
P/N: PM1975
REV. 1.1, MAY 04, 2015
38
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Byte#
Memory Organization Block
Description
80-83
84-85
86-89
90-91
92-95
Number of Data Bytes per Page
Number of Spare Bytes per Page
Number of Data Bytes per Partial Page
Number of Spare Bytes per Partial Page
Number of Pages per Block
96-99
Number of Blocks per Logical Unit
100
Number of Logical Units (LUNs)
101
Number of Address Cycles
102
Number of Bits per Cell
1Gb
2Gb
4Gb
1Gb
2Gb
4Gb
103-104 Bad Blocks Maximum per LUN
105-106
107
108-109
110
111
112
Block endurance
Guarantee Valid Blocks at Beginning of Target
Block endurance for guaranteed valid blocks
Number of Programs per Page
Partial Programming Attributes
Number of Bits ECC Correctability
113
Number of Interleaved Address Bits
114
Interleaved Operation Attributes
115-127 Reserved
Byte#
128
129-130
131-132
133-134
135-136
137-138
139-140
141-163
1Gb
2Gb
4Gb
1Gb
2Gb
4Gb
1Gb
2Gb
4Gb
Data
00h,08h,00h,00h
40h,00h
00h,02h,00h,00h
10h,00h
40h,00h,00h,00h
00h,04h,00h,00h
00h,08h,00h,00h
00h,10h,00h,00h
01h
22h
23h
23h
01h
14h,00h
28h,00h
50h,00h
01h,05h
01h
01h,03h
04h
00h
00h
00h
01h
01h
00h
0Eh
0Eh
00h
Electrical Parameters Block
Description
Data
I/O Pin Capacitance
Timing Mode Support
Program Cache Timing Mode Support
tPROG Maximum Page Program Time (uS) 600us
tBERS (tERASE) Maximum Block Erase
3500us
Time (uS)
tR Maximum Page Read Time (uS)
70us
tCCS Minimum Change Column
60ns
Setup Time (ns)
Reserved
P/N: PM1975
0Ah
3Fh,00h
3Fh,00h
58h,02h
ACh,0Dh
46h,00h
3Ch,00h
00h
REV. 1.1, MAY 04, 2015
39
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Byte#
Vendor Blocks
Description
Byte#
Redundant Parameter Pages
Description
Data
164-165 Vendor Specific Revision Number
166-253 Vendor Specific
254-255 Integrity CRC
Data
00h
00h
Set at Test (Note)
256-511 Value of Bytes 0-255
512-767 Value of Bytes 0-255
768+
Additional Redundant Parameter Pages
Note:
The Integrity CRC (Cycling Redundancy Check) field is used to verify that the contents of the parameters
page were transferred correctly to the host. Please refer to ONFI 1.0 specifications for details.
The CRC shall be calculated using the following 16-bit generator polynomial:
G(X) = X16 + X15 +X2 + 1
6-11. Unique ID Read (ONFI)
The unique ID is 32-byte and with 16 copies for back-up purpose. After writing the Unique ID read command
(EDh) and following the one address byte (00h), the host may read out the unique ID data. The host need to
XOR the 1st 16-byte unique data and the 2nd 16-byte complement data to get the result, if the result is FFh,
the unique ID data is correct; otherwise, host need to repeat the XOR with the next copy of Unique ID data.
The internal ECC is disabled on the unique ID.
Once sending the EDh command, the NAND device will remain in the Unique ID read mode until next valid
command is sent.
To change the data output location, it is recommended to use the Random Data Out command set (05h-E0h).
The Status Read command (70h) can be used to check the completion. To continue the read operation, a
following read command (00h) to re-enable the data out is necessary.
P/N: PM1975
REV. 1.1, MAY 04, 2015
40
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 23. AC waveforms for Unique ID Read Operation
tCLR
CLE
CE#
WE#
tAR
ALE
tRC
RE#
tRR
tWB
tR_ECC
IO[7:0]
EDh
Unique ID 0
Dout 0
00h
Unique ID 0
Dout 1
Unique ID 0
Dout 31
Unique ID 1
Dout 0
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
41
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 24. AC waveforms for Unique ID Read Operation (For 05h-E0h)
tCLR
CLE
CE#
WE#
tWHR
tAR
ALE
tRC
RE#
tRR
tWB
tR_ECC
IO[7:0]
EDh
tREA
Unique ID 0
Dout 0
00h
Unique ID 0
Dout 1
05h
R/B#
1st Address
Cycle
2nd Address
Cycle
E0h
Unique ID m
Dout n
Unique ID m
Dout n+1
Repeat if needed
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
42
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-12. Feature Set Operation (ONFI)
The Feature Set operation is to change the default power-on feature sets by using the Set Feature and Get
Feature command and writing the specific parameter data (P1-P4) on the specific feature addresses. The
NAND device may remain the current feature set until next power cycle since the feature set data is volatile.
However, the reset command (FFh) can not reset the current feature set.
Table 6-1. Definition of Feature Address
Feature Address
00h-8Fh, 91h-FFh
90h
Description
Reserved
Array Operation Mode
Table 6-2. Sub-Feature Parameter Table of Feature Address - 90h (Array Operation Mode)
Sub Feature
Parameter
Definition
P1
Normal
Array
Operation OTP Operation
Mode
OTP Protection
P2
P3
P4
IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0
Reserved (0)
1
0
Reserved (0)
1
0
Reserved (0)
1
0
Reserved (0)
Reserved (0)
Reserved (0)
0
0
1
Values
0 0000 1000b
1 0000 1001b
1 0000 1011b
0000 0000b
0000 0000b
0000 0000b
Notes
1
Note 1: The value is clear to 08h at power cycle.
P/N: PM1975
REV. 1.1, MAY 04, 2015
43
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-12-1.Set Feature (ONFI)
The Set Feature command is to change the power-on default feature set. After sending the Set Feature
command (EFh) and following specific feature and then input the P1-P4 parameter data to change the default
power-on feature set. Once sending the EFh command, the NAND device will remain in the Set Feature mode
until next valid command is sent.
The Status Read command (70h) may check the completion of the Set Feature.
Figure 25. AC Waveforms for Set Feature (ONFI) Operation
CLE
CE#
tADL
tWC
WE#
tWB
ALE
RE#
IO[7:0]
EFh
Feature
Address
Din
Din
Din
Din
tFEAT
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
44
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-12-2.Get Feature (ONFI)
The Get Feature command is to read sub-feature parameter. After sending the Get Feature command (EEh)
and following specific feature, the host may read out the P1-P4 sub- feature parameter data. Once sending
the EEh command, the NAND device will remain in the Get Feature mode until next valid command is sent.
The Status Read command (70h) can be used to check the completion. To continue the read operation, a
following read command (00h) to re-enable the data out is necessary.
Please refer to the following waveform of Get Feature Operation for details.
Figure 26. AC Waveforms for Get Feature (ONFI) Operation
tCLR
CLE
CE#
WE#
tAR
ALE
tRC
RE#
tRR
tWB
tFEAT
IO[7:0]
EEh
Feature
Address
Feature
Dout 0
Feature
Dout 1
Feature
Dout 2
Feature
Dout 3
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
45
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-12-3.Secure OTP (One-Time-Programmable) Feature
There is an OTP area which has thirty full pages (30 x 2112-byte) guarantee to be good for system
device serial number storage or other fixed code storage. The OTP area is a non-erasable and one-timeprogrammable area, which is default to “1” and allows whole page or partial page program to be “0”, once the
OTP protection mode is set, the OTP area becomes read-only and cannot be programmed again.
The OTP operation is operated by the Set Feature/ Get Feature operation to access the OTP operation mode
and OTP protection mode.
To check the NAND device is ready or busy in the OTP operation mode, either checking the R/B# or writing
the Status Read command (70h) may collect the status.
To exit the OTP operation or protect mode, it can be done by writing 08h to P1 at feature address 90h.
OTP Read/Program Operation
To enter the OTP operation mode, it is by using the Set Feature command (EFh) and followed by the feature
address (90h) and then input the 01h to P1 and 00h to P2-P4 of sub-Feature Parameter data( please refer to
the sub-Feature Parameter table). After enter the OTP operation mode, the normal Read command (00h-30h)
or Page program( 80h-10h) command can be used to read the OTP area or program it. The address of OTP
is located on the 02h-1Fh of page address.
Besides the normal Read command, the Random Data Output command (05h-E0h) can be used for read
OTP data.
Besides the normal page program command, the Random Data Input command (85h) allows multi-data load
in non-sequential address. After data load is completed, a program confirm command (10h) is issued to start
the page program operation. The number of partial-page OTP program is 4 per each OTP page.
Figure 27. AC Waveforms for OTP Data Read
tCLR
CLE
CE#
WE#
tAR
ALE
tRC
RE#
tRR
tWB
IO[7:0]
00h
1st Address 2nd Address
Cycle
Cycle
OTP
Page
00h
00h
tR_ECC
Dout 0
30h
Dout 1
Dout n
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
46
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 28. AC Waveforms for OTP Data Read with Random Data Output
A
tCLR
CLE
CE#
WE#
tAR
ALE
tRC
RE#
tRHW
tRR
tWB
IO[7:0]
00h
1st Address
Cycle
2nd Address
Cycle
OTP
Page
00h
00h
tR_ECC
Dout M
30h
Dout M+1
05h
R/B#
Busy
CLE
A
CE#
WE#
tWHR
ALE
RE#
tREA
IO[7:0]
05h
1st Address
Cycle
2nd Address
Cycle
E0h
Dout N
Dout N+1
R/B#
Repeat if needed
P/N: PM1975
REV. 1.1, MAY 04, 2015
47
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 29. AC Waveforms for OTP Data Program
CLE
CE#
tADL
WE#
tWB
ALE
RE#
IO[7:0]
80h
1st Address 2nd Address 3rd Address 4th Address
Cycle
Cycle
Cycle
Cycle
5th Address
Cycle
Din
Din
70h
10h
Status
Output
-tPROG_ECC
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
48
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 30. AC Waveforms for OTP Data Program with Random Data Input
A
CLE
CE#
tADL
tWC
WE#
ALE
RE#
IO[7:0]
80h
1st Address 2nd Address
Cycle
Cycle
OTP
Page
00h
00h
Din
Din
R/B#
A
CLE
CE#
tADL
WE#
tWB
ALE
RE#
IO[7:0]
85h
1st Address 2nd Address
Cycle
Cycle
Din
Din
70h
10h
Status
Output
tPROG_ECC
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
49
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
OTP Protection Operation
To prevent the further OTP data to be changed, the OTP protection mode operation is necessary. To enter the
OTP protection mode, it can be done by using the Set Feature command (EFh) and followed by the feature
address (90h) and then input the 03h to P1 and 00h to P2-P4 of sub-Feature Parameter data (please refer to
the sub-Feature Parameter table). And then the normal page program command (80h-10h) with the address
00h before the 10h command is required.
The OTP Protection mode is operated by the whole OTP area instead of individual OTP page. Once the OTP
protection mode is set, the OTP area cannot be programmed or unprotected again.
Figure 31. AC Waveforms for OTP Protection Operation
CLE
tCLS
tCLH
CE#
tCS
tWC
WE#
tALS
tALH
tWB
tALH
ALE
RE#
tDS
IO[7:0]
tDH
-
80h
1st Address
Cycle
Note
-
00h
00h
00h
10h
70h
Status
Output
Dummy data
input
2nd Address
Cycle
tPROG_ECC
R/B#
Note: This address cycle can be any value since the OTP protection protects the entire OTP area instead
of individual OTP page
P/N: PM1975
REV. 1.1, MAY 04, 2015
50
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-12-4.Internal ECC Always Enabled
The internal ECC logic may detect 5-bit error and correct 4-bit error. The internal ECC is always enabled.
After the data transfer time (tR_ECC) is completed, a Status Read command (70h) is required to check
any uncorrectable read error happened. Please refer to Table 4-1. Status Output and Table 4-2. ECC Bit
Status.
The constraint of the internal ECC operation:
•
The ECC protection coverage: please refer to Table 7-1 & 7-2. The Distribution of ECC Segment and Spare Area. Only the grey areas are under internal ECC protection when the internal ECC is enabled.
•
The number of partial-page program is not 4 in an ECC segment, the user need to program the main area (512B) + spare area (1st 8-byte for 4Gb and whole 16-byte for 1Gb/2Gb) together at one time
of program operation, so the ECC parity code can be calculated properly and stored in the additional
hidden spare area.
Table 7-1 For 4Gb, the Distribution of ECC Segment and Spare Area in a Page
Main0
(512B)
Main Area (2KB)
Main1
(512B)
Main2
(512B)
Main3
(512B)
Spare Area (64B)
Spare0(16B)
8B
8B
(Reserved)
Spare1(16B)
8B
8B
(Reserved)
Spare2(16B)
8B
8B
(Reserved)
Spare3(16B)
8B
8B
(Reserved)
Note: Grey color area: Under ECC protection
Table 7-2 For 1Gb/2Gb, the Distribution of ECC Segment and Spare Area in a Page
Main0
(512B)
Main Area (2KB)
Main1
(512B)
Main2
(512B)
Main3
(512B)
Spare Area (64B)
Spare0(16B)
16B
Spare1(16B)
16B
Spare2(16B)
16B
Spare3(16B)
16B
Note: Grey color area: Under ECC protection
P/N: PM1975
REV. 1.1, MAY 04, 2015
51
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-13. Two-Plane Operations
The 2Gb/4Gb NAND device is divided into two planes for performance improvement. In the two-plane
operation, the NAND device may proceed the same type operation (for example- Program, or Erase) on the
two planes concurrent or overlapped by the two-plane command sets. The different type operations cannot
be done in the two-plane operations; for example, it cannot be done to erase one plane and program the
other plane concurrently.
The plane address A18 must be different from each selected plane address. The page address A12-A17 of
individual plane must be the same for two-plane operation.
The Status Read command( 70h) may check the device status in the two-plane operation, if the result is
failed and then the Status Enhanced Read (78h) may check which plane is failed.
6-14. Two-plane Program (ONFI) and Two-plane Cache Program (ONFI)
The two-plane program command (80h-11h) may input data to cache buffer and wait for the final plane data
input with command (80h-10h) and then transfer all data to NAND array. As for the two-plane cache program
operation, it can be achieved by a two-plane program command (80h-11h) with a cache program command
(80h-15h), and the final address input with the confirm command (80h-10h). Please refer to the waveforms of
two-plane program and two-plane cache program for details. The random data input command (85h) can be
also used in the two-plane program operation for changing the column address, please refer to the waveform
of two-plane program with random data input.
Notes:
1. Page number should be the same for both planes.
2. Block address [29:18] can be different.
For examples:
If the user issues 80h-(block address 5h, page address 5h) -11h - 80h - (block address - 18h, page address 5h) - 10h, the programmed page is
- Plane 0: block address 18h, page address 5h
- Plane 1: block address 5h, page address 5h
(Note: Block address = A [29:18], page address = A [17:12])
P/N: PM1975
REV. 1.1, MAY 04, 2015
52
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 32-1. AC Waveforms for Two-plane Program (ONFI)
A
CLE
CE#
tADL
tWC
WE#
tWB
ALE
RE#
IO[7:0]
80h
1st Address 2nd Address 3rd Address
Cycle
Cycle
Cycle
4th Address
Cycle
5th Address
Cycle
Din
Din
11h
tDBSY
R/B#
Busy
A
CLE
CE#
tADL
WE#
tWB
ALE
RE#
IO[7:0]
80h
1st Address 2nd Address 3rd Address 4th Address
Cycle
Cycle
Cycle
Cycle
5th Address
Cycle
Din
Din
70h
10h
Status
Output
tDPROG_ECC
R/B#
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
53
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 32-2. AC Waveforms for Page Program Random Data Two-plane (ONFI)
A
CLE
CE#
tADL
tWC
tADL
tWC
WE#
tWB
ALE
RE#
IO[7:0]
80h
1st Address 2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
Cycle
Din
Din
85h
1st Address 2nd Address
Cycle
Cycle
Din
Din
11h
tDBSY
R/B#
Reapeat if needed
Busy
A
CLE
CE#
tADL
tADL
tWC
WE#
tWB
ALE
RE#
IO[7:0]
80h
1st Address 2nd Address 3rd Address 4th Address
Cycle
Cycle
Cycle
Cycle
5th Address
Cycle
Din
85h
Din
1st Address 2nd Address
Cycle
Cycle
Din
Din
70h
10h
Status
Output
tDPROG_ECC
R/B#
Reapeat if needed
P/N: PM1975
Busy
REV. 1.1, MAY 04, 2015
54
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 33. AC Waveforms for Two-plane Cache Program (ONFI)
A
CLE
CE#
tADL
tADL
WE#
tWB
tWB
ALE
RE#
IO[7:0]
80h
1st Address
Cycle
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
Din
Din
1st Address
Cycle
80h
11h
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
tDBSY
Plane 1
Din
Din
15h
tCBSY
Plane 2
R/B#
Busy
Busy
Repeat if needed
A
CLE
CE#
tADL
tADL
tWC
WE#
tWB
tWB
ALE
RE#
IO[7:0]
80h
1st Address
Cycle
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
Plane 1
Din
Din
11h
80h
tDBSY
1st Address
Cycle
2nd Address
Cycle
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
Plane 2
Din
Din
10h
70h
Status
Output
tDPROG_ECC
R/B#
Busy
Busy
P/N: PM1975
REV. 1.1, MAY 04, 2015
55
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
6-15. Two-plane Block Erase (ONFI)
The two-plane erase command (60h-D1h) may erase the selected blocks in parallel from each plane, with
setting the 1st and 2nd block address by (60h-D1h) & (60h-D0h) command and then erase two selected
blocks from NAND array. Please refer to the waveforms of two-plane erase for details.
Figure 34. AC Waveforms for Two-plane Erase (ONFI)
CLE
tCLS
CE#
tCS
tCLS
tCLH
tCLH
tWC
WE#
tALH
tWC
tALS
tALH
tALS
ALE
tWB
RE#
tDS
IO[7:0]
R/B#
tDH
tDS
tDH
tDS
tDH
tDS
tWB
tDH
60h
tDS
D1h
3rd Address
Cycle
4th Address
Cycle
5th Address
Cycle
tDH
tDS
tDH
tDS
tDH
tDS
tDH
60h
3rd Address
Cycle
tDBSY
P/N: PM1975
70h
D0h
4th Address
Cycle
5th Address
Cycle
Stauts
Output
tERASE
REV. 1.1, MAY 04, 2015
56
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
7. PARAMETERS
7-1. ABSOLUTE MAXIMUM RATINGS
Temperature under Bias
-50°C to +125°C
Storage temperature
-65°C to +150°C
All input voltages with respect to ground (Note 2)
-0.6V to 4.6V
VCC supply voltage with respect to ground (Note 2)
-0.6V to 4.6V
ESD protection
>2000V
Notes:
1. Minimum voltage may undershoot to -2V for the period of time less than 20ns.
2. The reliability of device may be impaired by exposing to extreme maximum rating conditions for long range of time.
3. Permanent damage may be caused by the stresses higher than the "Absolute Maximum Ratings" listed.
P/N: PM1975
REV. 1.1, MAY 04, 2015
57
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Table 8. Operating Range
Temperature
-40°C to +85°C
VCC
Tolerance
+3.3V
2.7 ~ 3.6V
Table 9. DC Characteristics
Symbol
Parameter
VIL
Input low level
VIH
Input high level
VOL
VOH
ISB1
ISB2
ICC0
ICC1
ICC2
ICC3
Test Conditions
Min.
Typical
-0.3
0.8VCC
IOL= 2.1mA, VCC=
Output low voltage
VCC Min.
IOH= -400uA, VCC=
Output high voltage
VCC-0.2V
VCC Min.
CE# = VCC -0.2V,
VCC standby current (CMOS)
WP# = 0/VCC
CE# = VIH Min.,
VCC standby current (TTL)
WP# = 0/VCC
Power on current (Including
POR current)
VCC active current
tRC Min., CE# = VIL,
(Sequential Read)
IOUT= 0mA
VCC active current
(Program)
VCC active current (Erase)
Max.
Unit Notes
0.2VCC
V
VCC + 0.3
V
0.2
V
V
10
50
uA
1
mA
30
mA
20
30
mA
2
20
30
mA
1, 2
15
30
mA
ILI
Input leakage current
VIN= 0 to VCC Max.
+/- 10
uA
ILO
Output leakage current
VOUT= 0 to VCC
Max.
+/- 10
uA
ILO
Output current of R/B# pin
(R/B#)
VOL=0.4V
8
10
mA
Notes:
1. The typical program current (ICC2) for two-plane program operation is 25mA.
2. ICC1/ICC2 typical value is 15mA for 1Gb.
P/N: PM1975
REV. 1.1, MAY 04, 2015
58
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Table 10. Capacitance
TA = +25°C, F = 1 MHz
Symbol
Parameter
CIN
COUT
Typ.
Max.
Units
Conditions
Input capacitance
10
pF
VIN = 0 V
Output capacitance
10
pF
VOUT = 0 V
Table 11. AC Testing Conditions
Testing Conditions
Input pulse level
Output load capacitance
Input rise and fall time
Input timing measurement reference levels
Output timing measurement reference levels
Value
Unit
0 to VCC
1TTL+CL(50)
5
VCC/2
VCC/2
V
pF
ns
V
V
Table 12. Program and Erase Characteristics
Symbol
tPROG_ECC
tDPROG_ECC
tCBSY (Program)
tDBSY
tFEAT
tOBSY_ECC
NOP
tERASE (Block)
Parameter
Page programming time under internal ECC enalbed
Two-plane programming time under internal ECC
enalbed
2G/4G
Dummy busy time for cache program
1G
The busy time for two-plane program/erase operation
The busy time for Set Feature/ Get Feature
The busy time for OTP program at OTP protection mode
under internal ECC enabled
Number of partial program cycles in same page
Block erase time
Min. Typ. Max. Unit Note
320
600
us
350
600
us
3
25
0.5
600
600
1
1
us
us
us
us
50
us
4
3.5
cycles
ms
1
1
Note:
1: Both 2Gb and 4Gb owns an additional cache to improve the busy time.
P/N: PM1975
REV. 1.1, MAY 04, 2015
59
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Table 13. AC Characteristics
Symbol
Parameter
Min. Typical
Max.
Unit
Note
tCLS
tCLH
tCS
tCH
tWP
tALS
CLE setup time
CLE hold time
CE# setup time
CE# hold time
Write pulse width
ALE setup time
10
5
15
5
10
10
ns
ns
ns
ns
ns
ns
1
1
1
1
1
1
tALH
ALE hold time
5
ns
1
tDS
Data setup time
7
ns
1
tDH
Data hold time
5
ns
1
tWC
Write cycle time
20
ns
1
tWH
WE# high hold time
7
ns
1
tADL
70
ns
1
tWW
tRR
Last address latched to data loading time during
program operations
WP# transition to WE# high
Ready to RE# falling edge
100
20
ns
ns
1
1
tRP
Read pulse width
10
ns
1
tRC
Read cycle time
20
ns
1
tREA
RE# access time (serial data access)
16
ns
1
tCEA
CE# access time
25
ns
1
tRLOH
RE#-low to data hold time (EDO)
5
ns
tOH
Data output hold time
15
ns
1
tRHZ
RE#-high to output-high impedance
60
ns
1
tCHZ
CE#-high to output-high impedance
50
ns
1
tCOH
CE# high to output hold time
15
ns
tREH
RE# high hold time
7
ns
1
tIR
Output high impedance to RE# falling edge
0
ns
1
tRHW
RE# high to WE# low
60
ns
1
tWHR
WE# high to RE# low
60
ns
1
tR_ECC
70
us
1
tWB
The data transfering from array to buffer under
internal ECC enabled
WE# high to busy
100
ns
1
tCLR
CLE low to RE# low
10
ns
1
tAR
ALE low to RE# low
10
ns
1
tRST
Device reset time (Idle/ Read/ Program/ Erase)
us
1
45
5/10/500
Notes: 1. ONFI Mode 5 compliant.
P/N: PM1975
REV. 1.1, MAY 04, 2015
60
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
8. OPERATION MODES: LOGIC AND COMMAND TABLES
Address input, command input and data input/output are managed by the CLE, ALE, CE#, WE#, RE# and
WP# signals, as shown in Table 14. Logic Table below.
Program, Erase, Read and Reset are four major operations modes controlled by command sets, please refer
to Table 15-1 and 15-2.
Table 14. Logic Table
Mode
CE#
RE#
Address Input (Read Mode)
L
Address Input (Write Mode)
WE#
CLE
ALE
WP#
H
L
H
X
L
H
L
H
H
Command Input (Read Mode)
L
H
H
L
X
Command Input (Write Mode)
L
H
H
L
H
Data Input
L
H
L
L
H
Data Output
L
H
L
L
X
During Read (Busy)
X
H
H
L
L
X
During Programming (Busy)
X
X
X
X
X
H
During Erasing (Busy)
X
X
X
X
X
H
Program/Erase Inhibit
X
X
X
X
X
L
Stand-by
H
X
X
X
X
0V/VCC
Notes:
1. H = VIH; L = VIL;
X = VIH or VIL
2. WP# should be biased to CMOS high or CMOS low for stand-by.
P/N: PM1975
REV. 1.1, MAY 04, 2015
61
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Table 15-1. HEX Command Table
Read Mode
Random Data Input
Random Data Output
ID Read
Parameter Page Read (ONFI)
Unique ID Read (ONFI)
Set Feature (ONFI)
Get Feature (ONFI)
Reset
Page Program
Cache Program
Block Erase
Status Read
Status Enhanced Read (ONFI)1
First Cycle
Second Cycle
00H
85H
05H
90H
ECH
EDH
EFH
EEH
FFH
80H
80H
60H
70H
78H
30H
E0H
10H
15H
D0H
-
Acceptable While Busy
V
V
V
Table 15-2. Two-plane Command Set (For 2Gb/4Gb)
Two-plane Program (ONFI)1
Two-plane Cache Program (ONFI)1
Two-plane Block Erase (ONFI)1
First Cycle
80H
80H
60H
Second Cycle
11H
11H
D1H
Third Cycle
80H
80H
60H
Fourth Cycle
10H
15H
D0H
Caution: None of the undefined command inputs can be accepted except for the command set in the above table.
Note 1: The command set is not valid for 1Gb.
P/N: PM1975
REV. 1.1, MAY 04, 2015
62
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
8-1. R/B#: Termination for The Ready/Busy# Pin (R/B#)
The R/B# is an open-drain output pin and a pull-up resistor is necessary to add on the R/B# pin. The R/B#
outputs the ready/busy status of read/program/ erase operation of the device. When the R/B# is at low, the
device is busy for read or program or erase operation. When the R/B# is at high, the read/program/erase
operation is finished.
Rp Value Guidence
The rise time of the R/B# signal depends on the combination of Rp and capacitive loading of the R/B# circuit.
It is approximately two times constants (Tc) between the 10% and 90% points on the R/B# waveform.
TC = R × C
Where R = Rp (Resistance of pull-up resistor), and C = CL (Total capacitive load)
The fall time of the R/B# signal majorly depends on the output impedance of the R/B# signal and the total
load capacitance.
Rp (Min.) =
Vcc (Max.) - VOL (Max.)
IOL+ΣIL
Notes:
1. Considering of the variation of device-by-device, the above data is for reference to decide the resistor value.
2. Rp maximum value depends on the maximum permissible limit of tr.
3. IL is the total sum of the input currents of all devices tied to the R/B pin.
P/N: PM1975
REV. 1.1, MAY 04, 2015
63
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 35. R/B# Pin Timing Information
@ Vcc = 3.3 V, Ta = 25°C, CL=100pF
Tc
800
800ns
600
400
400ns
200
2k
4k
6k
8k
Rp (ohm)
@ Vcc = 3.3 V, Ta = 25°C, CL=100pF
1.6
ibusy 1mA
0.83
0.4mA
0.55
0.41
2k
4k
6k
8k
Rp (ohm)
VCC
VCC
Device
Ready State
Rp
CL
R/B#
~90%
VCC
~90%
VOH
VOH
VOL
VOL
~10%
VSS
tf
P/N: PM1975
Busy State
~10%
tr
REV. 1.1, MAY 04, 2015
64
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
8-2. Power On/Off Sequence
After the Chip reaches the power on level (Vth = Vcc min.), the internal power on reset sequence will be
triggered. During the internal power on reset period, no any external command is accepted. There are two
ways to identify the termination of the internal power on reset sequence. Please refer to Figure 36. Power
On/Off Sequence.
•
R/B# pin
•
Wait 1 ms
During the power on and power off sequence, it is recommended to keep the WP# = Low for internal data
protection.
Figure 36. Power On/Off Sequence
Vcc min.
Vcc
WP#
WE#
1 ms (Max.)
100 us
R/B#
P/N: PM1975
REV. 1.1, MAY 04, 2015
65
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
8-2-1. WP# Signal
WP# going Low can cause program and erase operations automatically reset.
The enabling & disabling of the both operations are as below:
Figure 37-1. Enable Programming of WP# Signal
WE#
IO[7:0]
WP#
Figure 37-2. Disable Programming of WP# Signal
80h
10h
tWW
WE#
IO[7:0]
80h
10h
tWW
WP#
Figure 37-3. Enable Erasing of WP# Signal
WE#
IO[7:0]
WP#
Figure 37-4. Disable Erasing of WP# Signal
60h
D0h
tWW
WE#
IO[7:0]
60h
D0h
tWW
WP#
P/N: PM1975
REV. 1.1, MAY 04, 2015
66
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
9. SOFTWARE ALGORITHM
9-1. Invalid Blocks (Bad Blocks)
The bad blocks are included in the device while it gets shipped. During the time of using the device, the
additional bad blocks might be increasing; therefore, it is recommended to check the bad block marks
and avoid using the bad blocks. Furthermore, please read out the bad block information before any erase
operation since it may be cleared by any erase operation.
Figure 38. Bad Blocks
Bad Block
Bad Block
While the device is shipped, the value of all data bytes of the good blocks are FFh. The 1st bytes of the
1st and 2nd page in the spare area for bad block will be 00h. The erase operation at the bad blocks is not
recommended.
After the device is installed in the system, the bad block checking is recommended. The figure shows the brief
test flow by the system software managing the bad blocks while the bad blocks were found. When a block
gets damaged, it should not be used any more.
Due to the blocks are isolated from bit-line by the selected gate, the performance of good blocks will not be
impacted by bad ones.
Table 16. Valid Blocks
Valid (Good)
Block Number
Density
Min.
1Gb
Typ.
Max.
Unit
1004
1024
Block
2Gb
2008
2048
Block
4Gb
4016
4096
Block
P/N: PM1975
Remark
Block 0 is guaranteed to be good
(with internal ECC)
REV. 1.1, MAY 04, 2015
67
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
9-2. Bad Block Test Flow
Although the initial bad blocks are marked by the flash vendor, they could be inadvertently erased and
destroyed by a user that does not pay attention to them. To prevent this from occurring, it is necessary to
always know where any bad blocks are located. Continually checking for bad block markers during normal
use would be very time consuming, so it is highly recommended to initially locate all bad blocks and build a
bad block table and reference it during normal NAND flash use. This will prevent having the initial bad block
markers erased by an unexpected program or erase operation. Failure to keep track of bad blocks can be
fatal for the application. For example, if boot code is programmed into a bad block, a boot up failure may
occur. The following section shows the recommended flow for creating a bad block table.
Figure 39. Bad Block Test Flow
Start
Block No. = 0
Yes
(Note 1)
Read 00h
Check
Create (or Update) Bad Block Table
No
Block No. = Block No. + 1
(Note 2)
Block No. = 1023
No
Yes
End
Note
1. Read 00h check is at the 1st byte of the 1st and 2nd pages of the block spare area.
2. The Block No. = 1023 for 1Gb, 2047 for 2Gb, 4095 for 4Gb.
P/N: PM1975
REV. 1.1, MAY 04, 2015
68
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
9-3. Failure Phenomena for Read/Program/Erase Operations
The device may fail during a Read, Program or Erase operation. The following possible failure modes should
be considered when implementing a highly reliable system:
Table 17. Failure Modes
Failure Mode
Detection and Countermeasure
Sequence
Erase Failure
Status Read after Erase
Block Replacement
Programming Failure
Status Read after Program
Block Replacement
1
Read Failure
Read Failure
ECC
Note 1: The internal ECC is always enabled, the internal ECC will handle the Read failure.
P/N: PM1975
REV. 1.1, MAY 04, 2015
69
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
9-4. Program
It is feasible to reprogram the data into another page (Page B) when an error occurred in Page A by loading
from an external buffer. Then create a bad block table or by using another appropriate scheme to prevent
further system accesses to Page A.
Figure 40. Failure Modes
Program error occurs in Page A
Buffer
Memory
Block
Another good block
Page B
Figure 41. Program Flow Chart
Start
Command 80h
Program
Command
Flow
Set Address
Write Data
Write 10h
Read Status Register
No
SR[6] = 1 ?
(or R/B# = 1 ?)
Yes
* Program Error
No
SR[0] = 0 ?
Yes
Program Completed
9-5. Erase
To prevent future accesses to this bad block, it is feasible to create a table within the system or by using
another appropriate scheme when an error occurs in an Erase operation.
P/N: PM1975
REV. 1.1, MAY 04, 2015
70
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Figure 42. Erase Flow Chart
Start
Command 60h
Set Block Address
Command D0h
Read Status Register
No
SR[6] = 1 ?
(or R/B# = 1 ?)
Yes
No
SR[0] = 0 ?
* Erase Error
Yes
Erase Completed
*
The failed blocks will be identified and given errors
in status register bits for attempts on erasing them.
Figure 43. Read Flow Chart
Start
Command 00h
Set Address
Command 30h
Read Status Register
SR[6] = 1 ?
(or R/B# = 1 ?)
No
Yes
SR[0] = 0 ?
No
Reclaim the Error
Yes
SR[3] = 0 ?
No
Rewrite Recommended
Yes
Data Read out
P/N: PM1975
REV. 1.1, MAY 04, 2015
71
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
10. PACKAGE INFORMATION
P/N: PM1975
REV. 1.1, MAY 04, 2015
72
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Title: Package Outline for 63-VFBGA (9x11x1.0mm, Ball-pitch: 0.8mm, Ball-diameter: 0.45mm)
P/N: PM1975
REV. 1.1, MAY 04, 2015
73
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
11. REVISION HISTORY
Rev. No. Descriptions
0.00
1. Initial Released
PageDate
AllAPR/26/2013
0.01
1. Spec improvement: tPROG, tCBSY, tRCBSY, tERASE, VOH, VOL, P61~63
ICC0, ICC1, ICC2, ICC3, tRHW
2. Removed the ERE feature ALL
3. Removed the feature address of 01h, 80h, 81h, 91h ALL
4. Removed the two-plane read feature
ALL
5. Replacing the IST parameter with the ICC0 in DC Table
P61
6. Added P/E endurance typical 100K
P6, 42
7. Supplement of the rule from low to high address for page program P25
8. Added a note for Sequence of Page Cache Program P30
9. Added notes of parameter page for the CRC formula. P43
10. Correced typos for Two-plane program (ONFI) content & waveformsP51-53
11. Added a note for AC waveform of OTP protection operation P54
12. Adding more explanations on the two-plane operation P55
13. Removed tDR_ECC from AC Table
P59
14. Added a note for Bad Block Test Flow chart.
P67
15. Supplement the recommendation for bad block management P71
16. Removed Cache Read FeatureALL
JUN/23/2014
0.02
1. The default value of feature address 90h is 08h. P42, 45
JUN/26/2014
0.03
1. Added "Advanced Information" title to all pages (Originally only available on page 6)
ALL
SEP/11/2014
1.0
1. Removed the "Advanced Information" title as production version datasheet.
2. Corrected tALS timing waveform as ALE high till WE# high
3. Corrected waveform of OTP protection tWB timing from WE# high to busy
4. Added note1 of tCBSY for 2Gb/4Gb
5. Revised R/B# timing of Power-on as 100us
ALL
MAR/06/2015
P21,49
P49
P58
P64
6. Revised the bad block mark from non-FFh to 00h, P66,67
also revised the page of bad block mark from 1st or 2nd page
to 1st and 2nd page
7. Revised typical value of ICC1/ICC2 from 20mA to 15mA for 1Gb P57
8. Added 63-ball VFBGA for 1Gb specification.
P6,8,10,73
1.1
1. Removed the "Advanced information" from 1Gb BGA
P6,8
2. Supplemented "The internal ECC is disabled on the parameter P36,40
page and unique ID."
MAY/04/2015
P/N: PM1975
REV. 1.1, MAY 04, 2015
74
MX30LF1GE8AB
MX30LF2GE8AB
MX30LF4GE8AB
Except for customized products which have been expressly identified in the applicable agreement, Macronix's products
are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe
property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall
take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable
laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2013~2015. All rights reserved, including the trademarks and tradename
thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit,
eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix
vEE, Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if
any) are for identification purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD.
http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
P/N: PM1975
REV. 1.1, MAY 04, 2015
75