W29N02GV W29N02GV 2G-BIT 3.3V NAND FLASH

W29N02GV
W29N02GV
2G-BIT 3.3V
NAND FLASH MEMORY
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Release Date: January 26, 2015
– Revision A
W29N02GV
Table of Contents
1.
2.
GENERAL DESCRIPTION ........................................................................................................7
FEATURES ...............................................................................................................................7
3.
PACKAGE TYPES AND PIN CONFIGURATIONS.....................................................................8
3.1
Pin assignment 48-pin TSOP1(x8) ....................................................................................8
3.2
Pin assignment 63 ball VFBGA (x8) ..................................................................................9
3.3
Pin Descriptions ............................................................................................................. 10
4.
PIN DESCRITPIONS .............................................................................................................. 11
4.1
Chip Enable (#CE) ......................................................................................................... 11
4.2
Write Enable (#WE) ........................................................................................................ 11
4.3
Read Enable (#RE) ........................................................................................................ 11
4.4
Address Latch Enable (ALE)........................................................................................... 11
4.5
Command Latch Enable (CLE) ....................................................................................... 11
4.6
Write Protect (#WP) ....................................................................................................... 11
4.7
Ready/Busy (RY/#BY) .................................................................................................... 11
4.8
Input and Output (I/Ox) ................................................................................................... 11
5.
BLOCK DIAGRAM .................................................................................................................. 12
6.
MEMORY ARRAY ORGANIZATION ....................................................................................... 13
6.1
Array Organization (x8) .................................................................................................. 13
7.
MODE SELECTION TABLE .................................................................................................... 14
8.
9.
COMMAND TABLE ................................................................................................................. 15
DEVICE OPERATIONS........................................................................................................... 17
9.1
READ operation ............................................................................................................. 17
9.2
9.3
9.4
9.1.1
PAGE READ (00h-30h) ........................................................................................................ 17
9.1.2
CACHE READ OPERATIONS .............................................................................................. 17
9.1.3
TWO PLANE READ (00h-00h-30h) ...................................................................................... 21
9.1.4
RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 23
9.1.5
READ ID (90h) ...................................................................................................................... 25
9.1.6
READ PARAMETER PAGE (ECh) ....................................................................................... 26
9.1.7
READ STATUS (70h) ........................................................................................................... 28
9.1.8
READ STATUS ENHANCED (78h) ...................................................................................... 30
9.1.9
READ UNIQUE ID (EDh) ...................................................................................................... 31
PROGRAM operation ..................................................................................................... 32
9.2.1
PAGE PROGRAM (80h-10h) ................................................................................................ 32
9.2.2
SERIAL DATA INPUT (80h) ................................................................................................. 32
9.2.3
RANDOM DATA INPUT (85h) .............................................................................................. 33
9.2.4
CACHE PROGRAM (80h-15h) ............................................................................................. 33
9.2.5
TWO PLANE PAGE PROGRAM .......................................................................................... 35
COPY BACK operation ................................................................................................... 38
9.3.1
READ for COPY BACK (00h-35h) ........................................................................................ 38
9.3.2
PROGRAM for COPY BACK (85h-10h) ................................................................................ 38
9.3.3
TWO PLANE READ for COPY BACK ................................................................................... 39
9.3.4
TWO PLANE PROGRAM for COPY BACK .......................................................................... 39
BLOCK ERASE operation .............................................................................................. 43
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W29N02GV
9.4.1
BLOCK ERASE (60h-D0h) ................................................................................................... 43
9.4.2 TWO PLANE BLOCK ERASE .................................................................................................. 44
9.5
RESET operation ........................................................................................................... 45
9.5.1
9.6
9.7
9.8
9.9
RESET (FFh) ........................................................................................................................ 45
FEATURE OPERATION ................................................................................................. 46
9.6.1
GET FEATURES (EEh) ........................................................................................................ 49
9.6.2
SET FEATURES (EFh) ......................................................................................................... 50
ONE TIME PROGRAMMABLE (OTP) area..................................................................... 51
WRITE PROTECT .......................................................................................................... 52
BLOCK LOCK ................................................................................................................ 54
10.
ELECTRICAL CHARACTERISTICS ........................................................................................ 55
10.1 Absolute Maximum Ratings (3.3V) .................................................................................. 55
10.2 Operating Ranges (3.3V) ................................................................................................ 55
10.3 Device power-up timing .................................................................................................. 56
10.4 DC Electrical Characteristics (3.3V) ................................................................................ 57
10.5 AC Measurement Conditions (3.3V)................................................................................ 58
10.6 AC timing characteristics for Command, Address and Data Input (3.3V) ......................... 59
10.7 AC timing characteristics for Operation (3.3V) ................................................................ 60
10.8 Program and Erase Characteristics ................................................................................ 61
11.
TIMING DIAGRAMS................................................................................................................ 62
12.
INVALID BLOCK MANAGEMENT ........................................................................................... 72
12.1 Invalid blocks.................................................................................................................. 72
12.2 Initial invalid blocks ......................................................................................................... 72
12.3 Error in operation............................................................................................................ 73
12.4 Addressing in program operation .................................................................................... 74
13.
PACKAGE DIMENSIONS ....................................................................................................... 75
13.1 TSOP 48-pin 12x20 ........................................................................................................ 75
13.2 Fine-Pitch Ball Grid Array 63-ball .................................................................................... 76
14.
15.
ORDERING INFORMATION ................................................................................................... 77
VALID PART NUMBERS ......................................................................................................... 78
16.
REVISION HISTORY .............................................................................................................. 79
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W29N02GV
List of Tables
Table 3-1 Pin Descriptions ..................................................................................................................... 10
Table 6-1 Addressing ............................................................................................................................. 13
Table 7-1 Mode Selection ...................................................................................................................... 14
Table 8-1 Command Table ..................................................................................................................... 16
Table 9-1 Device ID and configuration codes for Address 00h ................................................................ 26
Table 9-2 ONFI identifying codes for Address 20h .................................................................................. 26
Table 9-3 Parameter Page Output Value ................................................................................................ 28
Table 9-4 Status Register Bit Definition………………………………………………………….......................29
Table 9-5 Features ................................................................................................................................. 46
Table 9-6 Feature Address 80h .............................................................................................................. 47
Table 9-7 Feature Address 81h .............................................................................................................. 48
Table 10-1 Absolute Maximum Ratings .................................................................................................. 55
Table 10-2 Operating Ranges…………………………………………………………………….......................55
Table 10-3 DC Electrical Characteristics ................................................................................................ 57
Table 10-4 AC Measurement Conditions ................................................................................................ 58
Table 10-5 AC timing characteristics for Command, Address and Data Input .......................................... 59
Table 10-6 AC timing characteristics for Operation……………………………………………….............…...60
Table 10-7 Program and Erase Characteristics ...................................................................................... 61
Table 12-1 Valid Block Number .............................................................................................................. 72
Table 12-2 Block failure ......................................................................................................................... 73
Table 15-1 Part Numbers for Industrial Temperature .............................................................................. 78
Table 16-1 History Table ........................................................................................................................ 79
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W29N02GV
List of Figures
Figure 3-1 Pin Assignment 48-pin TSOP1 (Package code S)....................................................................8
Figure 3-2 Pin Assignment 63-ball VFBGA (Package code B) ..................................................................9
Figure 5-1 NAND Flash Memory Block Diagram ..................................................................................... 12
Figure 6-1 Array Organization ................................................................................................................ 13
Figure 9-1 Page Read Operations .......................................................................................................... 17
Figure 9-2 Sequential Cache Read Operations....................................................................................... 19
Figure 9-3 Random Cache Read Operation ............................................................................................ 20
Figure 9-4 Last Address Cache Read Operation .................................................................................... 21
Figure 9-5 Two Plane Read Page (00h-00h-30h) Operation ................................................................... 22
Figure 9-6 Random Data Output ............................................................................................................ 23
Figure 9-7 Two Plane Random Data Read (06h-E0h) Operation............................................................. 24
Figure 9-8 Read ID ................................................................................................................................ 25
Figure 9-9 Read Parameter Page ........................................................................................................... 26
Figure 9-10 Read Status Operation ........................................................................................................ 29
Figure 9-11 Read Status Enhanced (78h) Operation .............................................................................. 30
Figure 9-12 Read Unique ID................................................................................................................... 31
Figure 9-13 Page Program ..................................................................................................................... 32
Figure 9-14 Random Data Input ............................................................................................................. 33
Figure 9-15 Cache Program Start........................................................................................................... 34
Figure 9-16 Cache Program End ............................................................................................................ 34
Figure 9-17 Two Plane Page Program ................................................................................................... 36
Figure 9-18 Two Plane Cache Program .................................................................................................. 37
Figure 9-19 Program for copy back Operation ........................................................................................ 40
Figure 9-20 Copy Back Operation with Random Data Input .................................................................... 40
Figure 9-21 Two Plane Copy Back ......................................................................................................... 41
Figure 9-22 Two Plane Copy Back with Random Data Input ................................................................... 41
Figure 9-23 Two Plane Program for copy back ....................................................................................... 42
Figure 9-24 Block Erase Operation......................................................................................................... 43
Figure 9-25 Two Plane Block Erase Operation ....................................................................................... 44
Figure 9-26 Reset Operation .................................................................................................................. 45
Figure 9-27 Get Feature Operation......................................................................................................... 49
Figure 9-28 Set Feature Operation ......................................................................................................... 50
Figure 9-29 Erase Enable ...................................................................................................................... 52
Figure 9-30 Erase Disable ...................................................................................................................... 52
Figure 9-31 Program Enable .................................................................................................................. 52
Figure 9-32 Program Disable ................................................................................................................. 53
Figure 9-33 Program for Copy Back Enable ........................................................................................... 53
Figure 9-34 Program for Copy Back Disable ........................................................................................... 53
Figure 10-1 Power ON/OFF sequence ................................................................................................... 56
Figure 11-1 Command Latch Cycle ........................................................................................................ 62
Figure 11-2 Address Latch Cycle ........................................................................................................... 62
Figure 11-3 Data Latch Cycle ................................................................................................................. 63
Figure 11-4 Serial Access Cycle after Read ........................................................................................... 63
Figure 11-5 Serial Access Cycle after Read (EDO) ................................................................................. 64
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Figure 11-6 Read Status Operation ........................................................................................................ 64
Figure 11-7 Page Read Operation .......................................................................................................... 65
Figure 11-8 #CE Don't Care Read Operation…… .......... ……………………………………………………...65
Figure 11-9 Random Data Output Operation .......................................................................................... 66
Figure 11-10 Cache Read Operation (1/2) .............................................................................................. 66
Figure 11-11 Cache Read Operation (2/2) .............................................................................................. 67
Figure 11-12 Read ID............................................................................................................................. 67
Figure 11-13 Page Program ................................................................................................................... 68
Figure 11-14 #CE Don't Care Page Program Operation.......................................................................... 68
Figure 11-15 Page Program with Random Data Input ............................................................................. 69
Figure 11-16 Copy Back.......... …………………………………………………………………………………...69
Figure 11-17 Cache Program ................................................................................................................. 70
Figure 11-18 Block Erase ....................................................................................................................... 70
Figure 11-19 Reset ................................................................................................................................ 71
Figure 12-1 flow chart of create initial invalid block table ......................................................................... 73
Figure 12-2 Bad block Replacement ....................................................................................................... 74
Figure 13-1 TSOP 48-PIN 12X20mm ..................................................................................................... 75
Figure 13-2 Fine-Pitch Ball Grid Array 63-Ball ........................................................................................ 76
Figure 14-1 Ordering Part Number Description ....................................................................................... 77
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W29N02GV
1. GENERAL DESCRIPTION
The W29N02GV (2G-bit) NAND Flash memory provides a storage solution for embedded systems with
limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing
media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power
supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.
The memory array totals 276,824,064bytes, and organized into 2,048 erasable blocks of 135,168 bytes.
Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes
for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for
error management functions).
The W29N02GV supports the standard NAND flash memory interface using the multiplexed 8-bit bus to
transfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and
#WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect)
and the RY/#BY (Ready/Busy) for monitoring the device status.
2. FEATURES
• Basic Features
– Density : 2Gbit (Single chip solution)
– Vcc : 2.7V to 3.6V
– Bus width : x8
– Operating temperature
Industrial: -40°C to 85°C
• Single-Level Cell (SLC) technology.
• Organization
– Density: 2G-bit/256M-byte
– Page size
2,112 bytes (2048 + 64 bytes)
– Block size
64 pages (128K + 4K bytes)
• Highest Performance
– Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
– Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
– Endurance 100,000 Erase/Program
Cycles(2)
– 10-years data retention
• Command set
– Standard NAND command set
– Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
– Contact Winbond for OTP feature
– Contact Winbond for block Lock feature
• Lowest power consumption
– Read: 25mA(typ.3V)
– Program/Erase: 25mA(typ.3V)
– CMOS standby: 10uA(typ.)
• Space Efficient Packaging
– 48-pin standard TSOP1
– 63-ball VFBGA
– Contact Winbond for stacked
packages/KGD
Note:
1.
Endurance specification is based on 1bit/528 byte ECC (Error Correcting Code).
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W29N02GV
3. PACKAGE TYPES AND PIN CONFIGURATIONS
W29N02GV is offered in a 48-pin TSOP1 package (Code S) and 63-ball VFBGA package (Code B)
as shown in Figure 3-1 to 3-3, respectively. Package diagrams and dimensions are illustrated in
Section: Package Dimensions.
3.1 Pin assignment 48-pin TSOP1(x8)
Figure 3-1 Pin Assignment 48-pin TSOP1 (Package code S)
Note:
1.
These pins might not be connected in the package. Winbond recommends connecting these pins to the
designed external sources for ONFI compatibility.
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W29N02GV
3.2
Pin assignment 63 ball VFBGA (x8)
Top View, ball down
1
2
A
N.C
N.C
B
N.C
3
4
5
6
7
8
C
#WP
ALE
Vss
#CE
#WE
RY/#BY
D
N.C
#RE
CLE
N.C
N.C
N.C
E
N.C
N.C
N.C
N.C
N.C
N.C
F
N.C
N.C
N.C
N.C
N.C
N.C
G
DNU
N.C
DNU
N.C
N.C
N.C
H
N.C
IO0
N.C
N.C
N.C
Vcc
J
N.C
IO1
N.C
Vcc
IO5
IO7
K
Vss
IO2
IO3
IO4
IO6
Vss
9
10
N.C
N.C
N.C
N.C
L
N.C
N.C
N.C
N.C
M
N.C
N.C
N.C
N.C
Figure 3-2 Pin Assignment 63-ball VFBGA (Package code B)
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3.3
Pin Descriptions
PIN NAME
I/O
FUNCTION
#WP
I
Write Protect
ALE
I
Address Latch Enable
#CE
I
Chip Enable
#WE
I
Write Enable
RY/#BY
O
Ready/Busy
#RE
I
Read Enable
CLE
I
Command Latch Enable
I/O[0-7]
I/O
Vcc
Supply
Power supply
Vss
Supply
Ground
DNU
-
Do Not Use: This pins are unconnected pins.
N.C
-
No Connect
Data Input/Output (x8)
Table 3-1 Pin Descriptions
Note:
1.
Connect all Vcc and Vss pins to power supply or ground. Do not leave Vcc or Vss disconnected.
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4. PIN DESCRITPIONS
4.1 Chip Enable (#CE)
#CE pin enables and disables device operation. When #CE is high the device is disabled and the I/O
pins are set to high impedance and enters into standby mode if not busy. When #CE is set low the
device will be enabled, power consumption will increase to active levels and the device is ready for
Read and Write operations.
4.2 Write Enable (#WE)
#WE pin enables the device to control write operations to input pins of the device. Such as, command
instructions, addresses and data that are latched on the rising edge of #WE.
4.3 Read Enable (#RE)
#RE pin controls serial data output from the pre-loaded Data Register. Valid data is present on the
I/O bus after the tREA period from the falling edge of #RE. Column addresses are incremented for
each #RE pulse.
4.4
Address Latch Enable (ALE)
ALE pin controls address input to the address register of the device. When ALE is active high,
addresses are latched via the I/O pins on the rising edge of #WE.
4.5 Command Latch Enable (CLE)
CLE pin controls command input to the command register of the device. When CLE is active high,
commands are latched into the command register via I/O pins on the rising edge of #WE.
4.6 Write Protect (#WP)
#WP pin can be used to prevent the inadvertent program/erase to the device. When #WP pin is active
low, all program/erase operations are disabled.
4.7 Ready/Busy (RY/#BY)
RY/#BY pin indicates the device status. When RY/#BY output is low, it indicates that the device is
processing either a program, erase or read operations. When it returns to high, those operations have
completed. RY/#BY pin is an open drain.
4.8 Input and Output (I/Ox)
I/Ox bi-directional pins are used for the following; command, address and data operations.
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5. BLOCK DIAGRAM
Figure 5-1 NAND Flash Memory Block Diagram
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6.
MEMORY ARRAY ORGANIZATION
6.1
Array Organization (x8)
2112 bytes
2112 bytes
DQ7
Cache Register
2048
64
2048
64
Data Register
2048
64
2048
64
DQ0
1page = (2k+64bytes)
1block = (2k+64）bytes?64 pages
= (128k+4k)byte
1plane = (128k+4k)byte?1024blocks
= 1056Mb
1device = 1056M ?2planes
= 2112Mb
1024
blocks
Per plane
1 block
1 block
2048
blocks
Per device
Plane of even
numbered blocks
Plane of- odd
numbered blocks
Figure 6-1 Array Organization
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1 cycle
A7
A6
A5
A4
A3
A2
A1
A0
2nd cycle
L
L
L
L
A11
A10
A9
A8
3rd cycle
st
A19
A18
A17
A16
A15
A14
A13
A12
th
A27
A26
A25
A24
A23
A22
A21
A20
th
L
L
L
L
L
L
L
A28
4 cycle
5 cycle
Table 6-1 Addressing
Notes:
1.
“L” indicates a low condition, which must be held during the address cycle to insure correct processing.
2.
A0 to A11 during the 1st and 2nd cycles are column addresses. A12 to A28 during the 3rd, 4th and 5th cycles
are row addresses.
3.
A18 is plane address
4.
The device ignores any additional address inputs that exceed the device’s requirement.
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W29N02GV
7. MODE SELECTION TABLE
MODE
CLE
ALE
#CE
#WE
#RE
#WP
Read
mode
Command input
H
L
L
H
X
Address input
L
H
L
H
X
Program
Command input
H
L
L
H
H
Erase
mode
Address input
L
H
L
H
H
Data input
L
L
L
H
H
Sequential Read and Data output
L
L
L
H
During read (busy)
X
X
X
X
H
X
During program (busy)
X
X
X
X
X
H
During erase (busy)
X
X
X
X
X
H
Write protect
X
X
X
X
X
L
Standby
X
X
H
X
X
0V/Vcc
X
Table 7-1 Mode Selection
Notes:
1.
“H” indicates a HIGH input level, “L” indicates a LOW input level, and “X” indicates a Don’t Care Level.
2.
#WP should be biased to CMOS HIGH or LOW for standby.
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W29N02GV
8. COMMAND TABLE
1ST
CYCLE
2ND
CYCLE
PAGE READ
00h
30h
READ for COPY BACK
00h
35h
SEQUENTIAL CACHE READ
31h
RANDOM CACHE READ
00h
LAST ADDRESS CACHE READ
3Fh
READ ID
90h
READ STATUS
70h
Yes
RESET
FFh
Yes
PAGE PROGRAM
80h
10h
PROGRAM for COPY BACK
85h
10h
CACHE PROGRAM
80h
15h
BLOCK ERASE
60h
D0h
RANDOM DATA INPUT*1
85h
RANDOM DATA OUTPUT*1
05h
READ PARAMETER PAGE
ECh
READ UNIQUE ID
EDh
GET FEATURES
EEh
SET FEATURES
EFh
READ STATUS ENHANCED
78h
TWO PLANE READ PAGE
00h
00h
30h
TWO PLANE READ FOR COPY BACK
00h
00h
35h
TWO PLANE RANDOM DATA
06h
E0h
TWO PLANE PROGRAM(TRADITIONAL)
80h
11h
81h
10h
TWO PLANE PROGRAM(ONFI)
80h
11h
80h
10h
TWO
PLANE
CACHE
PROGRAM(START/CONTINUE)(TRADITIONAL)
80h
11h
81h
15h
TWO
PLANE
CACHE
PROGRAM(START/CONTINUE) (ONFI)
80h
11h
80h
15h
TWO
PLANE
PROGRAM(END)(TRADITIONAL)
80h
11h
81h
10h
TWO PLANE CACHE PROGRAM(END)(ONFI)
80h
11h
80h
10h
TWO
PLANE
PROGRAM
BACK(TRADITIONAL)
FOR
COPY
85h
11h
81h
10h
TWO
PLANE
BACK(ONFI)
FOR
COPY
85h
11h
85h
10h
COMMAND
PROGRAM
READ
CACHE
15
3rd
CYCLE
4th
CYCLE
Acceptable
during
busy
31h
E0h
Yes
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W29N02GV
TWO PLANE BLOCK ERASE(TRADITIONAL)
60h
60h
D0h
TWO PLANE BLOCK ERASE(ONFI)
60h
D1h
60h
D0h
Table 8-1 Command Table
Notes:
1.
RANDOM DATA INPUT and RANDOM DATA OUTPUT command is only to be used within a page.
2.
Any commands that are not in the above table are considered as undefined and are prohibited as inputs.
3.
Do not cross plane address boundaries when using Copy Back Read and Program for copy back.
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W29N02GV
9. DEVICE OPERATIONS
9.1 READ operation
9.1.1 PAGE READ (00h-30h)
When the device powers on, 00h command is latched to command register. Therefore, system only
issues five address cycles and 30h command for initial read from the device. This operation can also
be entered by writing 00h command to the command register, and then write five address cycles,
followed by writing 30h command. After writing 30h command, the data is transferred from NAND
array to Data Register during tR. Data transfer progress can be done by monitoring the status of the
RY/#BY signal output. RY/#BY signal will be LOW during data transfer. Also, there is an alternate
method by using the READ STATUS (70h) command. If the READ STATUS command is issued
during read operation, the Read (00h) command must be re-issued to read out the data from Data
Register. When the data transfer is complete, RY/#BY signal goes HIGH, and the data can be read
from Data Register by toggling #RE. Read is sequential from initial column address to the end of the
page. (See Figure 9-1)
CLE
#CE
#WE
ALE
#RE
l/Ox
00h
Data Output ( Serial Access )
30h
Address (5cycles)
tR
RY/#BY
Don’t care
Figure 9-1 Page Read Operations
9.1.2 CACHE READ OPERATIONS
To obtain a higher degree of performance read operations, the device’s Cache and Data Register
can be used independent of each other. Data can be read out from the Cache Register, while array
data is transferred from the NAND Array to the Data Register.
The CACHE READ mode starts with issuing a PAGE READ command (00h-30h) to transfer a page
of data from NAND array to the Cache Register. RY/#BY signal will go LOW during data transfer
indicating a busy status. Copying the next page of data from the NAND array to the Data Register
while making the Cache Register page data available is done by issuing either a SEQUENTIAL
CACHE READ (31h) or RANDOM CACHE READ (00h-31h) command. The SEQUENTIAL CACHE
READ mode will copy the next page of data in sequence from the NAND array to the Data Register
or use the RANDOM CACHE READ mode (00h-31h) to copy a random page of data from NAND
array to the Data Register. The RY/#BY signal goes LOW for a period of tRCBSY during the page
data transfer from NAND array to the Data Register. When RY/#BY goes HIGH, this means that the
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Cache Register data is available and can be read out of the Cache Register by with toggling #RE,
which starts at address column 0. If it is desired to start at a different column address, a RANDOM
DATA OUTPUT (05h-E0h) command can be used to change the column address to read out the
data.
At this point in the procedure when completing the read of the desired number of bytes, one of two
things can be chosen. Continue CACHE READ (31h or 00h-31h) operations or end the CACHE READ
mode with a LAST ADDRESS CACHE READ (3Fh) command.
To continue with the read operations, execute the CACHE READ (31h or 00h-31h) command. The
RY/#BY signal goes LOW for the period of tRCBSY while data is copied from Data Register to the
Cache Register and the next page of data starts being copied from the NAND array to the Data
Register. When RY/#BY signal goes HIGH signifying that the Cache Register data is available, at this
time #RE can start toggling to output the desired data starting at column 0 address or using the
RANDOM DATA OUPUT command for random column address access.
To terminate the CACHE READ operations a LAST ADDRESS CACHE READ (3Fh) command is
issued, RY/#BY signal goes LOW and the Data Register contents is copied to the Cache Register.
At the completion of the Data Register to Cache Register transfer, RY/#BY goes HIGH indicating data
is available at the output of the Cache Register. At this point Data can be read by toggling #RE starting
at column address 0 or using the RANDOM DATA OUPUT command for random column address
access. The device NAND array is ready for next command set.
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9.1.2.1. SEQUENTIAL CACHE READ (31h)
The SEQUENTIAL CACHE READ (31h) copies the next page of data in sequence within block to the
Data Register while the previous page of data in the Cache Register is available for output. This is
done by issuing the command (31h), RY/#BY signal goes LOW and the STATUS REGISTER bits 6
and 5 = “00” for the period of tRCBSY. When RY/#BY signal goes HIGH and STATUS REGISTER
bits 6 and 5 = “10”, data at the Cache Register is available. The data can be read out from the Cache
Register by toggling #RE, starting address is column 0 or by using the RANDOM DATA OUTPUT
command for random column address access.
CLE
#CE
#WE
ALE
#RE
I/Ox
00h
Address(5cycles)
30h
31h
tR
Data Output (Serial Access)
tRCBSY
31h
Data output (Serial Access)
tRCBSY
RY/#BY
Don’t care
Figure 9-2 Sequential Cache Read Operations
9.1.2.2. RANDOM CACHE READ (00h-31h)
The RANDOM CACHE READ (00h-31h) will copy a particular page from NAND array to the Data
Register while the previous page of data is available at the Cache Register output. Perform this
function by first issuing the 00h command to the Command Register, then writing the five address
cycles for the desired page of data to the Address Register. Then write the 31h command to the
Command Register. Note; the column address bits are ignored.
After the RANDOM CACHE READ command is issued, RY/#BY signal goes LOW and STATUS
REGISTER bits 6 and 5 equal “00” for the period of tRCBSY. When RY/#BY signal goes HIGH and
STATUS REGISTER bits 6 and 5 equal “10”, the page data in the Cache Register is available. The
data can read out from the Cache Register by toggling #RE, the starting column address will be 0 or
use the RANDOM DATA OUTPUT (05h-E0h) command change the column address to start reading
out the data.
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CLE
#CE
#WE
ALE
#RE
I/Ox
00h
Page L
Address(5cycles)
30h
00h
Page M
Address(5cycles)
tR
00h
31h
tRCBSY
Page N
Address(5cycles)
Page L
DataOut
31h
Page M
DataOut
tRCBSY
RY/#BY
Don’t care
Figure 9-3 Random Cache Read Operation
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9.1.2.3. LAST ADDRESS CACHE READ (3Fh)
The LAST ADDRESS CACHE READ (3Fh) copies a page of data from the Data Register to the Cache
Register without starting the another cache read. After writing the 3Fh command, RY/#BY signal goes
LOW and STATUS REGISTER bits 6 and 5 equals “00” for the period of tRCBSY. When RY/#BY
signal goes HIGH and STATUS REGISTER bits 6 and 5 equals “11”, the Cache Register data is
available, and the device NAND array is in ready state. The data can read out from the Cache Register
by toggling #RE, starting at address column 0 or us RANDOM DATA OUTPUT (05h-E0h) command
to change the column address to read out the data.
CLE
#CE
#WE
ALE
l/Ox
Page N
DataOutput
31h
Address(5cycles)
3Fh
Page N DataOut
(Serial Access)
#RE
tRCBSY
tRCBSY
RY/#BY
Don’t care
Figure 9-4 Last Address Cache Read Operation
9.1.3 TWO PLANE READ (00h-00h-30h)
TWO PLANE READ (00h-00h-30h) transfers two pages data from the NAND array to the data
registers. Each page address have to be indicated different plane address.
To set the TWO PLANE READ mode, write the 00h command to the command register, and then
write five address cycles for plane 0. Secondly, write the 00h command to the command register, and
five address cycles for plane 1. Finally, the 30h command is issued. The first-plane and second-plane
addresses must be identical for all of issued address except plane address.
After the 30h command is written, page data is transferred from both planes to their respective data
registers in tR. RY/#BY goes LOW While these are transfered,. When the transfers are complete,
RY/#BY goes HIGH. To read out the data, at first, system writes TWO PLANE RAMDOM DATA READ
(06h-E0h) command to select a plane, next, repeatedly pulse #RE to read out the data from selected
plane. To change the plane address, issues TWO PLANE RANDOM DATA READ (06h-E0h)
command to select the another plane address, then repeatedly pulse #RE to read out the data from
the selected plane data register.
Alternatively, data transfers can be monitored by the READ STATUS (70h). When the transfers are
complete, status register bit 6 is set to 1. To read data from the first of the two planes even when
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READ STATUS ENHANCED (78h) command is used, the system must issue the TWO PLANE
RANDOM DATA READ (06h-E0h) command at first and pulse #RE repeatedly.
Write a TWO PLANE RANDOM DATA READ (06h-E0h) command to select the other plane ,after the
data cycle is complete. pulse #RE repeatedly to output the data beginning at the specified column
address,
During TWO PLANE READ operation,the READ STATUS ENHANCED (78h) command is prohibited .
CLE
#WE
ALE
#RE
Plane address M
Plane address M
I/O×
00h
Col
Add1
Col
Add2
Column address J
Row
Add1
Row
Add2
Row
Add3
Col
Add1
00h
Plane 0 address
Col
Add2
Column address J
Row
Add1
Row
Add2
Row
Add3
30h
Plane 1 address
tR
RY/#BY
1
CLE
#WE
ALE
#RE
I/O×
06h
Address (5cycles)
Plane 0 or Plane 1 address
E0h
DOUT0 DOUT1
DOUTn
Selected Plane data
RY/#BY
1
Figure 9-5 Two Plane Read Page (00h-00h-30h) Operation
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9.1.4 RANDOM DATA OUTPUT (05h-E0h)
The RANDOM DATA OUTPUT allows the selection of random column addresses to read out data
from a single or multiple of addresses. The use of the RANDOM DATA OUTPUT command is
available after the PAGE READ (00h-30h) sequence by writing the 05h command following by the
two cycle column address and then the E0h command. Toggling #RE will output data sequentially.
The RANDOM DATA OUTPUT command can be issued multiple times, but limited to the current
loaded page.
tR
RY/#BY
#RE
I/Ox
00h
Address(5cycles)
30h
Data out
05h
Address(2cycles)
E0h
Data out
Figure 9-6 Random Data Output
9.1.4.1. TWO PLANE RANDOM DATA OUTPUT (06h-E0h)
TWO PLANE RANDOM DATA READ (06h-E0h) command can indicate to specified plane and
column address on cache register . This command is accepted by a device when it is ready.
Issuing 06h to the command register, two column address cycles, three row address cycles, E0h are
followed, this enables data output mode on the address device’s cache register at the specified
column address. After the E0h command , the host have to wait at least tWHR before requesting data
output. The selected device is in data output mode until another valid command is issued.
The TWO PLANE RANDOM DATA READ (06h-E0h) command is used to select the cache register
to be enabled for data output. When the data output is complete on the selected plane, the
command can be issued again to start data output on another plane.
If there is a need to update the column address without selecting a new cache register, the RANDOM
DATA READ (05h-E0h) command can be used instead.
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CLE
#CE
#WE
ALE
#RE
I/O×
Data Out
06h
Address (5cycles)
E0h
Data Out
Figure 9-7 Two Plane Random Data Read (06h-E0h) Operation
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9.1.5 READ ID (90h)
READ ID command is comprised of two modes determined by the input address, device (00h) or
ONFI (20h) identification information. To enter the READ ID mode, write 90h to the Command
Register followed by a 00h address cycle, then toggle #RE for 5 single byte cycles, W29N02GV. The
pre-programmed code includes the Manufacturer ID, Device ID, and Product-Specific Information
(see Table 9.1). If the READ ID command is followed by 20h address, the output code includes 4
single byte cycles of ONFI identifying information (See Table 9.2). The device remains in the READ
ID Mode until the next valid command is issued.
CLE
#CE
#WE
tAR
ALE
#RE
I/Ox
tWHR
90h
tREA
Byte0
00h
Byte1
Byte2
Byte3
Byte4
(or 20h)
Address 1 Cycle
Figure 9-8 Read ID
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# of
Byte/Cycles
1st
Byte/Cycle
2nd
Byte/Cycle
3rd
Byte/Cycle
4th
Byte/Cycle
5th
Byte/Cycle
W29N02GV
EFh
DAh
90h
95h
04h
Device ID
Cache
Programming
Supported
Page Size:2KB
Spare Area Size:64b
BLK Size w/o Spare:128KB
Organized:x8 or x16
Serial Access:25ns
Description
MFR ID
x16 device : the ID is outputted at word units, and defined lower-byte (IO0-7). ID table shows only lower-byte ID.
Table 9-1 Device ID and configuration codes for Address 00h
# of Byte/Cycles
1st
Byte/Cycle
2nd
Byte/Cycle
3rd
Byte/Cycle
4th
Byte/Cycle
Code
4Fh
4Eh
46h
49h
Table 9-2 ONFI identifying codes for Address 20h
9.1.6 READ PARAMETER PAGE (ECh)
READ PARAMETER PAGE can read out the device’s parameter data structure, such as,
manufacturer information, device organization, timing parameters, key features, and other pertinent
device parameters. The data structure is stored with at least three copies in the device’s parameter
page. Figure 9-9 shows the READ PARAMETER PAGE timing. The RANDOM DATA OUTPUT (05hE0h) command is supported during data output.
Figure 9-8 Read Parameter Page
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Byte
Description
Value
0-3
Parameter page signature
4Fh, 4Eh, 46h, 49h
4-5
Revision number
02h, 00h
6-7
Features supported
18h,00h
8-9
Optional commands supported
3Fh,00h
10-31
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h
32-43
Device manufacturer
57h, 49h, 4Eh, 42h, 4Fh, 4Eh, 44h, 20h, 20h, 20h, 20h,
20h
44-63
Device model
64
W29N02GV
57h,32h,39h,4Eh,30h,32h,47h,56h,20h,20h,20h,20h,20
h,20h,20h,20h,20h,20h,20h,20h,20h
Manufacturer ID
EFh
65-66
Date code
00h, 00h
67-79
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
80-83
# of data bytes per page
00h, 08h, 00h, 00h
84-85
# of spare bytes per page
40h, 00h
86-89
# of data bytes per partial page
00h, 02h, 00h, 00h
90-91
# of spare bytes per partial page
10h, 00h
92-95
# of pages per block
40h, 00h, 00h, 00h
96-99
# of blocks per unit
00h, 08h, 00h, 00h
100
# of logical units
01h
101
# of address cycles
23h
102
# of bits per cell
01h
103-104
Bad blocks maximum per unit
28h, 00h
105-106
Block endurance
01h, 05h
107
Guaranteed valid blocks at beginning
of target
01h
108-109
Block endurance for guaranteed valid
blocks
00h, 00h
110
# of programs per page
04h
111
Partial programming attributes
00h
112
# of ECC bits
01h
113
# of interleaved address bits
01h
114
Interleaved operation attributes
0Ch
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
115-127
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Byte
128
Description
Value
I/O pin capacitance
0Ah
129-130
Timing mode support
1Fh, 00h
131-132
Program cache timing
1Fh, 00h
133-134
Maximum page program time
BCh, 02h
135-136
Maximum block erase time
10h, 27h
137-138
Maximum random read time
19h, 00h
139-140
tCCS minimum
46h, 00h
141-163
Reserved
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h
164-165
Vendor specific revision #
01h,00h
166-253
Vendor specific
00h
254-255
Integrity CRC
Set at shipment
256-511
Value of bytes 0-255
512-767
Value of bytes 0-255
>767
Additional redundant parameter pages
x16 device : the ID is outputted at word units, and defined lower-byte (IO0-7). ID table shows only lower-byte ID.
Table 9-3 Parameter Page Output Value
9.1.7 READ STATUS (70h)
The W29N02GV has an 8-bit Status Register which can be read during device operation. Refer to
Table 9.3 for specific Status Register definitions. After writing 70h command to the Command
Register, read cycles will only read from the Status Register. The status can be read from I/O[7:0]
outputs, as long as #CE and #RE are LOW. Note; #RE does not need to be toggled for Status Register
read. The Command Register remains in status read mode until another command is issued. To
change to normal read mode, issue the PAGE READ (00h) command. After the PAGE READ
command is issued, data output starts from the initial column address.
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#CE
tCLR
CLE
tREA
#WE
#RE
Status Output
70h
I/Ox
Figure 9-9 Read Status Operation
SR bit
I/O 0
Page Read
Cache Read
Page Program
Cache
Program
Block Erase
Definition
0=Successful
Program/Erase
Not Use
Not Use
Pass/Fail
Pass/Fail(N)
Pass/Fail
1=Error
in Program/Erase
I/O 1
Not Use
Not Use
Not Use
Pass/Fail(N-1)
Not Use
0=Successful
Program
1=Error in Program
I/O 2
Not Use
Not Use
Not Use
Not Use
Not Use
0
I/O 3
Not Use
Not Use
Not Use
Not Use
Not Use
0
I/O 4
Not Use
Not Use
Not Use
Not Use
Not Use
0
I/O 5
Ready/Busy
Ready/Busy1
Ready/Busy
Ready/Busy
Ready/Busy
I/O 6
Ready/Busy
Cache
Ready/Busy2
Ready/Busy
Cache
Ready/Busy
Ready/Busy
I/O 7
Write Protect
Write Protect
Write Protect
Write Protect
Write Protect
Ready = 1
Busy = 0
Ready = 1
Busy = 0
Unprotected = 1
Protected = 0
Table 9-4 Status Register Bit Definition
Notes:
1.
SR bit 5 is 0 during the actual programming operation. If cache mode is used, this bit will be 1 when all
internal operations are complete.
2.
SR bit 6 is 1 when the Cache Register is ready to accept new data. RY/#BY follows bit 6.
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9.1.8 READ STATUS ENHANCED (78h)
The READ STATUS ENHANCED (78h) command returns the status of the addressed plane on a
target even when it is busy (SR BIT 6 = 0).
Writing 78h to the command register, followed by three row address cycles containing the page, plane
and block addresses that is same as executed addresses, puts the device into read status mode. The
device stays in this mode until another valid command is issued
The device status is returned when the host requests data output. The SR BIT 6 and SR bit 5 bits of
the status register are shared for all planes on the device. The SR BIT 1 and SR BIT 0 (SR bit0) bits
are specific to the plane specified in the row address.
The READ STATUS ENHANCED (78h) command also enables the device for data output. To begin
data output following a READ operation after the device is ready (SR BIT 6 = 1), issue the READ
MODE (00h) command, then begin data output. If the host needs to change the cache register that
will output data, use the TWO PLANE RANDOMDATA READ (06h-E0h) command after the device
is ready
Use of the READ STATUS ENHANCED (78h) command is prohibited when OTP mode is enabled. It
is also prohibited following some of the other reset, identification.
CLE
#CE
#WE
ALE
#RE
I/O?
78h
Address (3cycles)
Status Output
Figure 9-10 Read Status Enhanced (78h) Operation
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9.1.9 READ UNIQUE ID (EDh)
The W29N02GV NAND Flash device has a method to uniquely identify each NAND Flash device by
using the READ UNIQUE ID command. The format of the ID is limitless, but the ID for every NAND
Flash device manufactured, will be guaranteed to be unique.
Numerous NAND controllers typically use proprietary error correction code (ECC) schemes. In these
cases Winbond cannot protect unique ID data with factory programmed ECC. However, to ensure
data reliability, Winbond will program the NAND Flash devices with 16 bytes of unique ID code,
starting at byte 0 on the page, immediately followed by 16 bytes of the complement of that unique ID.
The combination of these two actions is then repeated 16 times. This means the final copy of the
unique ID will resides at location byte 511. At this point an XOR or exclusive operation can be
performed on the first copy of the unique ID and its complement. If the unique ID is good, the results
should yield all the bits as 1s. In the event that any of the bits are 0 after the XOR operation, the
procedure can be repeated on a subsequent copy of the unique ID data.
CLE
#WE
ALE
#RE
I/Ox
EDh
00h
Byte0
Byte1
Byte14
Byte15
Unique ID data
tR
RY/#BY
Figure 9-11 Read Unique ID
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9.2 PROGRAM operation
9.2.1 PAGE PROGRAM (80h-10h)
The W29N02GV Page Program command will program pages sequentially within a block, from the
lower order page address to higher order page address. Programming pages out of sequence is
prohibited. The W29N02GV supports partial-page programming operations up to 4 times before an
erase is required if partitioning a page. Note; programming a single bit more than once without first
erasing it is not supported.
9.2.2 SERIAL DATA INPUT (80h)
Page Program operation starts with the execution of the Serial Data Input command (80h) to the
Command Register, following next by inputting five address cycles and then the data is loaded. Serial
data is loaded to Cache Register with each #WE cycle. The Program command (10h) is written to the
Command Register after the serial data input is finished. At this time the internal write state controller
automatically executes the algorithms for program and verifies operations. Once the programming
starts, determining the completion of the program process can be done by monitoring the RY/#BY
output or the Status Register Bit 6, which will follow the RY/#BY signal. RY/#BY will stay LOW during
the internal array programming operation during the period of (tPROG). During page program
operation, only two commands are available, READ STATUS (70h) and RESET (FFh). When the
device status goes to the ready state, Status Register Bit 0 (I/O0) indicates whether the program
operation passed (Bit0=0) or failed (Bit0=1), (see Figure 9-13). The Command Register remains in
read status mode until the next command is issued.
tPROG
RY/#BY
I/Ox
80h
Address (5cycles)
Din
10h
70h
Status
I/O0=0pass
I/O0=1fail
Figure 9-12 Page Program
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9.2.3 RANDOM DATA INPUT (85h)
After the Page Program (80h) execution of the initial data has been loaded into the Cache Register,
if the need for additional writing of data is required, using the RANDOM DATA INPUT (85h) command
can perform this function to a new column address prior to the Program (10h) command. The
RANDOM DATA INPUT command can be issued multiple times in the same page (See Figure 9-14).
CLE
#CE
#WE
ALE
#RE
tPROG
RY/#BY
I/Ox
80h
Address (5cycles)
Din
85h
Address
(2cycles)
Din
10h
70h
Status
Don’t care
Figure 9-13 Random Data Input
9.2.4 CACHE PROGRAM (80h-15h)
CACHE PROGEAM (80h) command is started by writing the command to the Command Register.
The next writes should be five cycles of address, and then either writing a full or partial page of input
data into the Cache Register. Issuing the CACHE PROGRAM (15h) command to the Command
Register, starting transferring data from the Cache Register to the Data Register on the rising edge
of #WE and RY/#BY will go LOW. Programming to the array starts after the data has been copied
into the Data Register and RY/#BY returns to HIGH.
When RY/#BY returns to HIGH, the next input data can be written to the Cache Register by issuing
another CACHE PROGRAM command series. The time RY/#BY goes LOW, is typical controlled by
the actual programming time. The time for the first programming pass equals the time it takes to
transfer the data from the Cache Register to the Data Register. On the second and subsequent
programming passes, data transfer from the Cache Register to the Data Register is held until Data
Register content is programming into the NAND array.
The CACHE PROGRAM command can cross block address boundaries. RANDOM DATA INPUT
(85h) commands are permitted with CACHE PROGRAM operations. Status Register’s Cache
RY/#BY (Bit 6 or I/O6) can be read after issuing the READ STATUS (70h) command for confirming
when the Cache Register is ready or busy. RY/#BY, always follows Status Register Bit 6 (I/O6). Status
Register’s RY/#BY Bit 5 (I/O5) can be polled to determine whether the array programming is in
progress or completed for the current programming cycle.
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If only RY/#BY is used for detecting programming status, the last page of the program sequence must
use the PAGE PROGRAM (10h) command instead of the CACHE PROGRAM (15h) command. If the
CACHE PROGRAM (15h) command is used every time, including the last page programming, Status
Register’s Bit 5 (I/O5) must be used to determine when programming is complete.
Status Register’s Pass/Fail, Bit 1 (I/O1) returns the pass/fail status for the previous page when Status
Register’s Bit 6 (I/O6) equals a “1” (ready state). The pass/fail status of the current PROGRAM
operation is returned with Status Register’s Bit 0 (I/O0) when Bit 5 (I/O5) of the Status Register equals
a “1” (ready state) as shown in Figure 9-15 and 9-16.
Note: The CACHE PROGRAM command cannot be used on blocks 0-3 if used as boot blocks.
CLE
#CE
#WE
ALE
#RE
tCBSY
tCBSY
tLPROG
RY/#BY
I/Ox
80h
Address&Data Input
15h
80h
Address& Data Input
15h
80h
Address&Data Input
15h
Don’t care
Figure 9-14 Cache Program Start
Figure 9-15 Cache Program End
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9.2.5 TWO PLANE PAGE PROGRAM
TWO PLANE PAGE PROGRAM command make it possible for host to input data to the addressed
plane's cache register and queue the cache register to be moved to the NAND Flash array.
This command can be issued several times. Each time a new plane address is specified that plane
is also queued for data transfer. To input data for the final plane and to begin the program operation
for all previously queued planes, either the PAGE PROGRAM command or the CACHE PROGRAM
command have to be issued. All of the queued planes will move the data to the NAND Flash array.
when it is ready (SR BIT 6 = 1),this command is accepted.
At the block and page address is specified, input a page to the cache register and queue it to be
moved to the NAND Flash array ,the 80h is issued to the command register. Unless this command
has been preceded by a TWO PLANE PAGE PROGRAM command, issuing the 80h to the command
register clears all of the cache registers' contents on the selected target. Write five address cycles
containing the column address and row address; data input cycles follow. Serial data is input
beginning at the column address specified. At any time, while the data input cycle, the RANDOM
DATA INPUT (85h) command can be issued. When data input is complete, write 11h to the command
register. The device will go busy (SR BIT 6 = 0, SR BIT 5 = 0) for tDBSY.
To ascertain the progress of tDBSY, the host can monitor the target's RY/#BY signal or, the status
operations (70h, 78h) can be used alternatively,. When the device status shows that it is ready (SR
BIT 6 = 1), additional TWO PLANE PAGE PROGRAM commands can be issued to queue additional
planes for data transfer, then, the PAGE PROGRAM or CACHE PROGRAM commands can be
issued.
When the PAGE PROGRAM command is used as the final command of a two plane program
operation, data is transferred from the cache registers to the NAND Flash array for all of the
addressed planes during tPROG. When the device is ready (SR BIT 6 = 1, SR BIT 5 = 1), the host
should check the status of the SR BIT 0 for each of the planes to verify that programming completed
successfully.
When the CACHE PROGRAM command is used as the final command of a program cache two plane
operation, data is transferred from the cache registers to the data registers after the previous array
operations completed. Then,The data is moved from the data registers to the NAND Flash array for
all of the addressed planes. This occurs while tCBSY. After tCBSY, the host should check the status
of the SR BIT 1 for each of the planes from the previous program cache operation, if any, to verify
that programming completed successfully.
When system issues TWO PLANE PAGE PROGRAM, PAGE PROGRAM, and CACHE PROGRAM
commands, READ STATUS (70h) command can confirm whether the operation(s) passed or failed.
If the status after READ STATUS (70h) command indicates an error (SR BIT 0 = 1 and/or SR BIT 1
= 1), READ STATUS ENHANCED (78h) command can be determined which plane is failed.
TWO PLANE PROGRAM commands require five-cycle addresses, one address indicates the
operational plane. These addresses are subject to the following requirements:
• The column address bits must be valid address for each plane
• The plane select bit, A18, must be set to “L” for 1st address input, and set to “H” for 2nd address input.
• The page address (A17-A12) and block address (A28-A19) of first input are don’t care. It follows
secondary inputted page address and block address.
Two plane operations must be same type operation across the planes; for example, it is not possible
to perform a PROGRAM operation on one plane with an ERASE operation on another.
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tPROG
(Program busy time)
tDBSY
RY/#BY
Busy
l/Ox
80h
Page program
Setup code
Address Inputs
11h
Data Input
A0-A11=Valid
A12-A17=set to `Low`
A18=set to `Low`
A19-A28=set to `Low`
Confirm
Code
Busy
※
81h
Multiplane Page
Program setup
code
Data Input
Address Inputs
A0-A11=Valid
A12-A17=Valid
A18=set to `High`
A19-A28=Valid
10h
Confirm
Code
70h
SR0
Read Status
Register
1)The same row address, except for A18, is applied to the two blocks.
2)Any command between 11h and 81h is prohibited except 70h,78h,and FFh
※81h:Traditional Protocol 80h:ONFI Protocol
80h
10h
81h
11h
Data
Input
FirstPlane
(1024 block)
Second Plane
(1024 block)
Block 0
Block 1
Block 2
Block 3
:
:
Block 2044
Block 2045
Block 2046
Block 2047
Figure 9-16 Two Plane Page Program
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CLE
#CE
tADL
tWC
tADL
tADL
#WE
tWHBL
ALE
#RE
※
I/O×
80h
Address (5cycles)
Din Din
N
M
A0 – A11 = Valid
A12 – A17 = don’t care
A18 = ‘Low’
A19 – A28 = don’t care
RY/#BY
81h
11h
Address (5cycles)
Din Din
N
M
15h
A0 – A11 = Valid
A12 – A17 = Valid
A18 = set to ’High’
A19 – A28 = Valid
tDBSY
tCBSY
※81h: Traditional Protocol 80h:ONFI Protocol
Return to A Can be repeated up
to 63times
A
CLE
#CE
tADL
#WE
ALE
#RE
※
I/O×
80h
Address (5cycles)
A0 – A11 = Valid
A12 – A17 = don’t care
A18 = ‘Low’
A19 – A28 = don’t care
RY/#BY
Din Din
N
M
81h
11h
Address (5cycles)
A0 – A11 = Valid
A12 – A17 = Valid
A18 = set to ’High’
A19 – A28 = Valid
tDBSY
Din Din
N
M
10h
70h
SR0
tPROG
A
1.In this figure the Read Status Register (70h) is used ,but the Read Status Enhanced (78h) can be used as well.
Figure 9-17 Two Plane Cache Program
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9.3
COPY BACK operation
Copy Back operations require two command sets. Issue a READ for COPY BACK (00h-35h)
command first, then the PROGRAM for COPY BACK (85h-10h) command. Copy back operations are
only supported within a same plane.
9.3.1 READ for COPY BACK (00h-35h)
The READ for COPY BACK command is used together with the PROGRAM for COPY BACK (85h10h) command. To start execution, READ for COPY BACK (00h) command is written to the Command
Register, followed by the five cycles of the source page address. To start the transfer of the selected
page data from the memory array to the Cache Register, write the 35h command to the Command
Register.
After execution of the READ for COPY BACK command sequence and RY/#BY returns to HIGH
marking the completion of the operation, the transferred data from the source page into the Cache
Register may be read out by toggling #RE. Data is output sequentially from the column address that
was originally specified with the READ for COPY BACK command. RANDOM DATA OUTPUT (05hE0h) commands can be issued multiple times without any limitation after READ for COPY BACK
command has been executed (see Figures 9-19 and 9-20).
At this point the device is in ready state to accept the PROGRAM for COPY BACK command.
9.3.2 PROGRAM for COPY BACK (85h-10h)
After the READ for COPY BACK command operation has been completed and RY/#BY goes HIGH,
the PROGRAM for COPY BACK command can be written to the Command Register. The command
results in the transfer of data from the Cache Register to the Data Register, then internal operations
start programming of the new destination page. The sequence would be, write 85h to the Command
Register, followed by the five cycle destination page address to the NAND array. Next write the 10h
command to the Command Register; this will signal the internal controller to automatically start to
program the data to new destination page. During this programming time, RY/#BY will LOW. The
READ STATUS command can be used instead of the RY/#BY signal to determine when the program
is complete. When Status Register Bit 6 (I/O6) equals to “1”, Status Register Bit 0 (I/O0) will indicate
if the operation was successful or not.
The RANDOM DATA INPUT (85h) command can be used during the PROGRAM for COPY BACK
command for modifying the original data. Once the data is copied into the Cache Register using the
READ for COPY BACK (00h-35h) command, follow by writing the RANDOM DATA INPUT (85h)
command, along with the address of the data to be changed. The data to be changed is placed on
the external data pins. This operation copies the data into the Cache Register. Once the 10h
command is written to the Command Register, the original data and the modified data are transferred
to the Data Register, and programming of the new page commences. The RANDOM DATA INPUT
command can be issued numerous times without limitation, as necessary before starting the
programming sequence with 10h command.
Since COPY BACK operations do not use external memory and the data of source page might include
a bit errors, a competent ECC scheme should be developed to check the data before programming
data to a new destination page.
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9.3.3 TWO PLANE READ for COPY BACK
To improve read through rate, TWO PLANE READ for COPY BACK operation is copied data
concurrently from one or two plane to the specified cache registers.
TWO PLANE PROGRAM for COPY BACK command can move the data in two pages from the cache
registers to different pages. This operation improves system performance than PROGRAM for COPY
BACK operation.
9.3.4 TWO PLANE PROGRAM for COPY BACK
Function of TWO PLANE PROGRAM for COPY BACK command is equal to TWO-PLANE PAGE
PROGRAM command, except that when 85h is written to the command register, then cache register
contents are not cleared. Refer to TWO-PLANE PAGE PROGRAM for more details features.
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CLE
#CE
#WE
ALE
#RE
I/ Ox
00h
Address (5cycles)
Data output
35h
05h
Address
(2cycles)
E0h
Data Output
85h
Address(5cycles)
10h
70h
Status
Output
No limitation
Optional
tPROG
tR
RY / # BY
Don’t care
Figure 9-18 Program for copy back Operation
CLE
#CE
#WE
ALE
#RE
tPROG
tR
RY/#BY
I/Ox
00h Address(5Cycles) 35h
DataOutput
85h Address(5cycles )
Data Input
85h
Address
(2cycles)
Data Input
10h
70h
Status
Output
No limitation
Optional
Don’t care
Figure 9-19 Copy Back Operation with Random Data Input
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tR
RY/#BY
#RE
00h
I/O×
Address(5cycles)
35h
Address(5cycles)
00h
Plane 0 source
Address(5cycles)
06h
Plane 1 source
E0h
Plane 0 or Plane 1 source address
1
RY/#BY
#RE
Data Output
I/O×
Address(2cycles)
06h
E0h
Data Output
Selected Plane
column address
Data from selected Plane
1
Data from selected plane
From new column address
2
Optional
tDBSY
tPROG
RY/#BY
#RE
85h
I/O×
Address(5cycles)
85h
11h
Address(5cycles)
Plane 0 destination
10h
70h
Status
Plane 1 destination
2
Figure 9-20 Two Plane Copy Back
tR
RY/#BY
I/O?
00h
Address(5cycles)
Plane 0 source
00h
Address(5cycles)
85h
35h
data
Address(5cycles)
85h
Address(2cycles)
Unlimited number
of repetitions
Plane 1 source
Plane 0 destination optional
Data
11h
1
tPROG
tDBSY
RY/#BY
I/O?
85h
Address(5cycles)
10h
70h
Status
Plane 1 destination
1
Figure 9-21 Two Plane Copy Back with Random Data Input
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Figure 9-22 Two Plane Program for copy back
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9.4 BLOCK ERASE operation
9.4.1
BLOCK ERASE (60h-D0h)
Erase operations happen at the architectural block unit. This W29N02GV has 2048 erase blocks.
Each block is organized into 64 pages (x8:2112 bytes/page, x16:1056 words/page), 132K bytes
(x8:128K + 4K bytes, x16:64 K+ 2Kwords)/block. The BLOCK ERASE command operates on a block
by block basis.
Erase Setup command (60h) is written to the Command Register. Next, the three cycle block address
is written to the device. The page address bits are loaded during address block address cycle, but
are ignored. The Erase Confirm command (D0h) is written to the Command Register at the rising
edge of #WE, RY/#BY goes LOW and the internal controller automatically handles the block erase
sequence of operation. RY/#BY goes LOW during Block Erase internal operations for a period of
tBERS,
The READ STATUS (70h) command can be used for confirm block erase status. When Status
Register Bit6 (I/O6) becomes to “1”, block erase operation is finished. Status Register Bit0 (I/O0) will
indicate a pass/fail condition (see Figure 9-24).
CLE
#CE
#WE
ALE
#RE
I/Ox
60h
Address Input (3cycles)
70h
D0h
Status Output
I / O 0 = 0 pass
I / O 0 = 1 fail
tBERS
RY/#BY
Don’t care
Figure 9-23 Block Erase Operation
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9.4.2 TWO PLANE BLOCK ERASE
TWO PLANE BLOCK ERASE (60h-D1h) command indicates two blocks in the specified plane that is
to be erased. To start ERASE operation for indicated blocks in the specified plane, write the BLOCK
ERASE (60h-D0h) command.
To indicate a block to be erased, writing 60h to the command register, then, write three address cycles
containing the row address, the page address is ignored. By writing D1h command to command
register, the device will go busy (SR BIT 6 = 0, SR BIT 5 = 0) for tDBSY.
To confirm busy status during tDBSY, the host can monitor RY/#BY signal. Instead, system can use
READ STATUS (70h) or READ STATUS ENHANCED (78h) commands. When the status shows
ready (SR BIT 6 = 1, SR BIT 5 = 1), additional TWO PLANE BLOCK ERASE commands can be
issued for erasing two blocks in a specified plane.
When system issues TWO PLANE BLOCK ERASE (60h-D1h), and BLOCK ERASE (60h-D0h)
commands, READ STATUS (70h) command can confirm whether the operation(s) passed or failed.
If the status after READ STATUS (70h) command indicates an error (SR BIT 0 = 1), READ STATUS
ENHANCED (78h) command can be determined which plane is failed.
TWO PLANE BLOCK ERASE commands require three cycles of row addresses; one address
indicates the operational plane. These addresses are subject to the following requirements:
• The plane select bit, A18, must be different for each issued address.
• Block address (A28-A19) of first input is don’t care. It follows secondary inputted block address.
Two plane operations must be same type operation across the planes; for example, it is not possible
to perform a PROGRAM operation on one plane with an ERASE operation on another.
CLE
#CE
#WE
ALE
#RE
I/Ox
60h
R1A
R2A
R3A
D1h
60h
R1B
R2B
R3B
D0h
tDBSY
tBERS
Busy
Busy
RY/#BY
Don’t care
Figure 9-24 Two Plane Block Erase Operation
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9.5
RESET operation
9.5.1 RESET (FFh)
READ, PROGRAM, and ERASE commands can be aborted by the RESET (FFh) command during
the time the W29N02GV is in the busy state. The Reset operation puts the device into known status.
The data that is processed in either the programming or erasing operations are no longer valid. This
means the data can be partially programmed or erased and therefore data is invalid. The Command
Register is cleared and is ready to accept next command. The Data Register and Cache Register
contents are marked invalid.
The Status Register indicates a value of E0h when #WP is HIGH; otherwise a value of 60h is written
when #WP is LOW. After RESET command is written to the command register, RY/#BY goes LOW
for a period of tRST (see Figure 9-26).
Figure 9-25 Reset Operation
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9.6 FEATURE OPERATION
The GET FEATURES (EEh) and SET FEATURES (EFh) commands are used to change the NAND
Flash device behavior from the default power on settings. These commands use a one-byte feature
address to determine which feature is to be read or modified. A range of 0 to 255 defines all features;
each is described in the features table (see Table 9.5 thru 9.7). The GET FEATURES (EEh) command
reads 4-Byte parameter in the features table (See GET FEATURES function). The SET FEATURES
(EFh) command places the 4-Byte parameter in the features table (See SET FEATURES function).
When a feature is set, meaning it remains active by default until the device is powered off. The set
feature remains the set even if a RESET (FFh) command is issued.
Feature address
00h
02h-7Fh
Description
N.A
Reserved
80h
Vendor specific parameter : Programmable I/O drive strength
81h
Vendor specific parameter : Programmable RY/#BY pull-down strength
82h-FFh
Reserved
Table 9-5 Features
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Feature Address 80h: Programmable I/O Drive Strength
Sub feature
Options
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Value
Notes
1
parameter
P1
I/O
Full (default)
Reserved (0)
0
0
00h
drive strength
Three-quarters
Reserved (0)
0
1
01h
One-half
Reserved (0)
1
0
02h
One-quarter
Reserved (0)
1
1
03h
P2
Reserved (0)
00h
Reserved (0)
00h
Reserved (0)
00h
P3
P4
Table 9-6 Feature Address 80h
Note:
1.
The default drive strength setting is Full strength. The Programmable I/O Drive Strength mode is used to
change from the default I/O drive strength. Drive strength should be selected based on expected loading of
the memory bus. This table shows the four supported output drive-strength settings. The device returns to
the default drive strength mode when a power cycle has occurred. AC timing parameters may need to be
relaxed if I/O drive strength is not set to full.
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Feature Address 81h: Programmable RY/#BY Pull-down Strength
Sub feature
Options
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Value
Notes
1
parameter
P1
RY/#BY
Full (default)
Reserved (0)
0
0
00h
pull-down
Three-quarters
Reserved (0)
0
1
01h
One-half
Reserved (0)
1
0
02h
One-quarter
Reserved (0)
1
1
03h
strength
P2
Reserved (0)
00h
Reserved (0)
00h
Reserved (0)
00h
P3
P4
Table 9-7 Feature Address 81h
Note:
1.
The default programmable RY/#BY pull-down strength is set to Full strength. The pull-down strength is used
to change the RY/#BY pull-down strength. RY/#BY pull-down strength should be selected based on expected
loading of RY/#BY. The four supported pull-down strength settings are shown. The device returns to the
default pull-down strength when a power cycle has occurred.
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9.6.1 GET FEATURES (EEh)
The GET FEATURES command returns the device feature settings including those previously set by
the SET FEATURES command. To use the Get Feature mode write the command (EEh) to the
Command Register followed by the single cycle byte Feature Address. RY/#BY will goes LOW for the
period of tFEAT. If Read Status (70h) command is issued for monitoring the process completion
status, Read Command (00h) has to be executed to re-establish data output mode. Once, RY/#BY
goes HIGH, the device feature settings can be read by toggling #RE. The device remains in Feature
Mode until another valid command is issued to Command Register. See Figure 9-27.
Figure 9-26 Get Feature Operation
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9.6.2 SET FEATURES (EFh)
The SET FEATURES command sets the behavior parameters by selecting a specified feature
address. To change device behavioral parameters, execute Set Feature command by writing EFh to
the Command Register, followed by the single cycle feature address. Each feature parameter (P1P4) is latched at the rising edge of each #WE. The RY/#BY signal will go LOW during the period of
tFEAT while the four feature parameters are stored. The Read Status (70h) command can be issued
for monitoring the progress status of this operation. The parameters are stored in device until the
device goes through a power on cycle. The device remains in feature mode until another valid
command is issued to Command Register.
Figure 9-27 Set Feature Operation
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9.7 ONE TIME PROGRAMMABLE (OTP) area
The device has One-Time Programmable (OTP) memory area comprised of a number of pages (2112
bytes/page) (1056words/page). This entire range of pages is functionally guaranteed. Only the OTP
commands can access the OTP area. When the device ships from Winbond, the OTP area is in an
erase state (all bits equal “1”). The OTP area cannot be erased, therefore protecting the area only
prevent further programming. Contact to Winbond for using this feature.
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9.8 WRITE PROTECT
#WP pin can enable or disable program and erase commands preventing or allowing program and
erase operations. Figure 9-29 to 9-34 shows the enabling or disabling timing with #WP setup time
(tWW) that is from rising or falling edge of #WP to latch the first commands. After first command is
latched, #WP pin must not toggle until the command operation is complete and the device is in the
ready state. (Status Register Bit5 (I/O5) equal 1)
# WE
tWW
I /Ox
60h
D0h
#WP
RY/#BY
Figure 9-28 Erase Enable
#WE
tWW
I/Ox
60h
D0h
#WP
RY/#BY
Figure 9-29 Erase Disable
#WE
tWW
I/Ox
80 h
10h
( or 15h)
#WP
RY/#BY
Figure 9-30 Program Enable
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#WE
tWW
I/Ox
80 h
10h
( or 15h)
#WP
RY/#BY
Figure 9-31 Program Disable
#WE
tWW
I/Ox
85h
10h
# WP
RY/#BY
Figure 9-32 Program for Copy Back Enable
#WE
tWW
I/Ox
10 h
85h
# WP
RY/#BY
Figure 9-33 Program for Copy Back Disable
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9.9
BLOCK LOCK
The device has block lock feature that can protect the entire device or user can indicate a ranges of
blocks from program and erase operations. Using this feature offers increased functionality and
flexibility data protection to prevent unexpected program and erase operations. Contact to Winbond
for using this feature.
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10. ELECTRICAL CHARACTERISTICS
10.1 Absolute Maximum Ratings (3.3V)
PARAMETERS
SYMBOL
Supply Voltage
CONDITIONS
VCC
Voltage Applied to Any Pin
VIN
Storage Temperature
Relative to Ground
TSTG
RANGE
UNIT
–0.6 to +4.6
V
–0.6 to +4.6
V
–65 to +150
°C
5
mA
Short circuit output current, I/Os
Table 10-1 Absolute Maximum Ratings
Notes:
1.
Specification for W29N02GV is preliminary. See preliminary designation at the end of this document.
2.
This device has been designed and tested for the specified operation ranges. Proper operation outside of
these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
10.2 Operating Ranges (3.3V)
PARAMETER
Supply Voltage
Ambient Temperature,
Operating
SYMBOL
CONDITIONS
VCC
TA
Industrial
SPEC
UNIT
MIN
MAX
2.7
3.6
V
-40
+85
°C
Table 10-2 Operating Ranges
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10.3 Device power-up timing
The device is designed to avoid unexpected program/erase operations during power transitions.
When the device is powered on, an internal voltage detector disables all functions whenever Vcc is
below about 2V at 3V device. Write Protect (#WP) pin provides hardware protection and is
recommended to be kept at VIL during power up and power down. A recovery time of minimum 1ms
is required before internal circuit gets ready for any command sequences (See Figure 10-1).
Vcc
#WP
#WE
1ms
(Min)
RY/#BY
5 ms (Max)
Undefined
Figure 10-1 Power ON/OFF sequence
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10.4 DC Electrical Characteristics (3.3V)
SPEC
PARAMETER
SYMBOL
CONDITIONS
UNIT
MIN
TYP
MAX
-
25
35
mA
tRC= tRC MIN
Sequential Read current
Icc1
#CE=VIL
IOUT=0mA
Program current
Icc2
-
-
25
35
mA
Erase current
Icc3
-
-
25
35
mA
Standby current (TTL)
ISB1
-
-
1
mA
Standby current (CMOS)
ISB2
-
10
50
µA
#CE=VIH
#WP=0V/Vcc
#CE=Vcc – 0.2V
#WP=0V/Vcc
Input leakage current
ILI
VIN= 0 V to Vcc
-
-
±10
µA
Output leakage current
ILO
VOUT=0V to Vcc
-
-
±10
µA
Input high voltage
VIH
I/O7~0, #CE,#WE,#RE,
#WP,CLE,ALE
0.8 x Vcc
-
Vcc + 0.3
V
VIL
-
-0.3
-
0.2 x Vcc
V
VOH
IOH=-400µA
2.4
-
-
V
VOL
IOL=2.1mA
-
-
0.4
V
IOL(RY/#BY)
VOL=0.4V
8
10
Input low voltage
Output high voltage
(1)
Output low voltage(1)
Output low current
mA
Table 10-3 DC Electrical Characteristics
Note:
1.
VOH and VOL may need to be relaxed if I/O drive strength is not set to full.
2.
IOL (RY/#BY) may need to be relaxed if RY/#BY pull-down strength is not set to full
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10.5 AC Measurement Conditions (3.3V)
PARAMETER
SYMBOL
Input Capacitance(1), (2)
SPEC
UNIT
MIN
MAX
CIN
-
10
pF
Input/Output Capacitance(1), (2)
CIO
-
10
pF
Input Rise and Fall Times
TR/TF
-
5
ns
Input Pulse Voltages
-
0 to VCC
V
Input/Output timing Voltage
-
Vcc/2
V
Output load (1)
CL
1TTL GATE and CL=30pF
-
Table 10-4 AC Measurement Conditions
Notes:
1.
Verified on device characterization , not 100% tested
2.
Test conditions TA=25’C, f=1MHz, VIN=0V
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10.6 AC timing characteristics for Command, Address and Data Input (3.3V)
SPEC
PARAMETER
SYMBOL
UNIT
MIN
MAX
ALE to Data Loading Time
tADL
70
-
ns
ALE Hold Time
tALH
5
-
ns
ALE setup Time
tALS
10
-
ns
#CE Hold Time
tCH
5
-
ns
CLE Hold Time
tCLH
5
-
ns
CLE setup Time
tCLS
10
-
ns
#CE setup Time
tCS
15
-
ns
Data Hold Time
tDH
5
-
ns
Data setup Time
tDS
10
-
ns
Write Cycle Time
tWC
25
-
ns
#WE High Hold Time
tWH
10
-
ns
#WE Pulse Width
tWP
12
-
ns
#WP setup Time
tWW
100
-
ns
Table 10-5 AC timing characteristics for Command, Address and Data Input
Note:
1.
tADL is the time from the #WE rising edge of final address cycle to the #WE rising edge of first data cycle.
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AC timing characteristics for Operation (3.3V)
10.7 AC timing characteristics for Operation (3.3V)
SPEC
PARAMETER
SYMBOL
UNIT
MIN
MAX
ALE to #RE Delay
tAR
10
-
ns
#CE Access Time
tCEA
-
25
ns
#CE HIGH to Output High-Z(1)
tCHZ
-
30
ns
CLE to #RE Delay
tCLR
10
-
ns
#CE HIGH to Output Hold
tCOH
15
-
ns
tRCBSY
-
25
µs
Output High-Z to #RE LOW
tIR
0
-
ns
Data Transfer from Cell to Data Register
tR
-
25
µs
READ Cycle Time
tRC
25
-
ns
#RE Access Time
tREA
-
20
ns
#RE HIGH Hold Time
tREH
10
-
ns
#RE HIGH to Output Hold
tRHOH
15
-
ns
#RE HIGH to #WE LOW
tRHW
100
-
ns
#RE HIGH to Output High-Z(1)
tRHZ
-
100
ns
tRLOH
5
-
ns
tRP
12
-
ns
tRR
20
-
ns
tRST
-
5/10/500
µs
tWB
-
100
ns
tWHR
60
-
ns
Cache Busy in Cache Read mode
#RE LOW to output hold
#RE Pulse Width
Ready to #RE LOW
Reset Time (READ/PROGRAM/ERASE)
(2)
#WE HIGH to Busy(3)
#WE HIGH to #RE LOW
Table 10-6 AC timing characteristics for Operation
Notes:
AC characteristics may need to be relaxed if I/O drive strength is not set to “full.”
1.
Transition is measured ±200mV from steady-state voltage with load. This parameter is sampled and not
100 % tested.
2.
Do not issue new command during tWB, even if RY/#BY is ready.
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10.8 Program and Erase Characteristics
SPEC
PARAMETER
SYMBOL
UNIT
TYP
MAX
NoP
-
4
cycles
tPROG
250
700
µs
tCBSY
3
700
µs
Busy Time for SET FEATURES /GET FEATURES
tFEAT
-
1
µs
Busy Time for program/erase at locked block
tLBSY
-
3
µs
Busy Time for OTP program when OTP is protected
tOBSY
-
30
µs
Block Erase Time
tBERS
2
10
ms
tLPROG
-
-
-
tDBSY
0.5
1
µs
Number of partial page programs
Page Program time
Busy Time for Cache program
(1)
Last Page Program time (2)
Busy Time for Two Plane page program and Two Plane Block
Erase
Table 10-7 Program and Erase Characteristics
Note:
1.
tCBSY maximum time depends on timing between internal program complete and data-in.
2.
tLPROG = Last Page program time (tPROG) + Last -1 Page program time (tPROG) – Last page Address,
Command and Data load time.
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11. TIMING DIAGRAMS
Figure 11-1 Command Latch Cycle
Figure 11-2 Address Latch Cycle
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Figure 11-3 Data Latch Cycle
Note:
1.
Din Final = 2,111(x8)
Figure 11-4 Serial Access Cycle after Read
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#CE
tCHZ
tRC
tRP tREH
tCOH
#RE
tRHZ
tREA
tCEA
I/Ox
tREA
tRLOH
Dout
tRHOH
Dout
Dout
tRR
RY/#BY
Don’t care
Figure 11-5 Serial Access Cycle after Read (EDO)
Figure 11-6 Read Status Operation
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Figure 11-7 Page Read Operation
CLE
#CE
#RE
ALE
tR
RY/#BY
#WE
I/Ox
00h
Address (4 cycles)
30h
Data output
Don’t care
tCEA
#CE
tREA
#RE
I/Ox
tCHZ
tCOH
Out
Figure 11-8 #CE Don't Care Read Operation
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CLE
tCLR
#CE
tWC
#WE
tWB
tAR
tWHR
ALE
tREA
tRC
#RE
tRR
I/Ox
00h
30h
05h
E0h
Colu mn address n
Column address m
tR
RY/#BY
Busy
Don’t care
Figure 11-9 Random Data Output Operation
CLE
tCLS tCLH
#CE
tCS tCH
tWC
#WE
tCEA
ALE
tRC
#RE
I/Ox
tDS
tDH
00h
tWB
Col
Col
add 1
add 2
Column address
00h
Row
add 1
Ro w
add 2
tR
tREA
tRR
30h
31h
Page ad dress
m
Dout
0
tDCBSYR1
Dout
1
Dout
31h
Page address m
RY/#BY
Colu mn address 0
1
Don’t care
Figure 11-10 Cache Read Operation (1/2)
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Figure 11-11 Cache Read Operation (2/2)
Note:
1.
See Table 9.1 for actual value.
CLE
#CE
#WE
tAR
ALE
#RE
tWHR
I/Ox
90h
00h
tREA
Byte 0
Byte 1
Byte 2
Byte 3
Byte 4
(or 20h)
Address, 1 cycle
Figure 11-12 Read ID
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CLE
#CE
tWC
tADL
#WE
tWB
tWHR
tPROG
ALE
#RE
I/Ox
80h
Col
add 1
Col
add 2
Ro w
add 1
SERIAL DATA
INPUT command
Ro w
add 2
10h
PROGRAM
co mmand
1 up to m Byte
serial inpu t
70h
Status
READ STATUS
command
RY/#BY
x8 device:m = 2112 bytes
Don’t care
Figure 11-13 Page Program
CLE
#CE
#WE
ALE
I/Ox
80h
Address(4 cycles)
Data input
tCS
Data input
10h
tCH
#CE
tWP
#WE
Don’t care
Figure 11-14 #CE Don't Care Page Program Operation
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CLE
#CE
tADL
ｔWC
tADL
#WE
tWB
ALE
#RE
I/Ox
80h
Col
add 1
Col
add 2
Ro w
add1
Ro w
add2
Din
N+1
Din
ｎ
Serial Data
Inpu t Command
Serial INPUT
Command
85h
Col
add1
Col
add2
Din
N+1
Din
ｎ
Rand om Data Input Column address
Command
Serial INPUT
10h
Program
70h
St atus
tPROG
Comma nd
RY/#BY
Don’t care
Figure 11-15 Page Program with Random Data Input
CLE
#CE
tADL
ｔWC
#WE
tWB
tWB
ALE
#RE
I/Ox
Col
00h
add 1
Serial data INPUT
Command
Col
add 2
Row
add1
Row
add2
35h
85h
Col
add 1
Col
add 2
Row
add1
Row
add2
Din
1
Din
n
70h
10h
Program
tR
Command
Status
tPROG
RY/#BY
Busy
Don’t care
Figure 11-16 Copy Back
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CLE
#CE
#WE
ｔWC
tADL
tADL
ｔWC
tWB
tWB
ALE
#RE
I/Ox
Col Col Row Ro w Row
80h add1
add 2 add1 add2 add3
Serial data INPU T
Comma nd
Din
Din
ｍ
ｎ
Serial INPUT
15h
Program
Command
80h
Col Col Ro w Row Ro w
add1 add2 add1 add2 add3
tCBSY
Din
ｎ
Din
ｍ
10h
Program
Command
70h
Status
tPROG
RY/#BY
Last page input and programming
Don’t care
Figure 11-17 Cache Program
Figure 11-18 Block Erase
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CLE
#CE
#WE
tWB
tRST
RY/#BY
I/Ox
FFh
RESET
co mmand
Figure 11-19 Reset
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12. INVALID BLOCK MANAGEMENT
12.1
Invalid blocks
The W29N02GV may have initial invalid blocks when it ships from factory. Also, additional invalid
blocks may develop during the use of the device. Nvb represents the minimum number of valid blocks
in the total number of available blocks (See Table 12.1). An invalid block is defined as blocks that
contain one or more bad bits. Block 0, block address 00h is guaranteed to be a valid block at the time
of shipment.
Parameter
Valid block number
Symbol
Min
Max
Unit
Nvb
2008
2048
blocks
Table 12-1 Valid Block Number
12.2
Initial invalid blocks
Initial invalid blocks are defined as blocks that contain one or more invalid bits when shipped from
factory.
Although the device contains initial invalid blocks, a valid block of the device is of the same quality
and reliability as all valid blocks in the device with reference to AC and DC specifications. The
W29N02GV has internal circuits to isolate each block from other blocks and therefore, the invalid
blocks will not affect the performance of the entire device.
Before the device is shipped from the factory, it will be erased and invalid blocks are marked. All initial
invalid blocks are marked with non-FFh at the first byte of spare area on the 1st or 2nd page. The initial
invalid block information cannot be recovered if inadvertently erased. Therefore, software should be
created to initially check for invalid blocks by reading the marked locations before performing any
program or erase operation, and create a table of initial invalid blocks as following flow chart
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Figure 12-1 flow chart of create initial invalid block table
12.3
Error in operation
Additional invalid blocks may develop in the device during its life cycle. Following the procedures
herein is required to guarantee reliable data in the device.
After each program and erase operation, check the status read to determine if the operation failed. In
case of failure, a block replacement should be done with a bad-block management algorithm. The
system has to use a minimum 1-bit ECC per 528 bytes of data to ensure data recovery.
Operation
Detection and recommended procedure
Erase
Status read after erase Block Replacement
Program
Status read after program Block Replacement
Read
Verify ECC ECC correction
Table 12-2 Block failure
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Figure 12-2 Bad block Replacement
Note:
1.
An error happens in the nth page of block A during program or erase operation.
2.
Copy the data in block A to the same location of block B which is valid block.
3.
Copy the nth page data of block A in the buffer memory to the nth page of block B
4.
Creating or updating bad block table for preventing further program or erase to block A
.
12.4
Addressing in program operation
The pages within the block have to be programmed sequentially from LSB (least significant bit) page
to the MSB (most significant bit) within the block. The LSB is defined as the start page to program,
does not need to be page 0 in the block. Random page programming is prohibited.
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13. PACKAGE DIMENSIONS
13.1
TSOP 48-pin 12x20
1
48
e
E
b
c
D
HD
A2
A
θ L
A1
L1
Sy mbol
A
A1
A2
D
HD
E
b
c
e
L
L1
Y
θ
MILLIMETER
MIN. NOM. MAX.
1.20
0.05
0.95
1.00
1.05
18.4
18.5
18.3
19.8
20.0
20.2
MIN.
INCH
NOM. MAX.
0.047
0.002
0.037
0.720
0.780
0.039
0.724
11.9
0.468
12.0
0.17
0.10
0.22
0.50
0.60
0.80
12.1
0.27
0.21
0.007
0.004
0.70
0.020
0.041
0.728
0.795
0.787
0.472
0.476
0.009
0.011
0.008
0.020
0.50
0.024
0.031
0.028
0.004
0.10
0
Y
5
0
5
Figure 13-1 TSOP 48-PIN 12X20mm
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13.2 Fine-Pitch Ball Grid Array 63-ball
Figure 13-2 Fine-Pitch Ball Grid Array 63-Ball
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14. ORDERING INFORMATION
W 29N
02 G V S I A A
Winbond Standard Product
W: Winbond
Product Family
ONFI compatible NAND Flash memory
Density
02: 2 Gbit
Product Version
G
Supply Voltage and Bus Width
V: 2.7~3.6V and x8 device
W: 1.7~1.95V and X16 device
Z : 1.7~1.95V and X8 device
Packages
S: TSOP 48
B: VFBGA-63
Temparature Ranges
I: -40 to 85'C
Option Information
A: OTP Command Supported
(Contact Winbond for Option information)
Reserved
A: General Product
Figure 14-1 Ordering Part Number Description
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15. VALID PART NUMBERS
The following table provides the valid part numbers for the W29N02GV NAND Flash Memory. Please
contact Winbond for specific availability by density and package type. Winbond NAND Flash
memories use a 12-digit Product Number for ordering.
Part Numbers for Industrial Temperature:
PACKAGE
TYPE
DENSITY
VCC
BUS
PRODUCT NUMBER
TOP SIDE MARKING
S
TSOP-48
2G-bit
3V
X8
W29N02GVSIAA
W29N02GVSIAA
B
VFBGA-63
2G-bit
3V
X8
W29N02GVBIAA
W29N02GVBIAA
Table 15-1 Part Numbers for Industrial Temperature
Note:
1.
For Industrial Temperature shipments, please contact Winbond for availability.
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16. REVISION HISTORY
VERSION
DATE
0.1
8/22/14
0.2
10/23/14
A
1/26/15
PAGE
DESCRIPTION
New Create as preliminary
76
Update POD
Remove “Preliminary”
Table 16-1 History Table
Preliminary Designation
The “Preliminary” designation on a Winbond datasheet indicates that the product is not fully
characterized. The specifications are subject to change and are not guaranteed. Winbond or an
authorized sales representative should be consulted for current information before using this product.
Trademarks
Winbond is trademark of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in
systems or equipment intended for surgical implantation, atomic energy control instruments, airplane
or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, or for other applications intended to support or sustain life. Furthermore, Winbond
products are not intended for applications wherein failure of Winbond products could result or lead to
a situation where in personal injury, death or severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their own
risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales.
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