MX25U25635F

MX25U25635F
MX25U25635F
1.8V, 256M-BIT [x 1/x 2/x 4]
CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
Key Features
• 1.65 to 2.0 volt for read, erase, and program operations
• Multi I/O Support - Single I/O, Dual I/O and Quad I/O
• Quad Input/Output page program(4PP) to enhance program performance
• Quad Peripheral Interface (QPI) Read / Program Mode
• Program Suspend/Resume & Erase Suspend/Resume
P/N: PM1712
MX25U25635F
Contents
1. FEATURES............................................................................................................................................................... 4
2. GENERAL DESCRIPTION...................................................................................................................................... 6
Table 1. Read performance Comparison.....................................................................................................6
3. PIN CONFIGURATIONS .......................................................................................................................................... 7
4. PIN DESCRIPTION................................................................................................................................................... 7
5. BLOCK DIAGRAM.................................................................................................................................................... 8
6. DATA PROTECTION................................................................................................................................................. 9
Table 2. Protected Area Sizes....................................................................................................................10
Table 3. 4K-bit Secured OTP Definition..................................................................................................... 11
7. Memory Organization............................................................................................................................................ 12
Table 4. Memory Organization...................................................................................................................12
8. DEVICE OPERATION............................................................................................................................................. 13
8-1. 256Mb Address Protocol........................................................................................................................... 15
8-2. Quad Peripheral Interface (QPI) Read Mode........................................................................................... 16
9. COMMAND DESCRIPTION.................................................................................................................................... 17
9-1.
9-2.
9-3.
9-4.
9-5.
9-6.
9-7.
9-8.
9-9.
9-10.
9-11.
9-12.
9-13.
9-14.
9-15.
9-16.
9-17.
9-18.
9-19.
9-20.
9-21.
9-22.
9-23.
9-24.
P/N: PM1712
Table 5. Command Set...............................................................................................................................17
Write Enable (WREN)............................................................................................................................... 22
Write Disable (WRDI)................................................................................................................................ 23
Read Identification (RDID)........................................................................................................................ 24
Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................ 25
Read Electronic Manufacturer ID & Device ID (REMS)............................................................................ 27
QPI ID Read (QPIID)................................................................................................................................ 28
Table 6. ID Definitions ...............................................................................................................................28
Read Status Register (RDSR).................................................................................................................. 29
Read Configuration Register (RDCR)....................................................................................................... 30
Write Status Register (WRSR).................................................................................................................. 36
Table 7. Protection Modes..........................................................................................................................37
Enter 4-byte mode (EN4B)....................................................................................................................... 40
Exit 4-byte mode (EX4B).......................................................................................................................... 40
Read Data Bytes (READ)......................................................................................................................... 41
Read Data Bytes at Higher Speed (FAST_READ)................................................................................... 42
Dual Output Read Mode (DREAD)........................................................................................................... 43
2 x I/O Read Mode (2READ).................................................................................................................... 44
Quad Read Mode (QREAD)..................................................................................................................... 45
4 x I/O Read Mode (4READ).................................................................................................................... 46
4 Byte Address Command Set.................................................................................................................. 48
Burst Read................................................................................................................................................ 50
Performance Enhance Mode.................................................................................................................... 51
Performance Enhance Mode Reset.......................................................................................................... 54
Fast Boot.................................................................................................................................................. 56
Sector Erase (SE)..................................................................................................................................... 59
Block Erase (BE32K)................................................................................................................................ 60
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REV. 1.3, MAR. 17, 2015
MX25U25635F
9-25.
9-26.
9-27.
9-28.
9-29.
9-30.
9-31.
9-32.
9-33.
Block Erase (BE)...................................................................................................................................... 61
Chip Erase (CE)........................................................................................................................................ 62
Page Program (PP).................................................................................................................................. 63
4 x I/O Page Program (4PP)..................................................................................................................... 65
Deep Power-down (DP)............................................................................................................................ 66
Enter Secured OTP (ENSO)..................................................................................................................... 67
Exit Secured OTP (EXSO)........................................................................................................................ 67
Read Security Register (RDSCUR).......................................................................................................... 67
Write Security Register (WRSCUR).......................................................................................................... 67
Table 8. Security Register Definition..........................................................................................................68
9-34. Block Lock (BP) protection....................................................................................................................... 68
9-35. Program Suspend and Erase Suspend ................................................................................................... 69
Table 9. Readable Area of Memory While a Program or Erase Operation is Suspended..........................69
Table 10. Acceptable Commands During Program/Erase Suspend after tPSL/tESL.................................70
Table 11. Acceptable Commands During Suspend (tPSL/tESL not required)............................................71
9-36. Program Resume and Erase Resume...................................................................................................... 72
9-37. No Operation (NOP)................................................................................................................................. 73
9-38. Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 73
9-39. Read SFDP Mode (RDSFDP)................................................................................................................... 75
Table 12. Signature and Parameter Identification Data Values .................................................................76
Table 13. Parameter Table (0): JEDEC Flash Parameter Tables...............................................................77
Table 14. Parameter Table (1): Macronix Flash Parameter Tables............................................................79
10. RESET.................................................................................................................................................................. 81
Table 15-1. Reset Timing-(Power On)........................................................................................................81
Table 15-2. Reset Timing-(Other Operation)..............................................................................................81
11. POWER-ON STATE.............................................................................................................................................. 82
12. ELECTRICAL SPECIFICATIONS......................................................................................................................... 83
Table 16. ABSOLUTE MAXIMUM RATINGS.............................................................................................83
Table 17. CAPACITANCE TA = 25°C, f = 1.0 MHz.....................................................................................83
Table 18. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V) ......................85
Table 19. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V) ......................86
13. OPERATING CONDITIONS.................................................................................................................................. 88
Table 20. Power-Up Timing and VWI Threshold........................................................................................89
Table 21. Power-Up/Down and Voltage Drop ............................................................................................90
13-1. INITIAL DELIVERY STATE....................................................................................................................... 90
14. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 91
15. DATA RETENTION............................................................................................................................................... 91
16. LATCH-UP CHARACTERISTICS......................................................................................................................... 91
17. ORDERING INFORMATION................................................................................................................................. 92
18. PART NAME DESCRIPTION................................................................................................................................ 93
19. PACKAGE INFORMATION................................................................................................................................... 94
20. REVISION HISTORY ............................................................................................................................................ 98
P/N: PM1712
3
REV. 1.3, MAR. 17, 2015
MX25U25635F
1.8V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O)
FLASH MEMORY
1. FEATURES
GENERAL
• Supports Serial Peripheral Interface -- Mode 0 and Mode 3
• Single Power Supply Operation
- 1.65 to 2.0 volt for read, erase, and program operations
• 256Mb: 268,435,456 x 1 bit structure or 134,217,728 x 2 bits (two I/O mode) structure or 67,108,864 x 4 bits (four
I/O mode) structure
• Protocol Support
- Single I/O, Dual I/O and Quad I/O
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is from 1.0V to 1.4V
• Fast read for SPI mode
- Support clock frequency up to 108MHz for all protocols
- Support clock frequency up to 133MHz for all protocols (for MX25U25635FZ4I-08G only)
- Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions.
- Configurable dummy cycle number for fast read operation
• Quad Peripheral Interface (QPI) available
• Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each
- Any Block can be erased individually
• Programming :
- 256byte page buffer
- Quad Input/Output page program(4PP) to enhance program performance
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 and T/B status bit defines the size of the area to be protection against program and erase instructions
• Additional 4K bit security OTP
- Features unique identifier
- Factory locked identifiable, and customer lockable
• Command Reset
• Program/Erase Suspend and Resume operation
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and 1-byte device ID
• Support Serial Flash Discoverable Parameters (SFDP) mode
P/N: PM1712
4
REV. 1.3, MAR. 17, 2015
MX25U25635F
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• RESET#/SIO3
- Hardware Reset pin or Serial input & Output for 4 x I/O read mode
• PACKAGE
- 16-pin SOP (300mil)
- 8-land WSON (8x6mm)
- 8-land WSON (8x6mm 3.4 x 4.3EP)
- 31-ball WLCSP (Ball Diameter 0.30mm)
- All devices are RoHS Compliant and Halogen-free
P/N: PM1712
5
REV. 1.3, MAR. 17, 2015
MX25U25635F
2. GENERAL DESCRIPTION
MX25U25635F is 256Mb bits Serial Flash memory, which is configured as 33,554,432 x 8 internally. When it is in
two or four I/O mode, the structure becomes 134,217,728 bits x 2 or 67,108,864 bits x 4. MX25U25635F feature a
serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O
mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial
access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin become SIO0 pin,
SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25U25635F MXSMIO (Serial Multi I/O) provides sequential read operation on the whole chip.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for erase command is executed on 4K-byte sector, 32K-byte block, or 64K-byte block,
or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25U25635F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Read performance Comparison
Numbers of
Dummy Cycles
Fast Read
(MHz)
Dual Output
Fast Read
(MHz)
Quad Output
Fast Read
(MHz)
Dual IO
Fast Read
(MHz)
Quad IO
Fast Read
(MHz)
4
-
-
-
84*
70
6
108
108
84
108
84*
8
108*
108*
108*
108
108
10 (Note2)
133
133
133
133
133
Note 1 : * mean default status
Note 2 : Please note that only MX25U25635FZ4I-08G supports 133MHz with 10 dummy cycles. All other products
are not able to set DC[1:0] to 11b.
P/N: PM1712
6
REV. 1.3, MAR. 17, 2015
MX25U25635F
4. PIN DESCRIPTION
3. PIN CONFIGURATIONS
16-PIN SOP (300mil)
DNU/SIO3
VCC
RESET#
NC
NC
NC
CS#
SO/SIO1
SYMBOL
CS#
1
2
3
4
5
6
7
8
DESCRIPTION
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
SI/SIO0
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Serial Data Output (for 1 x I/O)/ Serial
SO/SIO1
Data Input & Output (for 2xI/O or 4xI/
O read mode)
SCLK
Clock Input
Write Protection Active Low or Serial
WP#/SIO2 Data Input & Output (for 4xI/O read
mode)
Hardware Reset Pin Active low or
RESET#/SIO3 Serial Data Input & Output (for 4xI/O
read mode)
Do Not Use or Serial Data Input &
DNU/SIO3
Output (for 4xI/O read mode)
VCC
+ 1.8V Power Supply
GND
Ground
NC
No Connection
SCLK
SI/SIO0
NC
NC
NC
NC
GND
WP#/SIO2
16
15
14
13
12
11
10
9
8-WSON (8x6mm, 8x6mm 3.4 x 4.3EP)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
VCC
RESET#/SIO3
SCLK
SI/SIO0
8
7
6
5
Notes:
1. RESET# pin has internal pull up.
2. When using 1I/O or 2I/O (QE bit not enabled), the
DNU/SIO3 pin of 16SOP can not be connected to
GND. Please connect this pin to VCC.
31-BALL BGA (WLCSP) TOP View
1 2
A
B
C
NC
3 4
5 6
7 8
NC
NC
NC
NC
NC
NC
D
E
F
G
VCC
NC
NC RESET#/SIO3
NC
NC
H
SCLK
SI/SIO0
CS#
SO/SIO1
NC
NC
WP#/SIO2
NC
NC
GND
J
K
L
M
P/N: PM1712
NC
NC
NC
NC
NC
NC
NC
NC
7
REV. 1.3, MAR. 17, 2015
MX25U25635F
5. BLOCK DIAGRAM
X-Decoder
Address
Generator
SI/SIO0
SO/SIO1
SIO2 *
SIO3 *
WP# *
HOLD# *
RESET# *
CS#
SCLK
Memory Array
Y-Decoder
Data
Register
Sense
Amplifier
SRAM
Buffer
Mode
Logic
State
Machine
HV
Generator
Clock Generator
Output
Buffer
* Depends on part number options.
P/N: PM1712
8
REV. 1.3, MAR. 17, 2015
MX25U25635F
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data.
• Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from writing all commands except Release from deep power down mode command (RDP) and Read Electronic Signature
command (RES), and softreset command.
P/N: PM1712
9
REV. 1.3, MAR. 17, 2015
MX25U25635F
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be
protected as read only. The protected area definition is shown as Table 2 Protected Area Sizes, the protected
areas are more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
Table 2. Protected Area Sizes
Protected Area Sizes (T/B bit = 0)
Status bit
BP3
BP2
BP1
BP0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
Protected Area Sizes (T/B bit = 1)
Status bit
BP3
BP2
BP1
BP0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
P/N: PM1712
Protect Level
256Mb
0 (none)
1 (1 block, protected block 511st)
2 (2 blocks, protected block 510th~511st)
3 (4 blocks, protected block 508th~511st)
4 (8 blocks, protected block 504th~511st)
5 (16 blocks, protected block 496th~511st)
6 (32 blocks, protected block 480th~511st)
7 (64 blocks, protected block 448th~511st)
8 (128 blocks, protected block 384th~511st)
9 (256 blocks, protected block 256th~511st)
10 (512 blocks, protected all)
11 (512 blocks, protected all)
12 (512 blocks, protected all)
13 (512 blocks, protected all)
14 (512 blocks, protected all)
15 (512 blocks, protected all)
Protect Level
256Mb
0 (none)
1 (1 block, protected block 0th)
2 (2 blocks, protected block 0th~1th)
3 (4 blocks, protected block 0th~3rd)
4 (8 blocks, protected block 0th~7th)
5 (16 blocks, protected block 0th~15th)
6 (32 blocks, protected block 0th~31st)
7 (64 blocks, protected block 0th~63rd)
8 (128 blocks, protected block 0th~127th)
9 (256 blocks, protected block 0th~255th)
10 (512 blocks, protected all)
11 (512 blocks, protected all)
12 (512 blocks, protected all)
13 (512 blocks, protected all)
14 (512 blocks, protected all)
15 (512 blocks, protected all)
10
REV. 1.3, MAR. 17, 2015
MX25U25635F
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting device unique serial number - Which may be set by factory or system customer.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP command),
and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing Exit Security OTP command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register) command to set customer lock-down bit1 as "1". Please refer to Table 8 of "security register definition" for security
register bit definition and Table 3 of "4K-bit secured OTP definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
Size
Standard Factory Lock
xxx000~xxx00F
128-bit
ESN (electrical serial number)
xxx010~xxx1FF
3968-bit
N/A
P/N: PM1712
11
Customer Lock
Determined by customer
REV. 1.3, MAR. 17, 2015
MX25U25635F
7. Memory Organization
Table 4. Memory Organization
Sector
509
1018
…
1FF0000h
1FF0FFFh
8175
1FEF000h
1FEFFFFh
…
8176
…
individual 16 sectors
lock/unlock unit:4K-byte
…
…
…
…
1FF7FFFh
1FE8000h
1FE8FFFh
8167
1FE7000h
1FE7FFFh
…
8168
1FE0000h
1FE0FFFh
8159
1FDF000h
1FDFFFFh
…
8160
8152
1FD8000h
1FD8FFFh
8151
1FD7000h
1FD7FFFh
…
1019
1FF7000h
…
1020
individual block
lock/unlock unit:64K-byte
8183
…
510
1FF8FFFh
…
1021
1FF8000h
…
1022
8184
…
511
1FFFFFFh
…
1023
Address Range
1FFF000h
…
8191
…
Block(64K-byte) Block(32K-byte)
8144
1FD0000h
1FD0FFFh
47
002F000h
002FFFFh
P/N: PM1712
…
…
…
…
0020FFFh
001F000h
001FFFFh
…
0020000h
31
0018000h
0018FFFh
23
0017000h
0017FFFh
…
24
0010FFFh
000F000h
000FFFFh
…
0010000h
15
…
16
8
0008000h
0008FFFh
7
0007000h
0007FFFh
…
…
…
0
0
32
…
1
0027FFFh
…
1
2
0028FFFh
027000h
…
3
0028000h
39
…
4
individual block
lock/unlock unit:64K-byte
40
…
2
…
5
…
individual block
lock/unlock unit:64K-byte
0
0000000h
0000FFFh
12
individual 16 sectors
lock/unlock unit:4K-byte
REV. 1.3, MAR. 17, 2015
MX25U25635F
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation.
2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z.
3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode
until next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported".
5.For the following instructions: RDID, RDSR, RDSCUR, READ/READ4B, FAST_READ/FAST_READ4B,
2READ/2READ4B, DREAD/DREAD4B, 4READ/4READ4B, QREAD/QREAD4B, RDSFDP, RES, REMS, QPIID,
RDEAR, RDFBR, RDCR, the shifted-in instruction sequence is followed by a data-out sequence. After any bit
of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE/SE4B,
BE32K/BE32K4B, BE/BE4B, CE, PP/PP4B, 4PP/4PP4B, DP, ENSO, EXSO, WRSCUR, EN4B, EX4B, SUSPEND, RESUME, NOP, RSTEN, RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM1712
13
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 2. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
LSB
MSB
SI
High-Z
SO
Figure 3. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQX
tCL
tCLQV
tCLQX
LSB
SO
SI
P/N: PM1712
tSHQZ
ADDR.LSB IN
14
REV. 1.3, MAR. 17, 2015
MX25U25635F
8-1. 256Mb Address Protocol
The original 24 bit address protocol of serial Flash can only access density size below 128Mb. For the memory
device of 256Mb and above, the 32bit address is requested for access higher memory size. The MX25U25635F
provides three different methods to access the whole 256Mb density:
1.Command entry 4-byte address mode: Issue Enter 4-Byte mode command to set up the 4BYTE bit in
Configuration Register bit. After 4BYTE bit has been set, the number of address cycle become 32-bit.
2. Extended Address Register (EAR): configure the memory device into two 128Mb segments to select which one
is active through the EAR bit “0”.
3. 4-byte Address Command Set: When issuing 4-byte address command set, 4-byte address (A31-A0) is
requested after the instruction code. Please note that it is not necessary to issue EN4B command before issuing
any of 4-byte command set.
Enter 4-Byte Address Mode
In 4-byte Address mode, all instructions are 32-bits address clock cycles. By using EN4B and EX4B to enable and
disable the 4-byte address mode.
When 4-byte address mode is enabled, the EAR<0> becomes "don't care" for all instructions requiring 4-byte
address. The EAR function will be disabled when 4-byte mode is enabled.
Extended Address Register (Configurable)
The device provides an 8-bit volatile register for extended Address Register: it indentifies the extended address
(A31~A24) above 128Mb density by using original 3-byte address.
Extended Address Register (EAR)
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
A31
A30
A29
A28
A27
A26
A25
A24
For the MX25U25635F the A31 to A25 are Don’t Care. During EAR, reading these bits will read as 0. The bit 0 is
default as "0".
Figure 4. Top and Bottom 128M bits
Top 128Mb
01FFFFFFh
EAR<0>= 1
01000000h
Bottom 128Mb
00FFFFFFh
00000000h
EAR<0>= 0 (default)
When under EAR mode, Read, Program, Erase operates in the selected segment by using 3-byte address mode.
For the read operation, the whole array data can be continually read out with one command. Data output starts from
the selected top or bottom 128Mb, but it can cross the boundary. When the last byte of the segment is reached,
the next byte (in a continuous reading) is the first byte of the next segment. However, the EAR (Extended Address
Register) value does not change. The random access reading can only be operated in the selected segment.
The Chip erase command will erase the whole chip and is not limited by EAR selected segment.
P/N: PM1712
15
REV. 1.3, MAR. 17, 2015
MX25U25635F
8-2. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in
command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing 35H command, the QPI mode is enabled.
Figure 5. Enable QPI Sequence
CS#
MODE 3
SCLK
0
1
2
3
4
5
6
7
MODE 0
SIO0
35h
SIO[3:1]
Reset QPI (RSTQIO)
To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note:
For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction as defined
in "Table 19. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V)".
Figure 6. Reset QPI Mode
CS#
SCLK
SIO[3:0]
P/N: PM1712
F5h
16
REV. 1.3, MAR. 17, 2015
MX25U25635F
9. COMMAND DESCRIPTION
Table 5. Command Set
Read/Write Array Commands
Command
(byte)
Mode
READ
FAST READ
(normal read) (fast read data)
2READ
DREAD
(1I 2O read)
(2 x I/O read
command)
4READ
4READ
QREAD
(1I 4O read)
(4 I/O read start
(4 I/O read start
from bottom
from Top 128Mb)
128Mb)
1st byte
SPI
3/4
03 (hex)
SPI
3/4
0B (hex)
SPI
3/4
BB (hex)
SPI
3/4
3B (hex)
SPI/QPI
3/4
EB (hex)
SPI/QPI
3
EA (hex)
SPI
3/4
6B (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
Address Bytes
rd
3 byte
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
5th byte
Data Cycles
Action
n bytes read
out until CS#
goes high
Command
(byte)
PP
(page program)
Mode
SPI/QPI
4PP
(quad page
program)
SPI
Address Bytes
3/4
3/4
02 (hex)
st
1 byte
2nd byte
n bytes read
out until CS#
goes high
n bytes read
n bytes read Quad I/O read Quad I/O read n bytes read
out by 2 x I/O
out by Dual
for bottom
for Top 128Mb out by Quad
until CS# goes output until
128Mb with 6 with 6 dummy
output until
high
CS# goes high dummy cycles
cycles
CS# goes high
SPI/QPI
BE 32K
(block erase
32KB)
SPI/QPI
BE
(block erase
64KB)
SPI/QPI
3/4
3/4
3/4
0
38 (hex)
20 (hex)
52 (hex)
D8 (hex)
60 or C7 (hex)
ADD1
ADD1
ADD1
ADD1
SE
(sector erase)
3rd byte
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
CE
(chip erase)
SPI/QPI
5th byte
Data Cycles
Action
1-256
to program the
selected page
1-256
quad input to
to erase the
to erase the
program the selected sector selected 32K
selected page
block
to erase the to erase whole
selected block
chip
* Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register.
P/N: PM1712
17
REV. 1.3, MAR. 17, 2015
MX25U25635F
Read/Write Array Commands (4 Byte Address Command Set)
Command
(byte)
Mode
READ4B
FAST READ4B
2READ4B
DREAD4B
4READ4B
QREAD4B
Address Bytes
SPI
4
SPI
4
SPI
4
SPI
4
SPI/QPI
4
SPI
4
1st byte
13 (hex)
0C (hex)
BC (hex)
3C (hex)
EC (hex)
6C (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
rd
3 byte
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
5th byte
ADD4
ADD4
ADD4
ADD4
ADD4
ADD4
Dummy
Dummy
Dummy
Dummy
Dummy
th
6 byte
Data Cycles
Action
read data byte by read data byte by read data byte by Read data byte by read data byte by Read data byte by
4 byte address
4 byte address 2 x I/O with 4 byte Dual Output with 4 x I/O with 4 byte Quad Output with
address
4 byte address
address
4 byte address
SPI
4
BE4B
(block erase
64KB)
SPI/QPI
4
BE32K4B
(block erase
32KB)
SPI/QPI
4
SE4B
(Sector erase
4KB)
SPI/QPI
4
12 (hex)
3E (hex)
DC (hex)
5C (hex)
21 (hex)
ADD1
ADD1
ADD1
ADD1
ADD1
rd
ADD2
ADD2
ADD2
ADD2
ADD2
th
4 byte
ADD3
ADD3
ADD3
ADD3
ADD3
5th byte
ADD4
ADD4
ADD4
ADD4
ADD4
1-256
to program the
selected page
with 4byte
address
1-256
Quad input to
program the
selected page
with 4byte
address
to erase the
selected (64KB)
block with 4byte
address
Command
(byte)
PP4B
4PP4B
Address Bytes
SPI/QPI
4
1st byte
2nd byte
Mode
3 byte
th
6 byte
Data Cycles
Action
P/N: PM1712
18
to erase the
to erase the
selected (32KB) selected (4KB)
block with 4byte sector with 4byte
address
address
REV. 1.3, MAR. 17, 2015
MX25U25635F
Register/Setting Commands
Mode
SPI/QPI
SPI/QPI
SPI/QPI
RDCR
(read
configuration
register)
SPI/QPI
1st byte
06 (hex)
04 (hex)
05 (hex)
15 (hex)
Command
(byte)
WREN
WRDI
(write enable) (write disable)
RDSR
(read status
register)
nd
WRSR
RDEAR
WREAR
(write status/ (read extended (write extended
configuration
address
address
register)
register)
register)
SPI/QPI
SPI/QPI
SPI/QPI
01 (hex)
2 byte
Values
3rd byte
Values
C8 (hex)
C5 (hex)
4th byte
5th byte
Data Cycles
Action
sets the (WEL)
resets the
to read out the to read out the
write enable
(WEL) write
values of the values of the
latch bit
enable latch bit status register configuration
register
Command
(byte)
EQIO
(Enable QPI)
RSTQIO
(Reset QPI)
EN4B
(enter 4-byte
mode)
Mode
1st byte
SPI
35 (hex)
QPI
F5 (hex)
SPI/QPI
B7 (hex)
EX4B
(exit 4-byte
mode)
SPI/QPI
E9 (hex)
1-2
to write new
values of the
status/
configuration
register
PGM/ERS
Suspend
(Suspends
Program/
Erase)
SPI/QPI
B0 (hex)
1
read extended write extended
address
address
register
register
PGM/ERS
Resume
(Resumes
Program/
Erase)
SPI/QPI
30 (hex)
DP (Deep
power down)
SPI/QPI
B9 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
Command
(byte)
Mode
1st byte
Entering the
QPI mode
Exiting the QPI to enter 4-byte to exit 4-byte
mode
mode and set mode and clear
4BYTE bit as 4BYTE bit to
"1"
be "0"
RDP (Release
from deep
power down)
SPI/QPI
AB (hex)
SBL
(Set Burst
Length)
SPI/QPI
C0 (hex)
release from
deep power
down mode
to set Burst
length
enters deep
power down
mode
RDFBR
WRFBR
ESFBR
(read fast boot (write fast boot (erase fast
register)
register)
boot register)
SPI
SPI
SPI
16(hex)
17(hex)
18(hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
P/N: PM1712
1-4
4
19
REV. 1.3, MAR. 17, 2015
MX25U25635F
ID/Security Commands
Command
(byte)
Mode
Address Bytes
1st byte
REMS
RDID
RES
(read electronic
QPIID
(read identific- (read electronic
manufacturer & (QPI ID Read)
ation)
ID)
device ID)
SPI
SPI/QPI
SPI
QPI
0
0
0
0
9F (hex)
AB (hex)
90 (hex)
AF (hex)
2nd byte
x
rd
3 byte
x
4th byte
x
Command
(byte)
Mode
Address Bytes
1st byte
ENSO
(enter secured
OTP)
EXSO
(exit secured
OTP)
SPI/QPI
3
5A (hex)
SPI/QPI
0
B1 (hex)
SPI/QPI
0
C1 (hex)
ADD1
x
ADD2
ADD1 (Note 1)
ADD3
5th byte
Action
RDSFDP
outputs JEDEC to read out
output the
ID: 1-byte
1-byte Device Manufacturer
Manufacturer
ID
ID & Device ID
ID & 2-byte
Device ID
ID in QPI
interface
Dummy(8)(Note 4)
Read SFDP
to enter the
to exit the
mode
4K-bit secured 4K-bit secured
OTP mode
OTP mode
RDSCUR
WRSCUR
(read security (write security
register)
register)
SPI/QPI
SPI/QPI
0
0
2B (hex)
2F (hex)
nd
2 byte
3rd byte
4th byte
5th byte
Data Cycles
Action
P/N: PM1712
to read value to set the lockof security
down bit as
register
"1" (once lockdown, cannot
be updated)
20
REV. 1.3, MAR. 17, 2015
MX25U25635F
Reset Commands
Command
(byte)
Mode
st
1 byte
SPI/QPI
SPI/QPI
RST
(Reset
Memory)
SPI/QPI
00 (hex)
66 (hex) (Note 3)
99 (hex) (Note 3)
NOP
RSTEN
(No Operation) (Reset Enable)
nd
2 byte
3rd byte
4th byte
5th byte
Action
Note 1: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 2: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode.
Note 3: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the
reset operation will be disabled.
Note 4: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)"
represents there are 8 clock cycles for the data in. Please note the number after "ADD" are based on 3-byte address
mode, for 4-byte address mode, which will be increased.
P/N: PM1712
21
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/
PP4B, 4PP/4PP4B, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, WRSR, WREAR, WRFBR, ESFBR, and WRSCUR
which are intended to change the device content WEL bit should be set every time after the WREN instruction setting the WEL bit. Please note that a Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending any of those instructions.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
Figure 7. Write Enable (WREN) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
06h
High-Z
SO
Figure 8. Write Enable (WREN) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
06h
SIO[3:0]
P/N: PM1712
22
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
The WEL bit is reset by following situations:
- Power-up
- Reset# pin driven low
- WRDI command completion
- WRSR command completion
- PP/PP4B command completion
- 4PP/4PP4B command completion
- SE/SE4B command completion
- BE32K/BE32K4B command completion
- BE/BE4B command completion
- CE command completion
- PGM/ERS Suspend command completion
- Softreset command completion
- WRSCUR command completion
- WREAR command completion
- WRFBR command completion
- ESFBR command completion
Figure 9. Write Disable (WRDI) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
04h
High-Z
SO
Figure 10. Write Disable (WRDI) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
04h
SIO[3:0]
P/N: PM1712
23
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-3. Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix Manufacturer ID and Device ID are listed as Table 6 ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 11. Read Identification (RDID) Sequence (SPI mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
13 14 15 16 17 18
28 29 30 31
SCLK
Mode 0
Command
SI
9Fh
Manufacturer Identification
SO
High-Z
7
6
5
2
MSB
P/N: PM1712
1
Device Identification
0 15 14 13
3
2
1
0
MSB
24
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in . AC Characteristics. Once in the Standby Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The RDP
instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from deep
power down mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 6 ID
Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design,
please use RDID instruction.
Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in
progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously
in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in
Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
Figure 12. Read Electronic Signature (RES) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Mode 0
Command
SI
ABh
tRES2
3 Dummy Bytes
23 22 21
3
2
1
0
MSB
SO
Electronic Signature Out
High-Z
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
P/N: PM1712
25
Stand-by Mode
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 13. Read Electronic Signature (RES) Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
SCLK
MODE 0
3 Dummy Bytes
Command
SIO[3:0]
X
ABh
X
X
X
X
X
H0
L0
MSB LSB
Data In
Data Out
Stand-by Mode
Deep Power-down Mode
Figure 14. Release from Deep Power-down (RDP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tRES1
7
SCLK
Mode 0
Command
SI
ABh
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 15. Release from Deep Power-down (RDP) Sequence (QPI Mode)
CS#
Mode 3
tRES1
0
1
SCLK
Mode 0
Command
SIO[3:0]
ABh
Deep Power-down Mode
P/N: PM1712
26
Stand-by Mode
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-5. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction is an alternative to the Release from Power-down/Device ID instruction that provides both the
JEDEC assigned manufacturer ID and the specific device ID.
The REMS instruction is very similar to the Release from Power-down/Device ID instruction. The instruction is initiated by driving the CS# pin low and shift the instruction code "90h" followed by two dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for Macronix (C2h) and the Device ID are shifted out on the falling
edge of SCLK with most significant bit (MSB) first. The Device ID values are listed in Table 6 of ID Definitions. If the
one-byte address is initially set to 01h, then the device ID will be read first and then followed by the Manufacturer
ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction is
completed by driving CS# high.
Figure 16. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
4
5
6
7
8
Command
SI
9 10
2 Dummy Bytes
15 14 13
90h
3
2
1
0
High-Z
SO
CS#
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
ADD (1)
SI
7
6
5
4
3
2
1
0
Manufacturer ID
SO
7
6
5
4
3
2
1
Device ID
0
7
MSB
MSB
6
5
4
3
2
1
7
0
MSB
Note: (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
P/N: PM1712
27
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-6. QPI ID Read (QPIID)
User can execute this ID Read (QPIID Read) instruction to identify the Device ID and Manufacturer ID. The
sequence of issue QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes
high. Most significant bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 6. ID Definitions
Command Type
RDID
9Fh
RES
ABh
REMS
90h
QPIID
AFh
P/N: PM1712
MX25U25635F
Manufactory ID
C2
Manufactory ID
C2
Manufactory ID
C2
Memory type
25
Electronic ID
39
Device ID
39
Memory type
25
28
Memory density
39
Memory density
39
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-7. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 17. Read Status Register (RDSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
05h
SI
SO
Status Register Out
High-Z
7
6
5
4
3
2
1
Status Register Out
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 18. Read Status Register (RDSR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
05h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Status Byte Status Byte Status Byte
P/N: PM1712
29
Status Byte
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-8. Read Configuration Register (RDCR)
The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at
any time (even in program/erase/write configuration register condition).
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration Register data out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 19. Read Configuration Register (RDCR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
15h
SI
SO
Configuration register Out
High-Z
7
6
5
4
3
2
1
0
Configuration register Out
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 20. Read Configuration Register (RDCR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
15h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Config. Byte Config. Byte Config. Byte
P/N: PM1712
30
Config. Byte
REV. 1.3, MAR. 17, 2015
MX25U25635F
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
Figure 21. Program/Erase flow with read array data
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Read array data
(same address of PGM/ERS)
No
Verify OK?
Yes
Program/erase successfully
Program/erase
another block?
No
Program/erase fail
Yes
* Issue RDSR to check BP[3:0].
Program/erase completed
P/N: PM1712
31
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 22. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag)
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
RDSCUR command
Yes
P_FAIL/E_FAIL =1 ?
No
Program/erase fail
Program/erase successfully
Program/erase
another block?
No
Yes
* Issue RDSR to check BP[3:0].
Program/erase completed
P/N: PM1712
32
REV. 1.3, MAR. 17, 2015
MX25U25635F
Status Register
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register
progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register
cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the device
will not accept program/erase/write status register instruction. The program/erase command will be ignored if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next program/
erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL bit needs
to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as
defined in Table 2) of the device to against the program/erase instruction without hardware protection mode being set.
To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE), Block
Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0) set to 0,
the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is un-protected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#,
RESET# are enabled. While QE is "1", it performs Quad I/O mode and WP#, RESET# are disabled. In the other
word, if the system goes into four I/O mode (QE=1), the feature of HPM and RESET will be disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
Status Register
bit7
SRWD (status
register write
protect)
bit6
QE
(Quad
Enable)
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
1=Quad
1=status
Enable
register write
(note 1)
(note 1)
0=not Quad
disable
Enable
Non-volatile Non-volatile Non-volatile Non-volatile
bit
bit
bit
bit
Note 1: see the Table 2 "Protected Area Size".
P/N: PM1712
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
(note 1)
(note 1)
Non-volatile
bit
Non-volatile
bit
33
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enable
operation
0=not write 0=not in write
enable
operation
volatile bit
volatile bit
REV. 1.3, MAR. 17, 2015
MX25U25635F
Configuration Register
The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured
after the CR bit is set.
DC bits
The dummy cycle (DC1, DC2) bits are volatile bits, which indicate the number of dummy cycles (as defined in
Dummy Cycle and Frequency Table ) of the device. The default Dummy Cycle bits are DC[1:0]=00. To write the
Dummy cycle bits requires the Write Status Register (WRSR) instruction to be executed. Please note that only
MX25U25635FZ4I-08G supports 133MHz with 10 dummy cycles. The value of DC[1:0] will not be changed when
users try to set all other products' DC[1:0] to 11b.
ODS bit
The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as
defined in Output Driver Strength Table) of the device. The Output Driver Strength is defaulted as 30 Ohms when
delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as
“0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed.
4BYTE Indicator bit
By writing EN4B instruction, the 4BYTE bit may be set as "1" to access the address length of 32-bit for memory area
of higher density (large than 128Mb). The default state is "0" as the 24-bit address mode. The 4BYTE bit may be
cleared by power-off or writing EX4B instruction to reset the state to be "0".
Configuration Register
bit7
DC1
(Dummy
cycle 1)
bit6
DC0
(Dummy
cycle 0)
(note 2)
(note 2)
volatile bit
volatile bit
bit5
bit4
4 BYTE
Reserved
0=3-byte
address
mode
1=4-byte
address
mode
(Default=0)
volatile bit
bit3
bit2
bit1
bit0
TB
ODS 2
ODS 1
ODS 0
(top/bottom (output driver (output driver (output driver
selected)
strength)
strength)
strength)
x
0=Top area
protect
1=Bottom
area protect
(Default=0)
(note 1)
(note 1)
(note 1)
x
OTP
volatile bit
volatile bit
volatile bit
Note 1: see "Output Driver Strength Table"
Note 2: see "Dummy Cycle and Frequency Table (MHz)"
P/N: PM1712
34
REV. 1.3, MAR. 17, 2015
MX25U25635F
Output Driver Strength Table
ODS2
0
0
0
0
1
1
1
1
ODS1
0
0
1
1
0
0
1
1
ODS0
0
1
0
1
0
1
0
1
Description
Reserved
90 Ohms
60 Ohms
45 Ohms
Reserved
20 Ohms
15 Ohms
30 Ohms (Default)
Note
Impedance at VCC/2
Dummy Cycle and Frequency Table (MHz)
DC[1:0]
00 (default)
01
10
11 (Note)
DC[1:0]
00 (default)
01
10
11 (Note)
DC[1:0]
00 (default)
01
10
11 (Note)
Numbers of Dummy
clock cycles
8
6
8
10
Numbers of Dummy
clock cycles
4
6
8
10
Fast Read
108
108
108
133
Dual Output Fast
Read
108
108
108
133
Quad Output Fast
Read
108
84
108
133
Dual IO Fast Read
84
108
108
133
Numbers of Dummy
Quad IO Fast Read
clock cycles
6
84
4
70
8
108
10
133
Note:Please note that only MX25U25635FZ4I-08G can support 133MHz with 10 dummy cycles.
All other products are not able to set DC[1:0] to 11b.
P/N: PM1712
35
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-9. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before
sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write
Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1,
BP0) bits to define the protected area of memory (as shown in Table 2). The WRSR also can set or reset the Quad
enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/
SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot
be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and
not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset.
Figure 23. Write Status Register (WRSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
8
SCLK
Mode 0
SI
SO
command
01h
Status
Register In
7
6
4
5
2
3
Configuration
Register In
1
0 15 14 13 12 11 10 9
8
MSB
High-Z
Note: The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command.
Figure 24. Write Status Register (WRSR) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
Mode 3
SCLK
Mode 0
Mode 0
SR in
Command
SIO[3:0]
P/N: PM1712
01h
H0
36
L0
CR in
H1
L1
REV. 1.3, MAR. 17, 2015
MX25U25635F
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0 and T/B bit, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at
software protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
Table 7. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 2.
P/N: PM1712
37
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 25. WRSR flow
start
WREN command
RDSR command
WEL=1?
No
Yes
WRSR command
Write status register data
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Verify OK?
No
Yes
WRSR successfully
P/N: PM1712
WRSR fail
38
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 26. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCLK
01h
SI
SO
P/N: PM1712
High-Z
39
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-10.Enter 4-byte mode (EN4B)
The EN4B instruction enables accessing the address length of 32-bit for the memory area of higher density (larger
than 128Mb). The device default is in 24-bit address mode; after sending out the EN4B instruction, the bit5 (4BYTE
bit) of configuration register will be automatically set to "1" to indicate the 4-byte address mode has been enabled.
Once the 4-byte address mode is enabled, the address length becomes 32-bit instead of the default 24-bit. There
are three methods to exit the 4-byte mode: writing exit 4-byte mode (EX4B) instruction, Reset or power-off.
All instructions are accepted normally, and just the address bit is changed from 24-bit to 32-bit.
The following command don't support 4-byte address: 4READ for top 128Mb (EAh), RDSFDP, RES and REMS.
The sequence of issuing EN4B instruction is: CS# goes low → sending EN4B instruction to enter 4-byte mode
(automatically set 4BYTE bit as "1") → CS# goes high.
9-11.Exit 4-byte mode (EX4B)
The EX4B instruction is executed to exit the 4-byte address mode and return to the default 3-bytes address mode.
After sending out the EX4B instruction, the bit5 (4BYTE bit) of Configuration register will be cleared to be "0" to
indicate the exit of the 4-byte address mode. Once exiting the 4-byte address mode, the address length will return to
24-bit.
The sequence of issuing EX4B instruction is: CS# goes low→ sending EX4B instruction to exit 4-byte mode
(automatically clear the 4BYTE bit to be "0") → CS# goes high.
P/N: PM1712
40
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-12.Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte or 4-byte
address on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out.
Figure 27. Read Data Bytes (READ) Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Mode 0
SI
command
03h
24-Bit Address
(Note)
23 22 21
3
2
1
0
MSB
SO
Data Out 1
High-Z
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
41
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-13.Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_
READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle.
Figure 28. Read at Higher Speed (FAST_READ) Sequence (SPI Mode)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
5
6
7
8
9 10
Command
SI
SO
4
28 29 30 31
24-Bit Address
(Note)
23 22 21
0Bh
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Configurable
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
4
3
2
1
0
7
MSB
MSB
6
5
4
3
2
1
0
7
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
42
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-14.Dual Output Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing DREAD instruction is: CS# goes low→ sending DREAD instruction→3-byte or 4-byte
address on SIO0→ 8 dummy cycles (default) on SIO0→ data out interleave on SIO1 & SIO0→ to end DREAD operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 29. Dual Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
SCLK
…
Command
SI/SIO0
SO/SIO1
30 31 32
9
3B
…
24 ADD Cycle
A23 A22
…
39 40 41 42 43 44 45
A1 A0
High Impedance
Configurable
Dummy Cycle
Data Out
1
Data Out
2
D6 D4 D2 D0 D6 D4
D7 D5 D3 D1 D7 D5
Note:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
P/N: PM1712
43
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-15.2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 3-byte or 4-byte address interleave on SIO1 & SIO0→ 4 dummy cycles (default) on SIO1 & SIO0→ data out interleave on SIO1 &
SIO0→ to end 2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 30. 2 x I/O Read Mode Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
17 18 19 20 21 22 23 24 25 26 27 28 29 30
Mode 3
SCLK
Mode 0
Command
SI/SIO0
SO/SIO1
BBh
12 ADD Cycles
(Note)
Configurable
Dummy Cycle
Data
Out 1
Data
Out 2
A22 A20 A18
A4 A2 A0
D6 D4 D2 D0 D6 D4 D2 D0
A23 A21 A19
A5 A3 A1
D7 D5 D3 D1 D7 D5 D3 D1
Mode 0
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
44
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-16.Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the QREAD instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single QREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte or 4-byte
address on SI → 8 dummy cycle (Default) → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 31. Quad Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
…
Command
SIO0
SIO1
SIO2
SIO3
29 30 31 32 33
9
SCLK
6B
…
24 ADD Cycles
A23 A22
…
High Impedance
38 39 40 41 42
A2 A1 A0
Configurable
dummy cycles
Data Data Data
Out 1 Out 2 Out 3
D4 D0 D4 D0 D4
D5 D1 D5 D1 D5
High Impedance
D6 D2 D6 D2 D6
High Impedance
D7 D3 D7 D3 D7
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
2. The MSB is on SIO3, which is different from 1 x I/O condition.
P/N: PM1712
45
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-17.4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK, and
data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ.
The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending
4READ instruction→ 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default)
→data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out.
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence
of issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 3-byte or 4-byte address
interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 &
SIO0→ to end 4READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
P/N: PM1712
46
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 32. 4 x I/O Read Mode Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Mode 3
SCLK
Mode 0
Command
6 ADD Cycles
Data
Out 1
Performance
enhance
indicator (Note 1)
Data
Out 2
Data
Out 3
Mode 0
Configurable
Dummy Cycle (Note 3)
EAh/EBh
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0 D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1 D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2 D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3 D7 D3
SIO0
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
5. The MSB is on SIO3 which is different from 1 x I/O condition
Figure 33. 4 x I/O Read Mode Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MODE 3
SCLK
MODE 0
SIO[3:0]
MODE 0
EAh/EBh A5
Data In
A4 A3 A2 A1 A0
24-bit Address
(Note)
X
X
X
X
Configurable
Dummy Cycle
X
X
H0 L0 H1 L1 H2 L2 H3 L3
MSB
Data Out
Notes:
1.Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
2. The MSB is on SIO3 which is different from 1 x I/O condition.
P/N: PM1712
47
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-18.4 Byte Address Command Set
The operation of 4-byte address command set was very similar to original 3-byte address command set. The
only different is all the 4-byte command set request 4-byte address (A31-A0) followed by instruction code. The
command set support 4-byte address including: READ4B, Fast_Read4B, DREAD4B, 2READ4B, QREAD4B,
4READ4B, PP4B, 4PP4B, SE4B, BE32K4B, BE4B. Please note that it is not necessary to issue EN4B command
before issuing any of 4-byte command set.
Figure 34. Read Data Bytes using 4 Byte Address Sequence (READ4B)
CS#
0
1
2
3
4
5
6
7
8
36 37 38 39 40 41 42 43 44 45 46 47
9 10
SCLK
Command
32-bit address
31 30 29
13h
SI
3
2
1
0
MSB
Data Out 1
High Impedance
SO
7
6
5
4
3
Data Out 2
2
1
0
7
MSB
Figure 35. Read Data Bytes at Higher Speed using 4 Byte Address Sequence (Fase_Read4B)
CS#
0
1
2
3
4
5
6
7
8
9 10
36 37 38 39
SCLK
Command
32-bit address
31 30 29
0Ch
SI
3
2
1
0
High Impedance
SO
CS#
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK
Configurable
Dummy cycles
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
4
MSB
P/N: PM1712
3
2
1
0
7
6
MSB
48
5
4
3
2
1
0
7
MSB
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 36. 2 x I/O Fast Read using 4 Byte Address Sequence (2READ4B)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
21 22 23 24 25 26 27 28 29 30 31 32 33 34
Mode 3
SCLK
Mode 0
BCh
SI/SIO0
SO/SIO1
Data
Out 1
Configurable
Dummy Cycle
16 ADD Cycles
Command
Data
Out 2
A30 A28 A26
A4 A2 A0
D6 D4 D2 D0 D6 D4 D2 D0
A31 A29 A27
A5 A3 A1
D7 D5 D3 D1 D7 D5 D3 D1
Mode 0
Figure 37. 4 I/O Fast Read using 4 Byte Address sequence (4READ4B)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Mode 3
SCLK
Mode 0
Command
8 ADD Cycles
Performance
enhance
indicator
Data
Out 1
Data
Out 2
Data
Out 3
Mode 0
Configurable
Dummy Cycle
SIO0
ECh
A28 A24 A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0 D4 D0
SIO1
A29 A25 A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1 D5 D1
SIO2
A30 A26 A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2 D6 D2
SIO3
A31 A27 A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3 D7 D3
P/N: PM1712
49
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-19.Burst Read
This device supports Burst Read in both SPI and QPI mode.
To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte (8-clocks),
following 4 clocks defining wrap around enable with “0h” and disable with“1h”.
The next 4 clocks are to define wrap around depth. Their definitions are as the following table:
Data
00h
01h
02h
03h
1xh
Wrap Around
Yes
Yes
Yes
Yes
No
Wrap Depth
8-byte
16-byte
32-byte
64-byte
X
The wrap around unit is defined within the 256Byte page, with random initial address. It is defined as “wrap-around
mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0h” command
in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command.
To change wrap around depth, it is requried to issue another “C0h” command in which data=“0xh”. QPI “EAh” “EBh”
and SPI "EAh" “EBh” support wrap around feature after wrap around is enabled.
Burst read is supported in both SPI and QPI mode. The device is default without Burst read.
Figure 38. Burst Read - SPI Mode
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
D7
D6
10
11
12
13
14
15
SCLK
Mode 0
SIO
C0h
D5
D4
D3
D2
D1
D0
Figure 39. Burst Read - QPI Mode
CS#
Mode 3
0
1
2
3
SCLK
Mode 0
SIO[3:0]
C0h
H0
MSB
L0
LSB
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
P/N: PM1712
50
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-20.Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles.
Performance enhance mode is supported in both SPI and QPI mode.
In QPI mode, “EAh” “EBh” "ECh" and SPI "EAh" “EBh” "ECh" commands support enhance mode. The performance
enhance mode is not supported in dual I/O mode.
To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered. Input
command "FFh(3-byte address mode)" or data "3FFh(4-byte address mode)" can also exit enhance mode. The system then will leave performance enhance mode and return to normal operation.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of
the first clock as address instead of command cycle.
Another sequence of issuing 4READ instruction especially useful in random access is : CS# goes low→sending 4
READ instruction→3-bytes or 4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling bit P[7:0]→ 4 dummy cycles (Default) →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) → 3-bytes or 4-bytes random access address.
P/N: PM1712
51
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 40. 4 x I/O Read enhance performance Mode Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
n
SCLK
Mode 0
Data
Out 2
Data
Out n
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3
D7 D3
Command
6 ADD Cycles
Data
Out 1
Performance
enhance
indicator (Note 1)
Configurable
Dummy Cycle (Note 2)
EAh/EBh
SIO0
CS#
n+1
...........
n+7 ...... n+9
........... n+13
...........
Mode 3
SCLK
6 ADD Cycles
Performance
enhance
indicator (Note 1)
Data
Out 1
Data
Out 2
Data
Out n
Mode 0
Configurable
Dummy Cycle (Note 2)
SIO0
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3
D7 D3
Notes:
1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
3. The MSB is on SIO3 which is different from 1 x I/O condition.
P/N: PM1712
52
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 41. 4 x I/O Read enhance performance Mode Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
A1
A0
8
9
10
11
12
13
14
15
16
17
H0
L0
H1
L1
SCLK
Mode 0
SIO[3:0]
EAh/EBh A5
A4
A3
A2
X
X
X
X
MSB LSB MSB LSB
P(7:4) P(3:0)
Data In
Data Out
performance
enhance
indicator
Configurable
Dummy Cycle (Note 1)
CS#
n+1
.............
SCLK
Mode 0
SIO[3:0]
A5
A4
A3
A2
A1
X
A0
X
X
H0
L0
H1
L1
MSB LSB MSB LSB
P(7:4) P(3:0)
6 Address cycles
X
Data Out
performance
enhance
indicator
Configurable
Dummy Cycle (Note 1)
Notes:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
2.Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
P/N: PM1712
53
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-21.Performance Enhance Mode Reset
To conduct the Performance Enhance Mode Reset operation in SPI mode, FFh data cycle (8 clocks in 3-byte address mode)/3FFh data cycle (10 clocks in 4-byte address mode), should be issued in 1I/O sequence. In QPI Mode,
FFFFFFFFh data cycle (8 clocks in 3-byte address mode)/FFFFFFFFFFh data cycle (10 clocks in 4-byte address
mode), in 4I/O should be issued.
If the system controller is being Reset during operation, the flash device will return to the standard SPI operation.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 42. Performance Enhance Mode Reset for Fast Read Quad I/O (SPI Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
０ 1
2
3
4
5
6
7
Mode ０
Mode 3
Mode ０
SIO0
FFh
SIO1
Don’t Care
SIO2
Don’t Care
SIO3
Don’t Care
Figure 43. Performance Enhance Mode Reset for Fast Read Quad I/O (QPI Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
SIO[3:0]
P/N: PM1712
０ 1
2
3
4
5
6
Mode ０
7
Mode 3
Mode ０
FFFFFFFFh
54
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 44. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (SPI
Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
0
1
2
3
4
5
6
7
8
Mode 3
9
Mode ０
Mode ０
SIO0
3FFh
SIO1
Don’t Care
SIO2
Don’t Care
SIO3
Don’t Care
Figure 45. Performance Enhance Mode Reset for Fast Read Quad I/O using 4Byte Address Sequence (QPI
Mode)
Mode Bit Reset
for Quad I/O
CS#
Mode 3
SCLK
SIO[3:0]
P/N: PM1712
0
1
2
3
4
5
6
7
Mode ０
8
9
Mode 3
Mode ０
FFFFFFFFFFh
55
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-22.Fast Boot
The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset
without any read instruction.
A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of
delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and
ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register
bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default
number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access.
When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles).
After CS# returns to go high, the device will go back to standard SPI mode and user can start to input command. In
the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output.
Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle,
reset command, or hardware reset operation.
The fast Boot feature can support Single I/O and Quad I/O interface. If the QE bit of Status Register is “0”, the data
is output by Single I/O interface. If the QE bit of Status Register is set to “1”, the data is output by Quad I/O interface.
Fast Boot Register (FBR)
Bits
31 to 4
Description
FBSA (FastBoot Start
Address)
3
x
2 to 1
FBSD (FastBoot Start
Delay Cycle)
0
FBE (FastBoot Enable)
Bit Status
Default State
16 bytes boundary address for the start of boot
FFFFFFF
code access.
1
00: 7 delay cycles
01: 9 delay cycles
10: 11 delay cycles
11: 13 delay cycles
0=FastBoot is enabled.
1=FastBoot is not enabled.
Type
NonVolatile
NonVolatile
11
NonVolatile
1
NonVolatile
Note: If FBSD = 11, the maximum clock frequency for MX25U25635FZ4I-08G. is 133 MHz. All other products can
only support maximum clock frequency 108MHz when FBSD =11.
If FBSD = 10, the maximum clock frequency is 108 MHz
If FBSD = 01, the maximum clock frequency is 84 MHz
If FBSD = 00, the maximum clock frequency is 70 MHz
P/N: PM1712
56
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 46. Fast Boot Sequence (QE=0)
CS#
Mode 3
0
-
-
-
-
-
-
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15
SCLK
Mode 0
Delay Cycles
Don’t care or High Impedance
SI
Data Out 1
High Impedance
SO
7
6
5
4
3
Data Out 2
2
1
0
7
MSB
6
5
4
3
2
MSB
1
0
7
MSB
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
Figure 47. Fast Boot Sequence (QE=1)
CS#
Mode 3
0
-
-
-
-
-
-
-
n
n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9
SCLK
Mode 0
SIO0
SIO1
SIO2
SIO3
Delay Cycles
Data Data
Out 1 Out 2
High Impedance
High Impedance
High Impedance
High Impedance
Data
Out 3
Data
Out 4
4
0
4
0
4
0
4
0
4
5
1
5
1
5
1
5
1
5
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
MSB
Note:
If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
P/N: PM1712
57
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 48. Read Fast Boot Register (RDFBR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
37 38 39 40 41
SCLK
Mode 0
Command
SI
16h
Data Out 1
High-Z
SO
7
6
Data Out 2
5
26 25 24 7
6
MSB
MSB
Figure 49. Write Fast Boot Register (WRFBR) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
8
9 10
37 38 39
SCLK
Mode 0
Command
SI
Fast Boot Register
17h
7
6
5
26 25 24
MSB
High-Z
SO
Figure 50. Erase Fast Boot Register (ESFBR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
SI
SO
P/N: PM1712
Command
18h
High-Z
58
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-23.Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see Table 4 memory organization) is a valid address for
Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the
address byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
sector is protected by BP bits (Block Protect Mode), the Sector Erase (SE) instruction will not be executed on the
sector.
Figure 51. Sector Erase (SE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
24-Bit Address
(Note)
Command
SI
20h
A23 A22
A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 52. Sector Erase (SE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
(Note)
Command
SIO[3:0]
20h A5 A4 A3 A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
59
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-24.Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE32K). Any address of the block (see Table 4 memory organization) is a valid
address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A15] (Am is the most significant address) select the 32KB block address.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte or 4-byte
address on SI→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the
tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If
the Block is protected by BP bits (Block Protect Mode), the Block Erase (BE32K) instruction will not be executed on
the block.
Figure 53. Block Erase 32KB (BE32K) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
Command
SI
24-Bit Address
(Note)
52h
A23 A22
A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 54. Block Erase 32KB (BE32K) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
(Note)
Command
SIO[3:0]
52h
A5 A4 A3 A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
60
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-25.Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to Table 4 memory
organization) is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block
is protected by BP bits (Block Protect Mode), the Block Erase (BE) instruction will not be executed on the block.
Figure 55. Block Erase (BE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
Command
SI
24-Bit Address
(Note)
D8h
A23 A22
A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 56. Block Erase (BE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
(Note)
Command
SIO[3:0]
D8h
A5 A4 A3 A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
61
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-26.Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must
go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
When the chip is under "Block protect (BP) Mode". The Chip Erase (CE) instruction will not be executed, if one (or
more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0".
Figure 57. Chip Erase (CE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
60h or C7h
Figure 58. Chip Erase (CE) Sequence (QPI Mode)
CS#
Mode 3
0
1
SCLK
Mode 0
SIO[3:0]
P/N: PM1712
Command
60h or C7h
62
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-27.Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device programs only the last 256 data bytes sent to the device. The last address byte (the 8 least significant address bits,
A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that exceed page
length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently selected page.
If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page and
previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be programmed at the request address of the page. There will be no effort on the other data bytes of the same page.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte or 4-byte address
on SI→ at least 1-byte on data on SI→ CS# goes high.
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
page is protected by BP bits (Block Protect Mode), the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1712
63
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 59. Page Program (PP) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
1
0
7
6
5
3
2
1
0
2079
2
2078
3
2077
23 22 21
02h
SI
Data Byte 1
24-Bit Address
(Note)
2076
Command
2075
Mode 0
4
1
0
MSB
MSB
2074
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2073
2072
CS#
SCLK
Data Byte 2
7
SI
6
5
4
3
2
Data Byte 3
1
MSB
0
7
6
5
4
3
2
Data Byte 256
1
7
0
MSB
6
5
4
3
2
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 60. Page Program (PP) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
SCLK
Mode 0
Command
SIO[3:0]
02h
Data In
24-Bit Address
(Note)
A5
A4
A3
A2
A1
A0
H0
L0
H1
L1
H2
L2
H3
L3
Data Byte Data Byte Data Byte Data Byte
1
2
3
4
H255 L255
......
Data Byte
256
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
64
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-28.4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and
SIO3 as address and data input, which can improve programmer performance and the effectiveness of application.
The other function descriptions are as same as standard page program.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte or 4-byte address on SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
If the page is protected by BP bits (Block Protect Mode), the Quad Page Program (4PP) instruction will not be
executed.
Figure 61. 4 x I/O Page Program (4PP) Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21
SCLK
Mode 0
Command
Data Data Data Data
Byte 1 Byte 2 Byte 3 Byte 4
6 Address cycle
20 16 12 8
4
0
4
0
4
0
4
0
4
0
SIO1
21 17 13 9
5
1
5
1
5
1
5
1
5
1
SIO2
22 18 14 10
6
2
6
2
6
2
6
2
6
2
SIO3
23 19 15 11
7
3
7
3
7
3
7
3
7
3
SIO0
38h
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM1712
65
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-29.Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction
to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are
ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby
mode.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being
reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and
when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the
byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed.
As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode.
Figure 62. Deep Power-down (DP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tDP
7
SCLK
Mode 0
Command
B9h
SI
Stand-by Mode
Deep Power-down Mode
Figure 63. Deep Power-down (DP) Sequence (QPI Mode)
CS#
Mode 3
0
1
tDP
SCLK
Mode 0
Command
SIO[3:0]
B9h
Stand-by Mode
P/N: PM1712
66
Deep Power-down Mode
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-30.Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While device is in 4K-bit secured
OTPmode, main array access is not available. The additional 4K-bit secured OTP is independent from main array
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that after issuing ENSO command user can only access secure OTP region with standard read or program procedure. Furthermore, once security OTP is lock down, only read related commands are valid.
9-31.Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-32.Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-33.Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction
is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO
bit) for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
P/N: PM1712
67
REV. 1.3, MAR. 17, 2015
MX25U25635F
Security Register
The definition of the Security Register bits is as below:
Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to
"1", if the erase operation fails or the erase region is protected. It will be set to "0", if the last operation is success.
Please note that it will not interrupt or stop any operation in the flash memory.
Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be
set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is
success. Please note that it will not interrupt or stop any operation in the flash memory.
Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use
ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is
set to "1". ESB is cleared to "0" after erase operation resumes.
Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may
use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command,
PSB is set to "1". PSB is cleared to "0" after program operation resumes.
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is
"0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured OTP
area cannot be updated any more. While it is in 4K-bit secured OTP mode, main array access is not allowed.
Table 8. Security Register Definition
bit7
bit6
bit5
bit4
E_FAIL
P_FAIL
Reserved
-
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
-
0=Erase
is not
suspended
1= Erase
suspended
(default=0)
-
Volatile bit
Volatile bit
-
Volatile bit
Reserved
bit3
bit2
ESB
PSB
(Erase
(Program
Suspend bit) Suspend bit)
bit1
bit0
LDSO
Secured OTP
(indicate if
indicator bit
lock-down)
0 = not lock0=Program
down
0 = nonis not
1 = lock-down
factory
suspended
(cannot
lock
1= Program
program/
1 = factory
suspended
erase
lock
(default=0)
OTP)
Non-volatile
Non-volatile
Volatile bit
bit
bit (OTP)
(OTP)
9-34.Block Lock (BP) protection
In Block Lock (BP) protection mode,
Array is protected by BP3~BP0 and BP bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7 of status register that can be set by WRSR command. The protected area definition is shown as Table 2 Protected Area
Sizes, the protected areas are more flexible which may protect various area by setting value of BP0-BP3 bits.
P/N: PM1712
68
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-35.Program Suspend and Erase Suspend
The Suspend instruction interrupts a Page Program, Sector Erase, or Block Erase operation to allow access to the
memory array.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
After the program or erase operation has entered the suspended state, the memory array can be read except for the
page being programmed or the sector or block being erased ("Table 9. Readable Area of Memory While a Program
or Erase Operation is Suspended").
Table 9. Readable Area of Memory While a Program or Erase Operation is Suspended
Suspended Operation
Readable Region of Memory Array
Page Program
All but the Page being programmed
Sector Erase (4KB)
All but the 4KB Sector being erased
Block Erase (32KB)
All but the 32KB Block being erased
Block Erase (64KB)
All but the 64KB Block being erased
When the serial flash receives the Suspend instruction, there is a latency of tPSL or tESL ("Figure 64. Suspend to
Read Latency") before the Write Enable Latch (WEL) bit clears to “0” and the PSB or ESB sets to “1”, after which the
device is ready to accept one of the commands listed in "Table 10. Acceptable Commands During Program/Erase
Suspend after tPSL/tESL" (e.g. FAST READ). Refer to "Table 19. AC CHARACTERISTICS (Temperature = -40°C to
85°C, VCC = 1.65V ~ 2.0V)" for tPSL and tESL timings.
"Table 11. Acceptable Commands During Suspend (tPSL/tESL not required)" lists the commands for which the tPSL
and tESL latencies do not apply. For example, RDSR, RDSCUR, RSTEN, and RST can be issued at any time after
the Suspend instruction.
Security Register bit 2 (PSB) and bit 3 (ESB) can be read to check the suspend status (please refer to "Table 8.
Security Register Definition"). The PSB (Program Suspend Bit) sets to “1” when a program operation is suspended.
The ESB (Erase Suspend Bit) sets to “1” when an erase operation is suspended. The PSB or ESB clears to “0”
when the program or erase operation is resumed.
P/N: PM1712
69
REV. 1.3, MAR. 17, 2015
MX25U25635F
Table 10. Acceptable Commands During Program/Erase Suspend after tPSL/tESL
Command Name
Command Code
READ
03h
FAST READ
0Bh
DREAD
3Bh
QREAD
6Bh
2READ
BBh
4READ
EBh
4READ
EAh
READ4B
13h
FAST READ4B
0Ch
DREAD4B
3Ch
QREAD4B
6Ch
2READ4B
BCh
4READ4B
ECh
RDSFDP
5Ah
RDID
9Fh
QPIID
AFh
REMS
90h
ENSO
B1h
EXSO
C1h
WREN
06h
EQIO
35h
RSTQIO
F5h
SUSPEND
B0h
RESUME
30h
SBL
C0h
RFDBR
16h
PP
02h
4PP
38h
PP4B
12h
4PP4B
3Eh
P/N: PM1712
Suspend Type
Program Suspend
Erase Suspend
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
70
REV. 1.3, MAR. 17, 2015
MX25U25635F
Table 11. Acceptable Commands During Suspend (tPSL/tESL not required)
Command Name
Command Code
WRDI
04h
RDSR
05h
RDCR
15h
RDSCUR
2Bh
RES
ABh
RSTEN
66h
RST
99h
NOP
00h
Suspend Type
Program Suspend
Erase Suspend
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Figure 64. Suspend to Read Latency
tPSL / tESL
CS#
Suspend Command
Read Command
tPSL: Program Latency
tESL: Erase Latency
Figure 65. Resume to Suspend Latency
CS#
Resume
Command
tPRS / tERS
Suspend
Command
tPRS: Program Resume to another Suspend
tERS: Erase Resume to another Suspend
P/N: PM1712
71
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-36-1. Erase Suspend to Program
The “Erase Suspend to Program” feature allows Page Programming while an erase operation is suspended. Page
Programming is permitted in any unprotected memory except within the sector of a suspended Sector Erase
operation or within the block of a suspended Block Erase operation. The Write Enable (WREN) instruction must be
issued before any Page Program instruction.
A Page Program operation initiated within a suspended erase cannot itself be suspended and must be allowed to
finish before the suspended erase can be resumed. The Status Register can be polled to determine the status of
the Page Program operation. The WEL and WIP bits of the Status Register will remain “1” while the Page Program
operation is in progress and will both clear to “0” when the Page Program operation completes.
Figure 67. Suspend to Program Latency
CS#
Suspend Command
tPSL / tESL
Program Command
tPSL: Program Latency
tESL: Erase Latency
9-36.Program Resume and Erase Resume
The Resume instruction resumes a suspended Page Program, Sector Erase, or Block Erase operation. Before
issuing the Resume instruction to restart a suspended erase operation, make sure that there is no Page Program
operation in progress.
Immediately after the serial flash receives the Resume instruction, the WEL and WIP bits are set to “1” and the PSB
or ESB is cleared to “0”. The program or erase operation will continue until finished ("Figure 66. Resume to Read
Latency") or until another Suspend instruction is received. A resume-to-suspend latency of tPRS or tERS must be
observed before issuing another Suspend instruction ("Figure 65. Resume to Suspend Latency").
Please note that the Resume instruction will be ignored if the serial flash is in “Performance Enhance Mode”. Make
sure the serial flash is not in “Performance Enhance Mode” before issuing the Resume instruction.
Figure 66. Resume to Read Latency
tSE/tBE/tBE32K/tPP
CS#
P/N: PM1712
Read Command
Resume Command
72
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-37.No Operation (NOP)
The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-38.Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST)
command. It returns the device to standby mode. All the volatile bits and settings will be cleared then, which makes
the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. For details, please refer to "Table 15-2. Reset Timing(Other Operation)" for tREADY2.
P/N: PM1712
73
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 68. Software Reset Recovery
Stand-by Mode
66
CS#
99
tREADY2
Mode
Note: Refer to "Table 15-2. Reset Timing-(Other Operation)" for tREADY2.
Figure 69. Reset Sequence (SPI mode)
tSHSL
CS#
SCLK
Mode 3
Mode 3
Mode 0
Mode 0
Command
Command
99h
66h
SIO0
Figure 70. Reset Sequence (QPI mode)
tSHSL
CS#
MODE 3
MODE 3
MODE 3
SCLK
MODE 0
SIO[3:0]
P/N: PM1712
Command
MODE 0
66h
Command
MODE 0
99h
74
REV. 1.3, MAR. 17, 2015
MX25U25635F
9-39.Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC Standard, JESD216.
Figure 71. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
5Ah
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
3
2
1
0
7
MSB
MSB
P/N: PM1712
4
75
6
5
4
3
2
1
0
7
MSB
REV. 1.3, MAR. 17, 2015
MX25U25635F
Table 12. Signature and Parameter Identification Data Values
SFDP Table below is for MX25U25635FMI-10G, MX25U25635FZ2I-10G, MX25U25635FZ4I-10G and
MX25U25635FZ4I-08G
Description
SFDP Signature
Comment
Fixed: 50444653h
Add (h) DW Add Data (h/b) Data
(Byte)
(Bit)
(Note1)
(h)
00h
07:00
53h
53h
01h
15:08
46h
46h
02h
23:16
44h
44h
03h
31:24
50h
50h
SFDP Minor Revision Number
Start from 00h
04h
07:00
00h
00h
SFDP Major Revision Number
Start from 01h
This number is 0-based. Therefore,
0 indicates 1 parameter header.
05h
15:08
01h
01h
06h
23:16
01h
01h
07h
31:24
FFh
FFh
00h: it indicates a JEDEC specified
header.
08h
07:00
00h
00h
Start from 00h
09h
15:08
00h
00h
Start from 01h
0Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
0Bh
31:24
09h
09h
0Ch
07:00
30h
30h
0Dh
15:08
00h
00h
0Eh
23:16
00h
00h
0Fh
31:24
FFh
FFh
it indicates Macronix manufacturer
ID
10h
07:00
C2h
C2h
Start from 00h
11h
15:08
00h
00h
Start from 01h
12h
23:16
01h
01h
How many DWORDs in the
Parameter table
13h
31:24
04h
04h
14h
07:00
60h
60h
15h
15:08
00h
00h
16h
23:16
00h
00h
17h
31:24
FFh
FFh
Number of Parameter Headers
Unused
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of JEDEC Flash
Parameter table
Unused
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of Macronix Flash
Parameter table
Unused
P/N: PM1712
76
REV. 1.3, MAR. 17, 2015
MX25U25635F
Table 13. Parameter Table (0): JEDEC Flash Parameter Tables
SFDP Table below is for MX25U25635FMI-10G, MX25U25635FZ2I-10G, MX25U25635FZ4I-10G and
MX25U25635FZ4I-08G
Description
Comment
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction Required 0: not required
1: required 00h to be written to the
for Writing to Volatile Status
status register
Registers
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
01b
02
1b
03
0b
30h
0: use 50h opcode,
1: use 06h opcode
Write Enable Opcode Select for
Note: If target flash status register is
Writing to Volatile Status Registers
nonvolatile, then bits 3 and 4 must
be set to 00b.
Contains 111b and can never be
Unused
changed
4KB Erase Opcode
01:00
31h
Data
(h)
E5h
04
0b
07:05
111b
15:08
20h
16
1b
18:17
01b
19
0b
20
1b
20h
(1-1-2) Fast Read (Note2)
0=not support 1=support
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
Clocking
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
(1-2-2) Fast Read
0=not support 1=support
(1-4-4) Fast Read
0=not support 1=support
21
1b
(1-1-4) Fast Read
0=not support 1=support
22
1b
23
1b
33h
31:24
FFh
37h:34h
31:00
0FFF FFFFh
0=not support 1=support
32h
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait
states (Note3)
(1-4-4) Fast Read Number of
Mode Bits (Note4)
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(1-4-4) Fast Read Opcode
(1-1-4) Fast Read Number of Wait
states
(1-1-4) Fast Read Number of
Mode Bits
39h
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(1-1-4) Fast Read Opcode
P/N: PM1712
38h
3Ah
3Bh
77
04:00
0 0100b
07:05
010b
15:08
EBh
20:16
0 1000b
23:21
000b
31:24
6Bh
F3h
FFh
44h
EBh
08h
6Bh
REV. 1.3, MAR. 17, 2015
MX25U25635F
SFDP Table below is for MX25U25635FMI-10G, MX25U25635FZ2I-10G, MX25U25635FZ4I-10G and
MX25U25635FZ4I-08G
Add (h) DW Add Data (h/b)
Description
Comment
(Byte)
(Bit)
(Note1)
(1-1-2) Fast Read Number of Wait 0 0000b: Not supported; 0 0100b: 4
04:00
0 1000b
states
0 0110b: 6; 0 1000b: 8
3Ch
(1-1-2) Fast Read Number of
Mode Bits:
07:05
000b
Mode Bits
000b: Not supported; 010b: 2 bits
(1-1-2) Fast Read Opcode
(1-2-2) Fast Read Number of Wait
states
(1-2-2) Fast Read Number of
Mode Bits
3Dh
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(1-2-2) Fast Read Opcode
(2-2-2) Fast Read
3Fh
0=not support 1=support
Unused
(4-4-4) Fast Read
3Eh
0=not support 1=support
40h
Unused
15:08
3Bh
20:16
0 0100b
23:21
000b
31:24
BBh
00
0b
03:01
111b
04
1b
07:05
111b
Data
(h)
08h
3Bh
04h
BBh
FEh
Unused
43h:41h
31:08
FFh
FFh
Unused
45h:44h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
47h
31:24
FFh
FFh
49h:48h
15:00
FFh
FFh
20:16
0 0100b
23:21
010b
4Bh
31:24
EBh
EBh
4Ch
07:00
0Ch
0Ch
4Dh
15:08
20h
20h
4Eh
23:16
0Fh
0Fh
4Fh
31:24
52h
52h
50h
07:00
10h
10h
51h
15:08
D8h
D8h
52h
23:16
00h
00h
53h
31:24
FFh
FFh
(2-2-2) Fast Read Number of Wait
states
(2-2-2) Fast Read Number of
Mode Bits
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(2-2-2) Fast Read Opcode
Unused
(4-4-4) Fast Read Number of Wait
states
(4-4-4) Fast Read Number of
Mode Bits
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(4-4-4) Fast Read Opcode
Sector Type 1 Size
Sector/block size = 2^N bytes (Note5)
0Ch: 4KB; 0Fh: 32KB; 10h: 64KB
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size = 2^N bytes
00h: N/A; 0Fh: 32KB; 10h: 64KB
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size = 2^N bytes
00h: N/A; 0Fh: 32KB; 10h: 64KB
Sector Type 3 erase Opcode
Sector Type 4 Size
00h: N/A, This sector type doesn't
exist
Sector Type 4 erase Opcode
P/N: PM1712
78
46h
4Ah
00h
44h
REV. 1.3, MAR. 17, 2015
MX25U25635F
Table 14. Parameter Table (1): Macronix Flash Parameter Tables
SFDP Table below is for MX25U25635FMI-10G, MX25U25635FZ2I-10G, MX25U25635FZ4I-10G and
MX25U25635FZ4I-08G
Description
Vcc Supply Maximum Voltage
Vcc Supply Minimum Voltage
Comment
2000h=2.000V
2700h=2.700V
3600h=3.600V
1650h=1.650V, 1750h=1.750V
2250h=2.250V, 2300h=2.300V
2350h=2.350V, 2650h=2.650V
2700h=2.700V
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
Data
(h)
61h:60h
07:00
15:08
00h
20h
00h
20h
63h:62h
23:16
31:24
50h
16h
50h
16h
H/W Reset# pin
0=not support 1=support
00
1b
H/W Hold# pin
0=not support 1=support
01
0b
Deep Power Down Mode
0=not support 1=support
02
1b
S/W Reset
0=not support 1=support
03
1b
S/W Reset Opcode
Reset Enable (66h) should be
issued before Reset Opcode
Program Suspend/Resume
0=not support 1=support
12
1b
Erase Suspend/Resume
0=not support 1=support
13
1b
14
1b
15
1b
66h
23:16
C0h
C0h
67h
31:24
64h
64h
65h:64h
Unused
Wrap-Around Read mode
0=not support 1=support
Wrap-Around Read mode Opcode
11:04
1001 1001b
F99Dh
(99h)
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
Individual block lock
0=not support 1=support
00
0b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
01
1b
09:02
1111 1111b
(FFh)
10
1b
11
1b
Individual block lock Opcode
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
Secured OTP
0=not support 1=support
Read Lock
0=not support 1=support
12
0b
Permanent Lock
0=not support 1=support
13
0b
Unused
15:14
11b
Unused
31:16
FFh
FFh
31:00
FFh
FFh
Unused
6Bh:68h
6Fh:6Ch
CFFEh
MX25U25635FMI-10G-SFDP_2015-03-10,SF10
P/N: PM1712
79
REV. 1.3, MAR. 17, 2015
MX25U25635F
Note 1:h/b is hexadecimal or binary.
Note 2:(x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3:Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4:Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5:4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6:All unused and undefined area data is blank FFh for SFDP Tables that are defined in Parameter
Identification Header. All other areas beyond defined SFDP Table are reserved by Macronix.
P/N: PM1712
80
REV. 1.3, MAR. 17, 2015
MX25U25635F
10. RESET
Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at
the following states:
- Standby mode
- All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on.
- 3-byte address mode
If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data
could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to
minimum.
Figure 72. RESET Timing
CS#
tRHSL
SCLK
tRH tRS
RESET#
tRLRH
tREADY1 / tREADY2
Table 15-1. Reset Timing-(Power On)
Symbol Parameter
tRHSL Reset# high before CS# low
tRS
Reset# setup time
tRH
Reset# hold time
tRLRH Reset# low pulse width
tREADY1 Reset Recovery time
Min.
10
15
15
10
35
Typ.
Max.
Unit
us
ns
ns
us
us
Min.
10
15
15
10
40
40
310
12
25
100
40
Typ.
Max.
Unit
us
ns
ns
us
us
us
us
ms
ms
ms
ms
Table 15-2. Reset Timing-(Other Operation)
Symbol
tRHSL
tRS
tRH
tRLRH
Parameter
Reset# high before CS# low
Reset# setup time
Reset# hold time
Reset# low pulse width
Reset Recovery time (During instruction decoding)
Reset Recovery time (for read operation)
Reset Recovery time (for program operation)
tREADY2 Reset Recovery time(for SE operation)
Reset Recovery time (for BE64K/BE32KB operation)
Reset Recovery time (for Chip Erase operation)
Reset Recovery time (for WRSR operation)
P/N: PM1712
81
REV. 1.3, MAR. 17, 2015
MX25U25635F
11. POWER-ON STATE
The device is at the following states after power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage until the VCC reaches the following levels:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response
to any command. The data corruption might occur during this stage if a write, program, erase cycle is in progress.
P/N: PM1712
82
REV. 1.3, MAR. 17, 2015
MX25U25635F
12. ELECTRICAL SPECIFICATIONS
Table 16. ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
Industrial grade
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to 2.5V
NOTICE:
1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns.
Figure 74. Maximum Positive Overshoot Waveform
Figure 73. Maximum Negative Overshoot Waveform
20ns
0V
VCC+1.0V
-1.0V
2.0V
20ns
Table 17. CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol Parameter
CIN
COUT
P/N: PM1712
Min.
Typ.
Max.
Unit
Input Capacitance
8
pF
VIN = 0V
Output Capacitance
8
pF
VOUT = 0V
83
Conditions
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 75. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing reference level
0.8VCC
Output timing reference level
0.7VCC
AC
Measurement
Level
0.3VCC
0.2VCC
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 76. OUTPUT LOADING
25K ohm
DEVICE UNDER
TEST
CL
+1.8V
25K ohm
CL=30pF Including jig capacitance
P/N: PM1712
84
REV. 1.3, MAR. 17, 2015
MX25U25635F
Table 18. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V)
Symbol Parameter
Notes
Min.
Typ.
Max.
Units Test Conditions
ILI
Input Load Current
1
±2
uA
VCC = VCC Max,
VIN = VCC or GND
ILO
Output Leakage Current
1
±2
uA
VCC = VCC Max,
VOUT = VCC or GND
ISB1
VCC Standby Current
1
20
100
uA
VIN = VCC or GND,
CS# = VCC
ISB2
Deep Power-down
Current
1.5
20
uA
VIN = VCC or GND,
CS# = VCC
25
mA
f=133MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
(for MX25U25635FZ4I-08G
only)
20
mA
f=108Hz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
15
mA
f=84MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
20
25
mA
10
20
mA
1
20
25
mA
Erase in Progress,
CS#=VCC
1
20
25
mA
Erase in Progress,
CS#=VCC
-0.5
0.3VCC
V
0.7VCC
VCC+0.4
V
0.2
V
IOL = 100uA
V
IOH = -100uA
ICC1
VCC Read
VIL
VCC Program Current
(PP)
VCC Write Status
Register (WRSR) Current
VCC Sector/Block (32K,
64K) Erase Current
(SE/BE/BE32K)
VCC Chip Erase Current
(CE)
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
ICC2
ICC3
ICC4
ICC5
1
1
VCC-0.2
Program in Progress,
CS# = VCC
Program status register in
progress, CS#=VCC
Notes:
1. Typical values at VCC = 1.8V, T = 25°C. These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
P/N: PM1712
85
REV. 1.3, MAR. 17, 2015
MX25U25635F
Table 19. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V)
Symbol
Alt. Parameter
Min.
Clock Frequency for the following instructions:
fSCLK
fC FAST_READ, RDSFDP, PP, SE, BE, CE, DP, RES, RDP,
D.C.
WREN, WRDI, RDID, RDSR, WRSR
fRSCLK
fR Clock Frequency for READ instructions
fT Clock Frequency for 2READ instructions
fTSCLK
fQ Clock Frequency for 4READ instructions (5)
Others (fSCLK)
4.5/3.3 (7)
tCH(1)
tCLH Clock High Time
Normal Read (fRSCLK)
7
(7)
Others
(fSCLK)
4.5/3.3
tCL(1)
tCLL Clock Low Time
Normal Read (fRSCLK)
7
tCLCH(2)
Clock Rise Time (peak to peak)
0.1
tCHCL(2)
Clock Fall Time (peak to peak)
0.1
tSLCH tCSS CS# Active Setup Time (relative to SCLK)
5
tCHSL
CS# Not Active Hold Time (relative to SCLK)
7
tDVCH tDSU Data In Setup Time
4
tCHDX
tDH Data In Hold Time
3
tCHSH
CS# Active Hold Time (relative to SCLK)
5
tSHCH
CS# Not Active Setup Time (relative to SCLK)
5
Read
7
tSHSL tCSH CS# Deselect Time
Write/Erase/Program
30
tSHQZ(2) tDIS Output Disable Time
Loading: 30pF
Clock Low to Output Valid
tCLQV
tV
Loading: 30pF/15pF
Loading: 15pF
tCLQX
tHO Output Hold Time
1
(3)
tWHSL
Write Protect Setup Time
20
tSHWL(3)
Write Protect Hold Time
100
tDP(2)
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic Signature
(2)
tRES1
Read
tRES2(2)
CS# High to Standby Mode with Electronic Signature Read
tW
Write Status/Configuration Register Cycle Time
tWREAR
Write Extended Address Register
tBP
Byte-Program
tPP
Page Program Cycle Time
tSE
Sector Erase Cycle Time
tBE32
Block Erase (32KB) Cycle Time
tBE
Block Erase (64KB) Cycle Time
tCE
Chip Erase Cycle Time
tESL(8)
Erase Suspend Latency
(8)
tPSL
Program Suspend Latency
tPRS(9)
Latency between Program Resume and next Suspend
0.85
(10)
tERS
Latency between Erase Resume and next Suspend
0.85
P/N: PM1712
86
Typ.
Max.
Unit
108 (6)
MHz
55
84 (6)
84 (6)
10
MHz
MHz
MHz
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
10
us
10
40
us
ms
ns
us
ms
ms
ms
ms
s
us
us
us
us
8
8
6
40
12
1
45
200
400
200
100
200
30
3
200
1000
2000
320
20
20
REV. 1.3, MAR. 17, 2015
MX25U25635F
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25°C. Not 100% tested.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Test condition is shown as Figure 75 and Figure 76.
5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to program the whole 256 bytes or only a few bytes between 1~256 bytes.
6. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison". Please note that
only MX25U25635FZ4I-08G support 10 dummy cycles, which provide maximum clock rate=133MHz.
7. Please note that only MX25U25635FZ4I-08G supports tCH/tCL=3.3 ns. All other products can only support 4.5ns.
8. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0".
9. For tPRS, minimum timing must be observed before issuing the next program suspend command. However, a
period equal to or longer than the typical timing is required in order for the program operation to make progress.
(The flash memory can accept another suspend command just after 0.85us from suspend resume. However, if
the timing is less than 100us from Program Suspend Resume, the content of flash memory might not be changed
before the suspend command has been issued.)
10. For tERS, minimum timing must be observed before issuing the next erase suspend command. However, a
period equal to or longer than the typical timing is required in order for the erase operation to make progress.
(The flash memory can accept another suspend command just after 0.85us from suspend resume. However, if
the timing is less than 200us from Erase Suspend Resume, the content of flash memory might not be changed
before the suspend command has been issued.)
P/N: PM1712
87
REV. 1.3, MAR. 17, 2015
MX25U25635F
13. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in Figure 77 and Figure 78 are for the supply voltages and the control signals at device powerup and power-down. If the timing in the figures is ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 77. AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tSLCH
tCHSL
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
SI
High Impedance
SO
Symbol
tVR
tCLCH
Parameter
VCC Rise Time
Notes
1
Min.
20
Max.
500000
Unit
us/V
Notes :
1.Sampled, not 100% tested.
2.For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
AC CHARACTERISTICS.
P/N: PM1712
88
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 78. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
Figure 79. Power-up Timing
VCC
VCC(max)
Chip Selection is Not Allowed
VCC(min)
tVSL
Device is fully accessible
VWI
time
Note: VCC (max.) is 2.0V and VCC (min.) is 1.65V.
Table 20. Power-Up Timing and VWI Threshold
Symbol
tVSL(1)
VWI(1)
Parameter
VCC(min) to CS# low (VCC Rise Time)
Write Inhibit Voltage
Min.
1500
1
Max.
1.4
Unit
us
V
Note: 1. These parameters are characterized only.
P/N: PM1712
89
REV. 1.3, MAR. 17, 2015
MX25U25635F
Figure 80. Power Up/Down and Voltage Drop
For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please
check the table below for more detail.
VCC
VCC (max.)
Chip Select is not allowed
VCC (min.)
tVSL
Full Device
Access
Allowed
VPWD (max.)
tPWD
Time
Table 21. Power-Up/Down and Voltage Drop
Symbol
tPWD
Parameter
VCC voltage needed to below VPWD for ensuring initialization
will occur
The minimum duration for ensuring initialization will occur
tVSL
VPWD
Min.
Max.
Unit
0.9
V
300
us
VCC(min.) to device operation
1.5
ms
tVR
VCC Rise Time
20
500000
us/V
VCC
VCC Power Supply
1.65
2.0
V
13-1.INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM1712
90
REV. 1.3, MAR. 17, 2015
MX25U25635F
14. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ.(1)
Min.
Max.(2)
Unit
40
ms
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
45
200
ms
Block Erase Cycle Time (32KB)
200
1000
ms
Block Erase Cycle Time (64KB)
400
2000
ms
Chip Erase Cycle Time
200
320
s
30
us
3
ms
Byte Program Time (via page program command)
12
Page Program Time
1
Erase/Program Cycle
(5)
(5)
100,000
cycles
Notes:
1. Typical erase assumes the following conditions: 25°C, 1.8V, and all zero pattern.
2. Under worst conditions of 85°C and 1.65V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command.
4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=1.8V, and 100K cycle with 90% confidence level.
5. Typical program assumes the following conditions: 25°C, 1.8V, and checkerboard pattern.
15. DATA RETENTION
Parameter
Condition
Min.
Data retention
55˚C
20
Max.
Unit
years
16. LATCH-UP CHARACTERISTICS
Min.
Max.
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
2 VCCmax
Input Voltage with respect to GND on SO
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 1.8V, one pin at a time.
P/N: PM1712
91
REV. 1.3, MAR. 17, 2015
MX25U25635F
17. ORDERING INFORMATION
PART NO.
CLOCK (MHz)
TEMPERATURE
PACKAGE
MX25U25635FMI-10G
108
-40°C~85°C
16-SOP (300mil)
MX25U25635FZ2I-10G
108
-40°C~85°C
8-WSON (8x6mm)
MX25U25635FZ4I-10G
108
-40°C~85°C
8-WSON
(8x6mm 3.4 x 4.3 EP)
MX25U25635FZ4I-08G
133
-40°C~85°C
8-WSON
(8x6mm 3.4 x 4.3 EP)
MX25U25635FBBI-10G
108
-40°C~85°C
31-Ball WLCSP
P/N: PM1712
92
Remark
Ball Diameter 0.30mm
REV. 1.3, MAR. 17, 2015
MX25U25635F
18. PART NAME DESCRIPTION
MX 25
U 25635F Z2
I
10 G
OPTION:
G: RoHS Compliant and Halogen-free
SPEED:
10: 108MHz
08: 133MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M: 16-SOP(300mil)
Z2: 8-WSON
Z4：8-WSON (3.4 x 4.3 EP)
BB: WLCSP, Ball Diameter 0.30mm
DENSITY & MODE:
25635F: 256Mb
TYPE:
U: 1.8V
DEVICE:
25: Serial Flash
P/N: PM1712
93
REV. 1.3, MAR. 17, 2015
MX25U25635F
19. PACKAGE INFORMATION
P/N: PM1712
94
REV. 1.3, MAR. 17, 2015
MX25U25635F
P/N: PM1712
95
REV. 1.3, MAR. 17, 2015
MX25U25635F
P/N: PM1712
96
REV. 1.3, MAR. 17, 2015
MX25U25635F
Title: Package Outline for 31Ball WLCSP (BALL DIAMETER 0.30MM)
RESET#/SIO3
1
e
2
1
e
2
1
e 12 e
2
Please contact local Macronix sales channel for complete package dimensions.
P/N: PM1712
97
REV. 1.3, MAR. 17, 2015
MX25U25635F
20. REVISION HISTORY
Revision No. Description
Page
Date
0.01
1. Added RDCR, DREAD, QREAD, FastBoot, Advanced Sector P30,43,45,56, JUN/15/2012
Protection, RDSFDP
P71,83~88
2. Modified Write Protection Selection (WPSEL), Power-on State, P68,69,90,98,
Power-up Timing, Ordering Information table
P100
3. Modified Maximum Clock frequency, tCE, tVSL, tCH, tCL, tCLQXP4,6,94,98
4. Added new package: 8-land WSON (8x6 mm 3.4 x 4.3 EP)
P5,7,100,101,
P104
5. Revised SFDP table.
P85~86
1.0
1. Removed "Advance Information" P4
DEC/14/2012
2. Modified 16-SOP pin descriptions
P7
3. Added ICC1 (max.) 25mA (f=133MHz)P93
4. Modified fRSCLK, tCH and tCL
P94
5. Modified tVSL (min.) from 800us to 1500us
P96
6. Added "Power Up/Down and Voltage Drop"
P97
7. Modified content P9,15,16,19,21,23,29-32,
P38,40,45,47,52,58,68,
P72-76,78-82,87
1.1
1. Removed Write Protection Selection (WPSEL), P19,23,68,77 MAR/06/2013
Advanced Sector Protection
2. Modified VIL, RESET Timing table
P72,79,83
3. Modified content
P6,34,56,90
4. Added MX25U25635FZ4I-08G
P35,56,90,91
1.2
1. Added FFh at 6Fh:6Ch Addresses in SFDP Table
P77
NOV/28/2013
2. Modified VCC to Ground Potential
P81
3. Updated ISB1, ISB2, and ICC3 in DC Table
P83
4. Updated tPP, tSE, tBE32 and tBE in AC Table
P84
5. Updated Erase time and Page Program time
P89
6. Removed Advanced Information of MX25U25635FZ4I-08GP90
1.3
1. Updated Min. Data In Setup/Hold Time
2. Updated Block Diagram
3. Revised WP# description
4. Updated suspend/resume descriptions
5. Added 31-ball WLCSP product information
6. Updated Note 6 of SFDP Tables
P/N: PM1712
98
P86
MAR/17/2015
P8
P7
P69-73,86-87
P5,7,92-93,97
P80
REV. 1.3, MAR. 17, 2015
MX25U25635F
Except for customized products which have been expressly identified in the applicable agreement, Macronix's
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household applications only, and not for use in any applications which may, directly or indirectly, cause death,
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distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2011~2015. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,
NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names
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For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
99