Innovative CooliR2™ Packaging Platform with Dual-Sided Cooling Advances HEVs and EVs Progress Jack Marcinkowski Sr. Marketing and Applications Manager Automotive Products Business Unit Apr. 4, 2013 rev.1.2 COMPANY CONFIDENTIAL 1 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 2 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 3 Challenges for the HEV and EV traction inverters General trends and requirements for HEV/EV power electronics 15 Size, volume +54% 10 Power density, kW/L Weight Cost, $/kW 5 Cost -60% Reliability 0 2010 2015 2020 USCAR targets R&D Status Targets Change Coolant Temperature 2010 90 oC 2015 105 oC 2020 105 oC + 15 oC Cost, $/kW Specific power, kW/kg Power density, kW/L <7.9 >10.8 >8.7 <5.0 >12.0 >12.0 <3.3 >14.1 >13.4 > - 60% > +30% > +54% Source: The United States Council for Automotive Research LLC (USCAR)—U.S. DRIVE Electrical & Electronics Tech Team (EETT). COMPANY CONFIDENTIAL 4 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 5 CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices A comprehensive and innovative approach Optimized devices for inverters is needed to address the challenges of CooliRIGBT™ and CooliRDiode™ modern HEV/EV inverters. International Rectifier’s CooliR™ high-power • Large die • Reduced conduction and switching losses • Switching frequency up to 20kHz • Robust packaging platform addresses all challenges. Typical switching waveforms Turn-on Turn-off • • • • Soft, fast recovery low turn-on losses No tail - low turn-off losses (e.g. IGBT – 12x12 mm) 680V High breakdown voltage Increased temperature TjMAX = 175oC Short circuit capability 6us Square RBSOA • Wirebondless interconnection • Solderable Front Metal (SFM) • Dual-sided cooling Vdc = 400V, Ic = 400A, 100ns/div COMPANY CONFIDENTIAL 6 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 7 COOLiR2™ Packaging Platform for HEV/EV Inverters Objective: Packaging Levels: Create an innovative power semiconductor packaging concept • optimized for HEV/EV traction inverter applications • maximizing the utilization of semiconductor devices Performance objective Design goal High current density High current interconnections High power density Effective heat removal Max. utilization of voltage rating Low inductance Low losses Fast switching speed High operating temperature Increased max. junction temperature COMPANY CONFIDENTIAL 8 COOLiR2™ Packaging Platform for HEV/EV Inverters Packaging Levels: 1. Bare DIE 2. Packaged DIE 3. Module breakthrough & paradigm shift COMPANY CONFIDENTIAL 9 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 10 COOLiR2™ Packaging Platform for HEV/EV Inverters CooliR2Die™ - very large die “discrete” SMT component Substrate • The 680V/300A CooliR2Die™ package dimensions: 12.5mm x 29mm x 1mm • Two types of CooliR2DIE™ developed to simplify construction of different power circuit topologies • Different substrates (e.g. DBC) can be used as the carrier for the CooliR2DIE™ CooliR2DIE™ building blocks Bridging the gap between “discretes” and modules COMPANY CONFIDENTIAL 11 COOLiR2™ Packaging Platform for HEV/EV Inverters Power circuit construction using CooliR2Die™ CooLiR2Bridge™ CooliR2DIE™ CooliR2DIE™ CooLiR2DIE™ Power Switch on Module Substrate Cross-Section 2 CooliR DIE™ (Top DBC) Module (Bottom DBC/Substrate) • • • • Die Wirebonds eliminated Parasitic R and L reduced Compatibility with different die attach techniques including soldering or sintering CooliR2DIE™ assemblies can be over-molded or protected by a gel-filled housing COMPANY CONFIDENTIAL 12 COOLiR2™ Packaging Platform for HEV/EV Inverters Power circuit construction using CooliR2Die™ Out B- CooliR2DIE™ CooliR2DIE™ CooliR2DIE™ CooliR2DIE™ CooliR2DIE™ CooliR2DIE™ CooliR2DIE™ CooliR2DIE™ B- CooliR2DIE™ CooliR2DIE™ + CooliR2DIE™ - B+ B+ CooliR2DIE™ Input Phase Half-bridge, Buck or Boost Double current rating 3-Phase Bridge FLEXIBILITY and CONVENIENCE of CooliR2Die™ • parallelable higher current rating • pre-packaged no need to handle the super-thin bare die • fully tested higher yield of final assembly • • • • Various circuit topologies possible High power circuits implementation without the use of power modules Compatibility with baseplates or heatsinks Cooled on one or two sides COMPANY CONFIDENTIAL 13 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 14 COOLiR2™ - Electrical Performance • Resistance of wirebonds vs. wirebond-less interconnections Approx. 20 wires with 20mil dia. are needed to achieve the low resistance of CooliR2DIE™ (more than could be placed on the die) 12 mm 20 mil. bondwire resistance is approx. 2.6 mΩ ea. 20 mm die CooliR2Bridge™ total resistance (incl. DBC and leadframe) • • Approx. 0.5 mOhm (from DC+ to DC- terminals) Approx. 1 mOhm for wirebonded modules 20 mm 0.3 mm die Copper plane resistance is approx. 0.13 mΩ 0.5 mΩ of additional wirebonds resistance at 300A results in 0.15V more voltage drop across the module This causes 45W of additional power dissipation per phase (approx.5% increase of the overall inverter losses) COMPANY CONFIDENTIAL 15 COOLiR2™ - Electrical Performance • Inductance of wirebonds vs. wirebond-less interconnections The inductance of Cu plane is approx. 5 to 10 times lower than the inductance of one wirebond Paralleling multiple wirebonds doesn’t reduce the inductance proportionally due to mutual coupling effect. 480A CooliR2Bridge™ total inductance is approx. 12 nH and can be reduced further. 12 mm 20 mm Main inductance contributors: • • die leadframe 20 mil bondwire inductance is approx. 20 nH ea. 20 mm 0.3 mm die Copper plane inductance is approx. 2-4nH main DBC substrate layout Small overshoot, reduced ringing Effects of low stray inductance High overshoot, severe ringing Effects of high stray inductance COMPANY CONFIDENTIAL 16 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 17 COOLiR2™ - Thermal Performance Cooling Method Flexibility • • • Traditionally, only one side of the semiconductor die is used for heat removal. Increasing current and power density + smaller die area high heat flux density. Dual-sided cooling will become a necessity in modern high-power density inverters. Cooling method flexibility in the CooliR2™ packaging platform Bottom-side cooling Top-side cooling Dual-sided cooling Dual-side cooling Rth j-c reduced by up to 50% • • Thermal mass reduces the transient thermal resistance Zth. CooliR2™ modules can be attached to a baseplate or direct liquid cooled heatsink. COMPANY CONFIDENTIAL 18 COOLiR2™ - Thermal Performance Effect of standard base plate and direct liquid cooling Estimated Rth junction-heatsink for different configurations with single sided-cooling The best result achieved with direct-liquid-cooled heatsink • Approx. 10% to 15% lower Rth j-coolant • The durability of the direct-liquid-cooled heatsink is the main concern. COMPANY CONFIDENTIAL 19 COOLiR2™ - Thermal Performance Improving transient thermal performance The thermal mass of CooliR2DIE™ is larger than that of a conventional wirebonded die. CooliR2Bridge™ provides the option to utilize the mechanical clamp as a thermal mass COMPANY CONFIDENTIAL 20 COOLiR2™ - Thermal Performance Improving performance with dual-sided cooling capability Thermal resistance with dual-sided cooling For 𝑹𝑹𝑹 𝒋 − 𝒄 𝑩𝑩𝑩𝑩𝑩𝑩 = 𝑹𝑹𝑹 𝒋 − 𝒄 𝑻𝑻𝑻 𝑹𝑹𝑹 𝒋 − 𝒄 𝑫𝑫𝑫𝑫 − 𝑺𝑺𝑺𝑺𝑺 = 𝑹𝑹𝑹 𝒋 − 𝒄 𝑩𝑩𝑩𝑩𝑩𝑩 𝟐 The “sandwich” structure of the CooliR2DIE™ results in more uniform die surface temperature. It may not be possible to achieve the same thermal resistance on both sides. Assuming the thermal resistance of one side is 60% higher, the overall Rth j-coolant is still reduced by approx. 39%. = 𝑹𝑹𝑹 𝒋 − 𝒄 𝑫𝑫𝑫𝑫 − 𝑺𝑺𝑺𝑺𝑺 = 𝟏 𝟏 𝟏 + 𝑹𝑹𝑹 𝒋−𝒄 𝑩𝑩𝑩𝑩𝑩𝑩 𝟏.𝟔∗𝑹𝑹𝑹 𝒋−𝒄 𝑩𝑩𝑩𝑩𝑩𝑩 ≈ 𝟎. 𝟔𝟔 ∗ 𝑹𝑹𝑹 𝒋 − 𝒄 𝑩𝑩𝑩𝑩𝑩𝑩 = Rth j-coolant reduced by 39% The copper planes on both sides help the lateral heat spreading. The elimination of hot spots results in safer operation and increased current rating. 50% higher current rating. COMPANY CONFIDENTIAL 21 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 22 COOLiR2™ - Reliability Improving reliability by eliminating failure mechanisms Power Cycling results CooliR2Bridge™ modules power cycling test conditions: • constant current • 2 s on-time and 4 s off-time • delta Tj of 80oC • Tj max of 150oC Reached High reliability of CooliR2™ technology achieved by elimination of the primary failure mode – wirebonds failure 998,000 cycles CooliR2Bridge™ is expected to reach even higher number of cycles in the next trial. Additional reliability improvements of CooliR2™ technology: • increased maximum junction operating temperature (Tjmax=175oC) • more uniform die temperature distribution COMPANY CONFIDENTIAL 23 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 24 COOLiR2™ - High Power Density Power density improvements CooliR2™ technology power density improvement in comparison with conventional wirebonded and gel-filled power module technology Dual-sided cooling Tj MAX Module size Improvement Effect on Power Density Improvement Factor ~ 50% higher current density + 50% 1.5 from 150 oC to 175 oC + 20% 1.2 ~ 50% +100% 2.0 > + 300% 3.6 Total: Combined effect of dual-sided cooling + Tjmax. increase approx. 80% increase of power module current rating. COMPANY CONFIDENTIAL 25 Innovative CooliR2™ Packaging Platform AGENDA • HEV/EV power electronics challenges • CooliRIGBT™, CooliRDiode™- Application specific semiconductor devices • CooliR2™ - Paradigm shift in packaging technology • “Building block” approach • Electrical performance improvements • Thermal performance improvements • Increased reliability • High power density • Conclusions COMPANY CONFIDENTIAL 26 COOLiR2™ Packaging Platform for HEV/EV Inverters CONCLUSIONS CooliR2™ HEV/EV Power Modules Platform addresses all challenges posed by the demanding HEV/EV inverter applications ACHIEVEMENTS Challenges • Improved electrical performance • Improved thermal performance • Increased reliability Cost • Increased power density Reliability • Reduced size and weight • Lower system cost Size, volume Weight CooliR2™ platform has the potential to break-away from traditional single-side cooled wirebonded power modules and revolutionize the way automotive power converters are being build. COMPANY CONFIDENTIAL 27