LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTB114ELT1G S-LDTB114ELT1G • Applications Inverter, Interface, Driver • Features 3 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. 1 2 SOT-23 • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Limits Parameter Symbol Supply voltage VCC −50 Input voltage VIN −40 to +10 V 1 BASE R1 3 COLLECTOR R2 2 EMITTER Unit V Output current IC −500 mA Power dissipation PD Tj 200 mW Junction temperature 150 C Storage temperature Tstg −55 to +150 C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB114ELT1G S-LDTB114ELT1G LDTB114ELT3G S-LDTB114ELT3G F14 10 10 3000/Tape & Reel F14 10 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. VI(off) − − −0.5 VI(on) −3 − − VO(on) − −0.1 −0.3 V II − − −0.88 mA VI= −5V IO(off) − − −0.5 µA VCC= −50V, VI=0V DC current gain GI 56 − − − Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − − 200 − MHz VCE= −10V, IE=50mA, f=100MHz Parameter Input voltage Output voltage Input current Output current Transition frequency fT ∗ Unit V Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −10mA IO/II= −50mA/−2.5mA VO= −5V, IO= −50mA ∗ Characteristics of built-in transistor Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTB114ELT1G ;S-LDTB114ELT1G zElectrical characteristic curves -100 VO= −0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : V I (on) (V) -50 -20 -10 -5 Ta= −40 C 25 C 100 C -2 -1 -500m -10m -5m Ta= 100 C 25 C -2m −40 C -1m -500µ -200µ -100µ -50µ -20µ -10µ -5µ -200m -100m -500µ -1m -2m -2µ -1µ 0 -5m -10m -20m -50m-100m-200m -500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) -50m -20m -10m -5m -2 -2.5 -3 VO= −5V 500 DC CURRENT GAIN : GI (V) (on) OUTPUT VOLTAGE : VO -100m -1.5 Fig.2 Output current vs. input voltage (OFF characteristics) lO/lI=20 Ta=100 C 25 C −40 C -1 INPUT VOLTAGE : VI (off) (V) -500m -200m -0.5 1k -1 VCC= −5V 200 100 Ta=100 C 25 C −40 C 50 20 10 5 2 -2m -1m -500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 1 -500µ -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTB114ELT1G ;S-LDTB114ELT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3