LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC143TET1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SC-89 We declare that the material of product compliance with RoHS requirements. 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN 50 V IO 5 IC(Max.) 100 Output current R1 3 COLLECTOR 2 EMITTER mA Power dissipation PD 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC143TET1G H2 4.7 - 3000/Tape & Reel LDTC143TET3G H2 4.7 - 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA ICBO − − 0.5 µA VCB=50V VEB=4V Collector cutoff current Conditions IEBO − − 0.5 µA VCE(sat) − − 0.3 V IC/IB=5mA/0.25mA DC current transfer ratio hFE 100 250 600 − IC=1mA, VCE=5V Input resistance R1 3.29 4.7 6.11 kΩ Transition frequency fT ∗ − 250 − MHz Emitter cutoff current Collector-emitter saturation voltage − VCE=10V, IE=−5mA, f=100MHz ∗∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTC143TET1G zElectrical characteristic curves 1k VCE=5V DC CURRENT GAIN : hFE 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1 lC/lB=20 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTC143TET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3