LESHAN RADIO COMPANY, LTD. Digital transistors (built-in resistors) LDTD114ELT1 LDTD114ELT1 FFeatures 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3 1 2 3)Only the on/off conditions need to be set for operation, making device design easy. 4)Pb-Free package is available. SOT– 23 (TO–236AB) FDevice marking and ordering information Device Marking Shipping LDTD114ELT1 CA 3000/Tape&Reel LDTD114ELT1G(Pb-Free) CA 3000/Tape&Reel PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) FAbsolute maximum ratings (Ta = 25_C) Parameter Symbol Limits Unit Supply voltage Vcc 50 V Input voltage VIN -10~+40 V Output current IC 500 mA Power disspation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg -55~+150 O C C O FElectrical characteristics (Ta = 25C) LDTD114ELT1–1/3 LESHAN RADIO COMPANY, LTD. LDTD114ELT1 FElectrical characteristic curves LDTD114ELT1–2/3 LESHAN RADIO COMPANY, LTD. LDTD114ELT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LDTD114ELT1–3/3