LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846ADW1T1G LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT–363/SC–88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of product compliance with S-LBC846BDW1T1G RoHS requirements. S-LBC847BDW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC847CDW1T1G S-LBC848BDW1T1G 6 5 4 S-LBC848CDW1T1G 6 Q2 5 See Table Q1 4 1 1 2 3 2 3 MAXIMUM RATINGS SOT-363 /SC-88 Rating Symbol BC846 BC847 BC848 Unit Collector–Emitter Voltage V CEO 65 45 30 V Collector–Base Voltage V CBO 80 50 30 V Emitter–Base Voltage V 6.0 6.0 5.0 V 100 100 100 mAdc Collector Current -Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 380 250 mW mW 3.0 328 –55 to +150 mW/°C °C/W °C R θJA T J , T stg 1. FR–5 = 1.0 x 0.75 x 0.062 in. ORDERING INFORMATION Device LBC846ADW1T1G LBC846ADW1T3G S-LBC846ADW1T1G S-LBC846ADW1T3G LBC846BDW1T1G LBC846BDW1T3G LBC847BDW1T1G LBC847BDW1T3G LBC847CDW1T1G S-LBC846BDW1T1G S-LBC846BDW1T3G S-LBC847BDW1T1G S-LBC847BDW1T3G S-LBC847CDW1T1G LBC847CDW1T3G S-LBC847CDW1T3G LBC848BDW1T1G S-LBC848BDW1T1G LBC848BDW1T3G S-LBC848BDW1T3G LBC848CDW1T1G S-LBC848CDW1T1G LBC848CDW1T3G S-LBC848CDW1T3G Marking 1A 1A 1B 1B 1F 1F 1G 1G 1K 1K 1L 1L Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series S-LBC846ADW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 — — — — — — 80 50 30 — — — — — — 80 50 30 — — — — — — 6.0 6.0 5.0 — — — — — — — — — — 15 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA) LBC846 Series LBC847 Series LBC848 Series Collector–Emitter Breakdown Voltage (I C = 10 µA, V EB = 0) LBC846 Series LBC847 Series LBC848 Series Collector–Base Breakdown Voltage (I C = 10 µA) LBC846 Series LBC847 Series LBC848 Series Emitter–Base Breakdown Voltage (I E = 1.0 µA) LBC846 Series LBC847 Series LBC848 Series Collector Cutoff Current (V CB = 30 V) (V CB = 30 V, T A = 150°C) V V V V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO V nA µA ON CHARACTERISTICS DC Current Gain (I C = 2.0 mA, V CE = 5.0 V) h FE LBC846A — LBC846B, LBC847B, LBC848B 110 200 180 290 220 450 LBC847C, LBC848C 420 520 800 Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V BE(sat) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) V BE(on) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) — — — — 580 — — — 0.7 0.9 660 — 0.25 0.6 — — 700 770 V 100 — — MHz — — 4.5 pF dB — — — — 10 4.0 V mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) C obo Noise Figure (I C = 0.2 mA, NF V CE = 5.0 V dc, R S = 2.0 kΩ, LBC846A,LBC846B, LBC847B, LBC848B f = 1.0 kHz, BW = 200 Hz) LBC847C, LBC848C Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series S-LBC846ADW1T1G Series TYPICAL CHARACTERISTICS 1.0 0.9 1.5 0.8 1.0 0.7 V,VOLTAGE (VOLTS) h FE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 0.5 0.4 0.3 0.2 0.3 0.1 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 200 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages 2.0 1.6 1.2 0.8 0.4 0 0.02 0.2 0.3 Figure 1. Normalized DC Current Gain θ vb, TEMPERATURE COEFFICIENT (mV/ ° C) 0.2 V CE, COLLECTOR-EMITTER VOLTAGE(V) 0.6 0.1 1.0 10 20 1.0 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 100 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient Rev.O 3/6 LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series S-LBC846ADW1T1G Series 10 C,CAPACITANCE(pF) 7.0 5.0 3.0 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 400 300 200 100 80 60 40 30 20 0.5 0.7 1.0 3.0 5.0 7.0 10 20 30 50 0.8 2.0 1.0 0.5 0.6 0.4 0.2 0.2 0.1 0.2 1.0 10 0 0.2 100 0.5 2.0 1.6 1.2 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 1.0 2.0 5.0 10 20 50 100 200 100 200 I C , COLLECTOR CURRENT (mA) Figure 8. “On” Voltage 10 I B , BASE CURRENT (mA) Figure 9. Collector Saturation Region 20 θ VB , TEMPERATURE COEFFICIENT (mV/ ° C) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR-EMITTER VOLTAGE(VOLTS) 2.0 I C , COLLECTOR CURRENT (mAdc) Figure 6. Current–Gain – Bandwidth Product 1.0 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (NORMALIZED) V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances T f , CURREN-GAIN-BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient Rev.O 4/6 LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Ser S-LBC846ADW1T1G Ser 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Z θJA (t) = r(t) R θJA R θJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P (pk) t1 0.01 t2 DUTY CYCLE, D = t 1 /t 2 SINGLE PULSE 0.001 0 1.0 10 100 1.0K 10K 100K 1.0M t, TIME (ms) Figure 11. Thermal Response I C , COLLECTOR CURRENT (mA) -200 The safe operating area curves indicate I C –V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 12 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J (pk) may be calculated from the data in Figure 12. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 12. Active Region Safe Operating Area Rev.O 5/6 LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series S-LBC846ADW1T1G Series SC−88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* A3 C 6 6 XX M A1 L 1 XX OR M A 1 XX = Specific Device Code M = Date Code Rev.O 6/6