ONSEMI BC858CDW1T1

BC856BDW1T1,
BC857BDW1T1 Series,
BC858BDW1T1 Series
Preferred Devices
Dual General Purpose
Transistors
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PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
• Device Marking:
BC856BDW1T1 = 3B
BC857BDW1T1 = 3F
BC857CDW1T1 = 3G
BC858BDW1T1 = 3K
BC858CDW1T1 = 3L
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
DEVICE MARKING
6 5
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector −Emitter Voltage
VCEO
−65
−45
−30
V
Collector −Base Voltage
VCBO
−80
−50
−30
V
Emitter −Base Voltage
VEBO
−5.0
−5.0
−5.0
V
IC
−100
−100
−100
mAdc
Collector Current −
Continuous
1
2
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Symbol
Max
Unit
PD
380
250
mW
3.0
mW/°C
3xm
See Table
3
SOT−363/SC−88
CASE 419B
Style 1
3x = Specific Device Code
x = B, F, G, K, L
M = Date Code
THERMAL CHARACTERISTICS
Characteristic
4
ORDERING INFORMATION
Thermal Resistance,
Junction to Ambient
RJA
328
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in
Package
Shipping†
BC856BDW1T1
SOT−363
3000 Units/Reel
BC857BDW1T1
SOT−363
3000 Units/Reel
BC857CDW1T1
SOT−363
3000 Units/Reel
BC858BDW1T1
SOT−363
3000 Units/Reel
BC858CDW1T1
SOT−363
3000 Units/Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
1
Publication Order Number:
BC856BDW1T1/D
BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
−65
−45
−30
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−15
−4.0
BC856B, BC857B, BC858B
BC857C, BC858C
−
−
150
270
−
−
BC856B, BC857B, BC858B
BC857C, BC858C
220
420
290
520
475
800
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
−
−
4.5
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(IC = −10 A, VEB = 0)
Collector −Base Breakdown Voltage
(IC = −10 A)
Emitter −Base Breakdown Voltage
(IE = −1.0 A)
V(BR)CEO
BC856 Series
BC857 Series
BC858 Series
V
V(BR)CES
BC856 Series
BC857B Only
BC858 Series
V
V(BR)CBO
BC856 Series
BC857 Series
BC858 Series
V
V(BR)EBO
BC856 Series
BC857 Series
BC858 Series
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ICBO
V
nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = −10 A, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
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2
BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series
TYPICAL CHARACTERISTICS − BC856
TJ = 25°C
VCE = −5.0 V
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
−1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
−0.6
VBE @ VCE = −5.0 V
−0.4
−0.2
0.2
VCE(sat) @ IC/IB = 10
0
−0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
−2.0
−1.6
−1.2
IC =
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0
−10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
−20
−1.0
−1.4
−1.8
−2.6
−3.0
−0.2
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
−0.1 −0.2
−0.5
−1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
−0.5 −1.0
−50
−2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mA)
−100 −200
Figure 4. Base−Emitter Temperature Coefficient
40
6.0
−55°C to 125°C
−2.2
Figure 3. Collector Saturation Region
20
VB for VBE
500
VCE = −5.0 V
200
100
50
20
−100
−1.0
−10
IC, COLLECTOR CURRENT (mA)
−50 −100
Figure 5. Capacitance
Figure 6. Current−Gain − Bandwidth Product
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3
BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series
TYPICAL CHARACTERISTICS − BC857/BC858
−1.0
1.5
TA = 25°C
−0.9
VCE = −10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
0.3
VCE(sat) @ IC/IB = 10
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
IC, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
−100 −200
1.0
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
IC = −50 mA
IC = −200 mA
IC = −100 mA
IC = −20 mA
−0.4
0
−0.02
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−10 −20
−0.1
−1.0
IB, BASE CURRENT (mA)
−0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−10
−1.0
IC, COLLECTOR CURRENT (mA)
−100
Figure 10. Base−Emitter Temperature
Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 9. Collector Saturation Region
C, CAPACITANCE (pF)
−100
−50
Figure 8. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−20 −30 −40
400
300
200
150
VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current−Gain − Bandwidth Product
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4
BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZJA(t) = r(t) RJA
RJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
10
1.0
100
1.0k
10k
100k
1.0M
t, TIME (ms)
Figure 13. Thermal Response
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.
TJ(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
−200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
−100
−50
−10
−5.0
−2.0
−1.0
TA = 25°C
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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5
BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
D 6 PL
0.2 (0.008)
M
B
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
M
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
SC−88/SC70−6
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC856BDW1T1/D