Bias Resistor Transistor LDTB113ELT1G S

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
LDTB113ELT1G
S-LDTB113ELT1G
Applications
Inverter, Interface, Driver
•
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Supply voltage
VCC
−50
V
Input voltage
VIN
−10 to +10
V
Output current
IC
−500
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
Parameter
3
1
2
SOT–23
1
BASE
R1
3
COLLECTOR
R2
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTB113ELT1G
S-LDTB113ELT1G
LDTB113ELT3G
S-LDTB113ELT3G
K4
1
1
3000/Tape & Reel
K4
1
1
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VI(off)
−
−
−0.5
V
VCC= −5V, IO= −100µA
VI(on)
−3
−
−
V
VO= −0.3V, IO= −20mA
VO(on)
−
−0.1
−0.3
V
II
−
−
−7.2
mA
IO(off)
−
−
−0.5
µA
GI
33
−
−
−
Input resistance
R1
0.7
1
1.3
kΩ
−
Resistance ratio
R2/R1
0.8
1
1.2
−
−
−
200
−
MHz
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
fT ∗
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI= 0V
VO= −5V, IO= −50mA
VCE= −10V, IE= 50mA, f= 100MHz
∗ Characteristics of built-in transistor
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTB113ELT1G ;S-LDTB113ELT1G
zElectrical characteristic curves
-100
-10m
-5m
VO= −0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : V I(on) (V)
-50
-20
-1m
-500µ
-10
-5
-2
-2m
Ta=−40 C
25 C
100 C
VCC= −5V
Ta=100 C
25 C
−40 C
-200µ
-100µ
-50µ
-1
-500m
-20µ
-10µ
-5µ
-200m
-100m
-500µ -1m -2m
-2µ
-1µ
0
-5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO ( A)
-1
VO= −5V
50
(V)
(on)
Ta=100 C
25 C
−40 C
20
10
5
2
OUTPUT VOLTAGE : VO
DC CURRENT GAIN : GI
100
-1.5
-2.0
(off)
-2.5
-3.0
( V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
500
200
-1.0
INPUT VOLTAGE : VI
Fig.1 Input voltage vs. output current
(ON characteristics)
1k
-0.5
lO/lI=20
-500m
Ta=100 C
25 C
−40 C
-200m
-100m
-50m
-20m
-10m
-5m
-2m
1
-500µ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
-1m
-500µ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTB113ELT1G ;S-LDTB113ELT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3